图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microsemi Corporation |
DIODE GEN PURP 400V 400MA DO35
|
封装: DO-204AH, DO-35, Axial |
库存5,712 |
|
400V | 400mA | 1V @ 400mA | Standard Recovery >500ns, > 200mA (Io) | - | 50nA @ 400V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1.5A DO204AC
|
封装: DO-204AC, DO-15, Axial |
库存7,200 |
|
200V | 1.5A | 1.1V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 3.5µs | 5µA @ 200V | - | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 175°C |
||
STMicroelectronics |
DIODE GEN PURP 600V 30A TO220AC
|
封装: TO-220-2 |
库存4,976 |
|
600V | 30A | 1.55V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 25µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
||
Infineon Technologies Industrial Power and Controls Americas |
RECTIFIER DIODE 2000V 360A
|
封装: - |
库存2,304 |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Microsemi Corporation |
DIODE GEN PURP 150V 5A DO215AB
|
封装: DO-215AB, SMC Gull Wing |
库存5,568 |
|
150V | 5A | 950mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 150V | - | Surface Mount | DO-215AB, SMC Gull Wing | DO-215AB | -55°C ~ 175°C |
||
TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 8A, 6
|
封装: DO-214AB, SMC |
库存6,448 |
|
60V | 8A | 750mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 150°C |
||
Micro Commercial Co |
DIODE GEN PURPOSE 100V DO41
|
封装: DO-204AC, DO-15, Axial |
库存3,392 |
|
100V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 100V | 20pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-41 | -55°C ~ 125°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 10A TO220FP
|
封装: TO-220-2 Full Pack |
库存22,164 |
|
1200V | 10A | 1.1V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 1200V | - | Through Hole | TO-220-2 Full Pack | TO-220AC Full Pack | -40°C ~ 150°C |
||
SMC Diode Solutions |
DIODE GEN PURP 600V D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存19,176 |
|
600V | - | 1.55V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 600V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 150°C |
||
Micro Commercial Co |
SCHOTTKY BARRIER RECTIFIERS 45V
|
封装: - |
库存24,000 |
|
45 V | 15A | 600 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 45 V | 705pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277 | -55°C ~ 150°C |
||
Solid State Inc. |
DIODE GEN PURP 100V 40A DO5
|
封装: - |
Request a Quote |
|
100 V | 40A | 1.19 V @ 90 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 200°C |
||
Sanken Electric USA Inc. |
DIODE GEN PURP 100V 1A AXIAL
|
封装: - |
Request a Quote |
|
100 V | 1A | 970 mV @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | Through Hole | Axial | - | -40°C ~ 150°C |
||
Panjit International Inc. |
DIODE SCHOTTKY 60V 8A TO252
|
封装: - |
Request a Quote |
|
60 V | 8A | 750 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 60 V | - | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 | -65°C ~ 175°C |
||
NTE Electronics, Inc |
DIODE GEN PURP 100V 40A DO5
|
封装: - |
Request a Quote |
|
100 V | 40A | 1.3 V @ 40 A | Standard Recovery >500ns, > 200mA (Io) | - | 15 mA @ 100 V | - | Stud Mount | DO-203AA, DO-5, Stud | DO-5 | -65°C ~ 190°C |
||
Panjit International Inc. |
DIODE GEN PURP 100V 1A SOD123FL
|
封装: - |
Request a Quote |
|
100 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 1 µA @ 100 V | 4pF @ 4V, 1MHz | Surface Mount | SOD-123F | SOD-123FL | -50°C ~ 150°C |
||
Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 150V 1A DO213AB
|
封装: - |
Request a Quote |
|
150 V | 1A | 1 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 150 V | 20pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
||
Microchip Technology |
DIODE GEN PURP 800V 70A DO203AB
|
封装: - |
Request a Quote |
|
800 V | 70A | 1.25 V @ 200 A | Standard Recovery >500ns, > 200mA (Io) | - | 25 µA @ 800 V | - | Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -65°C ~ 200°C |
||
Microchip Technology |
STD RECTIFIER
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Micro Commercial Co |
DIODE GEN PURP 50V 2A DO214AA
|
封装: - |
Request a Quote |
|
50 V | 2A | - | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 50 V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -50°C ~ 150°C |
||
Panasonic Electronic Components |
DIODE SCHOTTKY 40V 5A CSP
|
封装: - |
Request a Quote |
|
40 V | 5A | 600 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 45 ns | 100 µA @ 40 V | 140pF @ 10V, 1MHz | Surface Mount | 0606 (1616 Metric) | DCSP1616010-N1 | 150°C (Max) |
||
Solid State Inc. |
DIODE GEN PURP 1.4KV 16A DO4
|
封装: - |
Request a Quote |
|
1400 V | 16A | 1.2 V @ 16 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1400 V | - | Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 150°C |
||
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 2A DO204AC
|
封装: - |
Request a Quote |
|
50 V | 2A | 700 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 50 V | - | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
||
Diotec Semiconductor |
DIODE MELF 300V 3A 175C
|
封装: - |
Request a Quote |
|
300 V | 3A | 1.2 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 5 µA @ 300 V | - | Surface Mount | DO-213AB, MELF | MELF DO-213AB | -50°C ~ 175°C |
||
NTE Electronics, Inc |
DIODE GEN PURP 400V 6A AXIAL
|
封装: - |
Request a Quote |
|
400 V | 6A | 1.3 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 10 µA @ 400 V | 300pF @ 4V, 1MHz | Through Hole | Axial | Axial | -50°C ~ 125°C |
||
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 10A ITO220AB
|
封装: - |
库存594 |
|
600 V | 10A | 1.7 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 10 µA @ 600 V | - | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
||
Taiwan Semiconductor Corporation |
35NS, 2A, 600V, SUPER FAST RECOV
|
封装: - |
库存22,500 |
|
600 V | 2A | 1.7 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 600 V | 12pF @ 4V, 1MHz | Surface Mount | DO-221AC, SMA Flat Leads | SMAF | -55°C ~ 150°C |
||
Rohm Semiconductor |
DIODE SCHOTTKY 60V 1A PMDE
|
封装: - |
库存8,025 |
|
60 V | 1A | 760 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 nA @ 60 V | - | Surface Mount | 2-SMD, Flat Lead | PMDE | 175°C |
||
Vishay General Semiconductor - Diodes Division |
DIODE SCHOTTKY 200V 3.1A TO277A
|
封装: - |
库存1,080 |
|
200 V | 3.1A | 900 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150 µA @ 200 V | 500pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 175°C |
||
Diodes Incorporated |
DIODE
|
封装: - |
Request a Quote |
|
60 V | 3A | 700 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 60 V | 200pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | SMA | -55°C ~ 150°C |
||
Solid State Inc. |
DIODE GEN PURP 400V 16A DO4
|
封装: - |
Request a Quote |
|
400 V | 16A | 1.3 V @ 30 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 400 V | - | Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 200°C |