页 161 - Vishay Siliconix 产品 - 晶体管 - FET,MOSFET - 单 | 深圳黑森尔电子
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Vishay Siliconix 产品 - 晶体管 - FET,MOSFET - 单

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封装
库存
数量
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
VQ1004P-2
Vishay Siliconix

MOSFET N-CH 60V 0.4A TO-205

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
库存4,736
-
-
-
5V, 10V
-
-
-
±20V
-
-
-
-
-
-
-
hot VQ1004P
Vishay Siliconix

MOSFET N-CH 60V 0.4A TO-205

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
库存19,572
-
-
-
5V, 10V
-
-
-
±20V
-
-
-
-
-
-
-
hot VP1008B
Vishay Siliconix

MOSFET P-CH 100V .79A TO-205

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 790mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 6.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 5 Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-39
  • Package / Case: TO-205AD, TO-39-3 Metal Can
封装: TO-205AD, TO-39-3 Metal Can
库存49,152
MOSFET (Metal Oxide)
100V
790mA (Ta)
10V
4.5V @ 1mA
-
150pF @ 25V
±20V
-
6.25W (Ta)
5 Ohm @ 1A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-39
TO-205AD, TO-39-3 Metal Can
VP0808B-E3
Vishay Siliconix

MOSFET P-CH 80V 0.88A TO-205

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 880mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 6.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 5 Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-39
  • Package / Case: TO-205AD, TO-39-3 Metal Can
封装: TO-205AD, TO-39-3 Metal Can
库存6,528
MOSFET (Metal Oxide)
80V
880mA (Ta)
10V
4.5V @ 1mA
-
150pF @ 25V
±20V
-
6.25W (Ta)
5 Ohm @ 1A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-39
TO-205AD, TO-39-3 Metal Can
VP0808B-2
Vishay Siliconix

MOSFET P-CH 80V 0.88A TO-205

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 880mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 6.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 5 Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-39
  • Package / Case: TO-205AD, TO-39-3 Metal Can
封装: TO-205AD, TO-39-3 Metal Can
库存3,552
MOSFET (Metal Oxide)
80V
880mA (Ta)
10V
4.5V @ 1mA
-
150pF @ 25V
±20V
-
6.25W (Ta)
5 Ohm @ 1A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-39
TO-205AD, TO-39-3 Metal Can
VP0808B
Vishay Siliconix

MOSFET P-CH 80V 0.88A TO-205

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 880mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 6.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 5 Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-39
  • Package / Case: TO-205AD, TO-39-3 Metal Can
封装: TO-205AD, TO-39-3 Metal Can
库存5,280
MOSFET (Metal Oxide)
80V
880mA (Ta)
10V
4.5V @ 1mA
-
150pF @ 25V
±20V
-
6.25W (Ta)
5 Ohm @ 1A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-39
TO-205AD, TO-39-3 Metal Can
VP0300B-E3
Vishay Siliconix

MOSFET P-CH 30V 0.32A TO-205

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 15V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 1A, 12V
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
库存4,240
MOSFET (Metal Oxide)
30V
320mA (Ta)
-
4.5V @ 1mA
-
150pF @ 15V
-
-
-
2.5 Ohm @ 1A, 12V
-
-
-
-
SUP53P06-20-GE3
Vishay Siliconix

MOSFET P-CH 60V 9.2A TO220AB

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 53A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 104.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: TO-220-3
库存5,440
MOSFET (Metal Oxide)
60V
9.2A (Ta), 53A (Tc)
4.5V, 10V
3V @ 250µA
115nC @ 10V
3500pF @ 25V
±20V
-
3.1W (Ta), 104.2W (Tc)
19.5 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
SUD50N03-06AP-T4E3
Vishay Siliconix

MOSFET N-CH 30V 90A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 10W (Ta), 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存2,624
MOSFET (Metal Oxide)
30V
90A (Tc)
4.5V, 10V
2.4V @ 250µA
95nC @ 10V
3800pF @ 15V
±20V
-
10W (Ta), 83W (Tc)
5.7 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252
TO-252-3, DPak (2 Leads + Tab), SC-63
SIS448DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 35A 1212-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1575pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? 1212-8
  • Package / Case: PowerPAK? 1212-8
封装: PowerPAK? 1212-8
库存3,968
MOSFET (Metal Oxide)
30V
35A (Tc)
4.5V, 10V
2.3V @ 250µA
38nC @ 10V
1575pF @ 15V
±20V
-
3.7W (Ta), 52W (Tc)
5.6 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8
PowerPAK? 1212-8
hot SIS334DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 20A 1212-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 11.3 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? 1212-8
  • Package / Case: PowerPAK? 1212-8
封装: PowerPAK? 1212-8
库存36,000
MOSFET (Metal Oxide)
30V
20A (Tc)
4.5V, 10V
2.4V @ 250µA
18nC @ 10V
640pF @ 15V
±20V
-
3.8W (Ta), 50W (Tc)
11.3 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8
PowerPAK? 1212-8
hot SIS330DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 35A 1212-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? 1212-8
  • Package / Case: PowerPAK? 1212-8
封装: PowerPAK? 1212-8
库存68,436
MOSFET (Metal Oxide)
30V
35A (Tc)
4.5V, 10V
2.5V @ 250µA
35nC @ 10V
1300pF @ 15V
±20V
-
3.7W (Ta), 52W (Tc)
5.6 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8
PowerPAK? 1212-8
SIR814DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 40V 60A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
封装: PowerPAK? SO-8
库存6,896
MOSFET (Metal Oxide)
40V
60A (Tc)
4.5V, 10V
2.3V @ 250µA
86nC @ 10V
3800pF @ 20V
±20V
-
6.25W (Ta), 104W (Tc)
2.1 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
SIR482DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 35A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1575pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Ta), 27.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
封装: PowerPAK? SO-8
库存6,928
MOSFET (Metal Oxide)
30V
35A (Tc)
4.5V, 10V
2.3V @ 250µA
38nC @ 10V
1575pF @ 15V
±20V
-
5W (Ta), 27.7W (Tc)
5.6 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
SIHW47N65E-GE3
Vishay Siliconix

