页 453 - 二极管 - 整流器 - 单 | 分立半导体产品 | 深圳黑森尔电子
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二极管 - 整流器 - 单

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描述
封装
库存
数量
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
VS-8EWS12STRRPBF
Vishay Semiconductor Diodes Division

DIODE RECTIFIER 1200V 8A DPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存7,344
1200V
8A
1.1V @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
50µA @ 1200V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
-55°C ~ 150°C
hot SSB44HE3/52T
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 4A DO214AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 490mV @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400µA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: DO-214AA, SMB
库存18,000
40V
4A
490mV @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 40V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-65°C ~ 150°C
MBR1035-E3/45
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 10A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 35V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 840mV @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 35V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: TO-220-2
库存4,560
35V
10A
840mV @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 35V
-
Through Hole
TO-220-2
TO-220AC
-65°C ~ 150°C
SS29HE3/5BT
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 90V 1.5A DO214AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 90V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30µA @ 90V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: DO-214AA, SMB
库存3,920
90V
1.5A
750mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
30µA @ 90V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
FR40D05
GeneSiC Semiconductor

DIODE GEN PURP 200V 40A DO5

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 40A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500ns
  • Current - Reverse Leakage @ Vr: 25µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -40°C ~ 125°C
封装: DO-203AB, DO-5, Stud
库存5,088
200V
40A
1V @ 40A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
25µA @ 100V
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-5
-40°C ~ 125°C
VS-20ETF12STRL-M3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 20A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.31V @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 400ns
  • Current - Reverse Leakage @ Vr: 100µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2Pak)
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存5,056
1200V
20A
1.31V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
400ns
100µA @ 1200V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
-40°C ~ 150°C
FESB16BTHE3/45
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 16A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 975mV @ 16A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Capacitance @ Vr, F: 175pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存2,960
100V
16A
975mV @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 100V
175pF @ 4V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-65°C ~ 150°C
VS-ETL1506-1HM3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 15A TO262AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.07V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 210ns
  • Current - Reverse Leakage @ Vr: 15µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Supplier Device Package: TO-262
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: TO-262-3 Long Leads, I2Pak, TO-262AA
库存2,800
600V
15A
1.07V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
210ns
15µA @ 600V
-
Through Hole
TO-262-3 Long Leads, I2Pak, TO-262AA
TO-262
-65°C ~ 175°C
RM 1CV
Sanken

DIODE GEN PURP 1KV 800MA AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 800mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: Axial
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: Axial
库存3,104
1000V
800mA
1.2V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 800V
-
Through Hole
Axial
Axial
-40°C ~ 150°C
SBR8M100P5Q-13D
Diodes Incorporated

DIODE SBR 100V 8A POWERDI5

  • Diode Type: Super Barrier
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 880mV @ 8A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: PowerDI? 5
  • Supplier Device Package: PowerDI?5
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: PowerDI? 5
库存3,328
100V
8A
880mV @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
2µA @ 100V
-
Surface Mount
PowerDI? 5
PowerDI?5
-55°C ~ 175°C
SSA24HE3_A/H
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 2A DO214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 490mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: DO-214AC, SMA
库存7,072
30V
2A
490mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 30V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-65°C ~ 150°C
hot DFLF1800-7
Diodes Incorporated

DIODE GEN 800V 1A POWERDI123

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500ns
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: POWERDI?123
  • Supplier Device Package: PowerDI? 123
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: POWERDI?123
库存352,200
800V
1A
1.35V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
10µA @ 800V
-
Surface Mount
POWERDI?123
PowerDI? 123
-65°C ~ 150°C
SS36L MHG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 6

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: DO-219AB
库存3,232
60V
3A
750mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
SF17GHR1G
TSC America Inc.

DIODE, SUPER FAST, 1A, 500V, 35N

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 500V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 500V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: DO-204AL, DO-41, Axial
库存2,624
500V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 500V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
RB520S30YL
Nexperia USA Inc.

DIODE SCHOTTKY 30V 200MA SOD523

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1µA @ 10V
  • Capacitance @ Vr, F: 20pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: SC-79
  • Operating Temperature - Junction: 150°C (Max)
封装: SC-79, SOD-523
库存6,656
30V
200mA
600mV @ 200mA
Fast Recovery =< 500ns, > 200mA (Io)
-
1µA @ 10V
20pF @ 1V, 1MHz
Surface Mount
SC-79, SOD-523
SC-79
150°C (Max)
DSEI8-06AS-TUBE
IXYS

DIODE GEN PURP 600V 8A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 20µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存5,232
600V
8A
1.5V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
20µA @ 600V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-40°C ~ 150°C
hot S07M-M-08
Vishay Semiconductor Diodes Division

DIODE STD REC 1000V DO219AB-M

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 700mA
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.8µs
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Capacitance @ Vr, F: 4pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: DO-219AB (SMF)
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: DO-219AB
库存482,208
1000V
700mA
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
10µA @ 1000V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
DO-219AB (SMF)
-55°C ~ 150°C
hot STTH6010W
STMicroelectronics

