页 25 - Diodes Incorporated 产品 - 晶体管 - FET，MOSFET - 阵列 | 深圳黑森尔电子
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Diodes Incorporated 产品 - 晶体管 - FET，MOSFET - 阵列

记录 842
页  25/29
图片
零件编号
制造商
描述
封装
库存
数量
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot DMP1055UFDB-7
Diodes Incorporated

MOSFET 2PCH 12V 3.9A UDFN2020

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 3.9A
  • Rds On (Max) @ Id, Vgs: 59 mOhm @ 3.6A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 1028pF @ 6V
  • Power - Max: 1.36W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
封装: 6-UDFN Exposed Pad
库存144,000
Standard
12V
3.9A
59 mOhm @ 3.6A, 4.5V
1V @ 250µA
20.8nC @ 8V
1028pF @ 6V
1.36W
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
DMC1030UFDBQ-7
Diodes Incorporated

MOSFET N/P-CH 12V 5.1A UDFN2020

  • FET Type: N and P-Channel Complementary
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 5.1A
  • Rds On (Max) @ Id, Vgs: 34 mOhm @ 4.6A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1003pF @ 6V
  • Power - Max: 1.36W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
封装: 6-UDFN Exposed Pad
库存7,952
Standard
12V
5.1A
34 mOhm @ 4.6A, 4.5V
1V @ 250µA
23.1nC @ 10V
1003pF @ 6V
1.36W
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
DMP2160UFDBQ-7
Diodes Incorporated

MOSFET 2P-CH 20V 3.8A 6UDFN

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 2.8A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 10V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
封装: 6-UDFN Exposed Pad
库存2,480
Standard
20V
3.8A
70 mOhm @ 2.8A, 4.5V
900mV @ 250µA
6.5nC @ 4.5V
536pF @ 10V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
DMT3020LFDB-13
Diodes Incorporated

MOSFET 2N-CHA 30V 7.7A DFN2020

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta)
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
  • Power - Max: 700mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
封装: 6-UDFN Exposed Pad
库存5,392
Standard
30V
7.7A (Ta)
20 mOhm @ 9A, 10V
3V @ 250µA
7nC @ 10V
393pF @ 15V
700mW
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
hot DMG6968UTS-13
Diodes Incorporated

MOSFET 2N-CH 20V 5.2A 8TSSOP

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.2A
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 6.5A, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
封装: 8-TSSOP (0.173", 4.40mm Width)
库存402,300
Logic Level Gate
20V
5.2A
23 mOhm @ 6.5A, 4.5V
950mV @ 250µA
8.8nC @ 4.5V
143pF @ 10V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
DMN3016LDN-13
Diodes Incorporated

MOSFET BVDSS: 25V 30V V-DFN3030-

  • FET Type: 2 N-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: V-DFN3030-8 (Type J)
封装: 8-PowerVDFN
库存6,576
Standard
-
9.2A (Ta)
20 mOhm @ 11A, 10V
2V @ 250µA
11.3nC @ 4.5V
1415pF @ 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
V-DFN3030-8 (Type J)
DMC1030UFDBQ-13
Diodes Incorporated

MOSFET N/P-CH 12V 5.1A UDFN2020

  • FET Type: N and P-Channel Complementary
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 5.1A
  • Rds On (Max) @ Id, Vgs: 34 mOhm @ 4.6A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1003pF @ 6V
  • Power - Max: 1.36W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
封装: 6-UDFN Exposed Pad
库存6,992
Standard
12V
5.1A
34 mOhm @ 4.6A, 4.5V
1V @ 250µA
23.1nC @ 10V
1003pF @ 6V
1.36W
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
hot DMC1229UFDB-7
Diodes Incorporated

MOSFET N/P-CH 12V U-DFN2020-6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A
  • Rds On (Max) @ Id, Vgs: 29 mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
封装: 6-UDFN Exposed Pad
库存3,760
Logic Level Gate
12V
5.6A, 3.8A
29 mOhm @ 5A, 4.5V
1V @ 250µA
19.6nC @ 8V
914pF @ 6V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
DMG1016VQ-7
Diodes Incorporated

MOSFET N/P-CH 20V SOT563

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 870mA, 640mA
  • Rds On (Max) @ Id, Vgs: 400 mOhm @ 600mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V
  • Power - Max: 530mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
封装: SOT-563, SOT-666
库存5,344
Logic Level Gate
20V
870mA, 640mA
400 mOhm @ 600mA, 4.5V
1V @ 250µA
0.74nC @ 4.5V
60.67pF @ 16V
530mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
hot DMP2160UFDB-7
Diodes Incorporated

MOSFET 2P-CH 20V 3.8A 6UDFN

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 2.8A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 10V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
封装: 6-UDFN Exposed Pad
库存36,000
Logic Level Gate
20V
3.8A
70 mOhm @ 2.8A, 4.5V
900mV @ 250µA
6.5nC @ 4.5V
536pF @ 10V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
DMC1030UFDB-7
Diodes Incorporated

