页 115 - Toshiba Semiconductor and Storage 产品

零件编号	制造商	描述	封装	库存
2SJ438,MDKQ(J	Toshiba Semiconductor and Storage	MOSFET P-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220NIS Package / Case: TO-220-3 Full Pack	封装: TO-220-3 Full Pack	库存2,048
TPHR6503PL,L1Q	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 150A 8SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 960mW (Ta), 170W (Tc) Rds On (Max) @ Id, Vgs: 0.65 mOhm @ 50A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	封装: 8-PowerVDFN	库存3,568
TTC012(Q)	Toshiba Semiconductor and Storage	TRANS NPN 375V 2A PW MOLD2 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 375V Vce Saturation (Max) @ Ib, Ic: 1V @ 62.5mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 300mA, 5V Power - Max: 1.1W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: PW-MOLD2	封装: TO-251-3 Short Leads, IPak, TO-251AA	库存3,824
RN4908(T5L,F,T)	Toshiba Semiconductor and Storage	TRANS NPN/PNP PREBIAS 0.2W US6 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封装: 6-TSSOP, SC-88, SOT-363	库存3,984
RN1610(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2NPN PREBIAS 0.3W SM6 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	封装: SC-74, SOT-457	库存4,800
HN2D01FTE85LF	Toshiba Semiconductor and Storage	DIODE ARRAY GP 80V 80MA SC74 Diode Configuration: 3 Independent Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io) (per Diode): 80mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 500nA @ 80V Operating Temperature - Junction: 125°C (Max) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SC-74	封装: SC-74, SOT-457	库存3,488
TA76432S,T6F(J	Toshiba Semiconductor and Storage	IC REG LINEAR 15MA LSTM Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 15mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -40°C ~ 85°C Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: LSTM	封装: TO-226-3, TO-92-3 Long Body	库存6,848
TCR2EN33,LF	Toshiba Semiconductor and Storage	IC REG LINEAR 3.3V 200MA 4-SDFN Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 3.3V Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 200mA Current - Quiescent (Iq): - Current - Supply (Max): 60µA PSRR: 73dB (1kHz) Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-XFDFN Exposed Pad Supplier Device Package: 4-SDFN (0.8x0.8)	封装: 4-XFDFN Exposed Pad	库存3,936
TCR5AM11,LF	Toshiba Semiconductor and Storage	IC REG LINEAR 1.1V 500MA 5DFNB Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1.1V Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 500mA Current - Quiescent (Iq): - Current - Supply (Max): 55µA ~ 68µA PSRR: 70dB (1kHz) Control Features: Enable Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-XDFN Exposed Pad Supplier Device Package: 5-DFNB (1.2x1.2)	封装: 4-XDFN Exposed Pad	库存39,720
TC7SET00FU,LJ(CT	Toshiba Semiconductor and Storage	IC GATE NAND 1CH 2-INP USV Logic Type: NAND Gate Number of Circuits: 1 Number of Inputs: 2 Features: - Voltage - Supply: 4.5 V ~ 5.5 V Current - Quiescent (Max): 2µA Current - Output High, Low: 8mA, 8mA Logic Level - Low: 0.8V Logic Level - High: 2V Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: USV Package / Case: 5-TSSOP, SC-70-5, SOT-353	封装: 5-TSSOP, SC-70-5, SOT-353	库存44,454
TC7SH09FU,LJ(CT	Toshiba Semiconductor and Storage	IC GATE AND 1CH 2-INP Logic Type: AND Gate Number of Circuits: 1 Number of Inputs: 2 Features: Open Drain Voltage - Supply: 2 V ~ 5.5 V Current - Quiescent (Max): 2µA Current - Output High, Low: -, 8mA Logic Level - Low: 0.5V Logic Level - High: 1.5V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: USV Package / Case: 5-TSSOP, SC-70-5, SOT-353	封装: 5-TSSOP, SC-70-5, SOT-353	库存22,320
