页 26 - Diodes Incorporated 产品 - 晶体管 - FET,MOSFET - 阵列 | 深圳黑森尔电子
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Diodes Incorporated 产品 - 晶体管 - FET,MOSFET - 阵列

记录 842
页  26/29
图片
零件编号
制造商
描述
封装
库存
数量
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
DMC6070LND-13
Diodes Incorporated

MOSFET N/P-CH 60V 8POWERDI

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.4A
  • Rds On (Max) @ Id, Vgs: 85 mOhm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 731pF @ 20V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8
封装: 8-PowerVDFN
库存6,784
Standard
60V
3.1A, 2.4A
85 mOhm @ 1.5A, 10V
3V @ 250µA
11.5nC @ 10V
731pF @ 20V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PowerDI3333-8
DMP2060UFDB-13
Diodes Incorporated

MOSFET 2P-CH 20V 3.2A 6UDFN

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 10V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
封装: 6-UDFN Exposed Pad
库存6,496
Standard
20V
3.2A
90 mOhm @ 2.9A, 4.5V
1.4V @ 250µA
18nC @ 8V
881pF @ 10V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
DMN2041UFDB-13
Diodes Incorporated

MOSFET 2N-CH 20V 4.7A 6UDFN

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 713pF @ 10V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
封装: 6-UDFN Exposed Pad
库存3,568
Standard
20V
4.7A
40 mOhm @ 4.2A, 4.5V
1.4V @ 250µA
15nC @ 8V
713pF @ 10V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
DMC2041UFDB-13
Diodes Incorporated

MOSFET N/P-CH 20V 6UDFN

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.2A
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 713pF @ 10V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
封装: 6-UDFN Exposed Pad
库存3,968
Standard
20V
4.7A, 3.2A
40 mOhm @ 4.2A, 4.5V
1.4V @ 250µA
15nC @ 8V
713pF @ 10V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
hot ZXMN2088DE6TA
Diodes Incorporated

MOSFET 2N-CH 20V 1.7A SOT-26

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.7A
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 279pF @ 10V
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6
封装: SOT-23-6
库存733,356
Logic Level Gate
20V
1.7A
200 mOhm @ 1A, 4.5V
1V @ 250µA
3.8nC @ 4.5V
279pF @ 10V
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
DMC1029UFDB-13
Diodes Incorporated

MOSFET N/P-CH 12V 6UDFN

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A
  • Rds On (Max) @ Id, Vgs: 29 mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
封装: 6-UDFN Exposed Pad
库存6,064
Standard
12V
5.6A, 3.8A
29 mOhm @ 5A, 4.5V
1V @ 250µA
19.6nC @ 8V
914pF @ 6V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
DMC1028UFDB-13
Diodes Incorporated

MOSFET N/P-CH 12V/20V 6UDFN

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 12V, 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A, 3.4A
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V
  • Power - Max: 1.36W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
封装: 6-UDFN Exposed Pad
库存4,896
Standard
12V, 20V
6A, 3.4A
25 mOhm @ 5.2A, 4.5V
1V @ 250µA
18.5nC @ 8V
787pF @ 6V
1.36W
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
hot DMP3056LSD-13
Diodes Incorporated

MOSFET 2P-CH 30V 6.9A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.9A
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 722pF @ 25V
  • Power - Max: 2.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
封装: 8-SOIC (0.154", 3.90mm Width)
库存634,416
Logic Level Gate
30V
6.9A
45 mOhm @ 6A, 10V
2.1V @ 250µA
13.7nC @ 10V
722pF @ 25V
2.5W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
hot DMN3033LSD-13
Diodes Incorporated

MOSFET 2N-CH 30V 6.9A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.9A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.9A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
封装: 8-SOIC (0.154", 3.90mm Width)
库存154,212
Logic Level Gate
30V
6.9A
20 mOhm @ 6.9A, 10V
2.1V @ 250µA
13nC @ 10V
725pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
DMN4031SSDQ-13
Diodes Incorporated

MOSFET 2N-CH 40V 5.2A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 5.2A
  • Rds On (Max) @ Id, Vgs: 31 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 945pF @ 20V
  • Power - Max: 1.42W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存3,440
Standard
40V
5.2A
31 mOhm @ 6A, 10V
3V @ 250µA
18.6nC @ 10V
945pF @ 20V
1.42W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DMC3016LNS-7
Diodes Incorporated

MOSFET BVDSS: 31V 40V POWERDI333

  • FET Type: N and P-Channel Complementary
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 6.8A (Ta)
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 7A, 10V, 28 mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1184pF @ 15V, 1188pF @ 15V
  • Power - Max: 1.3W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8
封装: 8-PowerVDFN
库存4,048
Standard
30V
9A (Ta), 6.8A (Ta)
16 mOhm @ 7A, 10V, 28 mOhm @ 7A, 10V
2V @ 250µA
9.5nC @ 4.5V
1184pF @ 15V, 1188pF @ 15V
1.3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PowerDI3333-8
DMC3016LNS-13
Diodes Incorporated