MOSFET BVDSS: 8V 24V U-DFN2020-6

  • FET Type: N and P-Channel Complementary
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta), 3.9A (Ta)
  • Rds On (Max) @ Id, Vgs: 34 mOhm @ 4.6A, 4.5V, 59 mOhm @ 3.6A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 4.5V, 13nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1003pF @ 6V, 1028pF @ 6V
  • Power - Max: 1.36W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
封装: 6-UDFN Exposed Pad
库存2,832
Standard
12V
5.1A (Ta), 3.9A (Ta)
34 mOhm @ 4.6A, 4.5V, 59 mOhm @ 3.6A, 4.5V
1V @ 250µA
12.2nC @ 4.5V, 13nC @ 4.5V
1003pF @ 6V, 1028pF @ 6V
1.36W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
DMN3032LFDBQ-13
Diodes Incorporated

MOSFET 2NCH 30V 6.2A UDFN2020

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.8A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
封装: 6-UDFN Exposed Pad
库存7,552
Standard
30V
6.2A (Ta)
30 mOhm @ 5.8A, 10V
2V @ 250µA
10.6nC @ 10V
500pF @ 15V
1W
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
DMN61D8LVTQ-13
Diodes Incorporated

MOSFET 2N-CH 60V 0.63A TSOT26

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 630mA
  • Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 150mA, 5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
  • Power - Max: 820mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
封装: SOT-23-6 Thin, TSOT-23-6
库存3,360
Logic Level Gate
60V
630mA
1.8 Ohm @ 150mA, 5V
2V @ 1mA
0.74nC @ 5V
12.9pF @ 12V
820mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
DMP2100UFU-13
Diodes Incorporated

MOSFET 2P-CH 20V U-DFN2030-6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.7A
  • Rds On (Max) @ Id, Vgs: 38 mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 906pF @ 10V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UFDFN Exposed Pad
  • Supplier Device Package: U-DFN2030-6
封装: 6-UFDFN Exposed Pad
库存7,248
Standard
20V
5.7A
38 mOhm @ 3.5A, 10V
1.4V @ 250µA
21.4nC @ 10V
906pF @ 10V
900mW
-55°C ~ 150°C (TJ)
Surface Mount
6-UFDFN Exposed Pad
U-DFN2030-6
DMN3032LFDB-7
Diodes Incorporated

MOSFET 2N-CH 30V 6.2A UDFN2020-6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.2A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.8A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
封装: 6-UDFN Exposed Pad
库存5,584
Standard
30V
6.2A
30 mOhm @ 5.8A, 10V
2V @ 250µA
10.6nC @ 10V
500pF @ 15V
1W
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
DMP2065UFDB-13
Diodes Incorporated

MOSFET BVDSS: 8V 24V U-DFN2020-6

  • FET Type: 2 P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 752pF @ 15V
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
封装: 6-UDFN Exposed Pad
库存4,688
Standard
-
4.5A (Ta)
50 mOhm @ 2A, 4.5V
1V @ 250µA
9.1nC @ 4.5V
752pF @ 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
DMN3035LWN-13
Diodes Incorporated

MOSFET BVDSS: 25V 30V V-DFN3020-

  • FET Type: 2 N-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.8A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 399pF @ 15V
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: V-DFN3020-8
封装: 8-PowerVDFN
库存5,072
Standard
-
5.5A (Ta)
35 mOhm @ 4.8A, 10V
2V @ 250µA
4.5nC @ 4.5V
399pF @ 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
V-DFN3020-8
DMC1229UFDB-13
Diodes Incorporated

MOSFET N/P-CH 12V U-DFN2020-6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A
  • Rds On (Max) @ Id, Vgs: 29 mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
封装: 6-UDFN Exposed Pad
库存4,080
Logic Level Gate
12V
5.6A, 3.8A
29 mOhm @ 5A, 4.5V
1V @ 250µA
19.6nC @ 8V
914pF @ 6V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
BSS8402DWQ-7
Diodes Incorporated

MOSFET N/P-CH 60V/50V

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V, 50V
  • Current - Continuous Drain (Id) @ 25°C: 115mA, 130mA
  • Rds On (Max) @ Id, Vgs: 13.5 Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: 200mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
封装: 6-TSSOP, SC-88, SOT-363
库存4,752
Logic Level Gate
60V, 50V
115mA, 130mA
13.5 Ohm @ 500mA, 10V
2.5V @ 250µA
-
50pF @ 25V
200mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
hot DMC2004LPK-7
Diodes Incorporated

MOSFET N/P-CH 20V 6-DFN

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 750mA, 600mA
  • Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
  • Power - Max: 500mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: 6-DFN1612 (1.2x1.6)
封装: 6-SMD, No Lead
库存420,000
Logic Level Gate
20V
750mA, 600mA
550 mOhm @ 540mA, 4.5V
1V @ 250µA
-
150pF @ 16V
500mW
-65°C ~ 150°C (TJ)
Surface Mount
6-SMD, No Lead
6-DFN1612 (1.2x1.6)
DMN3055LFDB-7
Diodes Incorporated

