页 130 - Toshiba Semiconductor and Storage 产品

零件编号	制造商	描述	封装	库存
2SJ438(CANO,Q,M)	Toshiba Semiconductor and Storage	MOSFET P-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220NIS Package / Case: TO-220-3 Full Pack	封装: TO-220-3 Full Pack	库存3,680
TK4P55D(T6RSS-Q)	Toshiba Semiconductor and Storage	MOSFET N-CH 550V 4A DPAK-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 1.88 Ohm @ 2A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存48,000
TPC8031-H(TE12LQM)	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 11A SOP8 2-6J1B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 10V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 13.3 mOhm @ 5.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP (5.5x6.0) Package / Case: 8-SOIC (0.173", 4.40mm Width)	封装: 8-SOIC (0.173", 4.40mm Width)	库存7,392
TK6A55DA(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 550V 5.5A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 1.48 Ohm @ 2.8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	封装: TO-220-3 Full Pack	库存4,688
TPH2R608NH,L1Q	Toshiba Semiconductor and Storage	MOSFET N-CH 75V 150A SOP8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 37.5V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 142W (Tc) Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 50A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	封装: 8-PowerVDFN	库存2,384
2SD2129,LS4ALPSQ(M	Toshiba Semiconductor and Storage	TRANS NPN 3A 100V TO220-3 Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1.5A, 3V Power - Max: 2W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	封装: TO-220-3 Full Pack	库存3,840
2SA1020-Y(T6TR1,AF	Toshiba Semiconductor and Storage	TRANS PNP 2A 50V TO226-3 Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	封装: TO-226-3, TO-92-3 Long Body	库存3,616
2SA1020-Y(ND1,AF)	Toshiba Semiconductor and Storage	TRANS PNP 2A 50V TO226-3 Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	封装: TO-226-3, TO-92-3 Long Body	库存5,056
2SC6026CTGRTPL3	Toshiba Semiconductor and Storage	TRANS NPN 50V 0.1A CST3 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 60MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	封装: SC-101, SOT-883	库存6,480
2SA1312GRTE85LF	Toshiba Semiconductor and Storage	TRANS PNP 120V 0.1A S-MINI Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 150mW Frequency - Transition: 100MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	封装: TO-236-3, SC-59, SOT-23-3	库存84,378
RN1911FETE85LF	Toshiba Semiconductor and Storage	TRANS 2NPN PREBIAS 0.1W ES6 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	封装: SOT-563, SOT-666	库存31,152
CLH02(TE16R,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 300V 3A L-FLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 3A (DC) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 300V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: L-FLAT? Supplier Device Package: L-FLAT? (4x5.5) Operating Temperature - Junction: -40°C ~ 150°C	封装: L-FLAT?	库存3,696
1SS397TE85LF	Toshiba Semiconductor and Storage	DIODE GEN PURP 400V 100MA SC70 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 1µA @ 400V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70 Operating Temperature - Junction: 125°C (Max)	封装: SC-70, SOT-323	库存4,080
1SS393,LF	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 100MA SC70 Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io) (per Diode): 100mA Voltage - Forward (Vf) (Max) @ If: 600mV @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 40V Operating Temperature - Junction: -40°C ~ 100°C Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	封装: SC-70, SOT-323	库存35,280
TA78DS08BP(DNSO,FM	Toshiba Semiconductor and Storage	IC REG LINEAR 30MA LSTM Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 30mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -40°C ~ 85°C Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: LSTM	封装: TO-226-3, TO-92-3 Long Body	库存5,680
TCR2LE18,LM(CT	Toshiba Semiconductor and Storage	IC REG LINEAR 1.8V 200MA ESV Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1.8V Voltage - Output (Max): - Voltage Dropout (Max): 0.62V @ 150mA Current - Output: 200mA Current - Quiescent (Iq): - Current - Supply (Max): 2µA PSRR: - Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: ESV	封装: SOT-553	库存5,040
TB62785FTG,EL	Toshiba Semiconductor and Storage	IC LED DRIVER 24VQFN Type: Linear Topology: Shift Register Internal Switch(s): Yes Number of Outputs: 8 Voltage - Supply (Min): 4.5V Voltage - Supply (Max): 5.5V Voltage - Output: 17V Current - Output / Channel: 50mA Frequency: - Dimming: - Applications: - Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-VFQFN Exposed Pad Supplier Device Package: 24-VQFN (4x4)	封装: 24-VFQFN Exposed Pad	库存34,260
