页 753 - 二极管 - 整流器 - 单 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
CLLRH-07 BK	Central Semiconductor Corp	DIODE GP 700V 500MA SOD80 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 700V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.1V @ 500mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200nA @ 700V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: SOD-80 Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-213AC, MINI-MELF, SOD-80	库存7,728	700V	500mA	1.1V @ 500mA	Standard Recovery >500ns, > 200mA (Io)	-	200nA @ 700V	10pF @ 4V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	SOD-80	-65°C ~ 175°C
RLR4004TE-21	Rohm Semiconductor	DIODE GEN PURP 400V 800MA LLDS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1V @ 800mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: LLDS Operating Temperature - Junction: 150°C (Max)	封装: DO-213AC, MINI-MELF, SOD-80	库存57,600	400V	800mA	1V @ 800mA	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 400V	-	Surface Mount	DO-213AC, MINI-MELF, SOD-80	LLDS	150°C (Max)
SD500N45PSC	Vishay Semiconductor Diodes Division	DIODE GEN PURP 4.5KV 475A B8 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 4500V Current - Average Rectified (Io): 475A Voltage - Forward (Vf) (Max) @ If: 1.66V @ 1000A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50mA @ 4500V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: B-8 Supplier Device Package: B-8 Operating Temperature - Junction: -40°C ~ 150°C	封装: B-8	库存4,544	4500V	475A	1.66V @ 1000A	Standard Recovery >500ns, > 200mA (Io)	-	50mA @ 4500V	-	Chassis, Stud Mount	B-8	B-8	-40°C ~ 150°C
RS1BB-13	Diodes Incorporated	DIODE GEN PURP 100V 1A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-214AA, SMB	库存4,608	100V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	15pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 150°C
FR85D05	GeneSiC Semiconductor	DIODE GEN PURP 200V 85A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 85A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 85A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 25µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -40°C ~ 125°C	封装: DO-203AB, DO-5, Stud	库存2,016	200V	85A	1.4V @ 85A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	25µA @ 100V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-40°C ~ 125°C
S40VR	GeneSiC Semiconductor	DIODE GEN PURP REV 1.4KV 40A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 1400V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 40A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 160°C	封装: DO-203AB, DO-5, Stud	库存2,512	1400V	40A	1.1V @ 40A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 160°C
UGF15HT-E3/45	Vishay Semiconductor Diodes Division	DIODE GEN PURP 500V 15A ITO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.75V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 30µA @ 500V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-220-2 Full Pack, Isolated Tab	库存4,320	500V	15A	1.75V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	30µA @ 500V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	ITO-220AC	-55°C ~ 150°C
MBR5200VPBTR-E1	Diodes Incorporated	DIODE SCHOTTKY 200V 5A DO27 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 950mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: DO-27 Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-201AA, DO-27, Axial	库存3,168	200V	5A	950mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 200V	-	Through Hole	DO-201AA, DO-27, Axial	DO-27	-65°C ~ 150°C
BYM12-400HE3/96	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO213AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 14pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-213AB, MELF (Glass)	库存7,408	400V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	14pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
BYM07-400-E3/83	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 500MA DO213 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.35V @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 7pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA (Glass) Supplier Device Package: DO-213AA (GL34) Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-213AA (Glass)	库存5,712	400V	500mA	1.35V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	7pF @ 4V, 1MHz	Surface Mount	DO-213AA (Glass)	DO-213AA (GL34)	-65°C ~ 175°C
SR004HR0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 0.5A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 550mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: 110pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 125°C	封装: DO-204AL, DO-41, Axial	库存4,304	40V	500mA	550mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	110pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 125°C
SS115LHMHG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 150V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-219AB	库存4,384	150V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 150V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
BAS20-HE3-18	Vishay Semiconductor Diodes Division	DIODE GEN PURP 150V 200MA SOT23 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 150V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-236-3, SC-59, SOT-23-3	库存2,832	150V	200mA	1.25V @ 200mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 150V	5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	-55°C ~ 150°C
SS23-E3/52T	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 2A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 125°C	封装: DO-214AA, SMB	库存306,960	30V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 30V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-65°C ~ 125°C
