页 6 - Toshiba Semiconductor and Storage 产品 | 深圳黑森尔电子
联系我们
SalesDept@heisener.com +86-0755-87210559 ext.802

Toshiba Semiconductor and Storage 产品

记录 4,549
页  6/152
图片
零件编号
制造商
描述
封装
库存
数量
TK4P60DB(T6RSS-Q)
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 3.7A DPAK-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 80W (Tc)
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 1.9A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存6,016
TK40S10K3Z(T6L1,NQ
Toshiba Semiconductor and Storage

MOSFET N-CH 100V 40A DPAK-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3110pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 93W (Tc)
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 20A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存5,552
TK11A60D(STA4,Q,M)
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 11A TO-220SIS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 650 mOhm @ 5.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
封装: TO-220-3 Full Pack
库存6,528
TPC6113(TE85L,F,M)
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 5A VS6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 55 mOhm @ 2.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: VS-6 (2.9x2.8)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
封装: SOT-23-6 Thin, TSOT-23-6
库存2,496
2SK2009TE85LF
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 0.2A SMINI

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 3V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 50MA, 2.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-59-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封装: TO-236-3, SC-59, SOT-23-3
库存2,352
2SA1020-O,F(J
Toshiba Semiconductor and Storage

TRANS PNP 2A 50V TO226-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
  • Power - Max: 900mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
封装: TO-226-3, TO-92-3 Long Body
库存5,184
RN4607(TE85L,F)
Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.3W SM6

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: SM6
封装: SC-74, SOT-457
库存2,096
TB7109F(TE12L,Q)
Toshiba Semiconductor and Storage

IC CONV BUCK DC/DC 0.5A 8SOP-ADV

  • Applications: Converter, LNB
  • Voltage - Input: 8 V ~ 27 V
  • Number of Outputs: 2
  • Voltage - Output: Adjustable
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: 8-SOP Advance (5x5)
封装: 8-PowerVDFN
库存5,712
TA58L09S,LS2PAIQ(J
Toshiba Semiconductor and Storage

IC REG LINEAR 250MA LSTM

  • Output Configuration: -
  • Output Type: -
  • Number of Regulators: 1
  • Voltage - Input (Max): -
  • Voltage - Output (Min/Fixed): -
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 250mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: -
  • Protection Features: -
  • Operating Temperature: -40°C ~ 105°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: LSTM
封装: TO-220-3 Full Pack
库存4,896
TCV7102F(TE12L,Q)
Toshiba Semiconductor and Storage

IC REG BUCK ADJ 3A SYNC 8SOP-ADV

  • Function: Step-Down
  • Output Configuration: Positive
  • Topology: Buck
  • Output Type: Adjustable
  • Number of Outputs: 1
  • Voltage - Input (Min): 2.7V
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 0.8V
  • Voltage - Output (Max): 5.5V
  • Current - Output: 3A
  • Frequency - Switching: 1.4MHz
  • Synchronous Rectifier: Yes
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: 8-SOP Advance (5x5)
封装: 8-PowerVDFN
库存6,512
hot TH58BVG2S3HTAI0
Toshiba Semiconductor and Storage

IC EEPROM 4GBIT 25NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM - NAND
  • Memory Size: 4Gb (512M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP I
封装: 48-TFSOP (0.724", 18.40mm Width)
库存5,232
TC74LVX174FTELM
Toshiba Semiconductor and Storage

IC D-TYPE POS TRG SNGL 16TSSOP

  • Function: Master Reset
  • Type: D-Type
  • Output Type: Non-Inverted
  • Number of Elements: 1
  • Number of Bits per Element: 6
  • Clock Frequency: 95MHz
  • Max Propagation Delay @ V, Max CL: 12.8ns @ 3.3V, 50pF
  • Trigger Type: Positive Edge
  • Current - Output High, Low: 4mA, 4mA
  • Voltage - Supply: 2 V ~ 3.6 V
  • Current - Quiescent (Iq): 4µA
  • Input Capacitance: 4pF
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-TSSOP (0.173", 4.40mm Width)
封装: 16-TSSOP (0.173", 4.40mm Width)
库存2,848
DF5A6.2F(TE85L,F)
Toshiba Semiconductor and Storage

