页 33 - Vishay Siliconix 产品 | 深圳黑森尔电子
联系我们
SalesDept@heisener.com +86-0755-87210559 ext.802
登入/注册
BOM
购物车 0

Vishay Siliconix 产品

记录 5,544
页  33/185
图片
零件编号
制造商
描述
封装
库存
数量
hot SI4888DY-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 11A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 7 mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: 8-SOIC (0.154", 3.90mm Width)
库存866,556
hot SUM90N06-5M5P-E3
Vishay Siliconix

MOSFET N-CH 60V 90A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.75W (Ta), 272W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存17,904
IRFD9123PBF
Vishay Siliconix

MOSFET P-CH 100V 1A HEXDIP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 600 mOhm @ 600mA, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: 4-HVMDIP
  • Package / Case: 4-DIP (0.300", 7.62mm)
封装: 4-DIP (0.300", 7.62mm)
库存4,848
SUD50N06-07L-GE3
Vishay Siliconix

MOSFET N-CH 60V 96A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 144nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存7,984
hot SI5473DC-T1-E3
Vishay Siliconix

MOSFET P-CH 12V 5.9A 1206-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 27 mOhm @ 5.9A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 1206-8 ChipFET?
  • Package / Case: 8-SMD, Flat Lead
封装: 8-SMD, Flat Lead
库存16,800
hot IRFD9020
Vishay Siliconix

MOSFET P-CH 60V 1.6A 4-DIP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 280 mOhm @ 960mA, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: 4-DIP, Hexdip, HVMDIP
  • Package / Case: 4-DIP (0.300", 7.62mm)
封装: 4-DIP (0.300", 7.62mm)
库存12,924
hot SI4451DY-T1-E3
Vishay Siliconix

MOSFET P-CH 12V 10A 8-SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 800mV @ 850µA
  • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 8.25 mOhm @ 14A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: 8-SOIC (0.154", 3.90mm Width)
库存207,324
hot IRF624PBF
Vishay Siliconix

MOSFET N-CH 250V 4.4A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 2.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: TO-220-3
库存421,188
hot SIS612EDNT-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 50A SMT

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 14A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? 1212-8
  • Package / Case: PowerPAK? 1212-8
封装: PowerPAK? 1212-8
库存9,588
SIHP15N50E-GE3
Vishay Siliconix

MOSFET N-CH 500V 14.5A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1162pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 156W (Tc)
  • Rds On (Max) @ Id, Vgs: 280 mOhm @ 7.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: TO-220-3
库存5,776
SIRA02DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 50A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6150pF @ 15V
  • Vgs (Max): +20V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Ta), 71.4W (Tc)
  • Rds On (Max) @ Id, Vgs: 2 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
封装: PowerPAK? SO-8
库存5,120
hot SI4408DY-T1-E3
Vishay Siliconix

MOSFET N-CH 20V 14A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 21A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: 8-SOIC (0.154", 3.90mm Width)
库存115,524
hot IRFR420ATRPBF
Vishay Siliconix

MOSFET N-CH 500V 3.3A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存67,116
hot IRFR9310TRPBF
Vishay Siliconix

MOSFET P-CH 400V 1.8A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 7 Ohm @ 1.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存379,980
SIHG24N65EF-GE3
Vishay Siliconix

MOSFET N-CH 650V 24A TO247AC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2774pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 156 mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AC
  • Package / Case: TO-247-3
封装: TO-247-3
库存14,736
hot SUD08P06-155L-GE3
Vishay Siliconix

MOSFET P-CH 60V 8.4A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.7W (Ta), 20.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 155 mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存404,400
SI1480DH-T1-GE3
Vishay Siliconix

MOSFET N-CH 100V 2.6A SOT-363

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 2.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-6 (SOT-363)
  • Package / Case: 6-TSSOP, SC-88, SOT-363
封装: 6-TSSOP, SC-88, SOT-363
库存53,322
hot SUD45P03-09-GE3
Vishay Siliconix

MOSFET P-CH 30V 45A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 41.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.7 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存583,920
hot SI2347DS-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V 5A SOT-23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 705pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta), 1.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 42 mOhm @ 3.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封装: TO-236-3, SC-59, SOT-23-3
库存752,700
hot SI1905BDH-T1-E3
Vishay Siliconix

MOSFET 2P-CH 8V 0.63A SC70-6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: 630mA
  • Rds On (Max) @ Id, Vgs: 542 mOhm @ 580mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 4V
  • Power - Max: 357mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6 (SOT-363)
封装: 6-TSSOP, SC-88, SOT-363
库存518,040
SJM184BEC01
Vishay Siliconix