DB2440300L	Panasonic Electronic Components	DIODE SCHOTTKY 40V 3A TMINIP2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A (DC) Voltage - Forward (Vf) (Max) @ If: 540mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 15ns Current - Reverse Leakage @ Vr: 250µA @ 40V Capacitance @ Vr, F: 50pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: TMiniP2-F2-B Operating Temperature - Junction: 150°C (Max)	封装: SOD-128	库存3,312	40V	3A (DC)	540mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	15ns	250µA @ 40V	50pF @ 10V, 1MHz	Surface Mount	SOD-128	TMiniP2-F2-B	150°C (Max)
BYV10-600PQ	WeEn Semiconductors	DIODE GEN PURP 600V 10A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 2V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max)	封装: TO-220-2	库存49,230	600V	10A	2V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	175°C (Max)
1N5817-B	Diodes Incorporated	DIODE SCHOTTKY 20V 1A DO41 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 750mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 20V Capacitance @ Vr, F: 110pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 125°C	封装: DO-204AL, DO-41, Axial	库存15,552	20V	1A	750mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 20V	110pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 125°C
MBRM130LT1G	ON Semiconductor	DIODE SCHOTTKY 30V 1A POWERMITE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 380mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 410µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-216AA Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 125°C	封装: DO-216AA	库存1,791,492	30V	1A	380mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	410µA @ 30V	-	Surface Mount	DO-216AA	Powermite	-55°C ~ 125°C
UJ3D1250K	Qorvo	DIODE SIL CARB 1.2KV 50A TO247-3 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 400 µA @ 1200 V Capacitance @ Vr, F: 2340pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C	封装: -	库存20,364	1200 V	50A	1.7 V @ 50 A	No Recovery Time > 500mA (Io)	0 ns	400 µA @ 1200 V	2340pF @ 1V, 1MHz	Through Hole	TO-247-3	TO-247-3	-55°C ~ 175°C
1N6663US-TR	Microchip Technology	DIODE GEN PURP 600V 500MA D-5A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 nA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	600 V	500mA	1 V @ 400 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	50 nA @ 600 V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
JANTX1N6874UTK2CS	Microchip Technology	DIODE GEN PURP 400MA THINKEY2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 400mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: ThinKey™2 Supplier Device Package: ThinKey™2 Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	-	400mA	1 V @ 400 mA	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Surface Mount	ThinKey™2	ThinKey™2	-65°C ~ 175°C
S5GH	Taiwan Semiconductor Corporation	5A, 400V, STANDARD RECOVERY RECT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存17,850	400 V	5A	1.15 V @ 5 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	10 µA @ 400 V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SICRF6650	SMC Diode Solutions	DIODE SIL CARB 650V 6A ITO220AC Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 50 µA @ 650 V Capacitance @ Vr, F: 150pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 175°C	封装: -	库存645	650 V	6A	1.8 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	150pF @ 5V, 1MHz	Through Hole	TO-220-2 Full Pack, Isolated Tab	ITO-220AC	-55°C ~ 175°C
JAN1N5712UR-1	Microchip Technology	DIODE SCHOTTKY 16V 75MA DO213AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 16 V Current - Average Rectified (Io): 75mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 35 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150 nA @ 16 V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	16 V	75mA	1 V @ 35 mA	Small Signal =< 200mA (Io), Any Speed	-	150 nA @ 16 V	2pF @ 0V, 1MHz	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 150°C
MBR870-BP	Micro Commercial Co	Interface Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 70 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150 µA @ 70 V Capacitance @ Vr, F: 280pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	70 V	8A	850 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	150 µA @ 70 V	280pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SE20NJHM3-I	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 600V 2A DFN3820A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.2 µs Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount, Wettable Flank Package / Case: 2-VDFN Supplier Device Package: DFN3820A Operating Temperature - Junction: -55°C ~ 175°C	封装: -	库存34,110	600 V	2A	1.1 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	1.2 µs	5 µA @ 600 V	12pF @ 4V, 1MHz	Surface Mount, Wettable Flank	2-VDFN	DFN3820A	-55°C ~ 175°C
SNRVBA130LNT3G	onsemi	DIODE SCHOTTKY 1A 30V SMA Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
JANTXV1N6624US-TR	Microchip Technology	DIODE GEN PURP 900V 1A D-5A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 900 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Current - Reverse Leakage @ Vr: 500 nA @ 150 V Capacitance @ Vr, F: 10pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	900 V	1A	1.55 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	500 nA @ 150 V	10pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 150°C
VS-3EJU06HM3-6B	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 600V 3A DO221AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 3 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: DO-221AC (SlimSMA) Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	600 V	3A	1.35 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	3 µA @ 600 V	-	Surface Mount	DO-221AC, SMA Flat Leads	DO-221AC (SlimSMA)	-55°C ~ 175°C
ES3C-V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 150 V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	150 V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 150 V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C

