页 6 - Toshiba Semiconductor and Storage 产品

零件编号	制造商	描述	封装	库存
TK4P60DB(T6RSS-Q)	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 3.7A DPAK-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 1.9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存6,016
TK40S10K3Z(T6L1,NQ	Toshiba Semiconductor and Storage	MOSFET N-CH 100V 40A DPAK-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3110pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 93W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 20A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK+ Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存5,552
TK11A60D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 11A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 650 mOhm @ 5.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	封装: TO-220-3 Full Pack	库存6,528
TPC6113(TE85L,F,M)	Toshiba Semiconductor and Storage	MOSFET P-CH 20V 5A VS6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 55 mOhm @ 2.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: VS-6 (2.9x2.8) Package / Case: SOT-23-6 Thin, TSOT-23-6	封装: SOT-23-6 Thin, TSOT-23-6	库存2,496
2SK2009TE85LF	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 0.2A SMINI FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 3V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 2 Ohm @ 50MA, 2.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-59-3 Package / Case: TO-236-3, SC-59, SOT-23-3	封装: TO-236-3, SC-59, SOT-23-3	库存2,352
2SA1020-O,F(J	Toshiba Semiconductor and Storage	TRANS PNP 2A 50V TO226-3 Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	封装: TO-226-3, TO-92-3 Long Body	库存5,184
RN4607(TE85L,F)	Toshiba Semiconductor and Storage	TRANS NPN/PNP PREBIAS 0.3W SM6 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	封装: SC-74, SOT-457	库存2,096
TB7109F(TE12L,Q)	Toshiba Semiconductor and Storage	IC CONV BUCK DC/DC 0.5A 8SOP-ADV Applications: Converter, LNB Voltage - Input: 8 V ~ 27 V Number of Outputs: 2 Voltage - Output: Adjustable Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-SOP Advance (5x5)	封装: 8-PowerVDFN	库存5,712
TA58L09S,LS2PAIQ(J	Toshiba Semiconductor and Storage	IC REG LINEAR 250MA LSTM Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 250mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -40°C ~ 105°C Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: LSTM	封装: TO-220-3 Full Pack	库存4,896
TCV7102F(TE12L,Q)	Toshiba Semiconductor and Storage	IC REG BUCK ADJ 3A SYNC 8SOP-ADV Function: Step-Down Output Configuration: Positive Topology: Buck Output Type: Adjustable Number of Outputs: 1 Voltage - Input (Min): 2.7V Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 0.8V Voltage - Output (Max): 5.5V Current - Output: 3A Frequency - Switching: 1.4MHz Synchronous Rectifier: Yes Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-SOP Advance (5x5)	封装: 8-PowerVDFN	库存6,512
TH58BVG2S3HTAI0	Toshiba Semiconductor and Storage	IC EEPROM 4GBIT 25NS 48TSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM - NAND Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	封装: 48-TFSOP (0.724", 18.40mm Width)	库存5,232
TC74LVX174FTELM	Toshiba Semiconductor and Storage	IC D-TYPE POS TRG SNGL 16TSSOP Function: Master Reset Type: D-Type Output Type: Non-Inverted Number of Elements: 1 Number of Bits per Element: 6 Clock Frequency: 95MHz Max Propagation Delay @ V, Max CL: 12.8ns @ 3.3V, 50pF Trigger Type: Positive Edge Current - Output High, Low: 4mA, 4mA Voltage - Supply: 2 V ~ 3.6 V Current - Quiescent (Iq): 4µA Input Capacitance: 4pF Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width)	封装: 16-TSSOP (0.173", 4.40mm Width)	库存2,848
DF5A6.2F(TE85L,F)	Toshiba Semiconductor and Storage	TVS DIODE 3VWM SMV Type: Zener Unidirectional Channels: 4 Bidirectional Channels: - Voltage - Reverse Standoff (Typ): 3V Voltage - Breakdown (Min): 5.8V Voltage - Clamping (Max) @ Ipp: - Current - Peak Pulse (10/1000µs): - Power - Peak Pulse: - Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 55pF @ 1MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	封装: SC-74A, SOT-753	库存4,050
DF2B36FU,H3F	Toshiba Semiconductor and Storage	TVS DIODE 28VWM 40VC USC Type: Steering (Rail to Rail) Unidirectional Channels: 1 Bidirectional Channels: - Voltage - Reverse Standoff (Typ): 28V Voltage - Breakdown (Min): 32V Voltage - Clamping (Max) @ Ipp: 40V Current - Peak Pulse (10/1000µs): 1A (8/20µs) Power - Peak Pulse: 150W Power Line Protection: No Applications: Automotive Capacitance @ Frequency: 6.5pF @ 1MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: USC	封装: SC-76, SOD-323	库存7,236
DF5A6.8JE,LM	Toshiba Semiconductor and Storage	TVS DIODE 5VWM SOT553 Type: Zener Unidirectional Channels: 4 Bidirectional Channels: - Voltage - Reverse Standoff (Typ): 5V Voltage - Breakdown (Min): 6.4V Voltage - Clamping (Max) @ Ipp: - Current - Peak Pulse (10/1000µs): - Power - Peak Pulse: - Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 45pF @ 1MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: ESV	封装: SOT-553	库存33,072