IC ANALOG SWITCH

  • Switch Circuit: -
  • Multiplexer/Demultiplexer Circuit: -
  • Number of Circuits: -
  • On-State Resistance (Max): -
  • Channel-to-Channel Matching (ΔRon): -
  • Voltage - Supply, Single (V+): -
  • Voltage - Supply, Dual (V±): -
  • Switch Time (Ton, Toff) (Max): -
  • -3db Bandwidth: -
  • Charge Injection: -
  • Channel Capacitance (CS(off), CD(off)): -
  • Current - Leakage (IS(off)) (Max): -
  • Crosstalk: -
  • Operating Temperature: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存6,960
hot DG409AK
Vishay Siliconix

IC MUX CMOS ANLG DUAL 8CH 16DIP

  • Switch Circuit: SP4T
  • Multiplexer/Demultiplexer Circuit: 4:1
  • Number of Circuits: 2
  • On-State Resistance (Max): 100 Ohm
  • Channel-to-Channel Matching (ΔRon): 15 Ohm (Max)
  • Voltage - Supply, Single (V+): 12V
  • Voltage - Supply, Dual (V±): ±5 V ~ 20 V
  • Switch Time (Ton, Toff) (Max): 150ns, 150ns
  • -3db Bandwidth: -
  • Charge Injection: 20pC
  • Channel Capacitance (CS(off), CD(off)): 3pF, 14pF
  • Current - Leakage (IS(off)) (Max): 500pA
  • Crosstalk: -
  • Operating Temperature: -55°C ~ 125°C (TA)
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-DIP
封装: 16-DIP (0.300", 7.62mm)
库存18,240
DG9431DY-T1-E3
Vishay Siliconix

IC ANALOG SWITCH SPDT LV 8SOIC

  • Switch Circuit: SPDT
  • Multiplexer/Demultiplexer Circuit: 2:1
  • Number of Circuits: 1
  • On-State Resistance (Max): 30 Ohm
  • Channel-to-Channel Matching (ΔRon): 400 mOhm
  • Voltage - Supply, Single (V+): 2.7 V ~ 5 V
  • Voltage - Supply, Dual (V±): -
  • Switch Time (Ton, Toff) (Max): 75ns, 50ns
  • -3db Bandwidth: -
  • Charge Injection: 2pC
  • Channel Capacitance (CS(off), CD(off)): 7pF
  • Current - Leakage (IS(off)) (Max): 100pA
  • Crosstalk: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封装: 8-SOIC (0.154", 3.90mm Width)
库存5,568
DG1413EN-T1-GE4
Vishay Siliconix

IC SWITCH QUAD SPST QFN 4X4 16L

  • Switch Circuit: SPST - NO/NC
  • Multiplexer/Demultiplexer Circuit: 1:1
  • Number of Circuits: 4
  • On-State Resistance (Max): 1.8 Ohm
  • Channel-to-Channel Matching (ΔRon): 80 mOhm
  • Voltage - Supply, Single (V+): 4.5 V ~ 24 V
  • Voltage - Supply, Dual (V±): ±4.5 V ~ 15 V
  • Switch Time (Ton, Toff) (Max): 150ns, 120ns
  • -3db Bandwidth: 210MHz
  • Charge Injection: -20pC
  • Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
  • Current - Leakage (IS(off)) (Max): 550pA
  • Crosstalk: -100dB @ 1MHz
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Package / Case: 16-VQFN Exposed Pad
  • Supplier Device Package: 16-QFN (4x4)
封装: 16-VQFN Exposed Pad
库存4,320
SISF20DN-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 60V 14A/52A PPAK 12

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc)
  • Rds On (Max) @ Id, Vgs: 13mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 30V
  • Power - Max: 5.2W (Ta), 69.4W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® 1212-8SCD Dual
  • Supplier Device Package: PowerPAK® 1212-8SCD Dual
封装: -
Request a Quote
SQUN700E-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 200V/40V 16A DIE

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 200V, 40V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc), 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 9.2mOhm @ 9.8A, 10V, 75mOhm @ 5A, 10V, 30mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA, 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 11nC @ 10V, 30.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1474pF @ 20V, 600pF @ 100V, 1302pF @ 100V
  • Power - Max: 50W (Tc), 48W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
SI2393DS-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V 6.1A/7.5A SOT23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 7.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 15 V
  • Vgs (Max): +16V, -20V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 22.7mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封装: -
库存41,187
SQ3585EV-T1_GE3
Vishay Siliconix

MOSFET N/P-CH 20V 3.57A 6TSOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.57A (Tc), 2.5A (Tc)
  • Rds On (Max) @ Id, Vgs: 77mOhm @ 1A, 4.5V, 166mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V, 3.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.67W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP
封装: -
库存36,216
SIHA5N80AE-GE3
Vishay Siliconix

E SERIES POWER MOSFET THIN-LEAD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 321 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 29W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.35Ohm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220 Full Pack
  • Package / Case: TO-220-3 Full Pack
封装: -
库存2,793
SQA600CEJW-T1_GE3
Vishay Siliconix

AUTOMOTIVE N-CHANNEL 80 V (D-S)

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 13.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 54.6mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerPAK®SC-70W-6
  • Package / Case: 6-PowerVDFN
封装: -
库存14,811