TC74VHC165FTELM	Toshiba Semiconductor and Storage	IC REG SHIFT PISO 8BIT 16TSSOP Logic Type: Shift Register Output Type: Complementary Number of Elements: 1 Number of Bits per Element: 8 Function: Parallel or Serial to Serial Voltage - Supply: 2 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 16-TSSOP	封装: 16-TSSOP (0.173", 4.40mm Width)	库存6,880
TLP291(E)	Toshiba Semiconductor and Storage	OPTOISOLATOR 3.75KV TRANS 4-SO Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 5mA Current Transfer Ratio (Max): 400% @ 5mA Turn On / Turn Off Time (Typ): 7µs, 7µs Rise / Fall Time (Typ): 4µs, 7µs Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Package / Case: 4-SOIC (0.179", 4.55mm) Supplier Device Package: 4-SO	封装: 4-SOIC (0.179", 4.55mm)	库存7,182
TLP292-4(V4LATPE	Toshiba Semiconductor and Storage	OPTOISOLATOR 3.75KV TRANS SO16 Number of Channels: 4 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 500µA Current Transfer Ratio (Max): 600% @ 500µA Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Input Type: AC, DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55°C ~ 125°C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.179", 4.55mm Width) Supplier Device Package: 16-SO	封装: 16-SOIC (0.179", 4.55mm Width)	库存16,830
TMPM036FWFG(KY,JZ)	Toshiba Semiconductor and Storage	TX FAMILY MCU Core Processor: ARM® Cortex®-M0 Core Size: 32-Bit Speed: 20MHz Connectivity: I²C, SIO, UART/USART Peripherals: DMA, LVD, POR, WDT Number of I/O: 85 Program Memory Size: 128KB (128K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 16K x 8 Voltage - Supply (Vcc/Vdd): 2.7 V ~ 3.6 V Data Converters: A/D 8x12b Oscillator Type: External Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14x14)	封装: 100-LQFP	库存9,984
TCR2LF115,LM(CT	Toshiba Semiconductor and Storage	200MA LDO VOUT1.15V DROPOUT220MV Output Configuration: - Output Type: - Number of Regulators: - Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: - Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,504
TCR2LN115,LF	Toshiba Semiconductor and Storage	200MA LDO VOUT=1.15V DROPOUT=200 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1.15V Voltage - Output (Max): - Voltage Dropout (Max): 1.28V @ 150mA Current - Output: 200mA Current - Quiescent (Iq): 2µA Current - Supply (Max): - PSRR: - Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-XFDFN Exposed Pad Supplier Device Package: 4-SDFN (0.8x0.8)	封装: 4-XFDFN Exposed Pad	库存103,608
TCR2EN18-LF-SE	Toshiba Semiconductor and Storage	LDO REG VOUT=1.8V IOUT=200MA Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1.8V Voltage - Output (Max): - Voltage Dropout (Max): 0.29V @ 300mA, 0.3V @ 300mA Current - Output: 200mA Current - Quiescent (Iq): 60 µA Current - Supply (Max): - PSRR: - Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-XFDFN Exposed Pad Supplier Device Package: 4-SDFN (0.8x0.8)	封装: -	库存29,925
TK16J60W-S1VE	Toshiba Semiconductor and Storage	X35 PB-F POWER MOSFET TRANSISTOR FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 790µA Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-3P(N) Package / Case: TO-3P-3, SC-65-3	封装: -	库存126
TCTH022BE-LF-CT	Toshiba Semiconductor and Storage	OVER TEMP DETECTION IC IPTCO: 10 Type: Thermal Number of Voltages Monitored: 1 Output: Open Drain or Open Collector Reset: - Reset Timeout: 214µs Typical Voltage - Threshold: 0.5V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: ESV	封装: -	库存23,937
TRS12N65FB-S1F-S	Toshiba Semiconductor and Storage	DIODE ARR SIC SCHOTT 650V TO247 Diode Configuration: 1 Pair Common Cathode Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io) (per Diode): 6A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 90 µA @ 650 V Operating Temperature - Junction: 175°C (Max) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	封装: -	Request a Quote
TK6R7A10PL-S4X	Toshiba Semiconductor and Storage	X35 PB-F POWER MOSFET TRANSISTOR FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3455 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 28A, 10V Operating Temperature: 175°C Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	封装: -	库存153
RN2311-LXHF	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A SC70 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 10 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	封装: -	库存17,820
SSM3J15F-LF	Toshiba Semiconductor and Storage	MOSFET P-CH 30V 100MA S-MINI FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs(th) (Max) @ Id: 1.7V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: S-Mini Package / Case: TO-236-3, SC-59, SOT-23-3	封装: -	库存23,637