DIODE GEN PURP 1KV 60A DO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 2V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 115ns
  • Current - Reverse Leakage @ Vr: 20µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-247-2 (Straight Leads)
  • Supplier Device Package: DO-247
  • Operating Temperature - Junction: 175°C (Max)
封装: DO-247-2 (Straight Leads)
库存16,728
1000V
60A
2V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
115ns
20µA @ 1000V
-
Through Hole
DO-247-2 (Straight Leads)
DO-247
175°C (Max)
VS-8EWF06S-M3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 8A TO252AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 55ns
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存25,296
600V
8A
1.2V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
55ns
100µA @ 600V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
-40°C ~ 150°C
hot SDM10K45-7-F
Diodes Incorporated

DIODE SCHOTTKY 45V 100MA SOD323

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 100mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 450mV @ 10mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1µA @ 10V
  • Capacitance @ Vr, F: 6pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: SC-76, SOD-323
库存2,715,192
45V
100mA (DC)
450mV @ 10mA
Small Signal =< 200mA (Io), Any Speed
-
1µA @ 10V
6pF @ 10V, 1MHz
Surface Mount
SC-76, SOD-323
SOD-323
-40°C ~ 150°C
ACDBB260-HF
Comchip Technology

AUTOMOTIVE DIODE SCHOTTKY 60V 2A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 60 V
  • Capacitance @ Vr, F: 70pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB/DO-214AA
  • Operating Temperature - Junction: -55°C ~ 125°C
封装: -
Request a Quote
60 V
2A
700 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 60 V
70pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
SMB/DO-214AA
-55°C ~ 125°C
SB230L-BP
Micro Commercial Co

Interface

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 30 V
  • Capacitance @ Vr, F: 180pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: -55°C ~ 125°C
封装: -
Request a Quote
30 V
2A
450 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 30 V
180pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-15
-55°C ~ 125°C
S2GFSH
Taiwan Semiconductor Corporation

2A, 400V, STANDARD RECOVERY RECT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 400 V
  • Capacitance @ Vr, F: 12pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: SOD-128
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
库存84,000
400 V
2A
1.1 V @ 2 A
Standard Recovery >500ns, > 200mA (Io)
-
1 µA @ 400 V
12pF @ 4V, 1MHz
Surface Mount
SOD-128
SOD-128
-55°C ~ 150°C
64440211AA
Vishay

INTAPAK BRIDGE BARRIER VS-644402

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封装: -
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JANTX1N6942UTK3-TR
Microchip Technology

DIODE SCHOTTKY 45V 150A THINKEY3

  • Diode Type: Schottky, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 460 mV @ 50 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 mA @ 45 V
  • Capacitance @ Vr, F: 7000pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: ThinKey™3
  • Supplier Device Package: ThinKey™3
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: -
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45 V
150A
460 mV @ 50 A
Fast Recovery =< 500ns, > 200mA (Io)
-
5 mA @ 45 V
7000pF @ 5V, 1MHz
Surface Mount
ThinKey™3
ThinKey™3
-65°C ~ 150°C
NTE573-1
NTE Electronics, Inc

DIODE SCHOTTKY 100V 5A DO201AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 100 V
  • Capacitance @ Vr, F: 380pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: -
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100 V
5A
850 mV @ 5 A
No Recovery Time > 500mA (Io)
-
500 µA @ 100 V
380pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 150°C
V5NM63HM3-H
Vishay

5A, 60V, DFN3820A TRENCH SKY REC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 630 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 60 V
  • Capacitance @ Vr, F: 770pF @ 4V, 1MHz
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 2-VDFN
  • Supplier Device Package: DFN3820A
  • Operating Temperature - Junction: -40°C ~ 175°C
封装: -
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60 V
5A
630 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
10 µA @ 60 V
770pF @ 4V, 1MHz
Surface Mount, Wettable Flank
2-VDFN
DFN3820A
-40°C ~ 175°C
R36140
Microchip Technology

DIODE GEN PURP 1.4KV 70A DO5

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 1400 V
  • Current - Average Rectified (Io): 70A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 5 µs
  • Current - Reverse Leakage @ Vr: 25 µA @ 1400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5 (DO-203AB)
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
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1400 V
70A
1.25 V @ 200 A
Standard Recovery >500ns, > 200mA (Io)
5 µs
25 µA @ 1400 V
-
Stud Mount
DO-203AB, DO-5, Stud
DO-5 (DO-203AB)
-55°C ~ 175°C
S43140TS
Microchip Technology

DIODE GP 1.4KV 150A DO205AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1400 V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 1400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-205AA (DO-8)
  • Operating Temperature - Junction: -65°C ~ 200°C
封装: -
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1400 V
150A
1.1 V @ 200 A
Standard Recovery >500ns, > 200mA (Io)
-
50 µA @ 1400 V
-
Stud Mount
DO-205AA, DO-8, Stud
DO-205AA (DO-8)
-65°C ~ 200°C
B260-13-F-2477
Diodes Incorporated

DIODE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 60 V
  • Capacitance @ Vr, F: 200pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: -
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60 V
2A
700 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 60 V
200pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
SMB
-65°C ~ 150°C