页 69 - Vishay Siliconix 产品 | 深圳黑森尔电子

零件编号	制造商	描述	封装	库存
SI4425BDY-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 8.8A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 12 mOhm @ 11.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	封装: 8-SOIC (0.154", 3.90mm Width)	库存4,656
IRFR420ATRLPBF	Vishay Siliconix	MOSFET N-CH 500V 3.3A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存469,680
SQ4470EY-T1_GE3	Vishay Siliconix	MOSFET N-CH 60V 16A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3165pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 7.1W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	封装: 8-SOIC (0.154", 3.90mm Width)	库存7,248
SI7370DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 60V 9.6A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.9W (Ta) Rds On (Max) @ Id, Vgs: 11 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	封装: PowerPAK? SO-8	库存84,336
IRFR210TRLPBF	Vishay Siliconix	MOSFET N-CH 200V 2.6A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存6,912
SI8410DB-T2-E1	Vishay Siliconix	MOSFET N-CH 20V MICROFOOT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 850mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 780mW (Ta), 1.8W (Tc) Rds On (Max) @ Id, Vgs: 37 mOhm @ 1.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-Micro Foot (1x1) Package / Case: 4-UFBGA	封装: 4-UFBGA	库存28,464
IRF840PBF	Vishay Siliconix	MOSFET N-CH 500V 8A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	封装: TO-220-3	库存613,332
SI4562DY-T1-E3	Vishay Siliconix	MOSFET N/P-CH 20V 8-SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 4.5V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存706,836
SI6981DQ-T1-E3	Vishay Siliconix	MOSFET 2P-CH 20V 4.1A 8-TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.1A Rds On (Max) @ Id, Vgs: 31 mOhm @ 4.8A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 300µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 830mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存18,108
SIRB40DP-T1-GE3	Vishay Siliconix	MOSFET ARRAY 2N-CH 40V 40A SO8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 3.25 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 20V Power - Max: 46.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	封装: PowerPAK? SO-8 Dual	库存3,296
SIP21106DT-285-E3	Vishay Siliconix	IC REG LIN 2.85V 150MA TSOT23-5 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 6V Voltage - Output (Min/Fixed): 2.85V Voltage - Output (Max): - Voltage Dropout (Max): 0.22V @ 150mA Current - Output: 150mA Current - Quiescent (Iq): - Current - Supply (Max): 85µA PSRR: 75dB ~ 40dB (1kHz ~ 100kHz) Control Features: Enable Protection Features: Over Temperature, Short Circuit Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: SOT-23-5 Thin, TSOT-23-5 Supplier Device Package: TSOT-23-5	封装: SOT-23-5 Thin, TSOT-23-5	库存3,120
SI9979DS-E3	Vishay Siliconix	IC MOTOR CONTROLLER PAR 48SQFP Motor Type - Stepper: - Motor Type - AC, DC: Brushless DC (BLDC) Function: Controller - Commutation, Direction Management Output Configuration: Pre-Driver - Half Bridge (3) Interface: Parallel Technology: Power MOSFET Step Resolution: - Applications: General Purpose Current - Output: - Voltage - Supply: 14.5 V ~ 17.5 V Voltage - Load: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 48-LQFP Supplier Device Package: 48-SQFP (7x7)	封装: 48-LQFP	库存11,208
SI9979CS-E3	Vishay Siliconix	IC MOTOR CONTROLLER PAR 48SQFP Motor Type - Stepper: - Motor Type - AC, DC: Brushless DC (BLDC) Function: Controller - Commutation, Direction Management Output Configuration: Pre-Driver - Half Bridge (3) Interface: Parallel Technology: Power MOSFET Step Resolution: - Applications: General Purpose Current - Output: - Voltage - Supply: 14.5 V ~ 17.5 V Voltage - Load: - Operating Temperature: 0°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 48-LQFP Supplier Device Package: 48-SQFP (7x7)	封装: 48-LQFP	库存7,824
DG200AAK	Vishay Siliconix	IC SWITCH DUAL SPST 14CDIP Switch Circuit: SPST - NC Multiplexer/Demultiplexer Circuit: 1:1 Number of Circuits: 2 On-State Resistance (Max): 70 Ohm Channel-to-Channel Matching (ΔRon): - Voltage - Supply, Single (V+): - Voltage - Supply, Dual (V±): ±15V Switch Time (Ton, Toff) (Max): 440ns, 340ns -3db Bandwidth: - Charge Injection: -10pC Channel Capacitance (CS(off), CD(off)): 9pF, 9pF Current - Leakage (IS(off)) (Max): 2nA Crosstalk: -90dB @ 1MHz Operating Temperature: -55°C ~ 125°C (TA) Package / Case: 14-CDIP (0.300", 7.62mm) Supplier Device Package: 14-CERDIP	封装: 14-CDIP (0.300", 7.62mm)	库存4,752