MOSFET N-CH 650V 47A TO-247AD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 273nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5682pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 417W (Tc)
  • Rds On (Max) @ Id, Vgs: 72 mOhm @ 24A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD
  • Package / Case: TO-247-3
封装: TO-247-3
库存3,408
MOSFET (Metal Oxide)
650V
47A (Tc)
10V
4V @ 250µA
273nC @ 10V
5682pF @ 100V
±20V
-
417W (Tc)
72 mOhm @ 24A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD
TO-247-3
SIHW23N60E-GE3
Vishay Siliconix

MOSFET N-CH 600V 23A TO-247AD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2418pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 227W (Tc)
  • Rds On (Max) @ Id, Vgs: 158 mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD
  • Package / Case: TO-247-3
封装: TO-247-3
库存7,984
MOSFET (Metal Oxide)
600V
23A (Tc)
10V
4V @ 250µA
95nC @ 10V
2418pF @ 100V
±20V
-
227W (Tc)
158 mOhm @ 12A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD
TO-247-3
SIHB30N60E-E3
Vishay Siliconix

MOSFET N-CH 600V 29A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 125 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存2,464
MOSFET (Metal Oxide)
600V
29A (Tc)
10V
4V @ 250µA
130nC @ 10V
2600pF @ 100V
±30V
-
250W (Tc)
125 mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK (TO-263)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SI4752DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 25A 8-SO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: Schottky Diode (Body)
  • Power Dissipation (Max): 3W (Ta), 6.25W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: 8-SOIC (0.154", 3.90mm Width)
库存2,368
MOSFET (Metal Oxide)
30V
25A (Tc)
4.5V, 10V
2.2V @ 1mA
43nC @ 10V
1700pF @ 15V
±20V
Schottky Diode (Body)
3W (Ta), 6.25W (Tc)
5.5 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot IRFPS40N60K
Vishay Siliconix

MOSFET N-CH 600V 40A SUPER247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7970pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 570W (Tc)
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 24A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: SUPER-247 (TO-274AA)
  • Package / Case: TO-274AA
封装: TO-274AA
库存104,856
MOSFET (Metal Oxide)
600V
40A (Tc)
10V
5V @ 250µA
330nC @ 10V
7970pF @ 25V
±30V
-
570W (Tc)
130 mOhm @ 24A, 10V
-55°C ~ 150°C (TJ)
Through Hole
SUPER-247 (TO-274AA)
TO-274AA
IRFPS38N60L
Vishay Siliconix

MOSFET N-CH 600V 38A SUPER247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7990pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 540W (Tc)
  • Rds On (Max) @ Id, Vgs: 150 mOhm @ 23A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: SUPER-247 (TO-274AA)
  • Package / Case: TO-274AA
封装: TO-274AA
库存5,968
MOSFET (Metal Oxide)
600V
38A (Tc)
10V
5V @ 250µA
320nC @ 10V
7990pF @ 25V
±30V
-
540W (Tc)
150 mOhm @ 23A, 10V
-55°C ~ 150°C (TJ)
Through Hole
SUPER-247 (TO-274AA)
TO-274AA
hot IRFP26N60L
Vishay Siliconix

MOSFET N-CH 600V 26A TO-247AC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5020pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 470W (Tc)
  • Rds On (Max) @ Id, Vgs: 250 mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
封装: TO-247-3
库存7,488
MOSFET (Metal Oxide)
600V
26A (Tc)
10V
5V @ 250µA
180nC @ 10V
5020pF @ 25V
±30V
-
470W (Tc)
250 mOhm @ 16A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
hot IRFP22N60K
Vishay Siliconix

MOSFET N-CH 600V 22A TO-247AC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3570pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 370W (Tc)
  • Rds On (Max) @ Id, Vgs: 280 mOhm @ 13A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
封装: TO-247-3
库存47,268
MOSFET (Metal Oxide)
600V
22A (Tc)
10V
5V @ 250µA
150nC @ 10V
3570pF @ 25V
±30V
-
370W (Tc)
280 mOhm @ 13A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
IRFP21N60L
Vishay Siliconix

