页 452 - 二极管 - 整流器 - 单 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
JAN1N5804US	Microsemi Corporation	DIODE GEN PURP 100V 2.5A D5A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2.5A Voltage - Forward (Vf) (Max) @ If: 975mV @ 2.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 1µA @ 100V Capacitance @ Vr, F: 25pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 175°C	封装: SQ-MELF, A	库存4,432	100V	2.5A	975mV @ 2.5A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 100V	25pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
SET121203	Semtech Corporation	DIODE GEN PURP 1KV 30A MODULE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 2000ns Current - Reverse Leakage @ Vr: 2µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Solder Package / Case: Module Supplier Device Package: - Operating Temperature - Junction: -55°C ~ 150°C	封装: Module	库存2,816	1000V	30A	1.2V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	2000ns	2µA @ 1000V	-	Solder	Module	-	-55°C ~ 150°C
RA203620XX	Powerex Inc.	DIODE MODULE 3.6KV 2000A PWRDISC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 3600V Current - Average Rectified (Io): 2000A Voltage - Forward (Vf) (Max) @ If: 1.45V @ 3000A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 25µs Current - Reverse Leakage @ Vr: 200mA @ 3600V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AD Supplier Device Package: Pow-R-Disc Operating Temperature - Junction: -	封装: DO-200AD	库存3,488	3600V	2000A	1.45V @ 3000A	Standard Recovery >500ns, > 200mA (Io)	25µs	200mA @ 3600V	-	Chassis Mount	DO-200AD	Pow-R-Disc	-
SCHF15000	Semtech Corporation	DIODE GP 15KV 500MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 15000V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 20V @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 1µA @ 15000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -55°C ~ 150°C	封装: Axial	库存7,488	15000V	500mA	20V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	100ns	1µA @ 15000V	-	Through Hole	Axial	-	-55°C ~ 150°C
VS-12TQ035STRRPBF	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 35V 15A D2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 560mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.75mA @ 35V Capacitance @ Vr, F: 900pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存2,448	35V	15A	560mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.75mA @ 35V	900pF @ 5V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 150°C
NRVUB1620CTRT4G	ON Semiconductor	DIODE ULT FAST 200V 16A D2PAK-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK-3 Operating Temperature - Junction: -65°C ~ 175°C	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存3,344	200V	8A	1.2V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	85ns	5µA @ 200V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK-3	-65°C ~ 175°C
S5K-M3/9AT	Vishay Semiconductor Diodes Division	DIODE GPP 5A 800V DO-214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5µs Current - Reverse Leakage @ Vr: 10µA @ 800V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AB, SMC	库存6,272	800V	5A	1.15V @ 5A	Standard Recovery >500ns, > 200mA (Io)	2.5µs	10µA @ 800V	40pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
CDBA1100-G	Comchip Technology	DIODE SCHOTTKY 100V 1A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 850mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-214AC, SMA	库存3,296	100V	1A	850mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 100V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-65°C ~ 150°C
C4D02120E-TR	Cree/Wolfspeed	DIODE SCHOTTKY 1.2KV 9A TO252-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 9A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 1200V Capacitance @ Vr, F: 167pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存4,688	1200V	9A	1.8V @ 2A	No Recovery Time > 500mA (Io)	0ns	50µA @ 1200V	167pF @ 0V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252-2	-55°C ~ 175°C
CMSH1-150HE TR13	Central Semiconductor Corp	DIODE SCHOTTKY 150V 1A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 150V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-214AC, SMA	库存7,792	150V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 150V	-	Surface Mount	DO-214AC, SMA	SMA	-65°C ~ 150°C
1N4005E-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-204AL, DO-41, Axial	库存147,552	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
P600D	Diotec Semiconductor	DIODE STD D8X7.5 200V 6A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: P600, Axial Supplier Device Package: P600 Operating Temperature - Junction: -50°C ~ 175°C	封装: -	库存6,156	200 V	6A	1.1 V @ 6 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	10 µA @ 200 V	-	Through Hole	P600, Axial	P600	-50°C ~ 175°C
NTE6037	NTE Electronics, Inc	DIODE GEN PURP 600V 85A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 85A Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 267 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 100 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -40°C ~ 125°C	封装: -	Request a Quote	600 V	85A	1.75 V @ 267 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	100 µA @ 600 V	-	Stud Mount	DO-203AA, DO-5, Stud	DO-5	-40°C ~ 125°C
S10GC-HF	Comchip Technology	DIODE GEN PURP 400V 10A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	400 V	10A	1 V @ 10 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 400 V	100pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
