页 164 - 二极管 - 整流器 - 单 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
GP10-4004EHM3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-204AL, DO-41, Axial	库存5,600	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	3µs	5µA @ 400V	8pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
SS36HE3/57T	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 3A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 750mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AB, SMC	库存601,200	60V	3A	750mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
MBR750-E3/45	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 50V 7.5A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 7.5A Voltage - Forward (Vf) (Max) @ If: 750mV @ 7.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 175°C	封装: TO-220-2	库存4,016	50V	7.5A	750mV @ 7.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	TO-220-2	TO-220AC	-65°C ~ 175°C
BY229X-800-E3/45	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 8A ITO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.85V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 145ns Current - Reverse Leakage @ Vr: 10µA @ 800V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: ITO-220AC Operating Temperature - Junction: -40°C ~ 150°C	封装: TO-220-2 Full Pack, Isolated Tab	库存4,768	800V	8A	1.85V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	145ns	10µA @ 800V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	ITO-220AC	-40°C ~ 150°C
MSS1P3L-E3/89A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 1A MICROSMP Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 250µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: MicroSMP Supplier Device Package: MicroSMP Operating Temperature - Junction: -55°C ~ 150°C	封装: MicroSMP	库存1,265,700	30V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	250µA @ 30V	-	Surface Mount	MicroSMP	MicroSMP	-55°C ~ 150°C
V30120S-E3/45	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 120V 30A TO220AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 120V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -40°C ~ 150°C	封装: TO-220-3	库存120,000	120V	30A	1.1V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 120V	-	Through Hole	TO-220-3	TO-220AB	-40°C ~ 150°C
1N4593R	GeneSiC Semiconductor	DIODE GEN REV 800V 150A DO205AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 150A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5.5mA @ 800V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -60°C ~ 200°C	封装: DO-205AA, DO-8, Stud	库存4,528	800V	150A	1.5V @ 150A	Standard Recovery >500ns, > 200mA (Io)	-	5.5mA @ 800V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-60°C ~ 200°C
1N6620US	Microsemi Corporation	DIODE GEN PURP 220V 1.2A A-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 220V Current - Average Rectified (Io): 1.2A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 500nA @ 220V Capacitance @ Vr, F: 10pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: A-MELF Operating Temperature - Junction: -65°C ~ 150°C	封装: SQ-MELF, A	库存3,168	220V	1.2A	1.4V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	500nA @ 220V	10pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	A-MELF	-65°C ~ 150°C
SMMSD914T1G	ON Semiconductor	DIODE GEN PURP 100V 200MA SOD123 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 5µA @ 75V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C	封装: SOD-123	库存2,100	100V	200mA (DC)	1V @ 10mA	Small Signal =< 200mA (Io), Any Speed	4ns	5µA @ 75V	4pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-55°C ~ 150°C
S10A-TP	Micro Commercial Co	DIODE GEN PURP 50V 10A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AB, SMC	库存159,186	50V	10A	1.2V @ 10A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 50V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
1N4149	Fairchild/ON Semiconductor	DIODE GEN PURP 100V 500MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 25nA @ 20V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max)	封装: DO-204AH, DO-35, Axial	库存1,190,400	100V	500mA	1V @ 10mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	25nA @ 20V	2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
LL4150GS18	Vishay Semiconductor Diodes Division	DIODE GEN 50V 600MA MINI MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 600mA Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 50V Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: SOD-80 MiniMELF Operating Temperature - Junction: -55°C ~ 175°C	封装: DO-213AC, MINI-MELF, SOD-80	库存85,254	50V	600mA	1V @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	100nA @ 50V	2.5pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	SOD-80 MiniMELF	-55°C ~ 175°C
SF2GDF-13	Diodes Incorporated	DIODE GEN PURP 400V 2A DFLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: D-Flat Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	400 V	2A	1.3 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 400 V	50pF @ 4V, 1MHz	Surface Mount	2-SMD, Flat Lead	D-Flat	-55°C ~ 150°C
ER108_R2_00001	Panjit International Inc.	DIODE GEN PURP 800V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 1 µA @ 800 V Capacitance @ Vr, F: 17pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	800 V	1A	2.5 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	1 µA @ 800 V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