MOSFET BVDSS: 31V 40V POWERDI333

  • FET Type: N and P-Channel Complementary
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 6.8A (Ta)
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 7A, 10V, 28 mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1184pF @ 15V, 1188pF @ 15V
  • Power - Max: 1.3W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8
封装: 8-PowerVDFN
库存3,168
Standard
30V
9A (Ta), 6.8A (Ta)
16 mOhm @ 7A, 10V, 28 mOhm @ 7A, 10V
2V @ 250µA
9.5nC @ 4.5V
1184pF @ 15V, 1188pF @ 15V
1.3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PowerDI3333-8
DMC3016LDV-7
Diodes Incorporated

MOSFET BVDSS: 31V 40V POWERDI333

  • FET Type: N and P-Channel Complementary
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc), 15A (Tc)
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 7A, 10V, 25 mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1184pF @ 15V, 1188pF @ 15V
  • Power - Max: 900mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8
封装: 8-PowerVDFN
库存5,968
Standard
30V
21A (Tc), 15A (Tc)
12 mOhm @ 7A, 10V, 25 mOhm @ 7A, 10V
2.4V @ 250µA
9.5nC @ 4.5V
1184pF @ 15V, 1188pF @ 15V
900mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PowerDI3333-8
DMC3016LDV-13
Diodes Incorporated

MOSFET BVDSS: 31V 40V POWERDI333

  • FET Type: N and P-Channel Complementary
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc), 15A (Tc)
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 7A, 10V, 25 mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1184pF @ 15V, 1188pF @ 15V
  • Power - Max: 900mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8
封装: 8-PowerVDFN
库存6,992
Standard
30V
21A (Tc), 15A (Tc)
12 mOhm @ 7A, 10V, 25 mOhm @ 7A, 10V
2.4V @ 250µA
9.5nC @ 4.5V
1184pF @ 15V, 1188pF @ 15V
900mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PowerDI3333-8
DMN3016LDV-7
Diodes Incorporated

MOSFET BVDSS: 25V 30V POWERDI333

  • FET Type: 2 N-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1184pF @ 15V
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8
封装: 8-PowerVDFN
库存2,624
Standard
-
21A (Tc)
12 mOhm @ 7A, 10V
2V @ 250µA
9.5nC @ 4.5V
1184pF @ 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PowerDI3333-8
DMN3016LDV-13
Diodes Incorporated

MOSFET BVDSS: 25V 30V POWERDI333

  • FET Type: 2 N-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1184pF @ 15V
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8
封装: 8-PowerVDFN
库存2,448
Standard
-
21A (Tc)
12 mOhm @ 7A, 10V
2V @ 250µA
9.5nC @ 4.5V
1184pF @ 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PowerDI3333-8
DMN2008LFU-13
Diodes Incorporated

MOSFET 2NCH 20V 14.5A UDFN2030

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 14.5A
  • Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 5.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 42.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1418pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UFDFN Exposed Pad
  • Supplier Device Package: U-DFN2030-6 (Type B)
封装: 6-UFDFN Exposed Pad
库存3,536
Standard
20V
14.5A
5.4 mOhm @ 5.5A, 4.5V
1.5V @ 250µA
42.3nC @ 10V
1418pF @ 10V
1W
-55°C ~ 150°C (TJ)
Surface Mount
6-UFDFN Exposed Pad
U-DFN2030-6 (Type B)
DMC4029SK4-13
Diodes Incorporated

MOSFET N/P-CH 40V 8.3A TO252

  • FET Type: N and P-Channel Complementary
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 8.3A
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19.1nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V
  • Power - Max: 1.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
  • Supplier Device Package: TO-252-4L
封装: TO-252-5, DPak (4 Leads + Tab), TO-252AD
库存5,136
Standard
40V
8.3A
24 mOhm @ 6A, 10V
3V @ 250µA
19.1nC @ 20V
1060pF @ 20V
1.5W
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-5, DPak (4 Leads + Tab), TO-252AD
TO-252-4L
DMC3028LSDX-13
Diodes Incorporated

MOSFET N/P-CH 30V 5.5A/5.8A 8SO

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A, 5.8A
  • Rds On (Max) @ Id, Vgs: 27 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V
  • Power - Max: 1.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存7,664
Logic Level Gate
30V
5.5A, 5.8A
27 mOhm @ 6A, 10V
3V @ 250µA
13.2nC @ 10V
641pF @ 15V
1.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DMC3025LDV-7
Diodes Incorporated

MOSFET BVDSS: 31V 40V POWERDI333

  • FET Type: 1 N-Channel, 1 P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 9.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, 1188pF @ 15V
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8
封装: 8-PowerVDFN
库存6,112
Standard
-
15A (Tc)
25 mOhm @ 7A, 10V
2.4V @ 250µA
4.6nC @ 4.5V, 9.5nC @ 4.5V
500pF @ 15V, 1188pF @ 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PowerDI3333-8
DMC3025LDV-13
Diodes Incorporated