MOSFET BVDSS: 25V 30V U-DFN2020-

  • FET Type: 2 N-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 15V
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
封装: 6-UDFN Exposed Pad
库存7,872
Standard
-
5A (Ta)
40 mOhm @ 3A, 4.5V
1.5V @ 250µA
5.3nC @ 4.5V
458pF @ 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
DMG1016VQ-13
Diodes Incorporated

MOSFET N/P-CH 20V SOT563

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 870mA, 640mA
  • Rds On (Max) @ Id, Vgs: 400 mOhm @ 600mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V
  • Power - Max: 530mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
封装: SOT-563, SOT-666
库存5,952
Logic Level Gate
20V
870mA, 640mA
400 mOhm @ 600mA, 4.5V
1V @ 250µA
0.74nC @ 4.5V
60.67pF @ 16V
530mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
hot DMP2004DWK-7
Diodes Incorporated

MOSFET 2P-CH 20V 0.43A SOT-363

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 430mA
  • Rds On (Max) @ Id, Vgs: 900 mOhm @ 430mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V
  • Power - Max: 250mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
封装: 6-TSSOP, SC-88, SOT-363
库存912,780
Logic Level Gate
20V
430mA
900 mOhm @ 430mA, 4.5V
1V @ 250µA
-
175pF @ 16V
250mW
-65°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
DMC1030UFDB-13
Diodes Incorporated

MOSFET BVDSS: 8V 24V U-DFN2020-6

  • FET Type: N and P-Channel Complementary
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta), 3.9A (Ta)
  • Rds On (Max) @ Id, Vgs: 34 mOhm @ 4.6A, 4.5V, 59 mOhm @ 3.6A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 4.5V, 13nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1003pF @ 6V, 1028pF @ 6V
  • Power - Max: 1.36W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
封装: 6-UDFN Exposed Pad
库存5,632
Standard
12V
5.1A (Ta), 3.9A (Ta)
34 mOhm @ 4.6A, 4.5V, 59 mOhm @ 3.6A, 4.5V
1V @ 250µA
12.2nC @ 4.5V, 13nC @ 4.5V
1003pF @ 6V, 1028pF @ 6V
1.36W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
DMN3032LFDB-13
Diodes Incorporated

MOSFET 2N-CH 30V 6.2A UDFN2020-6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.2A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.8A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
封装: 6-UDFN Exposed Pad
库存2,176
Standard
30V
6.2A
30 mOhm @ 5.8A, 10V
2V @ 250µA
10.6nC @ 10V
500pF @ 15V
1W
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
DMN5L06VKQ-7
Diodes Incorporated

2N7002 FAMILY SOT563 T&R 3K

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: 250mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
封装: SOT-563, SOT-666
库存2,384
Logic Level Gate
50V
280mA (Ta)
2 Ohm @ 50mA, 5V
1.2V @ 250µA
-
50pF @ 25V
250mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
DMN3055LFDB-13
Diodes Incorporated

MOSFET BVDSS: 25V 30V U-DFN2020-

  • FET Type: 2 N-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 15V
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
封装: 6-UDFN Exposed Pad
库存4,960
Standard
-
5A (Ta)
40 mOhm @ 3A, 4.5V
1.5V @ 250µA
5.3nC @ 4.5V
458pF @ 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
DMC25D1UVT-13
Diodes Incorporated

MOSFET N/P-CH 25V/12V TSOT26

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 25V, 12V
  • Current - Continuous Drain (Id) @ 25°C: 500mA, 3.9A
  • Rds On (Max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 10V
  • Power - Max: 1.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
封装: SOT-23-6 Thin, TSOT-23-6
库存6,672
Standard
25V, 12V
500mA, 3.9A
4 Ohm @ 400mA, 4.5V
1.5V @ 250µA
0.9nC @ 10V
27.6pF @ 10V
1.3W
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
DMC25D0UVT-13
Diodes Incorporated

MOSFET N/P-CH 25V/30V TSOT26

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 25V, 30V
  • Current - Continuous Drain (Id) @ 25°C: 400mA, 3.2A
  • Rds On (Max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 26.2pF @ 10V
  • Power - Max: 1.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
封装: SOT-23-6 Thin, TSOT-23-6
库存2,464
Standard
25V, 30V
400mA, 3.2A
4 Ohm @ 400mA, 4.5V
1.5V @ 250µA
0.7nC @ 8V
26.2pF @ 10V
1.2W
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
DMC31D5UDJ-7
Diodes Incorporated

MOSFET N/P-CH 30V SOT963

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 220mA, 200mA
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V
  • Power - Max: 350mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SOT-963
封装: SOT-963
库存3,504
Logic Level Gate
30V
220mA, 200mA
1.5 Ohm @ 100mA, 4.5V
1V @ 250µA
0.38nC @ 4.5V
22.6pF @ 15V
350mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-963
SOT-963