MGR1602-BP	Micro Commercial Co	DIODE GEN PURP 100V 16A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 16 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 100 V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	100 V	16A	1.1 V @ 16 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 100 V	100pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SIC15120B-BP	Micro Commercial Co	Interface Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 40 µA @ 1200 V Capacitance @ Vr, F: 1059pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	1200 V	15A	1.8 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 1200 V	1059pF @ 0V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
RHRD650S	Harris Corporation	DIODE GEN PURP 500V 6A TO252 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 6 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 100 µA @ 500 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 (DPAK) Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	500 V	6A	2.1 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	100 µA @ 500 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252 (DPAK)	-65°C ~ 175°C
SD840S_L2_00001	Panjit International Inc.	DIODE SCHOTTKY 40V 8A TO252 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 Operating Temperature - Junction: -55°C ~ 125°C	封装: -	Request a Quote	40 V	8A	550 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 40 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252	-55°C ~ 125°C
BYS12-90HE3_A-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 90V 1.5A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 90 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	90 V	1.5A	750 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 90 V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
FFSH1065B-F085	onsemi	DIODE SIL CARB 650V 11.5A TO247 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 11.5A Voltage - Forward (Vf) (Max) @ If: - Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 40 µA @ 650 V Capacitance @ Vr, F: 421pF @ 1V, 100kHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C	封装: -	库存5,352	650 V	11.5A	-	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	421pF @ 1V, 100kHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
MBRP30035L	Motorola	RECTIFIER, SCHOTTKY, 300A, 35V Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35 V Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: 570 mV @ 300 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 mA @ 35 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: POWERTAP II Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	35 V	300A	570 mV @ 300 A	Fast Recovery =< 500ns, > 200mA (Io)	-	10 mA @ 35 V	-	Chassis Mount	Module	POWERTAP II	-55°C ~ 150°C
CMF02A-LQ-M	Toshiba Semiconductor and Storage	DIODE GEN PURP 600V 1A M-FLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 2 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Current - Reverse Leakage @ Vr: 50 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: 150°C	封装: -	Request a Quote	600 V	1A	2 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	50 µA @ 600 V	-	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	150°C
MURB15120C-TP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 10 µA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	1200 V	15A	2.4 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	10 µA @ 1200 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 150°C
1N5819HW-7-G	Diodes Incorporated	DIODE SCHOTTKY 40V 1A SOD123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 40 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -65°C ~ 125°C	封装: -	Request a Quote	40 V	1A	450 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 40 V	50pF @ 4V, 1MHz	Surface Mount	SOD-123	SOD-123	-65°C ~ 125°C
1N250	Microchip Technology	DIODE GEN PURP 200V 40A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 200°C	封装: -	Request a Quote	200 V	40A	1.19 V @ 90 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 200 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5 (DO-203AB)	-65°C ~ 200°C
DFLR1600Q-7	Diodes Incorporated	DIODE GP 600V 1A POWERDI123 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3 µA @ 600 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: POWERDI®123 Supplier Device Package: PowerDI™ 123 Operating Temperature - Junction: -65°C ~ 150°C	封装: -	库存9,000	600 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	3 µA @ 600 V	10pF @ 4V, 1MHz	Surface Mount	POWERDI®123	PowerDI™ 123	-65°C ~ 150°C
YQ3LAM10DTFTR	Rohm Semiconductor	TRENCH MOS STRUCTURE, 100V, 3A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 640 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30 µA @ 100 V Capacitance @ Vr, F: 140pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: PMDTM Operating Temperature - Junction: 175°C	封装: -	库存10,500	100 V	3A	640 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	30 µA @ 100 V	140pF @ 4V, 1MHz	Surface Mount	SOD-128	PMDTM	175°C
VSSAF5M10-M3-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 100V 5A DO221AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 790 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400 µA @ 100 V Capacitance @ Vr, F: 470pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: DO-221AC (SlimSMA) Operating Temperature - Junction: -40°C ~ 175°C	封装: -	Request a Quote	100 V	5A	790 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	400 µA @ 100 V	470pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	DO-221AC (SlimSMA)	-40°C ~ 175°C
CDS5819-1	Microchip Technology	SMALL-SIGNAL SCHOTTKY Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
MUR1620-BP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 65pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	200 V	16A	975 mV @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 200 V	65pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C