R6000830XXYA	Powerex Inc.	DIODE GP 800V 300A DO205AB DO9 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 13 µs Current - Reverse Leakage @ Vr: 50 mA @ 800 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB (DO-9) Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	800 V	300A	-	Standard Recovery >500ns, > 200mA (Io)	13 µs	50 mA @ 800 V	-	Stud Mount	DO-205AB, DO-9, Stud	DO-205AB (DO-9)	-65°C ~ 150°C
SFA1008G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 10A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存3,000	600 V	10A	1.7 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 600 V	50pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
HER102T-R	EIC SEMICONDUCTOR INC.	DIODE GEN PURP 100V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	100 V	1A	1.1 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 100 V	50pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
CD123D-B140LR	Bourns Inc.	DIODE SCHOTTKY 40V 1A 123D Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 380 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 40 V Capacitance @ Vr, F: 115pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: Chip, Concave Terminals Supplier Device Package: 123D Operating Temperature - Junction: -55°C ~ 125°C	封装: -	库存27,720	40 V	1A	380 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 40 V	115pF @ 4V, 1MHz	Surface Mount	Chip, Concave Terminals	123D	-55°C ~ 125°C
M2325HA450	IXYS	DIODE GEN PURP 4.5KV 2325A W121 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 4500 V Current - Average Rectified (Io): 2325A Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 2500 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5.4 µs Current - Reverse Leakage @ Vr: 150 mA @ 4500 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AD Supplier Device Package: W121 Operating Temperature - Junction: -40°C ~ 150°C	封装: -	Request a Quote	4500 V	2325A	2.6 V @ 2500 A	Standard Recovery >500ns, > 200mA (Io)	5.4 µs	150 mA @ 4500 V	-	Chassis Mount	DO-200AD	W121	-40°C ~ 150°C
FR3D-TP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	200 V	3A	1.3 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	10 µA @ 200 V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-55°C ~ 150°C
SGL1-20	Diotec Semiconductor	IC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 20 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA, MINI-MELF Operating Temperature - Junction: -50°C ~ 150°C	封装: -	Request a Quote	20 V	1A	500 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 20 V	-	Surface Mount	DO-213AA	DO-213AA, MINI-MELF	-50°C ~ 150°C
ER304-AP	Micro Commercial Co	DIODE GEN PURP 400V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 35pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	400 V	3A	1.25 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 400 V	35pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
BAT43-L0-A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 200MA DO35 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Current - Reverse Leakage @ Vr: 500 nA @ 25 V Capacitance @ Vr, F: 7pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 125°C	封装: -	Request a Quote	30 V	200mA	1 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	5 ns	500 nA @ 25 V	7pF @ 1V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 125°C
DSEI36-06AS-TUB	IXYS	DIODE GEN PURP 600V 37A TO263AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 37A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 37 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 100 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AA Operating Temperature - Junction: -40°C ~ 150°C	封装: -	库存990	600 V	37A	1.6 V @ 37 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	100 µA @ 600 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AA	-40°C ~ 150°C
SMBT1370LT1	onsemi	SS SOT23 GP XSTR SPCL TR Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
R3660	Microchip Technology	DIODE GEN PURP 600V 70A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 µs Current - Reverse Leakage @ Vr: 25 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	600 V	70A	1.25 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	5 µs	25 µA @ 600 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5 (DO-203AB)	-55°C ~ 175°C
JANS1N5620US	Microchip Technology	DIODE GEN PURP 800V 1A A SQ-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: A, SQ-MELF Operating Temperature - Junction: -65°C ~ 200°C	封装: -	Request a Quote	800 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	-	-	Surface Mount	SQ-MELF, A	A, SQ-MELF	-65°C ~ 200°C
JAN1N5554-TR	Microchip Technology	DIODE GEN PURP 1KV 3A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Current - Reverse Leakage @ Vr: 1 µA @ 1 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	1000 V	3A	1.3 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 1 V	-	Through Hole	B, Axial	B, Axial	-65°C ~ 175°C
1N4004-BP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	400 V	1A	1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	5 µA @ 400 V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
RBR2MM60CTFTR	Rohm Semiconductor	DIODE SCHOTTKY 60V 2A PMDU Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 120 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: PMDU Operating Temperature - Junction: 150°C (Max)	封装: -	库存12,021	60 V	2A	550 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	120 µA @ 60 V	-	Surface Mount	SOD-123F	PMDU	150°C (Max)