TC4051BFTELN	Toshiba Semiconductor and Storage	IC MUX/DEMUX 8X1 TSSOP Switch Circuit: - Multiplexer/Demultiplexer Circuit: 8:1 Number of Circuits: 1 On-State Resistance (Max): 160 Ohm Channel-to-Channel Matching (ΔRon): 4 Ohm Voltage - Supply, Single (V+): 3 V ~ 18 V Voltage - Supply, Dual (V±): - Switch Time (Ton, Toff) (Max): - -3db Bandwidth: 20MHz Charge Injection: - Channel Capacitance (CS(off), CD(off)): 0.2pF, 5pF Current - Leakage (IS(off)) (Max): 100nA Crosstalk: -50dB @ 1.5MHz Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 16-TSSOP	封装: 16-TSSOP (0.173", 4.40mm Width)	库存22,536
DF3A5.6LFU,LF	Toshiba Semiconductor and Storage	TVS DIODE 3.5VWM CST3 Type: Zener Unidirectional Channels: 2 Bidirectional Channels: - Voltage - Reverse Standoff (Typ): 3.5V Voltage - Breakdown (Min): 5.3V Voltage - Clamping (Max) @ Ipp: - Current - Peak Pulse (10/1000µs): - Power - Peak Pulse: - Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 8pF @ 1MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	封装: SC-70, SOT-323	库存153,876
TLP187(TPL,E	Toshiba Semiconductor and Storage	OPTOISO 3.75KV DARL 6-SO, 4 LEAD Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 1000% @ 1mA Current Transfer Ratio (Max): - Turn On / Turn Off Time (Typ): 50µs, 15µs Rise / Fall Time (Typ): 40µs, 15µs Input Type: DC Output Type: Darlington Voltage - Output (Max): 300V Current - Output / Channel: 150mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 1.2V Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Package / Case: 6-SMD (4 Leads), Gull Wing Supplier Device Package: 6-SO, 4 Lead	封装: 6-SMD (4 Leads), Gull Wing	库存8,028
TLP291(BLL-TP,SE	Toshiba Semiconductor and Storage	OPTOISOLATOR 3.75KV TRANS 4-SO Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 200% @ 5mA Current Transfer Ratio (Max): 400% @ 5mA Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Package / Case: 4-SOIC (0.179", 4.55mm) Supplier Device Package: 4-SO	封装: 4-SOIC (0.179", 4.55mm)	库存6,624
TLP292-4(LA-TR,E	Toshiba Semiconductor and Storage	OPTOISOLATOR 3.75KV TRANS SO16 Number of Channels: 4 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 500µA Current Transfer Ratio (Max): 600% @ 500µA Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Input Type: AC, DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55°C ~ 125°C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.179", 4.55mm Width) Supplier Device Package: 16-SO	封装: 16-SOIC (0.179", 4.55mm Width)	库存17,334
6N136F	Toshiba Semiconductor and Storage	OPTOISO 2.5KV TRANS W/BASE 8DIP Number of Channels: 1 Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 19% @ 16mA Current Transfer Ratio (Max): - Turn On / Turn Off Time (Typ): 200ns, 500ns Rise / Fall Time (Typ): - Input Type: DC Output Type: Transistor with Base Voltage - Output (Max): 15V Current - Output / Channel: 8mA Voltage - Forward (Vf) (Typ): 1.65V Current - DC Forward (If) (Max): 25mA Vce Saturation (Max): - Operating Temperature: -55°C ~ 100°C Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP	封装: 8-DIP (0.300", 7.62mm)	库存23,802
TLP104(V4,E	Toshiba Semiconductor and Storage	OPTOISO 3.75KV OPEN COLL SO6 Number of Channels: 1 Inputs - Side 1/Side 2: 1/0 Voltage - Isolation: 3750Vrms Common Mode Transient Immunity (Min): 15kV/µs Input Type: DC Output Type: Open Collector Current - Output / Channel: 8mA Data Rate: 1Mbps Propagation Delay tpLH / tpHL (Max): 550ns, 400ns Rise / Fall Time (Typ): - Voltage - Forward (Vf) (Typ): 1.61V Current - DC Forward (If) (Max): 25mA Voltage - Supply: 4.5 V ~ 30 V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.179", 4.55mm Width) 5 Leads Supplier Device Package: 6-SO, 5 Lead	封装: 6-SOIC (0.179", 4.55mm Width) 5 Leads	库存6,852