MOSFET BVDSS: 31V 40V POWERDI333

  • FET Type: 1 N-Channel, 1 P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 9.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, 1188pF @ 15V
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8
封装: 8-PowerVDFN
库存2,400
Standard
-
15A (Tc)
25 mOhm @ 7A, 10V
2.4V @ 250µA
4.6nC @ 4.5V, 9.5nC @ 4.5V
500pF @ 15V, 1188pF @ 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PowerDI3333-8
DMN2022UNS-7
Diodes Incorporated

MOSFET 2NCH 20V 10.7A POWERDI

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 10.7A
  • Rds On (Max) @ Id, Vgs: 10.8 mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 10V
  • Power - Max: 1.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8
封装: 8-PowerVDFN
库存2,896
Standard
20V
10.7A
10.8 mOhm @ 4A, 4.5V
1V @ 250µA
20.3nC @ 4.5V
1870pF @ 10V
1.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PowerDI3333-8
DMN2022UNS-13
Diodes Incorporated

MOSFET 8V 24V POWERDI3333-8

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta)
  • Rds On (Max) @ Id, Vgs: 10.8 mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 10V
  • Power - Max: 1.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8
封装: 8-PowerVDFN
库存3,376
Standard
20V
10.7A (Ta)
10.8 mOhm @ 4A, 4.5V
1V @ 250µA
20.3nC @ 4.5V
1870pF @ 10V
1.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PowerDI3333-8
DMP3028LSD-13
Diodes Incorporated

MOSFET 2P-CH 30V 6A SO-8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1241pF @ 15V
  • Power - Max: 1.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存5,728
Standard
30V
6A
25 mOhm @ 7A, 10V
3V @ 250µA
10.9nC @ 10V
1241pF @ 15V
1.3W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DMN3033LSDQ-13
Diodes Incorporated

MOSFET 2N-CH 30V 6.9A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.9A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.9A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存3,584
Standard
30V
6.9A
20 mOhm @ 6.9A, 10V
2.1V @ 250µA
13nC @ 10V
725pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DMS3019SSD-13
Diodes Incorporated

MOSFET 2N-CH 30V 7A/5.7A 8SO

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7A, 5.7A
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1932pF @ 15V
  • Power - Max: 1.19W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封装: 8-SOIC (0.154", 3.90mm Width)
库存4,768
Logic Level Gate
30V
7A, 5.7A
15 mOhm @ 9A, 10V
2.4V @ 250µA
42nC @ 10V
1932pF @ 15V
1.19W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot DMP2004DMK-7
Diodes Incorporated

MOSFET 2P-CH 20V 0.55A SOT-26

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 550mA
  • Rds On (Max) @ Id, Vgs: 900 mOhm @ 430mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V
  • Power - Max: 500mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-26
封装: SOT-23-6
库存420,000
Logic Level Gate
20V
550mA
900 mOhm @ 430mA, 4.5V
1V @ 250µA
-
175pF @ 16V
500mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-26
DMN2016LHAB-7
Diodes Incorporated

MOSFET 2N-CH 20V 7.5A 6UDFN

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A
  • Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V
  • Power - Max: 1.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2030-6
封装: 6-UDFN Exposed Pad
库存4,240
Logic Level Gate
20V
7.5A
15.5 mOhm @ 4A, 4.5V
1.1V @ 250µA
16nC @ 4.5V
1550pF @ 10V
1.2W
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2030-6
DMC3025LNS-7
Diodes Incorporated

MOSFET BVDSS: 31V 40V POWERDI333

  • FET Type: N and P-Channel Complementary
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 6.8A (Ta)
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 10V, 28 mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 9.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, 1188pF @ 15V
  • Power - Max: 1.2W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8
封装: 8-PowerVDFN
库存6,128
Standard
30V
7.2A (Ta), 6.8A (Ta)
25 mOhm @ 7A, 10V, 28 mOhm @ 7A, 10V
2V @ 250µA
4.6nC @ 4.5V, 9.5nC @ 4.5V
500pF @ 15V, 1188pF @ 15V
1.2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PowerDI3333-8
DMC3025LNS-13
Diodes Incorporated

MOSFET BVDSS: 31V 40V POWERDI333

  • FET Type: N and P-Channel Complementary
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 6.8A (Ta)
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 10V, 28 mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 9.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, 1188pF @ 15V
  • Power - Max: 1.2W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8
封装: 8-PowerVDFN
库存3,376
Standard
30V
7.2A (Ta), 6.8A (Ta)
25 mOhm @ 7A, 10V, 28 mOhm @ 7A, 10V
2V @ 250µA
4.6nC @ 4.5V, 9.5nC @ 4.5V
500pF @ 15V, 1188pF @ 15V
1.2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PowerDI3333-8