MOSFET N-CH 600V 21A TO-247AC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 330W (Tc)
  • Rds On (Max) @ Id, Vgs: 320 mOhm @ 13A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
封装: TO-247-3
库存3,504
MOSFET (Metal Oxide)
600V
21A (Tc)
10V
5V @ 250µA
150nC @ 10V
4000pF @ 25V
±30V
-
330W (Tc)
320 mOhm @ 13A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
hot IRFD9123
Vishay Siliconix

MOSFET P-CH 100V 1A 4-DIP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 600 mOhm @ 600mA, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: 4-HVMDIP
  • Package / Case: 4-DIP (0.300", 7.62mm)
封装: 4-DIP (0.300", 7.62mm)
库存9,708
MOSFET (Metal Oxide)
100V
1A (Ta)
-
4V @ 250µA
18nC @ 10V
390pF @ 25V
-
-
-
600 mOhm @ 600mA, 10V
-
Through Hole
4-HVMDIP
4-DIP (0.300", 7.62mm)
IRFD213
Vishay Siliconix

MOSFET N-CH 250V 450MA 4-DIP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 270mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: 4-DIP, Hexdip, HVMDIP
  • Package / Case: 4-DIP (0.300", 7.62mm)
封装: 4-DIP (0.300", 7.62mm)
库存3,152
MOSFET (Metal Oxide)
250V
450mA (Ta)
-
4V @ 250µA
8.2nC @ 10V
140pF @ 25V
-
-
-
2 Ohm @ 270mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
4-DIP, Hexdip, HVMDIP
4-DIP (0.300", 7.62mm)
hot IRFD113
Vishay Siliconix

MOSFET N-CH 60V 800MA 4-DIP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 800 mOhm @ 800mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: 4-HVMDIP
  • Package / Case: 4-DIP (0.300", 7.62mm)
封装: 4-DIP (0.300", 7.62mm)
库存4,400
MOSFET (Metal Oxide)
60V
800mA (Tc)
10V
4V @ 250µA
7nC @ 10V
200pF @ 25V
±20V
-
1W (Tc)
800 mOhm @ 800mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
4-HVMDIP
4-DIP (0.300", 7.62mm)
3N164
Vishay Siliconix

MOSFET P-CH 30V 50MA TO-206AF

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 5V @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 375mW (Ta)
  • Rds On (Max) @ Id, Vgs: 300 Ohm @ 100µA, 20V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-72
  • Package / Case: TO-206AF, TO-72-4 Metal Can
封装: TO-206AF, TO-72-4 Metal Can
库存2,624
MOSFET (Metal Oxide)
30V
50mA (Ta)
20V
5V @ 10µA
-
3.5pF @ 15V
±30V
-
375mW (Ta)
300 Ohm @ 100µA, 20V
-55°C ~ 150°C (TJ)
Through Hole
TO-72
TO-206AF, TO-72-4 Metal Can
3N163-E3
Vishay Siliconix

MOSFET P-CH 40V 50MA TO-72

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 5V @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 375mW (Ta)
  • Rds On (Max) @ Id, Vgs: 250 Ohm @ 100µA, 20V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-72
  • Package / Case: TO-206AF, TO-72-4 Metal Can
封装: TO-206AF, TO-72-4 Metal Can
库存3,456
MOSFET (Metal Oxide)
40V
50mA (Ta)
20V
5V @ 10µA
-
3.5pF @ 15V
±30V
-
375mW (Ta)
250 Ohm @ 100µA, 20V
-55°C ~ 150°C (TJ)
Through Hole
TO-72
TO-206AF, TO-72-4 Metal Can
3N163-2
Vishay Siliconix

MOSFET P-CH 40V 50MA TO-72

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 5V @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 375mW (Ta)
  • Rds On (Max) @ Id, Vgs: 250 Ohm @ 100µA, 20V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-72
  • Package / Case: TO-206AF, TO-72-4 Metal Can
封装: TO-206AF, TO-72-4 Metal Can
库存7,552
MOSFET (Metal Oxide)
40V
50mA (Ta)
20V
5V @ 10µA
-
3.5pF @ 15V
±30V
-
375mW (Ta)
250 Ohm @ 100µA, 20V
-55°C ~ 150°C (TJ)
Through Hole
TO-72
TO-206AF, TO-72-4 Metal Can
hot 3N163
Vishay Siliconix

MOSFET P-CH 40V 50MA TO-72

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 5V @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 375mW (Ta)
  • Rds On (Max) @ Id, Vgs: 250 Ohm @ 100µA, 20V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-72
  • Package / Case: TO-206AF, TO-72-4 Metal Can
封装: TO-206AF, TO-72-4 Metal Can
库存4,912
MOSFET (Metal Oxide)
40V
50mA (Ta)
20V
5V @ 10µA
-
3.5pF @ 15V
±30V
-
375mW (Ta)
250 Ohm @ 100µA, 20V
-55°C ~ 150°C (TJ)
Through Hole
TO-72
TO-206AF, TO-72-4 Metal Can