TLP626(TP1,F)	Toshiba Semiconductor and Storage	OPTOISOLATR 5KV TRANSISTOR 4-SMD Number of Channels: 1 Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 1mA Current Transfer Ratio (Max): 1200% @ 1mA Turn On / Turn Off Time (Typ): 10µs, 8µs Rise / Fall Time (Typ): 8µs, 8µs Input Type: AC, DC Output Type: Transistor Voltage - Output (Max): 55V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 60mA Vce Saturation (Max): 400mV Operating Temperature: -55°C ~ 100°C Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: 4-SMD	封装: 4-SMD, Gull Wing	库存3,526
TLP620(F)	Toshiba Semiconductor and Storage	OPTOISOLATR 5KV TRANSISTOR 4-DIP Number of Channels: 1 Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Input Type: AC, DC Output Type: Transistor Voltage - Output (Max): 55V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 60mA Vce Saturation (Max): 400mV Operating Temperature: -55°C ~ 100°C Mounting Type: Through Hole Package / Case: 4-DIP (0.300", 7.62mm) Supplier Device Package: 4-DIP	封装: 4-DIP (0.300", 7.62mm)	库存2,000
TC78B015AFTG,EL	Toshiba Semiconductor and Storage	BRUSHLESS MOTOR DRIVER IC FOR 1 Motor Type - Stepper: - Motor Type - AC, DC: - Function: - Output Configuration: - Interface: - Technology: - Step Resolution: - Applications: - Current - Output: - Voltage - Supply: - Voltage - Load: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 36-WFQFN Exposed Pad Supplier Device Package: 36-WQFN (5x5)	封装: 36-WFQFN Exposed Pad	库存37,422
TC7SB67CFU,LF(CT	Toshiba Semiconductor and Storage	IC SWITCH SPST SINGLE USV Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Number of Circuits: 1 On-State Resistance (Max): 12Ohm Channel-to-Channel Matching (ΔRon): - Voltage - Supply, Single (V+): 1.65V ~ 5.5V Voltage - Supply, Dual (V±): - Switch Time (Ton, Toff) (Max): 4ns, 4.5ns -3db Bandwidth: - Charge Injection: - Channel Capacitance (CS(off), CD(off)): 5pF Current - Leakage (IS(off)) (Max): 1µA Crosstalk: - Operating Temperature: -40°C ~ 85°C Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: USV	封装: 5-TSSOP, SC-70-5, SOT-353	库存29,874
TC78B041FNG,EL	Toshiba Semiconductor and Storage	3 PHASE BLDC CONTROLLER Motor Type - Stepper: Multiphase Motor Type - AC, DC: Brushless DC (BLDC) Function: Controller - Speed Output Configuration: High Side, Low Side Interface: PWM Technology: - Step Resolution: - Applications: Fan Controller Current - Output: 2mA Voltage - Supply: 6V ~ 16.5V Voltage - Load: 4.5V ~ 5.3V Operating Temperature: -40°C ~ 115°C Mounting Type: Surface Mount Package / Case: 30-LSSOP (0.220", 5.60mm Width) Supplier Device Package: 30-SSOP	封装: 30-LSSOP (0.220", 5.60mm Width)	库存3,472
TCKE805NA-RF	Toshiba Semiconductor and Storage	IC ELECTRONIC FUSE 10WSON Function: Electronic Fuse Sensing Method: - Accuracy: - Voltage - Input: 4.4V ~ 18V Current - Output: 5A Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 10-WFDFN Exposed Pad Supplier Device Package: 10-WSONB (3x3)	封装: -	库存99,165
RN1115-LXHF-CT	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V 0.1A SSM Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 2.2 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	封装: -	库存18,000
TC74AC540FT-EL	Toshiba Semiconductor and Storage	IC BUFFER INVERT 5.5V 20TSSOP Logic Type: Buffer, Inverting Number of Elements: 1 Number of Bits per Element: 8 Input Type: - Output Type: 3-State Current - Output High, Low: 24mA, 24mA Voltage - Supply: 2V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 20-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 20-TSSOP	封装: -	库存6,000
RN2112MFV-L3F	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A VESM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 22 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: - Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	封装: -	Request a Quote
CRS15I30A-TE85L-QM	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1.5A S-FLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 460 mV @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 60 µA @ 30 V Capacitance @ Vr, F: 50pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: 150°C (Max)	封装: -	库存8,940
SSM3J15CT-L3F	Toshiba Semiconductor and Storage	SMALL LOW RON PCH MOSFETS VDSS:- FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs(th) (Max) @ Id: 1.7V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100mW (Ta) Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: CST3 Package / Case: SC-101, SOT-883	封装: -	Request a Quote
TRS10V65H-LQ	Toshiba Semiconductor and Storage	G3 SIC-SBD 650V 10A DFN8X8 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 100 µA @ 650 V Capacitance @ Vr, F: 649pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 4-VSFN Exposed Pad Supplier Device Package: 4-DFN-EP (8x8) Operating Temperature - Junction: 175°C	封装: -	库存14,625
RN2417-LXHF	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V SMINI Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 10 kOhms Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	封装: -	库存18,000
RN1104MFV-L3XHF-CT	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V 0.1A VESM Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 47 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	封装: -	库存48,000
RN2907-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q TR PNPX2 BRT, Q1BSR=1 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封装: -	库存18,000

