页 66 - Vishay Siliconix 产品 - 晶体管 - FET，MOSFET - 单 | 深圳黑森尔电子
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Vishay Siliconix 产品 - 晶体管 - FET，MOSFET - 单

记录 4,844
页  66/162
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数量
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot IRFD9210PBF
Vishay Siliconix

MOSFET P-CH 200V 0.4A 4-DIP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 240mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: 4-DIP, Hexdip, HVMDIP
  • Package / Case: 4-DIP (0.300", 7.62mm)
封装: 4-DIP (0.300", 7.62mm)
库存71,640
MOSFET (Metal Oxide)
200V
400mA (Ta)
10V
4V @ 250µA
8.9nC @ 10V
170pF @ 25V
±20V
-
1W (Ta)
3 Ohm @ 240mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
4-DIP, Hexdip, HVMDIP
4-DIP (0.300", 7.62mm)
hot IRFR110PBF
Vishay Siliconix

MOSFET N-CH 100V 4.3A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 540 mOhm @ 2.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存6,928
MOSFET (Metal Oxide)
100V
4.3A (Tc)
10V
4V @ 250µA
8.3nC @ 10V
180pF @ 25V
±20V
-
2.5W (Ta), 25W (Tc)
540 mOhm @ 2.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot IRFR220PBF
Vishay Siliconix

MOSFET N-CH 200V 4.8A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存5,632
MOSFET (Metal Oxide)
200V
4.8A (Tc)
10V
4V @ 250µA
14nC @ 10V
260pF @ 25V
±20V
-
2.5W (Ta), 42W (Tc)
800 mOhm @ 2.9A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot SUD50N03-06AP-E3
Vishay Siliconix

MOSFET N-CH 30V 90A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 10W (Ta), 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存6,128
MOSFET (Metal Oxide)
30V
90A (Tc)
4.5V, 10V
2.4V @ 250µA
95nC @ 10V
3800pF @ 15V
±20V
-
10W (Ta), 83W (Tc)
5.7 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
SI7623DN-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 35A 1212-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5460pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? 1212-8
  • Package / Case: PowerPAK? 1212-8
封装: PowerPAK? 1212-8
库存43,560
MOSFET (Metal Oxide)
20V
35A (Tc)
2.5V, 10V
1.5V @ 250µA
180nC @ 10V
5460pF @ 10V
±12V
-
3.7W (Ta), 52W (Tc)
3.8 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8
PowerPAK? 1212-8
hot SIR492DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 12V 40A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 6V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 4.2W (Ta), 36W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 15A, 4.5V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
封装: PowerPAK? SO-8
库存37,980
MOSFET (Metal Oxide)
12V
40A (Tc)
2.5V, 4.5V
1V @ 250µA
110nC @ 8V
3720pF @ 6V
±8V
-
4.2W (Ta), 36W (Tc)
3.8 mOhm @ 15A, 4.5V
-50°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
hot SI7108DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 14A 1212-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 22A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? 1212-8
  • Package / Case: PowerPAK? 1212-8
封装: PowerPAK? 1212-8
库存1,173,216
MOSFET (Metal Oxide)
20V
14A (Ta)
4.5V, 10V
2V @ 250µA
30nC @ 4.5V
-
±16V
-
1.5W (Ta)
4.9 mOhm @ 22A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8
PowerPAK? 1212-8
SI4136DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 46A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4560pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 2 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: 8-SOIC (0.154", 3.90mm Width)
库存21,996
MOSFET (Metal Oxide)
20V
46A (Tc)
4.5V, 10V
2.2V @ 250µA
110nC @ 10V
4560pF @ 10V
±20V
-
3.5W (Ta), 7.8W (Tc)
2 mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
SIJ470DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 100V 58.8A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 58.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
封装: PowerPAK? SO-8
库存28,962
MOSFET (Metal Oxide)
100V
58.8A (Tc)
7.5V, 10V
3.5V @ 250µA
56nC @ 10V
2050pF @ 50V
±20V
-
5W (Ta), 56.8W (Tc)
9.1 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
hot SIR812DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 60A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 335nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10240pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.45 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
封装: PowerPAK? SO-8
库存51,420
MOSFET (Metal Oxide)
30V
60A (Tc)
4.5V, 10V
2.3V @ 250µA
335nC @ 10V
10240pF @ 15V
±20V
-
6.25W (Ta), 104W (Tc)
1.45 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
hot SI7892BDP-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 15A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3775pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta)
  • Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
封装: PowerPAK? SO-8
库存76,212
MOSFET (Metal Oxide)
30V
15A (Ta)
4.5V, 10V
3V @ 250µA
40nC @ 4.5V
3775pF @ 15V
±20V
-
1.8W (Ta)
4.2 mOhm @ 25A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
hot SIR164DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 50A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
封装: PowerPAK? SO-8
库存3,062,820
MOSFET (Metal Oxide)
30V
50A (Tc)
4.5V, 10V
2.5V @ 250µA
123nC @ 10V
3950pF @ 15V
±20V
-
5.2W (Ta), 69W (Tc)
2.5 mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
hot SUD23N06-31L-E3
Vishay Siliconix