TVS DIODE 3VWM SMV

  • Type: Zener
  • Unidirectional Channels: 4
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 3V
  • Voltage - Breakdown (Min): 5.8V
  • Voltage - Clamping (Max) @ Ipp: -
  • Current - Peak Pulse (10/1000µs): -
  • Power - Peak Pulse: -
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: 55pF @ 1MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMV
封装: SC-74A, SOT-753
库存4,050
DF2B36FU,H3F
Toshiba Semiconductor and Storage

TVS DIODE 28VWM 40VC USC

  • Type: Steering (Rail to Rail)
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 28V
  • Voltage - Breakdown (Min): 32V
  • Voltage - Clamping (Max) @ Ipp: 40V
  • Current - Peak Pulse (10/1000µs): 1A (8/20µs)
  • Power - Peak Pulse: 150W
  • Power Line Protection: No
  • Applications: Automotive
  • Capacitance @ Frequency: 6.5pF @ 1MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: USC
封装: SC-76, SOD-323
库存7,236
DF5A6.8JE,LM
Toshiba Semiconductor and Storage

TVS DIODE 5VWM SOT553

  • Type: Zener
  • Unidirectional Channels: 4
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 5V
  • Voltage - Breakdown (Min): 6.4V
  • Voltage - Clamping (Max) @ Ipp: -
  • Current - Peak Pulse (10/1000µs): -
  • Power - Peak Pulse: -
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: 45pF @ 1MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SOT-553
  • Supplier Device Package: ESV
封装: SOT-553
库存33,072
TLP626(TP1,F)
Toshiba Semiconductor and Storage

OPTOISOLATR 5KV TRANSISTOR 4-SMD

  • Number of Channels: 1
  • Voltage - Isolation: 5000Vrms
  • Current Transfer Ratio (Min): 100% @ 1mA
  • Current Transfer Ratio (Max): 1200% @ 1mA
  • Turn On / Turn Off Time (Typ): 10µs, 8µs
  • Rise / Fall Time (Typ): 8µs, 8µs
  • Input Type: AC, DC
  • Output Type: Transistor
  • Voltage - Output (Max): 55V
  • Current - Output / Channel: 50mA
  • Voltage - Forward (Vf) (Typ): 1.15V
  • Current - DC Forward (If) (Max): 60mA
  • Vce Saturation (Max): 400mV
  • Operating Temperature: -55°C ~ 100°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: 4-SMD
封装: 4-SMD, Gull Wing
库存3,526
hot TLP620(F)
Toshiba Semiconductor and Storage

OPTOISOLATR 5KV TRANSISTOR 4-DIP

  • Number of Channels: 1
  • Voltage - Isolation: 5000Vrms
  • Current Transfer Ratio (Min): 50% @ 5mA
  • Current Transfer Ratio (Max): 600% @ 5mA
  • Turn On / Turn Off Time (Typ): 3µs, 3µs
  • Rise / Fall Time (Typ): 2µs, 3µs
  • Input Type: AC, DC
  • Output Type: Transistor
  • Voltage - Output (Max): 55V
  • Current - Output / Channel: 50mA
  • Voltage - Forward (Vf) (Typ): 1.15V
  • Current - DC Forward (If) (Max): 60mA
  • Vce Saturation (Max): 400mV
  • Operating Temperature: -55°C ~ 100°C
  • Mounting Type: Through Hole
  • Package / Case: 4-DIP (0.300", 7.62mm)
  • Supplier Device Package: 4-DIP
封装: 4-DIP (0.300", 7.62mm)
库存2,000
TC78B015AFTG,EL
Toshiba Semiconductor and Storage

BRUSHLESS MOTOR DRIVER IC FOR 1

  • Motor Type - Stepper: -
  • Motor Type - AC, DC: -
  • Function: -
  • Output Configuration: -
  • Interface: -
  • Technology: -
  • Step Resolution: -
  • Applications: -
  • Current - Output: -
  • Voltage - Supply: -
  • Voltage - Load: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 36-WFQFN Exposed Pad
  • Supplier Device Package: 36-WQFN (5x5)
封装: 36-WFQFN Exposed Pad
库存37,422
TC7SB67CFU,LF(CT
Toshiba Semiconductor and Storage