74LCX138FT	Toshiba Semiconductor and Storage	X34 PB-F 3-TO-8 LINE DECODER DEC Type: Decoder/Demultiplexer Circuit: 1 x 3:8 Independent Circuits: 1 Current - Output High, Low: 24mA, 24mA Voltage Supply Source: Single Supply Voltage - Supply: 1.65V ~ 3.6V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 16-TSSOPB	封装: 16-TSSOP (0.173", 4.40mm Width)	库存21,384
TW048N65C-S1F	Toshiba Semiconductor and Storage	G3 650V SIC-MOSFET TO-247 48MOH FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5V @ 1.6mA Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1362 pF @ 400 V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 132W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 20A, 18V Operating Temperature: 175°C Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	封装: -	库存108
TK1K9A60F-S4X	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 3.7A TO220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 400µA Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 1.9Ohm @ 1.9A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	封装: -	Request a Quote
7UL1T32FS-LF-B	Toshiba Semiconductor and Storage	L-MOS LVP IC VCC: 2.3V-3.6V, SOT Logic Type: OR Gate Number of Circuits: 1 Number of Inputs: 2 Features: - Voltage - Supply: 2.3V ~ 3.6V Current - Quiescent (Max): 1 µA Current - Output High, Low: 8mA, 8mA Logic Level - Low: 0.35V ~ 0.5V Logic Level - High: 1.1V ~ 1.2V Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 15pF Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Supplier Device Package: fSV Package / Case: SOT-953	封装: -	Request a Quote
7UL1G00FU-LF	Toshiba Semiconductor and Storage	IC GATE NAND 1CH 2-INP USV Logic Type: NAND Gate Number of Circuits: 1 Number of Inputs: 2 Features: - Voltage - Supply: 0.9V ~ 3.6V Current - Quiescent (Max): 1 µA Current - Output High, Low: 8mA, 8mA Logic Level - Low: 0.7V ~ 0.8V Logic Level - High: 1.7V ~ 2V Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Supplier Device Package: USV Package / Case: 5-TSSOP, SC-70-5, SOT-353	封装: -	库存17,277
RN1313-LF	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V 0.1A USM Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 47 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	封装: -	库存9,000
TDTC143E-LM	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V SOT23-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 320 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	封装: -	库存8,049
TCR1HF33B-LM-CT	Toshiba Semiconductor and Storage	40V 150MA LDO LOW IQ 1UA SOT-25 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 36V Voltage - Output (Min/Fixed): 3.3V Voltage - Output (Max): - Voltage Dropout (Max): 0.76V @ 150mA Current - Output: 150mA Current - Quiescent (Iq): 1.6 µA Current - Supply (Max): - PSRR: 60dB (1kHz) Control Features: Current Limit, Enable Protection Features: Over Current, Over Temperature Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	封装: -	库存6,819
RN2110-LF-CT	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A SSM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	封装: -	库存6,000
TCTH022AE-LF-CT	Toshiba Semiconductor and Storage	CMOS LINEAR IC OVER TEMP DETECTI Type: Thermal Number of Voltages Monitored: 1 Output: Push-Pull, Totem Pole Reset: - Reset Timeout: 17µs Typical Voltage - Threshold: 0.5V Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: ESV	封装: -	库存24,000
CMS04-TE12L	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 5A MFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 370 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 8 mA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 125°C	封装: -	Request a Quote
RN1117-TE85L-F	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V 0.1A SSM Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 10 kOhms Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	封装: -	库存2,694