MOSFET N-CH 60V TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 31 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存224,616
MOSFET (Metal Oxide)
60V
-
4.5V, 10V
3V @ 250µA
17nC @ 10V
670pF @ 25V
±20V
-
3W (Ta), 100W (Tc)
31 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
hot SI7143DP-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V 35A PPAK SO-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 4.2W (Ta), 35.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 16.1A, 10V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
封装: PowerPAK? SO-8
库存20,832
MOSFET (Metal Oxide)
30V
35A (Tc)
4.5V, 10V
2.8V @ 250µA
71nC @ 10V
2230pF @ 15V
±20V
-
4.2W (Ta), 35.7W (Tc)
10 mOhm @ 16.1A, 10V
-50°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
hot SIR416DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 40V 50A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3350pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
封装: PowerPAK? SO-8
库存11,616
MOSFET (Metal Oxide)
40V
50A (Tc)
4.5V, 10V
2.5V @ 250µA
90nC @ 10V
3350pF @ 20V
±20V
-
5.2W (Ta), 69W (Tc)
3.8 mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
SI5418DU-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 12A PPAK CHIPFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
  • Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 7.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? ChipFet Single
  • Package / Case: PowerPAK? ChipFET? Single
封装: PowerPAK? ChipFET? Single
库存29,652
MOSFET (Metal Oxide)
30V
12A (Tc)
4.5V, 10V
3V @ 250µA
30nC @ 10V
1350pF @ 15V
±20V
-
3.1W (Ta), 31W (Tc)
14.5 mOhm @ 7.7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? ChipFet Single
PowerPAK? ChipFET? Single
SISS40DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 100V 36.5A PPAK 1212

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 36.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 845pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 21 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? 1212-8S (3.3x3.3)
  • Package / Case: 8-PowerVDFN
封装: 8-PowerVDFN
库存29,826
MOSFET (Metal Oxide)
100V
36.5A (Tc)
6V, 10V
3.5V @ 250µA
24nC @ 10V
845pF @ 50V
±20V
-
3.7W (Ta), 52W (Tc)
21 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8S (3.3x3.3)
8-PowerVDFN
hot SI7405BDN-T1-GE3
Vishay Siliconix

MOSFET P-CH 12V 16A 1212-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 115nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 6V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 33W (Tc)
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 13.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? 1212-8
  • Package / Case: PowerPAK? 1212-8
封装: PowerPAK? 1212-8
库存147,324
MOSFET (Metal Oxide)
12V
16A (Tc)
1.8V, 4.5V
1V @ 250µA
115nC @ 8V
3500pF @ 6V
±8V
-
3.6W (Ta), 33W (Tc)
13 mOhm @ 13.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8
PowerPAK? 1212-8
hot SI7806ADN-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 9A 1212-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? 1212-8
  • Package / Case: PowerPAK? 1212-8
封装: PowerPAK? 1212-8
库存674,052
MOSFET (Metal Oxide)
30V
9A (Ta)
4.5V, 10V
3V @ 250µA
20nC @ 5V
-
±20V
-
1.5W (Ta)
11 mOhm @ 14A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8
PowerPAK? 1212-8
SI5410DU-T1-GE3
Vishay Siliconix

MOSFET N-CH 40V 12A PPAK CHIPFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 6.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? ChipFet Single
  • Package / Case: PowerPAK? ChipFET? Single
封装: PowerPAK? ChipFET? Single
库存46,596
MOSFET (Metal Oxide)
40V
12A (Tc)
4.5V, 10V
3V @ 250µA
32nC @ 10V
1350pF @ 20V
±20V
-
3.1W (Ta), 31W (Tc)
18 mOhm @ 6.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? ChipFet Single
PowerPAK? ChipFET? Single
SI8410DB-T2-E1
Vishay Siliconix