JAN1N5804US

Microsemi Corporation

DIODE GEN PURP 100V 2.5A D5A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 2.5A
Voltage - Forward (Vf) (Max) @ If: 975mV @ 2.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 1µA @ 100V
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C

封装: SQ-MELF, A

库存4,432

100V

2.5A

975mV @ 2.5A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

1µA @ 100V

25pF @ 10V, 1MHz

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 175°C

SET121203

Semtech Corporation

DIODE GEN PURP 1KV 30A MODULE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2000ns
Current - Reverse Leakage @ Vr: 2µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Solder
Package / Case: Module
Supplier Device Package: -
Operating Temperature - Junction: -55°C ~ 150°C

封装: Module

库存2,816

1000V

30A

1.2V @ 9A

Fast Recovery =< 500ns, > 200mA (Io)

2000ns

2µA @ 1000V

-

Solder

Module

-

-55°C ~ 150°C

RA203620XX

Powerex Inc.

DIODE MODULE 3.6KV 2000A PWRDISC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 3600V
Current - Average Rectified (Io): 2000A
Voltage - Forward (Vf) (Max) @ If: 1.45V @ 3000A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25µs
Current - Reverse Leakage @ Vr: 200mA @ 3600V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AD
Supplier Device Package: Pow-R-Disc
Operating Temperature - Junction: -

封装: DO-200AD

库存3,488

3600V

2000A

1.45V @ 3000A

Standard Recovery >500ns, > 200mA (Io)

25µs

200mA @ 3600V

-

Chassis Mount

DO-200AD

Pow-R-Disc

-

SCHF15000

Semtech Corporation

DIODE GP 15KV 500MA AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 15000V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 20V @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 1µA @ 15000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -55°C ~ 150°C

封装: Axial

库存7,488

15000V

500mA

20V @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

100ns

1µA @ 15000V

-

Through Hole

Axial

-

-55°C ~ 150°C

VS-12TQ035STRRPBF

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 15A D2PAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 560mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.75mA @ 35V
Capacitance @ Vr, F: 900pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存2,448

35V

15A

560mV @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

-

1.75mA @ 35V

900pF @ 5V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 150°C

NRVUB1620CTRT4G

ON Semiconductor

DIODE ULT FAST 200V 16A D2PAK-3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK-3
Operating Temperature - Junction: -65°C ~ 175°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存3,344

200V

8A

1.2V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

85ns

5µA @ 200V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK-3

-65°C ~ 175°C

S5K-M3/9AT

Vishay Semiconductor Diodes Division

DIODE GPP 5A 800V DO-214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5µs
Current - Reverse Leakage @ Vr: 10µA @ 800V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AB, SMC

库存6,272

800V

5A

1.15V @ 5A

Standard Recovery >500ns, > 200mA (Io)

2.5µs

10µA @ 800V

40pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 150°C

CDBA1100-G

Comchip Technology

DIODE SCHOTTKY 100V 1A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-214AC, SMA

库存3,296

100V

1A

850mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 100V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-65°C ~ 150°C

C4D02120E-TR

Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 9A TO252-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 9A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 1200V
Capacitance @ Vr, F: 167pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存4,688

1200V

9A

1.8V @ 2A

No Recovery Time > 500mA (Io)

0ns

50µA @ 1200V

167pF @ 0V, 1MHz

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

TO-252-2

-55°C ~ 175°C

CMSH1-150HE TR13

Central Semiconductor Corp

DIODE SCHOTTKY 150V 1A SMA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-214AC, SMA

库存7,792

150V

1A

900mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

50µA @ 150V

-

Surface Mount

DO-214AC, SMA

SMA

-65°C ~ 150°C

1N4005E-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-204AL, DO-41, Axial

库存147,552

600V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 600V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

P600D

Diotec Semiconductor

DIODE STD D8X7.5 200V 6A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: P600, Axial
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 175°C

封装: -

库存6,156

200 V

6A

1.1 V @ 6 A

Standard Recovery >500ns, > 200mA (Io)

1.5 µs

10 µA @ 200 V

-

Through Hole

P600, Axial

P600

-50°C ~ 175°C

NTE6037

NTE Electronics, Inc

DIODE GEN PURP 600V 85A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 85A
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 267 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C

封装: -

Request a Quote

600 V

85A

1.75 V @ 267 A

Fast Recovery =< 500ns, > 200mA (Io)

500 ns

100 µA @ 600 V

-

Stud Mount

DO-203AA, DO-5, Stud

DO-5

-40°C ~ 125°C

S10GC-HF

Comchip Technology

DIODE GEN PURP 400V 10A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

400 V

10A

1 V @ 10 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 400 V

100pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

MGR1602-BP

Micro Commercial Co

DIODE GEN PURP 100V 16A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 16 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