2SJ438,MDKQ(J

Toshiba Semiconductor and Storage

MOSFET P-CH

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-220NIS
Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

库存2,048

TPHR6503PL,L1Q

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 150A 8SOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs: 0.65 mOhm @ 50A, 10V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN

封装: 8-PowerVDFN

库存3,568

TTC012(Q)

Toshiba Semiconductor and Storage

TRANS NPN 375V 2A PW MOLD2

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 375V
Vce Saturation (Max) @ Ib, Ic: 1V @ 62.5mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 300mA, 5V
Power - Max: 1.1W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: PW-MOLD2

封装: TO-251-3 Short Leads, IPak, TO-251AA

库存3,824

RN4908(T5L,F,T)

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.2W US6

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

封装: 6-TSSOP, SC-88, SOT-363

库存3,984

RN1610(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.3W SM6

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: SM6

封装: SC-74, SOT-457

库存4,800

HN2D01FTE85LF

Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 80MA SC74

Diode Configuration: 3 Independent
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io) (per Diode): 80mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 500nA @ 80V
Operating Temperature - Junction: 125°C (Max)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: SC-74

封装: SC-74, SOT-457

库存3,488

TA76432S,T6F(J

Toshiba Semiconductor and Storage

IC REG LINEAR 15MA LSTM

Output Configuration: -
Output Type: -
Number of Regulators: 1
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 15mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: LSTM

封装: TO-226-3, TO-92-3 Long Body

库存6,848

TCR2EN33,LF

Toshiba Semiconductor and Storage

IC REG LINEAR 3.3V 200MA 4-SDFN

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 3.3V
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 200mA
Current - Quiescent (Iq): -
Current - Supply (Max): 60µA
PSRR: 73dB (1kHz)
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-XFDFN Exposed Pad
Supplier Device Package: 4-SDFN (0.8x0.8)

封装: 4-XFDFN Exposed Pad

库存3,936

TCR5AM11,LF

Toshiba Semiconductor and Storage

IC REG LINEAR 1.1V 500MA 5DFNB

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 1.1V
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 500mA
Current - Quiescent (Iq): -
Current - Supply (Max): 55µA ~ 68µA
PSRR: 70dB (1kHz)
Control Features: Enable
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-XDFN Exposed Pad
Supplier Device Package: 5-DFNB (1.2x1.2)

封装: 4-XDFN Exposed Pad

库存39,720

TC7SET00FU,LJ(CT

Toshiba Semiconductor and Storage

IC GATE NAND 1CH 2-INP USV

Logic Type: NAND Gate
Number of Circuits: 1
Number of Inputs: 2
Features: -
Voltage - Supply: 4.5 V ~ 5.5 V
Current - Quiescent (Max): 2µA
Current - Output High, Low: 8mA, 8mA
Logic Level - Low: 0.8V
Logic Level - High: 2V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: USV
Package / Case: 5-TSSOP, SC-70-5, SOT-353

封装: 5-TSSOP, SC-70-5, SOT-353

库存44,454

TC7SH09FU,LJ(CT

Toshiba Semiconductor and Storage

IC GATE AND 1CH 2-INP

Logic Type: AND Gate
Number of Circuits: 1
Number of Inputs: 2
Features: Open Drain
Voltage - Supply: 2 V ~ 5.5 V
Current - Quiescent (Max): 2µA
Current - Output High, Low: -, 8mA
Logic Level - Low: 0.5V
Logic Level - High: 1.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: USV
Package / Case: 5-TSSOP, SC-70-5, SOT-353

