Vishay Siliconix 产品 - 晶体管 - FET，MOSFET - 单

SI5855CDC-T1-E3

Vishay Siliconix

MOSFET P-CH 20V 3.7A 1206-8

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 276pF @ 10V
• Vgs (Max): ±8V
• FET Feature: Schottky Diode (Isolated)
• Power Dissipation (Max): 1.3W (Ta), 2.8W (Tc)
• Rds On (Max) @ Id, Vgs: 144 mOhm @ 2.5A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 1206-8 ChipFET?
• Package / Case: 8-SMD, Flat Lead

封装: 8-SMD, Flat Lead

SI2318DS-T1-GE3

Vishay Siliconix

MOSFET N-CH 40V 3A SOT-23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 20V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 750mW (Ta)
• Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.9A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3 (TO-236)
• Package / Case: TO-236-3, SC-59, SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

SI3421DV-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 8A TSOP-6

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2580pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
• Rds On (Max) @ Id, Vgs: 19.2 mOhm @ 7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-TSOP
• Package / Case: SOT-23-6 Thin, TSOT-23-6

封装: SOT-23-6 Thin, TSOT-23-6

SI2399DS-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 6A SOT-23

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 835pF @ 10V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
• Rds On (Max) @ Id, Vgs: 34 mOhm @ 5.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3 (TO-236)
• Package / Case: TO-236-3, SC-59, SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

SI1480DH-T1-GE3

Vishay Siliconix

MOSFET N-CH 100V 2.6A SOT-363

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.5W (Ta), 2.8W (Tc)
• Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.9A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SC-70-6 (SOT-363)
• Package / Case: 6-TSSOP, SC-88, SOT-363

封装: 6-TSSOP, SC-88, SOT-363

SI2342DS-T1-GE3

Vishay Siliconix

MOSFET N-CH 8V 6A SOT-23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 8V
• Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
• Vgs(th) (Max) @ Id: 800mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15.8nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 4V
• Vgs (Max): ±5V
• FET Feature: -
• Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc)
• Rds On (Max) @ Id, Vgs: 17 mOhm @ 7.2A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23
• Package / Case: TO-236-3, SC-59, SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

SI8466EDB-T2-E1

Vishay Siliconix

MOSFET N-CH 8V 3.6A MICROFOOT

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 8V
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
• Vgs(th) (Max) @ Id: 700mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 4V
• Vgs (Max): ±5V
• FET Feature: -
• Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
• Rds On (Max) @ Id, Vgs: 43 mOhm @ 2A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 4-Microfoot
• Package / Case: 4-UFBGA, WLCSP

封装: 4-UFBGA, WLCSP

SIB456DK-T1-GE3

Vishay Siliconix

MOSFET N-CH 100V 6.3A SC75-6L

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
• Rds On (Max) @ Id, Vgs: 185 mOhm @ 1.9A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? SC-75-6L Single
• Package / Case: PowerPAK? SC-75-6L

封装: PowerPAK? SC-75-6L

SI1050X-T1-GE3

Vishay Siliconix

MOSFET N-CH 8V 1.34A SC-89-6

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 8V
• Current - Continuous Drain (Id) @ 25°C: 1.34A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 900mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 585pF @ 4V
• Vgs (Max): ±5V
• FET Feature: -
• Power Dissipation (Max): 236mW (Ta)
• Rds On (Max) @ Id, Vgs: 86 mOhm @ 1.34A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SC-89-6
• Package / Case: SOT-563, SOT-666

封装: SOT-563, SOT-666

SIA817EDJ-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 4.5A SC-70-6

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
• Vgs(th) (Max) @ Id: 1.3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
• Vgs (Max): ±12V
• FET Feature: Schottky Diode (Body)
• Power Dissipation (Max): 1.9W (Ta), 6.5W (Tc)
• Rds On (Max) @ Id, Vgs: 65 mOhm @ 3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? SC-70-6 Dual
• Package / Case: PowerPAK? SC-70-6 Dual

封装: PowerPAK? SC-70-6 Dual

SQ2318AES-T1_GE3

Vishay Siliconix

MOSFET N-CHAN 40V SOT23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 555pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3W (Tc)
• Rds On (Max) @ Id, Vgs: 31 mOhm @ 6A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3 (TO-236)
• Package / Case: TO-236-3, SC-59, SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

SIA459EDJ-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 9A SC70

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 885pF @ 10V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 2.9W (Ta), 15.6W (Tc)
• Rds On (Max) @ Id, Vgs: 35 mOhm @ 5A, 4.5V
• Operating Temperature: -50°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? SC-70-6 Single
• Package / Case: PowerPAK? SC-70-6

封装: PowerPAK? SC-70-6

SQ2315ES-T1_GE3

Vishay Siliconix

MOSFET P-CHAN 12V SOT23

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 12V
• Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 4V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 2W (Tc)
• Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3 (TO-236)
• Package / Case: TO-236-3, SC-59, SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

SIB441EDK-T1-GE3

Vishay Siliconix

MOSFET P-CH 12V 9A PPAK SC75-6L

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 12V
• Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 900mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 33nC @ 8V
• Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 6V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
• Rds On (Max) @ Id, Vgs: 25.5 mOhm @ 4A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? SC-75-6L Single
• Package / Case: PowerPAK? SC-75-6L

封装: PowerPAK? SC-75-6L

SI1422DH-T1-GE3

Vishay Siliconix

MOSFET N-CH 12V 4A SC70-6

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 12V
• Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 8V
• Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 6V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
• Rds On (Max) @ Id, Vgs: 26 mOhm @ 5.1A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SC-70-6 (SOT-363)
• Package / Case: 6-TSSOP, SC-88, SOT-363

封装: 6-TSSOP, SC-88, SOT-363

SI8808DB-T2-E1

Vishay Siliconix

MOSFET N-CH 30V MICROFOOT

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 900mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 10nC @ 8V
• Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 95 mOhm @ 1A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 4-Microfoot
• Package / Case: 4-UFBGA

封装: 4-UFBGA

SQ1421EDH-T1_GE3

Vishay Siliconix

MOSFET P-CH 60V 1.6A SC70-6

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.3W (Tc)
• Rds On (Max) @ Id, Vgs: 290 mOhm @ 2A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SC-70-6 (SOT-363)
• Package / Case: 6-TSSOP, SC-88, SOT-363

封装: 6-TSSOP, SC-88, SOT-363

SI3474DV-T1-GE3

Vishay Siliconix

MOSFET N-CH 100V 3.8A TSOP-6

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 196pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.6W (Tc)
• Rds On (Max) @ Id, Vgs: 126 mOhm @ 2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-TSOP
• Package / Case: SOT-23-6 Thin, TSOT-23-6

封装: SOT-23-6 Thin, TSOT-23-6

SI1302DL-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 600MA SC-70-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 280mW (Ta)
• Rds On (Max) @ Id, Vgs: 480 mOhm @ 600mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SC-70-3
• Package / Case: SC-70, SOT-323

封装: SC-70, SOT-323

SI8802DB-T2-E1

Vishay Siliconix

MOSFET N-CH 8V MICROFOOT

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 8V
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
• Vgs(th) (Max) @ Id: 700mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±5V
• FET Feature: -
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 54 mOhm @ 1A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 4-Microfoot
• Package / Case: 4-XFBGA

封装: 4-XFBGA

SI2333DDS-T1-GE3

Vishay Siliconix

MOSFET P-CH 12V 6A SOT23

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 12V
• Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 35nC @ 8V
• Input Capacitance (Ciss) (Max) @ Vds: 1275pF @ 6V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1.2W (Ta), 1.7W (Tc)
• Rds On (Max) @ Id, Vgs: 28 mOhm @ 5A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3 (TO-236)
• Package / Case: TO-236-3, SC-59, SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

SI1414DH-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 4A SOT-363

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
• Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 15V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
• Rds On (Max) @ Id, Vgs: 46 mOhm @ 4A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-363
• Package / Case: 6-TSSOP, SC-88, SOT-363

封装: 6-TSSOP, SC-88, SOT-363

SI1031R-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 0.14A SC-75A

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±6V
• FET Feature: -
• Power Dissipation (Max): 250mW (Ta)
• Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SC-75A
• Package / Case: SC-75A

封装: SC-75A

SI2367DS-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 3.8A SOT-23

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 23nC @ 8V
• Input Capacitance (Ciss) (Max) @ Vds: 561pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
• Rds On (Max) @ Id, Vgs: 66 mOhm @ 2.5A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3 (TO-236)
• Package / Case: TO-236-3, SC-59, SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

SI3443CDV-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 5.97A 6TSOP

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 5.97A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta), 3.2W (Tc)
• Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.7A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-TSOP
• Package / Case: SOT-23-6 Thin, TSOT-23-6

封装: SOT-23-6 Thin, TSOT-23-6

SI1330EDL-T1-E3

Vishay Siliconix

MOSFET N-CH 60V 240MA SOT323-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 280mW (Ta)
• Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 250mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SC-70-3
• Package / Case: SC-70, SOT-323

封装: SC-70, SOT-323

SI2307CDS-T1-E3

Vishay Siliconix

MOSFET P-CH 30V 3.5A SOT23-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.1W (Ta), 1.8W (Tc)
• Rds On (Max) @ Id, Vgs: 88 mOhm @ 3.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3 (TO-236)
• Package / Case: TO-236-3, SC-59, SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

SI3457CDV-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 5.1A 6-TSOP

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta), 3W (Tc)
• Rds On (Max) @ Id, Vgs: 74 mOhm @ 4.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-TSOP
• Package / Case: SOT-23-6 Thin, TSOT-23-6

封装: SOT-23-6 Thin, TSOT-23-6

SI1077X-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V SC89-6

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 31.1nC @ 8V
• Input Capacitance (Ciss) (Max) @ Vds: 965pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 330mW (Ta)
• Rds On (Max) @ Id, Vgs: 78 mOhm @ 1.8A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SC-89-6
• Package / Case: SOT-563, SOT-666

封装: SOT-563, SOT-666

SI1416EDH-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 3.9A SOT-363

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
• Vgs(th) (Max) @ Id: 1.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
• Rds On (Max) @ Id, Vgs: 58 mOhm @ 3.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-363
• Package / Case: 6-TSSOP, SC-88, SOT-363

封装: 6-TSSOP, SC-88, SOT-363