TK4P60DB(T6RSS-Q)

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 3.7A DPAK-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 2 Ohm @ 1.9A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存6,016

TK40S10K3Z(T6L1,NQ

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 40A DPAK-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3110pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 93W (Tc)
Rds On (Max) @ Id, Vgs: 18 mOhm @ 20A, 10V
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK+
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存5,552

TK11A60D(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 11A TO-220SIS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 650 mOhm @ 5.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

库存6,528

TPC6113(TE85L,F,M)

Toshiba Semiconductor and Storage

MOSFET P-CH 20V 5A VS6

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 10V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 55 mOhm @ 2.5A, 4.5V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: VS-6 (2.9x2.8)
Package / Case: SOT-23-6 Thin, TSOT-23-6

封装: SOT-23-6 Thin, TSOT-23-6

库存2,496

2SK2009TE85LF

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 0.2A SMINI

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 3V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 2 Ohm @ 50MA, 2.5V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-59-3
Package / Case: TO-236-3, SC-59, SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

库存2,352

2SA1020-O,F(J

Toshiba Semiconductor and Storage

TRANS PNP 2A 50V TO226-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

封装: TO-226-3, TO-92-3 Long Body

库存5,184

RN4607(TE85L,F)

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.3W SM6

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: SM6

封装: SC-74, SOT-457

库存2,096

TB7109F(TE12L,Q)

Toshiba Semiconductor and Storage

IC CONV BUCK DC/DC 0.5A 8SOP-ADV

Applications: Converter, LNB
Voltage - Input: 8 V ~ 27 V
Number of Outputs: 2
Voltage - Output: Adjustable
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-SOP Advance (5x5)

