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Vishay Siliconix |
JFET N-CH 25V 0.3W TO-52
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 25V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 150mA @ 15V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 4V @ 3nA
- Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
- Resistance - RDS(On): -
- Power - Max: 300mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AC, TO-52-3 Metal Can
- Supplier Device Package: TO-206AC (TO-52)
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封装: TO-206AC, TO-52-3 Metal Can |
库存4,480 |
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Vishay Siliconix |
MOSFET N-CH 40V 120A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 285nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11685pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Rds On (Max) @ Id, Vgs: 17 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2Pak)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存4,032 |
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Vishay Siliconix |
MOSFET N-CH 100V 5.4A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta)
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.9A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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封装: 8-SOIC (0.154", 3.90mm Width) |
库存7,872 |
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Vishay Siliconix |
MOSFET N-CH 8V 4.53A SC70-6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 8V
- Current - Continuous Drain (Id) @ 25°C: 4.53A (Ta), 6.04A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.05nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 4V
- Vgs (Max): ±5V
- FET Feature: -
- Power Dissipation (Max): 1.56W (Ta), 2.78W (Tc)
- Rds On (Max) @ Id, Vgs: 47 mOhm @ 4A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70-6 (SOT-363)
- Package / Case: 6-TSSOP, SC-88, SOT-363
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封装: 6-TSSOP, SC-88, SOT-363 |
库存3,792 |
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Vishay Siliconix |
MOSFET N-CH 250V 23A TO-247AC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 220W (Tc)
- Rds On (Max) @ Id, Vgs: 125 mOhm @ 14A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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封装: TO-247-3 |
库存102,084 |
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Vishay Siliconix |
MOSFET P-CH 200V 4.3A TO220FP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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封装: TO-220-3 Full Pack, Isolated Tab |
库存82,752 |
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Vishay Siliconix |
MOSFET N-CH 250V 2.7A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
- Rds On (Max) @ Id, Vgs: 2 Ohm @ 1.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存12,708 |
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Vishay Siliconix |
MOSFET N-CH 400V 2A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400V
- Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 36W (Tc)
- Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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封装: TO-220-3 |
库存19,380 |
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Vishay Siliconix |
MOSFET N-CH 500V 2.4A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
- Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存4,784 |
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Vishay Siliconix |
MOSFET N-CH 60V 32A PPAK SO-8
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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封装: - |
库存3,264 |
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Vishay Siliconix |
MOSFET N-CH 60V 60A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 30V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 6 mOhm @ 20A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
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封装: PowerPAK? SO-8 |
库存12,456 |
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Vishay Siliconix |
MOSFET N-CH 100V 28A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
- Rds On (Max) @ Id, Vgs: 77 mOhm @ 17A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存10,896 |
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Vishay Siliconix |
MOSFET N-CHAN 100V TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 136W (Tc)
- Rds On (Max) @ Id, Vgs: 8.9 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存4,608 |
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Vishay Siliconix |
MOSFET N-CH 600V 25A TO247AC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2274pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 146 mOhm @ 12.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
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封装: TO-247-3 |
库存10,464 |
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Vishay Siliconix |
MOSFET P-CH 8V MICROFOOT
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 8V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±5V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 68 mOhm @ 1.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-Microfoot
- Package / Case: 4-XFBGA
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封装: 4-XFBGA |
库存58,404 |
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Vishay Siliconix |
MOSFET P-CH 40V 50A TO252
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 100W (Tc)
- Rds On (Max) @ Id, Vgs: 15 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存129,060 |
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Vishay Siliconix |
MOSFET N-CH 40V 47A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 4.2W (Ta), 36W (Tc)
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
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封装: PowerPAK? SO-8 |
库存16,104 |
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Vishay Siliconix |
IC PCMCIA INTFACE SW 8SO
- Switch Type: PCMCIA Switch
- Number of Outputs: 1
- Ratio - Input:Output: 2:1
- Output Configuration: High Side
- Output Type: -
- Interface: -
- Voltage - Load: 3.3V, 5V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 2A
- Rds On (Typ): -
- Input Type: -
- Features: Slew Rate Controlled