MOSFET N-CH 20V MICROFOOT

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 850mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 37 mOhm @ 1.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-Micro Foot (1x1)
  • Package / Case: 4-UFBGA
封装: 4-UFBGA
库存28,464
MOSFET (Metal Oxide)
20V
-
1.5V, 4.5V
850mV @ 250µA
16nC @ 8V
620pF @ 10V
±8V
-
780mW (Ta), 1.8W (Tc)
37 mOhm @ 1.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
4-Micro Foot (1x1)
4-UFBGA
SISA10DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 30A 1212-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2425pF @ 15V
  • Vgs (Max): +20V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? 1212-8
  • Package / Case: PowerPAK? 1212-8
封装: PowerPAK? 1212-8
库存29,946
MOSFET (Metal Oxide)
30V
30A (Tc)
4.5V, 10V
2.2V @ 250µA
51nC @ 10V
2425pF @ 15V
+20V, -16V
-
3.6W (Ta), 39W (Tc)
3.7 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8
PowerPAK? 1212-8
hot SI4384DY-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 10A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.47W (Ta)
  • Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: 8-SOIC (0.154", 3.90mm Width)
库存508,872
MOSFET (Metal Oxide)
30V
10A (Ta)
4.5V, 10V
3V @ 250µA
18nC @ 4.5V
-
±20V
-
1.47W (Ta)
8.5 mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot SI4102DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 100V 3.8A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta), 4.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 158 mOhm @ 2.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: 8-SOIC (0.154", 3.90mm Width)
库存179,544
MOSFET (Metal Oxide)
100V
3.8A (Tc)
6V, 10V
4V @ 250µA
11nC @ 10V
370pF @ 50V
±20V
-
2.4W (Ta), 4.8W (Tc)
158 mOhm @ 2.7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot SIS456DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 35A PPAK 1212-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? 1212-8
  • Package / Case: PowerPAK? 1212-8
封装: PowerPAK? 1212-8
库存5,728
MOSFET (Metal Oxide)
30V
35A (Tc)
4.5V, 10V
2.2V @ 250µA
55nC @ 10V
1800pF @ 15V
±20V
-
3.8W (Ta), 52W (Tc)
5.1 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8
PowerPAK? 1212-8
hot SI4436DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 60V 8A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
  • Rds On (Max) @ Id, Vgs: 36 mOhm @ 4.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: 8-SOIC (0.154", 3.90mm Width)
库存12,756
MOSFET (Metal Oxide)
60V
8A (Tc)
4.5V, 10V
2.5V @ 250µA
32nC @ 10V
1100pF @ 30V
±20V
-
2.5W (Ta), 5W (Tc)
36 mOhm @ 4.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot SIA413DJ-T1-GE3
Vishay Siliconix

MOSFET P-CH 12V 12A SC70-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 57nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
  • Rds On (Max) @ Id, Vgs: 29 mOhm @ 6.7A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SC-70-6 Single
  • Package / Case: PowerPAK? SC-70-6
封装: PowerPAK? SC-70-6
库存270,324
MOSFET (Metal Oxide)
12V
12A (Tc)
1.5V, 4.5V
1V @ 250µA
57nC @ 8V
1800pF @ 10V
±8V
-
3.5W (Ta), 19W (Tc)
29 mOhm @ 6.7A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-70-6 Single
PowerPAK? SC-70-6
hot IRFR024TRPBF
Vishay Siliconix

MOSFET N-CH 60V 14A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 8.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存84,000
MOSFET (Metal Oxide)
60V
14A (Tc)
10V
4V @ 250µA
25nC @ 10V
640pF @ 25V
±20V
-
2.5W (Ta), 42W (Tc)
100 mOhm @ 8.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot SIR484DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 20A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.9W (Ta), 29.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 17.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
封装: PowerPAK? SO-8
库存13,548
MOSFET (Metal Oxide)
20V
20A (Tc)
4.5V, 10V
2.5V @ 250µA
23nC @ 10V
830pF @ 10V
±20V
-
3.9W (Ta), 29.8W (Tc)
8.3 mOhm @ 17.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
hot SI7114ADN-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 35A PPAK 1212-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? 1212-8
  • Package / Case: PowerPAK? 1212-8
封装: PowerPAK? 1212-8
库存1,745,832
MOSFET (Metal Oxide)
30V
35A (Tc)
4.5V, 10V
2.5V @ 250µA
32nC @ 10V
1230pF @ 15V
±20V
-
3.7W (Ta), 39W (Tc)
7.5 mOhm @ 18A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8
PowerPAK? 1212-8