100 V

16A

1.1 V @ 16 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 100 V

100pF @ 4V, 1MHz

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

SIC15120B-BP

Micro Commercial Co

Interface

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
Capacitance @ Vr, F: 1059pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

Request a Quote

1200 V

15A

1.8 V @ 15 A

No Recovery Time > 500mA (Io)

0 ns

40 µA @ 1200 V

1059pF @ 0V, 1MHz

Through Hole

TO-220-2

TO-220AC

-55°C ~ 175°C

RHRD650S

Harris Corporation

DIODE GEN PURP 500V 6A TO252

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 500 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 6 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 100 µA @ 500 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

500 V

6A

2.1 V @ 6 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

100 µA @ 500 V

-

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252 (DPAK)

-65°C ~ 175°C

SD840S_L2_00001

Panjit International Inc.

DIODE SCHOTTKY 40V 8A TO252

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 125°C

封装: -

Request a Quote

40 V

8A

550 mV @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 µA @ 40 V

-

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252

-55°C ~ 125°C

BYS12-90HE3_A-I

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 90V 1.5A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90 V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

90 V

1.5A

750 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 90 V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

FFSH1065B-F085

onsemi

DIODE SIL CARB 650V 11.5A TO247

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 11.5A
Voltage - Forward (Vf) (Max) @ If: -
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Capacitance @ Vr, F: 421pF @ 1V, 100kHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

库存5,352

650 V

11.5A

-

No Recovery Time > 500mA (Io)

0 ns

40 µA @ 650 V

421pF @ 1V, 100kHz

Through Hole

TO-247-2

-55°C ~ 175°C

MBRP30035L

Motorola

RECTIFIER, SCHOTTKY, 300A, 35V

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35 V
Current - Average Rectified (Io): 300A
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 300 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 mA @ 35 V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: POWERTAP II
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

35 V

300A

570 mV @ 300 A

Fast Recovery =< 500ns, > 200mA (Io)

-

10 mA @ 35 V

-

Chassis Mount

Module

POWERTAP II

-55°C ~ 150°C

CMF02A-LQ-M

Toshiba Semiconductor and Storage

DIODE GEN PURP 600V 1A M-FLAT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 2 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: 150°C

封装: -

Request a Quote

600 V

1A

2 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

100 ns

50 µA @ 600 V

-

Surface Mount

SOD-128

M-FLAT (2.4x3.8)

150°C

MURB15120C-TP

Micro Commercial Co

Interface

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

1200 V

15A

2.4 V @ 15 A

Fast Recovery =< 500ns, > 200mA (Io)

75 ns

10 µA @ 1200 V

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 150°C

1N5819HW-7-G

Diodes Incorporated

DIODE SCHOTTKY 40V 1A SOD123

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 125°C

封装: -

Request a Quote

40 V

1A

450 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1 mA @ 40 V

50pF @ 4V, 1MHz

Surface Mount

SOD-123

-65°C ~ 125°C

1N250

Microchip Technology

DIODE GEN PURP 200V 40A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C

封装: -

Request a Quote

200 V

40A

1.19 V @ 90 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 200 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5 (DO-203AB)

-65°C ~ 200°C

DFLR1600Q-7

Diodes Incorporated

DIODE GP 600V 1A POWERDI123

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: POWERDI®123
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

库存9,000

600 V

1A

1.1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

-

3 µA @ 600 V

10pF @ 4V, 1MHz

Surface Mount

POWERDI®123

PowerDI™ 123

-65°C ~ 150°C

YQ3LAM10DTFTR

Rohm Semiconductor

TRENCH MOS STRUCTURE, 100V, 3A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 30 µA @ 100 V
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: PMDTM
Operating Temperature - Junction: 175°C

封装: -

库存10,500

100 V

3A

640 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

30 µA @ 100 V

140pF @ 4V, 1MHz

Surface Mount

SOD-128

PMDTM

175°C

VSSAF5M10-M3-I

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 100V 5A DO221AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400 µA @ 100 V
Capacitance @ Vr, F: 470pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 175°C

封装: -

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100 V

5A

790 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

400 µA @ 100 V

470pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

DO-221AC (SlimSMA)

-40°C ~ 175°C

CDS5819-1

Microchip Technology

SMALL-SIGNAL SCHOTTKY

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

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-

MUR1620-BP

Micro Commercial Co

Interface

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

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200 V

16A

975 mV @ 16 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 200 V

65pF @ 4V, 1MHz

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C