- Fault Protection: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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封装: 8-SOIC (0.154", 3.90mm Width) |
库存119,676 |
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Vishay Siliconix |
MOSFET
- Switch Circuit: SP4T
- Multiplexer/Demultiplexer Circuit: 4:1
- Number of Circuits: 2
- On-State Resistance (Max): 100 Ohm
- Channel-to-Channel Matching (ΔRon): 15 Ohm (Max)
- Voltage - Supply, Single (V+): -
- Voltage - Supply, Dual (V±): ±15V
- Switch Time (Ton, Toff) (Max): 150ns, 150ns
- -3db Bandwidth: -
- Charge Injection: 20pC
- Channel Capacitance (CS(off), CD(off)): 3pF, 14pF
- Current - Leakage (IS(off)) (Max): 500pA
- Crosstalk: -
- Operating Temperature: -55°C ~ 125°C (TA)
- Package / Case: 20-LCC
- Supplier Device Package: 20-LCC
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封装: 20-LCC |
库存4,832 |
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Vishay Siliconix |
IC SWITCH DUAL DPDT 16QFN
- Switch Circuit: DPDT
- Multiplexer/Demultiplexer Circuit: 2:2
- Number of Circuits: 2
- On-State Resistance (Max): 600 mOhm
- Channel-to-Channel Matching (ΔRon): 50 mOhm
- Voltage - Supply, Single (V+): 1.65 V ~ 3.6 V
- Voltage - Supply, Dual (V±): -
- Switch Time (Ton, Toff) (Max): 57ns, 45ns
- -3db Bandwidth: -
- Charge Injection: 232pC
- Channel Capacitance (CS(off), CD(off)): 102pF
- Current - Leakage (IS(off)) (Max): 1nA
- Crosstalk: -75dB @ 100kHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-VFQFN Exposed Pad
- Supplier Device Package: 16-QFN (3x3)
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封装: 16-VFQFN Exposed Pad |
库存3,504 |
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Vishay Siliconix |
IC MULTIPLEXER DUAL 4X1 16TSSOP
- Switch Circuit: SP4T
- Multiplexer/Demultiplexer Circuit: 4:1
- Number of Circuits: 2
- On-State Resistance (Max): 40 Ohm
- Channel-to-Channel Matching (ΔRon): 5 Ohm (Max)
- Voltage - Supply, Single (V+): 2.7 V ~ 12 V
- Voltage - Supply, Dual (V±): ±2.7 V ~ 6 V
- Switch Time (Ton, Toff) (Max): 35ns, 30ns
- -3db Bandwidth: -
- Charge Injection: 38pC
- Channel Capacitance (CS(off), CD(off)): 4pF, 8pF
- Current - Leakage (IS(off)) (Max): 1nA
- Crosstalk: -83dB @ 1MHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 16-TSSOP
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封装: 16-TSSOP (0.173", 4.40mm Width) |
库存2,240 |
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Vishay Siliconix |
IC ANALOG SWITCH 16SOIC
- Switch Circuit: SPST - NO
- Multiplexer/Demultiplexer Circuit: 1:1
- Number of Circuits: 4
- On-State Resistance (Max): 115 Ohm
- Channel-to-Channel Matching (ΔRon): 2.5 Ohm
- Voltage - Supply, Single (V+): 3 V ~ 12 V
- Voltage - Supply, Dual (V±): ±3 V ~ 5 V
- Switch Time (Ton, Toff) (Max): 50ns, 35ns
- -3db Bandwidth: 1GHz
- Charge Injection: 1.4pC
- Channel Capacitance (CS(off), CD(off)): 3pF, 3pF
- Current - Leakage (IS(off)) (Max): 100pA
- Crosstalk: -74dB @ 10MHz
- Operating Temperature: -40°C ~ 125°C (TA)
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
|
封装: 16-SOIC (0.154", 3.90mm Width) |
库存4,112 |
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Vishay Siliconix |
QUAD CHANNEL, HIGH FREQUENCY POW
- Output Configuration: Half Bridge
- Applications: Synchronous Buck Converters
- Interface: PWM
- Load Type: Inductive
- Technology: Power MOSFET
- Rds On (Typ): 350 mOhm LS, 550 mOhm HS
- Current - Output / Channel: 500mA
- Current - Peak Output: 2A
- Voltage - Supply: 10 V ~ 24 V
- Voltage - Load: -
- Operating Temperature: -40°C ~ 125°C (TA)
- Features: -
- Fault Protection: -
- Mounting Type: Surface Mount
- Package / Case: 32-VFQFN Exposed Pad
- Supplier Device Package: 32-QFN (5x5)
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封装: 32-VFQFN Exposed Pad |
库存2,128 |
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Vishay Siliconix |
N-CHANNEL 30 V (D-S) MOSFET POWE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
- Vgs (Max): +20V, -16V
- FET Feature: -
- Power Dissipation (Max): 3.2W (Ta), 36.8W (Tc)
- Rds On (Max) @ Id, Vgs: 6.83mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8PT
- Package / Case: 8-PowerWDFN
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封装: - |
库存17,517 |
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Vishay Siliconix |
MOSFET P-CH 30V 60A PPAK SO-8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 15 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 65.8W (Tc)
- Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
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封装: - |
库存25,824 |
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Vishay Siliconix |
MOSFET N-CH 80V 16A/55.5A PPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
- Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8S
- Package / Case: PowerPAK® 1212-8S
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封装: - |
库存32,643 |
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Vishay Siliconix |
MOSFET 2N-CH 100V 7.1A 8PWRPAIR
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 19.5A (Tc), 6.9A (Ta), 19.1A (Tc)
- Rds On (Max) @ Id, Vgs: 37.7mOhm @ 7A, 10V, 39.4mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 50V, 845pF @ 50V
- Power - Max: 4.3W (Ta), 33W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: 8-PowerPair® (3.3x3.3)
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封装: - |
库存34,020 |
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Vishay Siliconix |
MOSFET N-CH 100V 14A PPAK SO-8L
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8L
- Package / Case: PowerPAK® SO-8L
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封装: - |
库存16,617 |
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Vishay Siliconix |
MOSFET N-CH 600V 29A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1804 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 208W (Tc)
- Rds On (Max) @ Id, Vgs: 102mOhm @ 13A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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封装: - |
Request a Quote |
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Vishay Siliconix |
N-CHANNEL 600V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220 Full Pack
- Package / Case: TO-220-3 Full Pack
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封装: - |
库存2,715 |
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