图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 200V 3A L-FLAT
|
封装: L-FLAT? |
库存6,736 |
|
200V | 3A (DC) | 0.98V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Surface Mount | L-FLAT? | L-FLAT? (4x5.5) | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 16A ITO220AC
|
封装: TO-220-2 Full Pack, Isolated Tab |
库存2,704 |
|
60V | 16A | 730mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -65°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A DO204AL
|
封装: DO-204AL, DO-41, Axial |
库存2,384 |
|
100V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 2µA @ 100V | 25pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
||
NXP |
DIODE SCHOTTKY 30V 200MA SOD2
|
封装: SOD-110 |
库存7,808 |
|
30V | 200mA (DC) | 800mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 2µA @ 25V | 10pF @ 1V, 1MHz | Surface Mount | SOD-110 | SOD110 | 125°C (Max) |
||
Semtech Corporation |
DIODE GEN PURP 150V 30A MODULE
|
封装: Module |
库存5,120 |
|
150V | 30A | 1.1V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 20µA @ 150V | - | Solder | Module | - | -55°C ~ 150°C |
||
Semtech Corporation |
DIODE GEN PURP 400V 15A
|
封装: - |
库存2,080 |
|
400V | 15A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 400V | - | - | - | - | -55°C ~ 175°C |
||
GeneSiC Semiconductor |
DIODE SCHOTTKY 8KV 50MA AXIAL
|
封装: Axial |
库存2,224 |
|
8000V | 50mA (DC) | 4.6V @ 50mA | No Recovery Time > 500mA (Io) | 0ns | 3.8µA @ 8000V | 25pF @ 1V, 1MHz | Through Hole | Axial | - | -55°C ~ 175°C |
||
Semtech Corporation |
DIODE GEN PURP 5KV 500MA AXIAL
|
封装: Axial |
库存2,000 |
|
5000V | 500mA | 5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 5µs | 1µA @ 5000V | - | Through Hole | Axial | - | -55°C ~ 150°C |
||
TSC America Inc. |
DIODE, SUPER FAST, 20A, 500V, 35
|
封装: TO-220-3 |
库存2,416 |
|
500V | 20A | 1.7V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 500V | 80pF @ 4V, 1MHz | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 1.7A TO277A
|
封装: TO-277, 3-PowerDFN |
库存5,264 |
|
600V | 1.7A (DC) | 1.9V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | 72pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
||
Sanken |
DIODE GEN PURP 800V 1A AXIAL
|
封装: Axial |
库存5,680 |
|
800V | 1A | 1.05V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 20µA @ 800V | - | Through Hole | Axial | - | -40°C ~ 150°C |
||
Nexperia USA Inc. |
DIODE SCHOTTKY 40V 1A SOD323
|
封装: SC-76, SOD-323 |
库存7,760 |
|
40V | 1A (DC) | 640mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | 50pF @ 1V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | 150°C (Max) |
||
Vishay Semiconductor Diodes Division |
DIODE GPP 600V 3.0A DO-214AB
|
封装: DO-214AB, SMC |
库存3,504 |
|
600V | 2A | 1.15V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2.8µs | 5µA @ 600V | 26pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 600V 3A AXIAL
|
封装: B, Axial |
库存4,928 |
|
600V | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 600V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
||
Global Power Technologies Group |
DIODE SCHOTTKY 600V 3A TO220-2
|
封装: TO-220-2 |
库存15,618 |
|
600V | 3A (DC) | 1.65V @ 3A | No Recovery Time > 500mA (Io) | 0ns | 10µA @ 600V | 158pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
||
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 2A DO204AC
|
封装: DO-204AC, DO-15, Axial |
库存120,000 |
|
100V | 2A | 790mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 100V | - | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 175°C |
||
Diodes Incorporated |
DIODE GEN PURP 1KV 1A MELF
|
封装: DO-213AB, MELF |
库存13,692 |
|
1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1000V | 15pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF | MELF | -55°C ~ 150°C |
||
Panjit International Inc. |
DIODE SCHOTTKY 120V 15A TO277B
|
封装: - |
库存14,955 |
|
120 V | 15A | 790 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 35 µA @ 120 V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277B | -55°C ~ 150°C |
||
Diotec Semiconductor |
DIODE GEN PURP 200V 1A DO213AA
|
封装: - |
库存7,410 |
|
200 V | 1A | 1.2 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 5 µA @ 200 V | - | Surface Mount | DO-213AA | DO-213AA, MINI-MELF | -50°C ~ 175°C |
||
Microchip Technology |
DIODE GEN PURP 400V 12A TO254
|
封装: - |
Request a Quote |
|
400 V | 12A | 1.55 V @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 10 µA @ 320 V | 300pF @ 5V, 1MHz | Through Hole | TO-254-3, TO-254AA | TO-254 | - |
||
Rohm Semiconductor |
DIODE SCHOTTKY 30V 1A PMDTM
|
封装: - |
库存8,595 |
|
30 V | 1A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 30 V | - | Surface Mount | SOD-128 | PMDTM | 150°C (Max) |
||
Micro Commercial Co |
Interface
|
封装: - |
Request a Quote |
|
100 V | 3A | 780 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | Surface Mount | DO-214AB, SMC | SMC (DO-214AB) | -55°C ~ 175°C |
||
Taiwan Semiconductor Corporation |
20A, 45V, SCHOTTKY RECTIFIER
|
封装: - |
Request a Quote |
|
45 V | 20A | 550 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 45 V | - | Through Hole | R-6, Axial | R-6 | -55°C ~ 200°C |
||
Formosa Microsemi Co., Ltd. |
DIODE SCHOTTKY 60V 2A SOD123HT
|
封装: - |
Request a Quote |
|
60 V | 2A | 700 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 60 V | 80pF @ 4V, 1MHz | Surface Mount | SOD-123T | SOD-123HT | -55°C ~ 150°C |
||
Microchip Technology |
RECTIFIER
|
封装: - |
Request a Quote |
|
400 V | 70A | 1.25 V @ 200 A | Standard Recovery >500ns, > 200mA (Io) | - | 25 µA @ 400 V | - | Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -65°C ~ 200°C |
||
onsemi |
SS SOT23 GP XSTR SPCL TR
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Microchip Technology |
DIODE GEN PURP 500V 1A A AXIAL
|
封装: - |
Request a Quote |
|
500 V | 1A | 1.1 V @ 500 mA | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 3 µA @ 500 V | 50pF @ 0V, 1MHz | Through Hole | A, Axial | A, Axial | -65°C ~ 175°C |
||
Diodes Incorporated |
DIODE GEN PURP 80V 125MA SOD523
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Diodes Incorporated |
DIODE GEN PURP 100V 1A DO41
|
封装: - |
Request a Quote |
|
100 V | 1A | 1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 100 V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -55°C ~ 125°C |
||
Toshiba Semiconductor and Storage |
DIODE GEN PURP 400V 1A M-FLAT
|
封装: - |
Request a Quote |
|
400 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 10 µA @ 400 V | - | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |