页 24 - Vishay Siliconix 产品 - 晶体管 - FET，MOSFET - 单 | 深圳黑森尔电子
联系我们
SalesDept@heisener.com +86-0755-87210559 ext.802
登入/注册
BOM
购物车 0

Vishay Siliconix 产品 - 晶体管 - FET，MOSFET - 单

记录 4,844
页  24/162
图片
零件编号
制造商
描述
封装
库存
数量
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SQJA70EP-T1_BE3
Vishay Siliconix

N-CHANNEL 100-V (D-S) 175C MOSFE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 14.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 27W (Tc)
  • Rds On (Max) @ Id, Vgs: 95mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
封装: -
Request a Quote
MOSFET (Metal Oxide)
100 V
14.7A (Tc)
10V
3.5V @ 250µA
7 nC @ 10 V
220 pF @ 25 V
±20V
-
27W (Tc)
95mOhm @ 4A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SIHB120N60E-T5-GE3
Vishay Siliconix

N-CHANNEL 600V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1562 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 179W (Tc)
  • Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封装: -
库存2,385
MOSFET (Metal Oxide)
600 V
25A (Tc)
10V
5V @ 250µA
45 nC @ 10 V
1562 pF @ 100 V
±30V
-
179W (Tc)
120mOhm @ 12A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SIHK155N60E-T1-GE3
Vishay Siliconix

E SERIES POWER MOSFET POWERPAK 1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 156W (Tc)
  • Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK®10 x 12
  • Package / Case: 8-PowerBSFN
封装: -
库存12,000
MOSFET (Metal Oxide)
600 V
19A (Tc)
10V
5V @ 250µA
36 nC @ 10 V
1514 pF @ 100 V
±30V
-
156W (Tc)
155mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK®10 x 12
8-PowerBSFN
SIHK055N60EF-T1GE3
Vishay Siliconix

E SERIES POWER MOSFET WITH FAST

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3667 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 236W (Tc)
  • Rds On (Max) @ Id, Vgs: 58mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK®10 x 12
  • Package / Case: 8-PowerBSFN
封装: -
库存6,120
MOSFET (Metal Oxide)
600 V
40A (Tc)
10V
5V @ 250µA
90 nC @ 10 V
3667 pF @ 100 V
±30V
-
236W (Tc)
58mOhm @ 16A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK®10 x 12
8-PowerBSFN
SIR108DP-T1-RE3
Vishay Siliconix

MOSFET N-CH 100V 12.4A/45A PPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Vgs(th) (Max) @ Id: 3.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
封装: -
Request a Quote
MOSFET (Metal Oxide)
100 V
12.4A (Ta), 45A (Tc)
7.5V, 10V
3.6V @ 250µA
41.5 nC @ 10 V
2060 pF @ 50 V
±20V
-
5W (Ta), 65.7W (Tc)
13.5mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SIR580DP-T1-RE3
Vishay Siliconix

N-CHANNEL 80-V (D-S) MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 35.8A (Ta), 146A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
封装: -
Request a Quote
MOSFET (Metal Oxide)
80 V
35.8A (Ta), 146A (Tc)
7.5V, 10V
4V @ 250µA
76 nC @ 10 V
4100 pF @ 40 V
±20V
-
6.25W (Ta), 104W (Tc)
2.7mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
IRF730PBF-BE3
Vishay Siliconix

MOSFET N-CH 400V 5.5A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400 V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 74W (Tc)
  • Rds On (Max) @ Id, Vgs: 1Ohm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: -
库存8,943
MOSFET (Metal Oxide)
400 V
5.5A (Tc)
10V
4V @ 250µA
38 nC @ 10 V
700 pF @ 25 V
±20V
-
74W (Tc)
1Ohm @ 3A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
SQJ423EP-T1_BE3
Vishay Siliconix

P-CHANNEL 40-V (D-S) 175C MOSFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
封装: -
Request a Quote
MOSFET (Metal Oxide)
40 V
55A (Tc)
4.5V, 10V
2.5V @ 250µA
130 nC @ 10 V
4500 pF @ 25 V
±20V
-
68W (Tc)
14mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SQD50N04-5M6_T4GE3
Vishay Siliconix

MOSFET N-CH 40V 50A TO252AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 71W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封装: -
库存126,351
MOSFET (Metal Oxide)
40 V
50A (Tc)
10V
3.5V @ 250µA
85 nC @ 10 V
4000 pF @ 25 V
±20V
-
71W (Tc)
5.6mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
SIS4604LDN-T1-GE3
Vishay Siliconix

N-CHANNEL 60 V (D-S) MOSFET POWE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 15.1A (Ta), 45.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 33.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 1212-8
  • Package / Case: PowerPAK® 1212-8
封装: -
库存44,511
MOSFET (Metal Oxide)
60 V
15.1A (Ta), 45.9A (Tc)
4.5V, 10V
3V @ 250µA
28 nC @ 10 V
1180 pF @ 30 V
±20V
-
3.6W (Ta), 33.7W (Tc)
8.9mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
SQP120N10-3M8_GE3
Vishay Siliconix

MOSFET N-CH 100V 120A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7230 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: -
Request a Quote
MOSFET (Metal Oxide)
100 V
120A (Tc)
10V
3.5V @ 250µA
190 nC @ 10 V
7230 pF @ 25 V
±20V
-
250W (Tc)
3.8mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
IRFBC20PBF-BE3
Vishay Siliconix

MOSFET N-CH 600V 2.2A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: -
库存2,925
MOSFET (Metal Oxide)
600 V
2.2A (Tc)
10V
4V @ 250µA
18 nC @ 10 V
350 pF @ 25 V
±20V
-
50W (Tc)
4.4Ohm @ 1.3A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
SQJA70EP-T1_GE3
Vishay Siliconix

MOSFET N-CH 100V 14.7A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 14.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 27W (Tc)
  • Rds On (Max) @ Id, Vgs: 95mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
封装: -
库存8,580
MOSFET (Metal Oxide)
100 V
14.7A (Tc)
10V
3.5V @ 250µA
7 nC @ 10 V
220 pF @ 25 V
±20V
-
27W (Tc)
95mOhm @ 4A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SI2342DS-T1-BE3
Vishay Siliconix

N-CHANNEL 8-V (D-S) MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 8 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Vgs(th) (Max) @ Id: 800mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 4 V
  • Vgs (Max): ±5V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 17mOhm @ 7.2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封装: -
库存7,593
MOSFET (Metal Oxide)
8 V
6A (Ta), 6A (Tc)
1.2V, 4.5V
800mV @ 250µA
15.8 nC @ 4.5 V
1070 pF @ 4 V
±5V
-
1.3W (Ta), 2.5W (Tc)
17mOhm @ 7.2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SIHFL9014TR-GE3
Vishay Siliconix

MOSFET P-CH 60V 1.8A SOT223

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
  • Rds On (Max) @ Id, Vgs: 500mOhm @ 1.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
封装: -
库存7,050
MOSFET (Metal Oxide)
60 V
1.8A (Tc)
10V
4V @ 250µA
12 nC @ 10 V
270 pF @ 25 V
±20V
-
2W (Ta), 3.1W (Tc)
500mOhm @ 1.1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
SIRS5700DP-T1-RE3
Vishay Siliconix

N-CHANNEL MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 144A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5455 pF @ 75 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 8.3W (Ta), 278W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
封装: -
Request a Quote
MOSFET (Metal Oxide)
150 V
25A (Ta), 144A (Tc)
7.5V, 10V
4V @ 250µA
110 nC @ 10 V
5455 pF @ 75 V
±20V
-
8.3W (Ta), 278W (Tc)
5.6mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
V30365-T1-GE3
Vishay Siliconix

MOSFET N-CH SMD

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SQJ431EP-T2_GE3
Vishay Siliconix

MOSFET P-CH 200V 12A PPAK SO-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 213mOhm @ 3.8A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
封装: -
Request a Quote
MOSFET (Metal Oxide)
200 V
12A (Tc)
6V, 10V
3.5V @ 250µA
106 nC @ 10 V
4355 pF @ 25 V
±20V
-
83W (Tc)
213mOhm @ 3.8A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SI3430DV-T1-BE3
Vishay Siliconix

MOSFET N-CH 100V 1.8A 6TSOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.14W (Ta)
  • Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
封装: -
库存14,529
MOSFET (Metal Oxide)
100 V
1.8A (Ta)
6V, 10V
4.2V @ 250µA
8.2 nC @ 10 V
-
±20V
-
1.14W (Ta)
170mOhm @ 2.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SOT-23-6 Thin, TSOT-23-6
IRF644PBF-BE3
Vishay Siliconix

MOSFET N-CH 250V 14A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 280mOhm @ 8.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: -
库存2,904
MOSFET (Metal Oxide)
250 V
14A (Tc)
-
4V @ 250µA
68 nC @ 10 V
1300 pF @ 25 V
±20V
-
125W (Tc)
280mOhm @ 8.4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
SIHF9540PBF
Vishay Siliconix

MOSFET P-CH 100V TO-220AB

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IRF9630PBF-BE3
Vishay Siliconix

MOSFET P-CH 200V 6.5A TO220AB

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 74W (Tc)
  • Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: -
库存5,406
MOSFET (Metal Oxide)
200 V
6.5A (Tc)
-
4V @ 250µA
29 nC @ 10 V
700 pF @ 25 V
±20V
-
74W (Tc)
800mOhm @ 3.9A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
SIHB11N80AE-GE3
Vishay Siliconix

MOSFET N-CH 800V 8A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 78W (Tc)
  • Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封装: -
库存2,988
MOSFET (Metal Oxide)
800 V
8A (Tc)
10V
4V @ 250µA
42 nC @ 10 V
804 pF @ 100 V
±30V
-
78W (Tc)
450mOhm @ 5.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SIHD3N50DT4-GE3
Vishay Siliconix

MOSFET N-CH 500V 3A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 69W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.2Ohm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封装: -
Request a Quote
MOSFET (Metal Oxide)
500 V
3A (Tc)
10V
5V @ 250µA
12 nC @ 10 V
175 pF @ 100 V
±30V
-
69W (Tc)
3.2Ohm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
SIRS4301DP-T1-GE3
Vishay Siliconix

P-CHANNEL 30 V (D-S) MOSFET POWE

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 53.7A (Ta), 227A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 19750 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 7.4W (Ta), 132W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
封装: -
库存17,160
MOSFET (Metal Oxide)
30 V
53.7A (Ta), 227A (Tc)
4.5V, 10V
2.3V @ 250µA
255 nC @ 4.5 V
19750 pF @ 15 V
±20V
-
7.4W (Ta), 132W (Tc)
1.5mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SIDR608EP-T1-RE3
Vishay Siliconix

N-CHANNEL 45 V (D-S) 175C MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 45 V
  • Current - Continuous Drain (Id) @ 25°C: 56A (Ta), 228A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 20 V
  • Vgs (Max): +20V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 7.5W (Ta), 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8DC
  • Package / Case: PowerPAK® SO-8
封装: -
Request a Quote
MOSFET (Metal Oxide)
45 V
56A (Ta), 228A (Tc)
4.5V, 10V
2.3V @ 250µA
167 nC @ 10 V
8900 pF @ 20 V
+20V, -16V
-
7.5W (Ta), 125W (Tc)
1.2mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8DC
PowerPAK® SO-8
SIHP12N50E-BE3
Vishay Siliconix

N-CHANNEL 500V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 114W (Tc)
  • Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: -
库存2,946
MOSFET (Metal Oxide)
500 V
10.5A (Tc)
10V
4V @ 250µA
50 nC @ 10 V
886 pF @ 100 V
±30V
-
114W (Tc)
380mOhm @ 6A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
SQJ412EP-T2_GE3
Vishay Siliconix

MOSFET N-CH 40V 32A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.1mOhm @ 10.3A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
封装: -
Request a Quote
MOSFET (Metal Oxide)
40 V
32A (Tc)
4.5V, 10V
2.5V @ 250µA
120 nC @ 10 V
5950 pF @ 20 V
±20V
-
83W (Tc)
4.1mOhm @ 10.3A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SQ4483BEEY-T1_GE3
Vishay Siliconix

MOSFET P-CHANNEL 30V 22A 8SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 7W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: -
库存71,379
MOSFET (Metal Oxide)
30 V
22A (Tc)
4.5V, 10V
2.5V @ 250µA
113 nC @ 10 V
-
±20V
-
7W (Tc)
8.5mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
SQ2303ES-T1_BE3
Vishay Siliconix

MOSFET P-CH 30V 2.5A SOT23-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.9W (Tc)
  • Rds On (Max) @ Id, Vgs: 170mOhm @ 1.7A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封装: -
库存28,008
MOSFET (Metal Oxide)
30 V
2.5A (Tc)
4.5V, 10V
2.5V @ 250µA
6.8 nC @ 10 V
210 pF @ 25 V
±20V
-
1.9W (Tc)
170mOhm @ 1.7A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3