CLLRH-07 BK

Central Semiconductor Corp

DIODE GP 700V 500MA SOD80

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 700V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 500mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200nA @ 700V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-213AC, MINI-MELF, SOD-80

库存7,728

700V

500mA

1.1V @ 500mA

Standard Recovery >500ns, > 200mA (Io)

-

200nA @ 700V

10pF @ 4V, 1MHz

Surface Mount

DO-213AC, MINI-MELF, SOD-80

SOD-80

-65°C ~ 175°C

RLR4004TE-21

Rohm Semiconductor

DIODE GEN PURP 400V 800MA LLDS

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 800mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: LLDS
Operating Temperature - Junction: 150°C (Max)

封装: DO-213AC, MINI-MELF, SOD-80

库存57,600

400V

800mA

1V @ 800mA

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 400V

-

Surface Mount

DO-213AC, MINI-MELF, SOD-80

LLDS

150°C (Max)

SD500N45PSC

Vishay Semiconductor Diodes Division

DIODE GEN PURP 4.5KV 475A B8

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 4500V
Current - Average Rectified (Io): 475A
Voltage - Forward (Vf) (Max) @ If: 1.66V @ 1000A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50mA @ 4500V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: B-8
Supplier Device Package: B-8
Operating Temperature - Junction: -40°C ~ 150°C

封装: B-8

库存4,544

4500V

475A

1.66V @ 1000A

Standard Recovery >500ns, > 200mA (Io)

-

50mA @ 4500V

-

Chassis, Stud Mount

B-8

-40°C ~ 150°C

RS1BB-13

Diodes Incorporated

DIODE GEN PURP 100V 1A SMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-214AA, SMB

库存4,608

100V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 100V

15pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

SMB

-65°C ~ 150°C

FR85D05

GeneSiC Semiconductor

DIODE GEN PURP 200V 85A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 85A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 85A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 25µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C

封装: DO-203AB, DO-5, Stud

库存2,016

200V

85A

1.4V @ 85A

Fast Recovery =< 500ns, > 200mA (Io)

500ns

25µA @ 100V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-40°C ~ 125°C

S40VR

GeneSiC Semiconductor

DIODE GEN PURP REV 1.4KV 40A DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 1400V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 40A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 160°C

封装: DO-203AB, DO-5, Stud

库存2,512

1400V

40A

1.1V @ 40A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 100V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 160°C

UGF15HT-E3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 500V 15A ITO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 500V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 30µA @ 500V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-220-2 Full Pack, Isolated Tab

库存4,320

500V

15A

1.75V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

30µA @ 500V

-

Through Hole

TO-220-2 Full Pack, Isolated Tab

ITO-220AC

-55°C ~ 150°C

MBR5200VPBTR-E1

Diodes Incorporated

DIODE SCHOTTKY 200V 5A DO27

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-201AA, DO-27, Axial

库存3,168

200V

5A

950mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 200V

-

Through Hole

DO-201AA, DO-27, Axial

DO-27

-65°C ~ 150°C

BYM12-400HE3/96

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO213AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-213AB, MELF (Glass)

库存7,408

400V

1A

1.25V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 400V

14pF @ 4V, 1MHz

Surface Mount

DO-213AB, MELF (Glass)

DO-213AB

-65°C ~ 175°C

BYM07-400-E3/83

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 500MA DO213

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-213AA (Glass)

库存5,712

400V

500mA

1.35V @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 400V

7pF @ 4V, 1MHz

Surface Mount

DO-213AA (Glass)

DO-213AA (GL34)

-65°C ~ 175°C

SR004HR0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 0.5A,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 550mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 125°C

封装: DO-204AL, DO-41, Axial

库存4,304

40V

500mA

550mV @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

110pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 125°C

SS115LHMHG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-219AB

库存4,384

150V

1A

900mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

50µA @ 150V

-

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

BAS20-HE3-18

Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 200MA SOT23

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 150V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-236-3, SC-59, SOT-23-3

库存2,832

150V

200mA

1.25V @ 200mA

Small Signal =< 200mA (Io), Any Speed

50ns

100nA @ 150V

5pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

-55°C ~ 150°C

SS23-E3/52T

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 2A DO214AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 125°C

封装: DO-214AA, SMB

库存306,960

30V

2A

500mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

400µA @ 30V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-65°C ~ 125°C

DB2440300L

Panasonic Electronic Components

DIODE SCHOTTKY 40V 3A TMINIP2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 3A (DC)
Voltage - Forward (Vf) (Max) @ If: 540mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15ns
Current - Reverse Leakage @ Vr: 250µA @ 40V
Capacitance @ Vr, F: 50pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: TMiniP2-F2-B
Operating Temperature - Junction: 150°C (Max)

封装: SOD-128

库存3,312

40V

3A (DC)

540mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

15ns

250µA @ 40V

50pF @ 10V, 1MHz

Surface Mount

SOD-128

TMiniP2-F2-B

150°C (Max)