封装: 5-TSSOP, SC-70-5, SOT-353

库存22,320

TC4051BFTELN

Toshiba Semiconductor and Storage

IC MUX/DEMUX 8X1 TSSOP

Switch Circuit: -
Multiplexer/Demultiplexer Circuit: 8:1
Number of Circuits: 1
On-State Resistance (Max): 160 Ohm
Channel-to-Channel Matching (ΔRon): 4 Ohm
Voltage - Supply, Single (V+): 3 V ~ 18 V
Voltage - Supply, Dual (V±): -
Switch Time (Ton, Toff) (Max): -
-3db Bandwidth: 20MHz
Charge Injection: -
Channel Capacitance (CS(off), CD(off)): 0.2pF, 5pF
Current - Leakage (IS(off)) (Max): 100nA
Crosstalk: -50dB @ 1.5MHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 16-TSSOP

封装: 16-TSSOP (0.173", 4.40mm Width)

库存22,536

DF3A5.6LFU,LF

Toshiba Semiconductor and Storage

TVS DIODE 3.5VWM CST3

Type: Zener
Unidirectional Channels: 2
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 3.5V
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: -
Current - Peak Pulse (10/1000µs): -
Power - Peak Pulse: -
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: 8pF @ 1MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM

封装: SC-70, SOT-323

库存153,876

TLP187(TPL,E

Toshiba Semiconductor and Storage

OPTOISO 3.75KV DARL 6-SO, 4 LEAD

Number of Channels: 1
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Current Transfer Ratio (Max): -
Turn On / Turn Off Time (Typ): 50µs, 15µs
Rise / Fall Time (Typ): 40µs, 15µs
Input Type: DC
Output Type: Darlington
Voltage - Output (Max): 300V
Current - Output / Channel: 150mA
Voltage - Forward (Vf) (Typ): 1.25V
Current - DC Forward (If) (Max): 50mA
Vce Saturation (Max): 1.2V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: 6-SMD (4 Leads), Gull Wing
Supplier Device Package: 6-SO, 4 Lead

封装: 6-SMD (4 Leads), Gull Wing

库存8,028

TLP291(BLL-TP,SE

Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS 4-SO

Number of Channels: 1
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Current Transfer Ratio (Max): 400% @ 5mA
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Input Type: DC
Output Type: Transistor
Voltage - Output (Max): 80V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.25V
Current - DC Forward (If) (Max): 50mA
Vce Saturation (Max): 300mV
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: 4-SOIC (0.179", 4.55mm)
Supplier Device Package: 4-SO

封装: 4-SOIC (0.179", 4.55mm)

库存6,624

TLP292-4(LA-TR,E

Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS SO16

Number of Channels: 4
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 500µA
Current Transfer Ratio (Max): 600% @ 500µA
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Input Type: AC, DC
Output Type: Transistor
Voltage - Output (Max): 80V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.25V
Current - DC Forward (If) (Max): 50mA
Vce Saturation (Max): 300mV
Operating Temperature: -55°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Supplier Device Package: 16-SO

封装: 16-SOIC (0.179", 4.55mm Width)

库存17,334

6N136F

Toshiba Semiconductor and Storage

OPTOISO 2.5KV TRANS W/BASE 8DIP

Number of Channels: 1
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): -
Turn On / Turn Off Time (Typ): 200ns, 500ns
Rise / Fall Time (Typ): -
Input Type: DC
Output Type: Transistor with Base
Voltage - Output (Max): 15V
Current - Output / Channel: 8mA
Voltage - Forward (Vf) (Typ): 1.65V
Current - DC Forward (If) (Max): 25mA
Vce Saturation (Max): -
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-DIP

封装: 8-DIP (0.300", 7.62mm)

库存23,802

TLP104(V4,E

Toshiba Semiconductor and Storage

OPTOISO 3.75KV OPEN COLL SO6

Number of Channels: 1
Inputs - Side 1/Side 2: 1/0
Voltage - Isolation: 3750Vrms
Common Mode Transient Immunity (Min): 15kV/µs
Input Type: DC
Output Type: Open Collector
Current - Output / Channel: 8mA
Data Rate: 1Mbps
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Rise / Fall Time (Typ): -
Voltage - Forward (Vf) (Typ): 1.61V
Current - DC Forward (If) (Max): 25mA
Voltage - Supply: 4.5 V ~ 30 V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.179", 4.55mm Width) 5 Leads
Supplier Device Package: 6-SO, 5 Lead