封装: 8-PowerVDFN

库存5,712

TA58L09S,LS2PAIQ(J

Toshiba Semiconductor and Storage

IC REG LINEAR 250MA LSTM

Output Configuration: -
Output Type: -
Number of Regulators: 1
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 250mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -40°C ~ 105°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: LSTM

封装: TO-220-3 Full Pack

库存4,896

TCV7102F(TE12L,Q)

Toshiba Semiconductor and Storage

IC REG BUCK ADJ 3A SYNC 8SOP-ADV

Function: Step-Down
Output Configuration: Positive
Topology: Buck
Output Type: Adjustable
Number of Outputs: 1
Voltage - Input (Min): 2.7V
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 0.8V
Voltage - Output (Max): 5.5V
Current - Output: 3A
Frequency - Switching: 1.4MHz
Synchronous Rectifier: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-SOP Advance (5x5)

封装: 8-PowerVDFN

库存6,512

TH58BVG2S3HTAI0

Toshiba Semiconductor and Storage

IC EEPROM 4GBIT 25NS 48TSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM - NAND
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

封装: 48-TFSOP (0.724", 18.40mm Width)

库存5,232

TC74LVX174FTELM

Toshiba Semiconductor and Storage

IC D-TYPE POS TRG SNGL 16TSSOP

Function: Master Reset
Type: D-Type
Output Type: Non-Inverted
Number of Elements: 1
Number of Bits per Element: 6
Clock Frequency: 95MHz
Max Propagation Delay @ V, Max CL: 12.8ns @ 3.3V, 50pF
Trigger Type: Positive Edge
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 2 V ~ 3.6 V
Current - Quiescent (Iq): 4µA
Input Capacitance: 4pF
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)

封装: 16-TSSOP (0.173", 4.40mm Width)

库存2,848

DF5A6.2F(TE85L,F)

Toshiba Semiconductor and Storage

TVS DIODE 3VWM SMV

Type: Zener
Unidirectional Channels: 4
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 3V
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: -
Current - Peak Pulse (10/1000µs): -
Power - Peak Pulse: -
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMV

封装: SC-74A, SOT-753

库存4,050

DF2B36FU,H3F

Toshiba Semiconductor and Storage

TVS DIODE 28VWM 40VC USC

Type: Steering (Rail to Rail)
Unidirectional Channels: 1
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 28V
Voltage - Breakdown (Min): 32V
Voltage - Clamping (Max) @ Ipp: 40V
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Power - Peak Pulse: 150W
Power Line Protection: No
Applications: Automotive
Capacitance @ Frequency: 6.5pF @ 1MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: USC

封装: SC-76, SOD-323

库存7,236

DF5A6.8JE,LM

Toshiba Semiconductor and Storage

TVS DIODE 5VWM SOT553

Type: Zener
Unidirectional Channels: 4
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 5V
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: -
Current - Peak Pulse (10/1000µs): -
Power - Peak Pulse: -
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SOT-553
Supplier Device Package: ESV

封装: SOT-553

库存33,072

TLP626(TP1,F)

Toshiba Semiconductor and Storage

OPTOISOLATR 5KV TRANSISTOR 4-SMD

Number of Channels: 1
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 1mA
Current Transfer Ratio (Max): 1200% @ 1mA
Turn On / Turn Off Time (Typ): 10µs, 8µs
Rise / Fall Time (Typ): 8µs, 8µs
Input Type: AC, DC
Output Type: Transistor
Voltage - Output (Max): 55V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.15V
Current - DC Forward (If) (Max): 60mA
Vce Saturation (Max): 400mV
Operating Temperature: -55°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Supplier Device Package: 4-SMD

封装: 4-SMD, Gull Wing

库存3,526

TLP620(F)