DG4157DL-T1-E3	Vishay Siliconix	IC SWITCH SGL SPDT LV SC70-6 Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Circuits: 1 On-State Resistance (Max): 1.2 Ohm Channel-to-Channel Matching (ΔRon): 120 mOhm (Max) Voltage - Supply, Single (V+): 1.65 V ~ 5.5 V Voltage - Supply, Dual (V±): - Switch Time (Ton, Toff) (Max): 37ns, 23ns -3db Bandwidth: 117MHz Charge Injection: 50pC Channel Capacitance (CS(off), CD(off)): 20pF Current - Leakage (IS(off)) (Max): 2nA Crosstalk: -63dB @ 1MHz Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	封装: 6-TSSOP, SC-88, SOT-363	库存13,431,600
SIC431BED-T1-GE3	Vishay Siliconix	MICROBUCK POWERSAVE Function: Step-Down Output Configuration: Positive Topology: Buck Output Type: Adjustable Number of Outputs: 1 Voltage - Input (Min): 3V Voltage - Input (Max): 24V Voltage - Output (Min/Fixed): 0.6V Voltage - Output (Max): 20V Current - Output: 24A Frequency - Switching: 300kHz ~ 1MHz Synchronous Rectifier: Yes Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 24-PowerWFQFN Supplier Device Package: PowerPAK® MLP44-24	封装: 24-PowerWFQFN	库存28,752
SIRS4401DP-T1-GE3	Vishay Siliconix	P-CHANNEL 40 V (D-S) MOSFET POWE FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 46.8A (Ta), 198A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 588 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21850 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 7.4W (Ta), 132W (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	封装: -	库存32,529
SIHD2N80AE-GE3	Vishay Siliconix	MOSFET N-CH 800V 2.9A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 2.9Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	封装: -	Request a Quote
SIHA30N60AEL-GE3	Vishay Siliconix	MOSFET N-CH 600V 28A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2565 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 39W (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	封装: -	Request a Quote
IRFBE30PBF-BE3	Vishay Siliconix	MOSFET N-CH 800V 4.1A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	封装: -	库存8,163
SIR5112DP-T1-RE3	Vishay Siliconix	N-CHANNEL 100 V (D-S) MOSFET POW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta), 42.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 56.8W (Tc) Rds On (Max) @ Id, Vgs: 14.9mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	封装: -	库存35,934
SI1441EDH-T1-BE3	Vishay Siliconix	MOSFET P-CH 20V 4A/4A SC70-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 2.8W (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-6 Package / Case: 6-TSSOP, SC-88, SOT-363	封装: -	库存4,926
SUP75P05-08-E3	Vishay Siliconix	MOSFET P-CH 55V 75A TO220AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 250W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	封装: -	Request a Quote
IRFR9014TRPBF-BE3	Vishay Siliconix	MOSFET P-CH 60V 5.1A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 3.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	封装: -	库存4,863
SI1403BDL-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 1.5A SC70-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-6 Package / Case: 6-TSSOP, SC-88, SOT-363	封装: -	库存57,729
SIS9634LDN-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 60V 6A PPAK 1212 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 6A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 30V Power - Max: 2.5W (Ta), 17.9W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Dual Supplier Device Package: PowerPAK® 1212-8 Dual	封装: -	库存35,490
SQM100N02-3M5L_GE3	Vishay Siliconix	MOSFET N-CH 20V 100A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封装: -	Request a Quote
SIDR140DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 25V 79A/100A PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8150 pF @ 10 V Vgs (Max): +20V, -16V FET Feature: - Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 0.67mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8DC Package / Case: PowerPAK® SO-8	封装: -	Request a Quote
SQJ912AEP-T2_BE3	Vishay Siliconix	MOSFET 2N-CH 40V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 9.3mOhm @ 9.7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1835pF @ 20V Power - Max: 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	封装: -	Request a Quote
SUD50P04-08-E3	Vishay Siliconix	MOSFET P-CH 40V DPAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote

SI4425BDY-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 8.8A 8-SOIC

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 12 mOhm @ 11.4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

库存4,656

IRFR420ATRLPBF

Vishay Siliconix

MOSFET N-CH 500V 3.3A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存469,680

SQ4470EY-T1_GE3

Vishay Siliconix

MOSFET N-CH 60V 16A 8SOIC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3165pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 7.1W (Tc)
Rds On (Max) @ Id, Vgs: 12 mOhm @ 6A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

库存7,248

SI7370DP-T1-GE3

Vishay Siliconix

MOSFET N-CH 60V 9.6A PPAK SO-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 11 mOhm @ 12A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK? SO-8
Package / Case: PowerPAK? SO-8

封装: PowerPAK? SO-8

库存84,336

IRFR210TRLPBF

Vishay Siliconix

MOSFET N-CH 200V 2.6A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存6,912

SI8410DB-T2-E1

Vishay Siliconix

MOSFET N-CH 20V MICROFOOT

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs(th) (Max) @ Id: 850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 10V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
Rds On (Max) @ Id, Vgs: 37 mOhm @ 1.5A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 4-Micro Foot (1x1)
Package / Case: 4-UFBGA

封装: 4-UFBGA

库存28,464

IRF840PBF

Vishay Siliconix

MOSFET N-CH 500V 8A TO-220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封装: TO-220-3

库存613,332

SI4562DY-T1-E3

Vishay Siliconix

MOSFET N/P-CH 20V 8-SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存706,836

SI6981DQ-T1-E3

Vishay Siliconix

MOSFET 2P-CH 20V 4.1A 8-TSSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.1A
Rds On (Max) @ Id, Vgs: 31 mOhm @ 4.8A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 300µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存18,108

SIRB40DP-T1-GE3

Vishay Siliconix

MOSFET ARRAY 2N-CH 40V 40A SO8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.25 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 20V
Power - Max: 46.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

封装: PowerPAK? SO-8 Dual

库存3,296

SIP21106DT-285-E3

Vishay Siliconix

IC REG LIN 2.85V 150MA TSOT23-5

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 6V
Voltage - Output (Min/Fixed): 2.85V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.22V @ 150mA
Current - Output: 150mA
Current - Quiescent (Iq): -
Current - Supply (Max): 85µA
PSRR: 75dB ~ 40dB (1kHz ~ 100kHz)
Control Features: Enable
Protection Features: Over Temperature, Short Circuit
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Supplier Device Package: TSOT-23-5

封装: SOT-23-5 Thin, TSOT-23-5

库存3,120

SI9979DS-E3

Vishay Siliconix

IC MOTOR CONTROLLER PAR 48SQFP

Motor Type - Stepper: -
Motor Type - AC, DC: Brushless DC (BLDC)
Function: Controller - Commutation, Direction Management
Output Configuration: Pre-Driver - Half Bridge (3)
Interface: Parallel
Technology: Power MOSFET
Step Resolution: -
Applications: General Purpose
Current - Output: -
Voltage - Supply: 14.5 V ~ 17.5 V
Voltage - Load: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Supplier Device Package: 48-SQFP (7x7)

封装: 48-LQFP

库存11,208

SI9979CS-E3

Vishay Siliconix

IC MOTOR CONTROLLER PAR 48SQFP

Motor Type - Stepper: -
Motor Type - AC, DC: Brushless DC (BLDC)
Function: Controller - Commutation, Direction Management
Output Configuration: Pre-Driver - Half Bridge (3)
Interface: Parallel
Technology: Power MOSFET
Step Resolution: -
Applications: General Purpose
Current - Output: -
Voltage - Supply: 14.5 V ~ 17.5 V
Voltage - Load: -
Operating Temperature: 0°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Supplier Device Package: 48-SQFP (7x7)

封装: 48-LQFP

库存7,824

DG200AAK

Vishay Siliconix

IC SWITCH DUAL SPST 14CDIP

Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 2
On-State Resistance (Max): 70 Ohm
Channel-to-Channel Matching (ΔRon): -
Voltage - Supply, Single (V+): -
Voltage - Supply, Dual (V±): ±15V
Switch Time (Ton, Toff) (Max): 440ns, 340ns
-3db Bandwidth: -
Charge Injection: -10pC
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Current - Leakage (IS(off)) (Max): 2nA
Crosstalk: -90dB @ 1MHz
Operating Temperature: -55°C ~ 125°C (TA)
Package / Case: 14-CDIP (0.300", 7.62mm)
Supplier Device Package: 14-CERDIP