GP10-4004EHM3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-204AL, DO-41, Axial

库存5,600

400V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

3µs

5µA @ 400V

8pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

SS36HE3/57T

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 3A DO214AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AB, SMC

库存601,200

60V

3A

750mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 60V

-

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 150°C

MBR750-E3/45

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 7.5A TO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 7.5A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 7.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C

封装: TO-220-2

库存4,016

50V

7.5A

750mV @ 7.5A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 50V

-

Through Hole

TO-220-2

TO-220AC

-65°C ~ 175°C

BY229X-800-E3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 8A ITO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.85V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145ns
Current - Reverse Leakage @ Vr: 10µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -40°C ~ 150°C

封装: TO-220-2 Full Pack, Isolated Tab

库存4,768

800V

8A

1.85V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

145ns

10µA @ 800V

-

Through Hole

TO-220-2 Full Pack, Isolated Tab

ITO-220AC

-40°C ~ 150°C

MSS1P3L-E3/89A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 1A MICROSMP

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 250µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: MicroSMP
Supplier Device Package: MicroSMP
Operating Temperature - Junction: -55°C ~ 150°C

封装: MicroSMP

库存1,265,700

30V

1A

500mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

250µA @ 30V

-

Surface Mount

MicroSMP

-55°C ~ 150°C

V30120S-E3/45

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 120V 30A TO220AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 120V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 120V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -40°C ~ 150°C

封装: TO-220-3

库存120,000

120V

30A

1.1V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 120V

-

Through Hole

TO-220-3

TO-220AB

-40°C ~ 150°C

1N4593R

GeneSiC Semiconductor

DIODE GEN REV 800V 150A DO205AA

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 150A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5.5mA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -60°C ~ 200°C

封装: DO-205AA, DO-8, Stud

库存4,528

800V

150A

1.5V @ 150A

Standard Recovery >500ns, > 200mA (Io)

-

5.5mA @ 800V

-

Chassis, Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-60°C ~ 200°C

1N6620US

Microsemi Corporation

DIODE GEN PURP 220V 1.2A A-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 220V
Current - Average Rectified (Io): 1.2A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 500nA @ 220V
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: A-MELF
Operating Temperature - Junction: -65°C ~ 150°C

封装: SQ-MELF, A

库存3,168

220V

1.2A

1.4V @ 1.2A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

500nA @ 220V

10pF @ 10V, 1MHz

Surface Mount

SQ-MELF, A

A-MELF

-65°C ~ 150°C

SMMSD914T1G

ON Semiconductor

DIODE GEN PURP 100V 200MA SOD123

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 5µA @ 75V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C

封装: SOD-123

库存2,100

100V

200mA (DC)

1V @ 10mA

Small Signal =< 200mA (Io), Any Speed

4ns

5µA @ 75V

4pF @ 0V, 1MHz

Surface Mount

SOD-123

-55°C ~ 150°C

S10A-TP

Micro Commercial Co

DIODE GEN PURP 50V 10A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AB, SMC

库存159,186

50V

10A

1.2V @ 10A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 50V

-

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 150°C

1N4149

Fairchild/ON Semiconductor

DIODE GEN PURP 100V 500MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 25nA @ 20V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)

封装: DO-204AH, DO-35, Axial

库存1,190,400

100V

500mA

1V @ 10mA

Fast Recovery =< 500ns, > 200mA (Io)

4ns

25nA @ 20V

2pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

175°C (Max)

LL4150GS18

Vishay Semiconductor Diodes Division

DIODE GEN 50V 600MA MINI MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 600mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100nA @ 50V
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: -55°C ~ 175°C

封装: DO-213AC, MINI-MELF, SOD-80

库存85,254

50V

600mA

1V @ 200mA

Fast Recovery =< 500ns, > 200mA (Io)

4ns

100nA @ 50V

2.5pF @ 0V, 1MHz

Surface Mount

DO-213AC, MINI-MELF, SOD-80

SOD-80 MiniMELF

-55°C ~ 175°C

SF2GDF-13

Diodes Incorporated

DIODE GEN PURP 400V 2A DFLAT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: D-Flat
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

400 V

2A

1.3 V @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 400 V

50pF @ 4V, 1MHz

Surface Mount

2-SMD, Flat Lead

D-Flat

-55°C ~ 150°C

ER108_R2_00001

Panjit International Inc.

DIODE GEN PURP 800V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

800 V

1A

2.5 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

1 µA @ 800 V

17pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-55°C ~ 150°C

R6000830XXYA

Powerex Inc.