BYV10-600PQ

WeEn Semiconductors

DIODE GEN PURP 600V 10A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 2V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)

封装: TO-220-2

库存49,230

600V

10A

2V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

10µA @ 600V

-

Through Hole

TO-220-2

TO-220AC

175°C (Max)

1N5817-B

Diodes Incorporated

DIODE SCHOTTKY 20V 1A DO41

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 20V
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 125°C

封装: DO-204AL, DO-41, Axial

库存15,552

20V

1A

750mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 20V

110pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 125°C

MBRM130LT1G

ON Semiconductor

DIODE SCHOTTKY 30V 1A POWERMITE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 380mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 410µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-216AA
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C

封装: DO-216AA

库存1,791,492

30V

1A

380mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

410µA @ 30V

-

Surface Mount

DO-216AA

Powermite

-55°C ~ 125°C

UJ3D1250K

Qorvo

DIODE SIL CARB 1.2KV 50A TO247-3

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 50A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
Capacitance @ Vr, F: 2340pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

库存20,364

1200 V

50A

1.7 V @ 50 A

No Recovery Time > 500mA (Io)

0 ns

400 µA @ 1200 V

2340pF @ 1V, 1MHz

Through Hole

TO-247-3

-55°C ~ 175°C

1N6663US-TR

Microchip Technology

DIODE GEN PURP 600V 500MA D-5A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 nA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

600 V

500mA

1 V @ 400 mA

Fast Recovery =< 500ns, > 200mA (Io)

-

50 nA @ 600 V

-

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 175°C

JANTX1N6874UTK2CS

Microchip Technology

DIODE GEN PURP 400MA THINKEY2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 400mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: ThinKey™2
Supplier Device Package: ThinKey™2
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

-

400mA

1 V @ 400 mA

Standard Recovery >500ns, > 200mA (Io)

-

Surface Mount

ThinKey™2

-65°C ~ 175°C

S5GH

Taiwan Semiconductor Corporation

5A, 400V, STANDARD RECOVERY RECT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存17,850

400 V

5A

1.15 V @ 5 A

Standard Recovery >500ns, > 200mA (Io)

1.5 µs

10 µA @ 400 V

60pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

SICRF6650

SMC Diode Solutions

DIODE SIL CARB 650V 6A ITO220AC

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Capacitance @ Vr, F: 150pF @ 5V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

库存645

650 V

6A

1.8 V @ 6 A

No Recovery Time > 500mA (Io)

0 ns

50 µA @ 650 V

150pF @ 5V, 1MHz

Through Hole

TO-220-2 Full Pack, Isolated Tab

ITO-220AC

-55°C ~ 175°C

JAN1N5712UR-1

Microchip Technology

DIODE SCHOTTKY 16V 75MA DO213AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 16 V
Current - Average Rectified (Io): 75mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 35 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150 nA @ 16 V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

Request a Quote

16 V

75mA

1 V @ 35 mA

Small Signal =< 200mA (Io), Any Speed

-

150 nA @ 16 V

2pF @ 0V, 1MHz

Surface Mount

DO-213AA

-65°C ~ 150°C

MBR870-BP

Micro Commercial Co

Interface

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 70 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150 µA @ 70 V
Capacitance @ Vr, F: 280pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

70 V

8A

850 mV @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

-

150 µA @ 70 V

280pF @ 4V, 1MHz

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

SE20NJHM3-I

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 2A DFN3820A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-VDFN
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

库存34,110

600 V

2A

1.1 V @ 2 A

Standard Recovery >500ns, > 200mA (Io)

1.2 µs

5 µA @ 600 V

12pF @ 4V, 1MHz

Surface Mount, Wettable Flank

2-VDFN

DFN3820A

-55°C ~ 175°C

SNRVBA130LNT3G

onsemi

DIODE SCHOTTKY 1A 30V SMA

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

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-

JANTXV1N6624US-TR

Microchip Technology

DIODE GEN PURP 900V 1A D-5A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 900 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Current - Reverse Leakage @ Vr: 500 nA @ 150 V
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

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900 V

1A

1.55 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

60 ns

500 nA @ 150 V

10pF @ 10V, 1MHz

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 150°C

VS-3EJU06HM3-6B

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 3A DO221AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

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600 V

3A

1.35 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

3 µA @ 600 V

-

Surface Mount

DO-221AC, SMA Flat Leads

DO-221AC (SlimSMA)

-55°C ~ 175°C

ES3C-V6G

Taiwan Semiconductor Corporation

DIODE GEN PURP 150V 3A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

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150 V

3A

-

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

10 µA @ 150 V

45pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C