Toshiba Semiconductor and Storage

OPTOISOLATR 5KV TRANSISTOR 4-DIP

Number of Channels: 1
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Current Transfer Ratio (Max): 600% @ 5mA
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Input Type: AC, DC
Output Type: Transistor
Voltage - Output (Max): 55V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.15V
Current - DC Forward (If) (Max): 60mA
Vce Saturation (Max): 400mV
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Supplier Device Package: 4-DIP

封装: 4-DIP (0.300", 7.62mm)

库存2,000

TC78B015AFTG,EL

Toshiba Semiconductor and Storage

BRUSHLESS MOTOR DRIVER IC FOR 1

Motor Type - Stepper: -
Motor Type - AC, DC: -
Function: -
Output Configuration: -
Interface: -
Technology: -
Step Resolution: -
Applications: -
Current - Output: -
Voltage - Supply: -
Voltage - Load: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 36-WFQFN Exposed Pad
Supplier Device Package: 36-WQFN (5x5)

封装: 36-WFQFN Exposed Pad

库存37,422

TC7SB67CFU,LF(CT

Toshiba Semiconductor and Storage

IC SWITCH SPST SINGLE USV

Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 1
On-State Resistance (Max): 12Ohm
Channel-to-Channel Matching (ΔRon): -
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Voltage - Supply, Dual (V±): -
Switch Time (Ton, Toff) (Max): 4ns, 4.5ns
-3db Bandwidth: -
Charge Injection: -
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 1µA
Crosstalk: -
Operating Temperature: -40°C ~ 85°C
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: USV

封装: 5-TSSOP, SC-70-5, SOT-353

库存29,874

TC78B041FNG,EL

Toshiba Semiconductor and Storage

3 PHASE BLDC CONTROLLER

Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Function: Controller - Speed
Output Configuration: High Side, Low Side
Interface: PWM
Technology: -
Step Resolution: -
Applications: Fan Controller
Current - Output: 2mA
Voltage - Supply: 6V ~ 16.5V
Voltage - Load: 4.5V ~ 5.3V
Operating Temperature: -40°C ~ 115°C
Mounting Type: Surface Mount
Package / Case: 30-LSSOP (0.220", 5.60mm Width)
Supplier Device Package: 30-SSOP

封装: 30-LSSOP (0.220", 5.60mm Width)

库存3,472

TCKE805NA-RF

Toshiba Semiconductor and Storage

IC ELECTRONIC FUSE 10WSON

Function: Electronic Fuse
Sensing Method: -
Accuracy: -
Voltage - Input: 4.4V ~ 18V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-WFDFN Exposed Pad
Supplier Device Package: 10-WSONB (3x3)

封装: -

库存99,165

RN1115-LXHF-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SSM

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 2.2 kOhms
Resistor - Emitter Base (R2) (Ohms): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

封装: -

库存18,000

TC74AC540FT-EL

Toshiba Semiconductor and Storage

IC BUFFER INVERT 5.5V 20TSSOP

Logic Type: Buffer, Inverting
Number of Elements: 1
Number of Bits per Element: 8
Input Type: -
Output Type: 3-State
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 20-TSSOP

封装: -

库存6,000

RN2112MFV-L3F

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A VESM

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 22 kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: -
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VESM

封装: -

Request a Quote

CRS15I30A-TE85L-QM

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1.5A S-FLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 1.5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 60 µA @ 30 V
Capacitance @ Vr, F: 50pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)

封装: -

库存8,940

SSM3J15CT-L3F

Toshiba Semiconductor and Storage

SMALL LOW RON PCH MOSFETS VDSS:-

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 100mW (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: CST3
Package / Case: SC-101, SOT-883

封装: -

Request a Quote

TRS10V65H-LQ

Toshiba Semiconductor and Storage

G3 SIC-SBD 650V 10A DFN8X8

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Capacitance @ Vr, F: 649pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: 4-VSFN Exposed Pad
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C

封装: -

库存14,625

RN2417-LXHF

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V SMINI

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 10 kOhms
Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

封装: -

库存18,000

RN1104MFV-L3XHF-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A VESM

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 47 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VESM

封装: -

库存48,000

RN2907-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q TR PNPX2 BRT, Q1BSR=1

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

封装: -

库存18,000