2SJ438(CANO,Q,M)

Toshiba Semiconductor and Storage

MOSFET P-CH

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-220NIS
Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

库存3,680

TK4P55D(T6RSS-Q)

Toshiba Semiconductor and Storage

MOSFET N-CH 550V 4A DPAK-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 550V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 1.88 Ohm @ 2A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存48,000

TPC8031-H(TE12LQM)

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 11A SOP8 2-6J1B

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 10V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 13.3 mOhm @ 5.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP (5.5x6.0)
Package / Case: 8-SOIC (0.173", 4.40mm Width)

封装: 8-SOIC (0.173", 4.40mm Width)

库存7,392

TK6A55DA(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 550V 5.5A TO-220SIS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 550V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 1.48 Ohm @ 2.8A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

库存4,688

TPH2R608NH,L1Q

Toshiba Semiconductor and Storage

MOSFET N-CH 75V 150A SOP8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 37.5V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 142W (Tc)
Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 50A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN

封装: 8-PowerVDFN

库存2,384

2SD2129,LS4ALPSQ(M

Toshiba Semiconductor and Storage

TRANS NPN 3A 100V TO220-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1.5A, 3V
Power - Max: 2W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220NIS

封装: TO-220-3 Full Pack

库存3,840

2SA1020-Y(T6TR1,AF

Toshiba Semiconductor and Storage

TRANS PNP 2A 50V TO226-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

封装: TO-226-3, TO-92-3 Long Body

库存3,616

2SA1020-Y(ND1,AF)

Toshiba Semiconductor and Storage

TRANS PNP 2A 50V TO226-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

封装: TO-226-3, TO-92-3 Long Body

库存5,056

2SC6026CTGRTPL3

Toshiba Semiconductor and Storage

TRANS NPN 50V 0.1A CST3

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Power - Max: 100mW
Frequency - Transition: 60MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: CST3

封装: SC-101, SOT-883

库存6,480

2SA1312GRTE85LF

Toshiba Semiconductor and Storage

TRANS PNP 120V 0.1A S-MINI

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Power - Max: 150mW
Frequency - Transition: 100MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

封装: TO-236-3, SC-59, SOT-23-3

库存84,378

RN1911FETE85LF

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ES6

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

封装: SOT-563, SOT-666

库存31,152

CLH02(TE16R,Q)

Toshiba Semiconductor and Storage

DIODE GEN PURP 300V 3A L-FLAT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 3A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 300V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: L-FLAT?
Supplier Device Package: L-FLAT? (4x5.5)
Operating Temperature - Junction: -40°C ~ 150°C

封装: L-FLAT?

库存3,696

1SS397TE85LF

Toshiba Semiconductor and Storage

DIODE GEN PURP 400V 100MA SC70

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70
Operating Temperature - Junction: 125°C (Max)

封装: SC-70, SOT-323

库存4,080

1SS393,LF

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 100MA SC70

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io) (per Diode): 100mA
Voltage - Forward (Vf) (Max) @ If: 600mV @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 40V
Operating Temperature - Junction: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM

封装: SC-70, SOT-323

库存35,280

TA78DS08BP(DNSO,FM

Toshiba Semiconductor and Storage

IC REG LINEAR 30MA LSTM

Output Configuration: -
Output Type: -
Number of Regulators: 1
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 30mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: LSTM

封装: TO-226-3, TO-92-3 Long Body

库存5,680

TCR2LE18,LM(CT

Toshiba Semiconductor and Storage

IC REG LINEAR 1.8V 200MA ESV

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 1.8V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.62V @ 150mA
Current - Output: 200mA
Current - Quiescent (Iq): -
Current - Supply (Max): 2µA
PSRR: -
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: SOT-553
Supplier Device Package: ESV

封装: SOT-553

库存5,040

TB62785FTG,EL

Toshiba Semiconductor and Storage

IC LED DRIVER 24VQFN

Type: Linear
Topology: Shift Register
Internal Switch(s): Yes
Number of Outputs: 8
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 5.5V
Voltage - Output: 17V
Current - Output / Channel: 50mA
Frequency: -
Dimming: -
Applications: -
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VFQFN Exposed Pad
Supplier Device Package: 24-VQFN (4x4)

封装: 24-VFQFN Exposed Pad

库存34,260

TC74VHC165FTELM

Toshiba Semiconductor and Storage

IC REG SHIFT PISO 8BIT 16TSSOP

Logic Type: Shift Register
Output Type: Complementary
Number of Elements: 1
Number of Bits per Element: 8
Function: Parallel or Serial to Serial
Voltage - Supply: 2 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 16-TSSOP

