Vishay Semiconductor Diodes Division 产品 - 晶体管 - FET，MOSFET - 阵列

图片	零件编号	制造商	描述	封装	库存	数量	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
	19MT050XF	Vishay Semiconductor Diodes Division	MOSFET 4N-CH 500V 31A MTP FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 31A Rds On (Max) @ Id, Vgs: 220 mOhm @ 19A, 10V Vgs(th) (Max) @ Id: 6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7210pF @ 25V Power - Max: 1140W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: 16-MTP Module Supplier Device Package: 16-MTP	封装: 16-MTP Module	库存3,296		Standard	500V	31A	220 mOhm @ 19A, 10V	6V @ 250µA	160nC @ 10V	7210pF @ 25V	1140W	-40°C ~ 150°C (TJ)	Chassis Mount	16-MTP Module	16-MTP