IC SWITCH SPST SINGLE USV

  • Switch Circuit: SPST - NO
  • Multiplexer/Demultiplexer Circuit: 1:1
  • Number of Circuits: 1
  • On-State Resistance (Max): 12Ohm
  • Channel-to-Channel Matching (ΔRon): -
  • Voltage - Supply, Single (V+): 1.65V ~ 5.5V
  • Voltage - Supply, Dual (V±): -
  • Switch Time (Ton, Toff) (Max): 4ns, 4.5ns
  • -3db Bandwidth: -
  • Charge Injection: -
  • Channel Capacitance (CS(off), CD(off)): 5pF
  • Current - Leakage (IS(off)) (Max): 1µA
  • Crosstalk: -
  • Operating Temperature: -40°C ~ 85°C
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package: USV
封装: 5-TSSOP, SC-70-5, SOT-353
库存29,874
TC78B041FNG,EL
Toshiba Semiconductor and Storage

3 PHASE BLDC CONTROLLER

  • Motor Type - Stepper: Multiphase
  • Motor Type - AC, DC: Brushless DC (BLDC)
  • Function: Controller - Speed
  • Output Configuration: High Side, Low Side
  • Interface: PWM
  • Technology: -
  • Step Resolution: -
  • Applications: Fan Controller
  • Current - Output: 2mA
  • Voltage - Supply: 6V ~ 16.5V
  • Voltage - Load: 4.5V ~ 5.3V
  • Operating Temperature: -40°C ~ 115°C
  • Mounting Type: Surface Mount
  • Package / Case: 30-LSSOP (0.220", 5.60mm Width)
  • Supplier Device Package: 30-SSOP
封装: 30-LSSOP (0.220", 5.60mm Width)
库存3,472
TCKE805NA-RF
Toshiba Semiconductor and Storage

IC ELECTRONIC FUSE 10WSON

  • Function: Electronic Fuse
  • Sensing Method: -
  • Accuracy: -
  • Voltage - Input: 4.4V ~ 18V
  • Current - Output: 5A
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 10-WFDFN Exposed Pad
  • Supplier Device Package: 10-WSONB (3x3)
封装: -
库存99,165
RN1115-LXHF-CT
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SSM

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 2.2 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250 MHz
  • Power - Max: 100 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
封装: -
库存18,000
TC74AC540FT-EL
Toshiba Semiconductor and Storage

IC BUFFER INVERT 5.5V 20TSSOP

  • Logic Type: Buffer, Inverting
  • Number of Elements: 1
  • Number of Bits per Element: 8
  • Input Type: -
  • Output Type: 3-State
  • Current - Output High, Low: 24mA, 24mA
  • Voltage - Supply: 2V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 20-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 20-TSSOP
封装: -
库存6,000
RN2112MFV-L3F
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A VESM

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 22 kOhms
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: -
  • Power - Max: 150 mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: VESM
封装: -
Request a Quote
CRS15I30A-TE85L-QM
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1.5A S-FLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 460 mV @ 1.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 60 µA @ 30 V
  • Capacitance @ Vr, F: 50pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: S-FLAT (1.6x3.5)
  • Operating Temperature - Junction: 150°C (Max)
封装: -
库存8,940
SSM3J15CT-L3F
Toshiba Semiconductor and Storage

SMALL LOW RON PCH MOSFETS VDSS:-

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Vgs(th) (Max) @ Id: 1.7V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 100mW (Ta)
  • Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: CST3
  • Package / Case: SC-101, SOT-883
封装: -
Request a Quote
TRS10V65H-LQ
Toshiba Semiconductor and Storage

G3 SIC-SBD 650V 10A DFN8X8

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 650 V
  • Capacitance @ Vr, F: 649pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 4-VSFN Exposed Pad
  • Supplier Device Package: 4-DFN-EP (8x8)
  • Operating Temperature - Junction: 175°C
封装: -
库存14,625
RN2417-LXHF
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V SMINI

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 10 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200 MHz
  • Power - Max: 200 mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
封装: -
库存18,000
RN1104MFV-L3XHF-CT
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A VESM

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 47 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 150 mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: VESM
封装: -
库存48,000
RN2907-LXHF-CT
Toshiba Semiconductor and Storage

AUTO AEC-Q TR PNPX2 BRT, Q1BSR=1

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
封装: -
库存18,000