封装: 16-TSSOP (0.173", 4.40mm Width)

库存6,880

TLP291(E)

Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS 4-SO

Number of Channels: 1
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Current Transfer Ratio (Max): 400% @ 5mA
Turn On / Turn Off Time (Typ): 7µs, 7µs
Rise / Fall Time (Typ): 4µs, 7µs
Input Type: DC
Output Type: Transistor
Voltage - Output (Max): 80V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.25V
Current - DC Forward (If) (Max): 50mA
Vce Saturation (Max): 300mV
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: 4-SOIC (0.179", 4.55mm)
Supplier Device Package: 4-SO

封装: 4-SOIC (0.179", 4.55mm)

库存7,182

TLP292-4(V4LATPE

Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS SO16

Number of Channels: 4
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 500µA
Current Transfer Ratio (Max): 600% @ 500µA
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Input Type: AC, DC
Output Type: Transistor
Voltage - Output (Max): 80V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.25V
Current - DC Forward (If) (Max): 50mA
Vce Saturation (Max): 300mV
Operating Temperature: -55°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Supplier Device Package: 16-SO

封装: 16-SOIC (0.179", 4.55mm Width)

库存16,830

TMPM036FWFG(KY,JZ)

Toshiba Semiconductor and Storage

TX FAMILY MCU

Core Processor: ARM® Cortex®-M0
Core Size: 32-Bit
Speed: 20MHz
Connectivity: I²C, SIO, UART/USART
Peripherals: DMA, LVD, POR, WDT
Number of I/O: 85
Program Memory Size: 128KB (128K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 16K x 8
Voltage - Supply (Vcc/Vdd): 2.7 V ~ 3.6 V
Data Converters: A/D 8x12b
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: 100-LQFP
Supplier Device Package: 100-LQFP (14x14)

封装: 100-LQFP

库存9,984

TCR2LF115,LM(CT

Toshiba Semiconductor and Storage

200MA LDO VOUT1.15V DROPOUT220MV

Output Configuration: -
Output Type: -
Number of Regulators: -
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: -
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,504

TCR2LN115,LF

Toshiba Semiconductor and Storage

200MA LDO VOUT=1.15V DROPOUT=200

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 1.15V
Voltage - Output (Max): -
Voltage Dropout (Max): 1.28V @ 150mA
Current - Output: 200mA
Current - Quiescent (Iq): 2µA
Current - Supply (Max): -
PSRR: -
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-XFDFN Exposed Pad
Supplier Device Package: 4-SDFN (0.8x0.8)

封装: 4-XFDFN Exposed Pad

库存103,608

TCR2EN18-LF-SE

Toshiba Semiconductor and Storage

LDO REG VOUT=1.8V IOUT=200MA

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 1.8V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.29V @ 300mA, 0.3V @ 300mA
Current - Output: 200mA
Current - Quiescent (Iq): 60 µA
Current - Supply (Max): -
PSRR: -
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-XFDFN Exposed Pad
Supplier Device Package: 4-SDFN (0.8x0.8)

封装: -

库存29,925

TK16J60W-S1VE

Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Operating Temperature: 150°C
Mounting Type: Through Hole
Supplier Device Package: TO-3P(N)
Package / Case: TO-3P-3, SC-65-3

封装: -

库存126

TCTH022BE-LF-CT

Toshiba Semiconductor and Storage

OVER TEMP DETECTION IC IPTCO: 10

Type: Thermal
Number of Voltages Monitored: 1
Output: Open Drain or Open Collector
Reset: -
Reset Timeout: 214µs Typical
Voltage - Threshold: 0.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-553
Supplier Device Package: ESV

封装: -

库存23,937

TRS12N65FB-S1F-S

Toshiba Semiconductor and Storage

DIODE ARR SIC SCHOTT 650V TO247

Diode Configuration: 1 Pair Common Cathode
Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io) (per Diode): 6A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Operating Temperature - Junction: 175°C (Max)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

封装: -

Request a Quote

TK6R7A10PL-S4X

Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3455 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 28A, 10V
Operating Temperature: 175°C
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack

封装: -

库存153

RN2311-LXHF

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SC70

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 10 kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70

封装: -

库存17,820

SSM3J15F-LF

Toshiba Semiconductor and Storage

MOSFET P-CH 30V 100MA S-MINI

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: S-Mini
Package / Case: TO-236-3, SC-59, SOT-23-3

封装: -

库存23,637