DIODE GP 800V 300A DO205AB DO9

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 300A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 13 µs
Current - Reverse Leakage @ Vr: 50 mA @ 800 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

Request a Quote

800 V

300A

-

Standard Recovery >500ns, > 200mA (Io)

13 µs

50 mA @ 800 V

-

Stud Mount

DO-205AB, DO-9, Stud

DO-205AB (DO-9)

-65°C ~ 150°C

SFA1008G

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 10A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存3,000

600 V

10A

1.7 V @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

10 µA @ 600 V

50pF @ 4V, 1MHz

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

HER102T-R

EIC SEMICONDUCTOR INC.

DIODE GEN PURP 100V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

Request a Quote

100 V

1A

1.1 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 100 V

50pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 150°C

CD123D-B140LR

Bourns Inc.

DIODE SCHOTTKY 40V 1A 123D

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 380 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Capacitance @ Vr, F: 115pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: Chip, Concave Terminals
Supplier Device Package: 123D
Operating Temperature - Junction: -55°C ~ 125°C

封装: -

库存27,720

40 V

1A

380 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1 mA @ 40 V

115pF @ 4V, 1MHz

Surface Mount

Chip, Concave Terminals

123D

-55°C ~ 125°C

M2325HA450

IXYS

DIODE GEN PURP 4.5KV 2325A W121

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 4500 V
Current - Average Rectified (Io): 2325A
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 2500 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.4 µs
Current - Reverse Leakage @ Vr: 150 mA @ 4500 V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AD
Supplier Device Package: W121
Operating Temperature - Junction: -40°C ~ 150°C

封装: -

Request a Quote

4500 V

2325A

2.6 V @ 2500 A

Standard Recovery >500ns, > 200mA (Io)

5.4 µs

150 mA @ 4500 V

-

Chassis Mount

DO-200AD

W121

-40°C ~ 150°C

FR3D-TP

Micro Commercial Co

Interface

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC (DO-214AB)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

200 V

3A

1.3 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

10 µA @ 200 V

80pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

SMC (DO-214AB)

-55°C ~ 150°C

SGL1-20

Diotec Semiconductor

IC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA, MINI-MELF
Operating Temperature - Junction: -50°C ~ 150°C

封装: -

Request a Quote

20 V

1A

500 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 20 V

-

Surface Mount

DO-213AA

DO-213AA, MINI-MELF

-50°C ~ 150°C

ER304-AP

Micro Commercial Co

DIODE GEN PURP 400V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

400 V

3A

1.25 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 400 V

35pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

BAT43-L0-A0G

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 30V 200MA DO35

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 125°C

封装: -

Request a Quote

30 V

200mA

1 V @ 200 mA

Small Signal =< 200mA (Io), Any Speed

5 ns

500 nA @ 25 V

7pF @ 1V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

-65°C ~ 125°C

DSEI36-06AS-TUB

IXYS

DIODE GEN PURP 600V 37A TO263AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 37A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 37 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -40°C ~ 150°C

封装: -

库存990

600 V

37A

1.6 V @ 37 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

100 µA @ 600 V

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263AA

-40°C ~ 150°C

SMBT1370LT1

onsemi

SS SOT23 GP XSTR SPCL TR

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

Request a Quote

-

R3660

Microchip Technology

DIODE GEN PURP 600V 70A DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

Request a Quote

600 V

70A

1.25 V @ 200 A

Standard Recovery >500ns, > 200mA (Io)

5 µs

25 µA @ 600 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5 (DO-203AB)

-55°C ~ 175°C

JANS1N5620US

Microchip Technology

DIODE GEN PURP 800V 1A A SQ-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 200°C

封装: -

Request a Quote

800 V

1A

1.3 V @ 3 A

Standard Recovery >500ns, > 200mA (Io)

2 µs

-

Surface Mount

SQ-MELF, A

A, SQ-MELF

-65°C ~ 200°C

JAN1N5554-TR

Microchip Technology

DIODE GEN PURP 1KV 3A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: B, Axial
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

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1000 V

3A

1.3 V @ 9 A

Standard Recovery >500ns, > 200mA (Io)

2 µs

1 µA @ 1 V

-

Through Hole

B, Axial

-65°C ~ 175°C

1N4004-BP

Micro Commercial Co

Interface

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

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400 V

1A

1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

2 µs

5 µA @ 400 V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-55°C ~ 150°C

RBR2MM60CTFTR

Rohm Semiconductor

DIODE SCHOTTKY 60V 2A PMDU

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 120 µA @ 60 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)

封装: -

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60 V

2A

550 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

120 µA @ 60 V

-

Surface Mount

SOD-123F

PMDU

150°C (Max)