封装: 6-SOIC (0.179", 4.55mm Width) 5 Leads

库存6,852

74LCX138FT

Toshiba Semiconductor and Storage

X34 PB-F 3-TO-8 LINE DECODER DEC

Type: Decoder/Demultiplexer
Circuit: 1 x 3:8
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Voltage Supply Source: Single Supply
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 16-TSSOPB

封装: 16-TSSOP (0.173", 4.40mm Width)

库存21,384

TW048N65C-S1F

Toshiba Semiconductor and Storage

G3 650V SIC-MOSFET TO-247 48MOH

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs(th) (Max) @ Id: 5V @ 1.6mA
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1362 pF @ 400 V
Vgs (Max): +25V, -10V
FET Feature: -
Power Dissipation (Max): 132W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 20A, 18V
Operating Temperature: 175°C
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3

封装: -

库存108

TK1K9A60F-S4X

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 3.7A TO220SIS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 400µA
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 1.9A, 10V
Operating Temperature: 150°C
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack

封装: -

Request a Quote

7UL1T32FS-LF-B

Toshiba Semiconductor and Storage

L-MOS LVP IC VCC: 2.3V-3.6V, SOT

Logic Type: OR Gate
Number of Circuits: 1
Number of Inputs: 2
Features: -
Voltage - Supply: 2.3V ~ 3.6V
Current - Quiescent (Max): 1 µA
Current - Output High, Low: 8mA, 8mA
Logic Level - Low: 0.35V ~ 0.5V
Logic Level - High: 1.1V ~ 1.2V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 15pF
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Supplier Device Package: fSV
Package / Case: SOT-953

封装: -

Request a Quote

7UL1G00FU-LF

Toshiba Semiconductor and Storage

IC GATE NAND 1CH 2-INP USV

Logic Type: NAND Gate
Number of Circuits: 1
Number of Inputs: 2
Features: -
Voltage - Supply: 0.9V ~ 3.6V
Current - Quiescent (Max): 1 µA
Current - Output High, Low: 8mA, 8mA
Logic Level - Low: 0.7V ~ 0.8V
Logic Level - High: 1.7V ~ 2V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Supplier Device Package: USV
Package / Case: 5-TSSOP, SC-70-5, SOT-353

封装: -

库存17,277

RN1313-LF

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A USM

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 47 kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM

封装: -

库存9,000

TDTC143E-LM

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V SOT23-3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 4.7 kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 320 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

封装: -

库存8,049

TCR1HF33B-LM-CT

Toshiba Semiconductor and Storage

40V 150MA LDO LOW IQ 1UA SOT-25

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 36V
Voltage - Output (Min/Fixed): 3.3V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.76V @ 150mA
Current - Output: 150mA
Current - Quiescent (Iq): 1.6 µA
Current - Supply (Max): -
PSRR: 60dB (1kHz)
Control Features: Current Limit, Enable
Protection Features: Over Current, Over Temperature
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMV

封装: -

库存6,819

RN2110-LF-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SSM

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 4.7 kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

封装: -

库存6,000

TCTH022AE-LF-CT

Toshiba Semiconductor and Storage

CMOS LINEAR IC OVER TEMP DETECTI

Type: Thermal
Number of Voltages Monitored: 1
Output: Push-Pull, Totem Pole
Reset: -
Reset Timeout: 17µs Typical
Voltage - Threshold: 0.5V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-553
Supplier Device Package: ESV

封装: -

库存24,000

CMS04-TE12L

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 5A MFLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 8 mA @ 30 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 125°C

封装: -

Request a Quote

RN1117-TE85L-F

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SSM

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 10 kOhms
Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

封装: -

库存2,694