封装: 14-CDIP (0.300", 7.62mm)

库存4,752

DG4157DL-T1-E3

Vishay Siliconix

IC SWITCH SGL SPDT LV SC70-6

Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Circuits: 1
On-State Resistance (Max): 1.2 Ohm
Channel-to-Channel Matching (ΔRon): 120 mOhm (Max)
Voltage - Supply, Single (V+): 1.65 V ~ 5.5 V
Voltage - Supply, Dual (V±): -
Switch Time (Ton, Toff) (Max): 37ns, 23ns
-3db Bandwidth: 117MHz
Charge Injection: 50pC
Channel Capacitance (CS(off), CD(off)): 20pF
Current - Leakage (IS(off)) (Max): 2nA
Crosstalk: -63dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)

封装: 6-TSSOP, SC-88, SOT-363

库存13,431,600

SIC431BED-T1-GE3

Vishay Siliconix

MICROBUCK POWERSAVE

Function: Step-Down
Output Configuration: Positive
Topology: Buck
Output Type: Adjustable
Number of Outputs: 1
Voltage - Input (Min): 3V
Voltage - Input (Max): 24V
Voltage - Output (Min/Fixed): 0.6V
Voltage - Output (Max): 20V
Current - Output: 24A
Frequency - Switching: 300kHz ~ 1MHz
Synchronous Rectifier: Yes
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-PowerWFQFN
Supplier Device Package: PowerPAK® MLP44-24

封装: 24-PowerWFQFN

库存28,752

SIRS4401DP-T1-GE3

Vishay Siliconix

P-CHANNEL 40 V (D-S) MOSFET POWE

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 46.8A (Ta), 198A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 588 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21850 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 7.4W (Ta), 132W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8

封装: -

库存32,529

SIHD2N80AE-GE3

Vishay Siliconix

MOSFET N-CH 800V 2.9A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 100 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 2.9Ohm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

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SIHA30N60AEL-GE3

Vishay Siliconix

MOSFET N-CH 600V 28A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2565 pF @ 100 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 39W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220 Full Pack
Package / Case: TO-220-3 Full Pack

封装: -

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IRFBE30PBF-BE3

Vishay Siliconix

MOSFET N-CH 800V 4.1A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封装: -

库存8,163

SIR5112DP-T1-RE3

Vishay Siliconix

N-CHANNEL 100 V (D-S) MOSFET POW

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta), 42.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8

封装: -

库存35,934

SI1441EDH-T1-BE3

Vishay Siliconix

MOSFET P-CH 20V 4A/4A SC70-6

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±10V
FET Feature: -
Power Dissipation (Max): 1.6W (Ta), 2.8W (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-6
Package / Case: 6-TSSOP, SC-88, SOT-363

封装: -

库存4,926

SUP75P05-08-E3

Vishay Siliconix

MOSFET P-CH 55V 75A TO220AB

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55 V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.7W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封装: -

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IRFR9014TRPBF-BE3

Vishay Siliconix

MOSFET P-CH 60V 5.1A DPAK

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3.1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

库存4,863

SI1403BDL-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 1.5A SC70-6

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-6
Package / Case: 6-TSSOP, SC-88, SOT-363

封装: -

库存57,729

SIS9634LDN-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 60V 6A PPAK 1212

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 6A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 30V
Power - Max: 2.5W (Ta), 17.9W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Supplier Device Package: PowerPAK® 1212-8 Dual

封装: -

库存35,490

SQM100N02-3M5L_GE3

Vishay Siliconix

MOSFET N-CH 20V 100A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

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SIDR140DP-T1-GE3

Vishay Siliconix

MOSFET N-CH 25V 79A/100A PPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25 V
Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8150 pF @ 10 V
Vgs (Max): +20V, -16V
FET Feature: -
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 0.67mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8DC
Package / Case: PowerPAK® SO-8

封装: -

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SQJ912AEP-T2_BE3

Vishay Siliconix

MOSFET 2N-CH 40V 30A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1835pF @ 20V
Power - Max: 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

封装: -

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SUD50P04-08-E3

Vishay Siliconix

MOSFET P-CH 40V DPAK

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

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