页 3 - Toshiba Semiconductor and Storage 产品 - 二极管 - 整流器 - 单 | 深圳黑森尔电子
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Toshiba Semiconductor and Storage 产品 - 二极管 - 整流器 - 单

记录 267
页  3/9
图片
零件编号
制造商
描述
封装
库存
数量
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
CRH01-TE85L
Toshiba Semiconductor and Storage

DIODE SWITCHING 200V 1A SFLAT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: S-FLAT (1.6x3.5)
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: -
Request a Quote
200 V
1A
980 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
10 µA @ 200 V
-
Surface Mount
SOD-123F
S-FLAT (1.6x3.5)
-40°C ~ 150°C
CMG02-TE12L-Q-M
Toshiba Semiconductor and Storage

DIODE GEN PURP 400V 2A M-FLAT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: M-FLAT (2.4x3.8)
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: -
Request a Quote
400 V
2A
1.1 V @ 2 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 400 V
-
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
-40°C ~ 150°C
TRS6E65F-S1Q
Toshiba Semiconductor and Storage

DIODE SIL CARB 650V 6A TO220-2L

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 30 µA @ 650 V
  • Capacitance @ Vr, F: 22pF @ 650V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2L
  • Operating Temperature - Junction: 175°C (Max)
封装: -
Request a Quote
650 V
6A
1.6 V @ 6 A
No Recovery Time > 500mA (Io)
0 ns
30 µA @ 650 V
22pF @ 650V, 1MHz
Through Hole
TO-220-2
TO-220-2L
175°C (Max)
TRS8V65H-LQ
Toshiba Semiconductor and Storage

G3 SIC-SBD 650V 8A DFN8X8

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 8 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 90 µA @ 650 V
  • Capacitance @ Vr, F: 520pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 4-VSFN Exposed Pad
  • Supplier Device Package: 4-DFN-EP (8x8)
  • Operating Temperature - Junction: 175°C
封装: -
库存13,500
650 V
8A
1.35 V @ 8 A
No Recovery Time > 500mA (Io)
0 ns
90 µA @ 650 V
520pF @ 1V, 1MHz
Surface Mount
4-VSFN Exposed Pad
4-DFN-EP (8x8)
175°C
CBS05F30-L3F
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 500MA CST2B

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 30 V
  • Capacitance @ Vr, F: 118pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, No Lead
  • Supplier Device Package: CST2B
  • Operating Temperature - Junction: 125°C (Max)
封装: -
库存29,943
30 V
500mA
-
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 30 V
118pF @ 0V, 1MHz
Surface Mount
2-SMD, No Lead
CST2B
125°C (Max)
CMF01A-LQ-M
Toshiba Semiconductor and Storage

DIODE GEN PURP 600V 2A M-FLAT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 2 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: M-FLAT (2.4x3.8)
  • Operating Temperature - Junction: 150°C
封装: -
Request a Quote
600 V
2A
2 V @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
100 ns
50 µA @ 600 V
-
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
150°C
TRS10E65H-S1Q
Toshiba Semiconductor and Storage

G3 SIC-SBD 650V 10A TO-220-2L

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 650 V
  • Capacitance @ Vr, F: 649pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2L
  • Operating Temperature - Junction: 175°C
封装: -
库存876
650 V
10A
1.35 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
100 µA @ 650 V
649pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220-2L
175°C
1SS187-LF
Toshiba Semiconductor and Storage

DIODE GEN PURP 80V 100MA S-MINI

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80 V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 500 nA @ 80 V
  • Capacitance @ Vr, F: 4pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
  • Operating Temperature - Junction: 125°C (Max)
封装: -
库存3,996
80 V
100mA
1.2 V @ 100 mA
Small Signal =< 200mA (Io), Any Speed
4 ns
500 nA @ 80 V
4pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
125°C (Max)
CMS20I30A-TE12L-QM
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 2A M-FLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 30 V
  • Capacitance @ Vr, F: 82pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: M-FLAT (2.4x3.8)
  • Operating Temperature - Junction: 150°C (Max)
封装: -
库存8,880
30 V
2A
450 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 30 V
82pF @ 10V, 1MHz
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
150°C (Max)
CMH02A-TE12L-Q-M
Toshiba Semiconductor and Storage

DIODE GEN PURP 400V 3A M-FLAT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: M-FLAT (2.4x3.8)
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: -
Request a Quote
400 V
3A
1.8 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
100 ns
10 µA @ 400 V
-
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
-40°C ~ 150°C
CRS15-TE85L-Q-M
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 3A S-FLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 520 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 30 V
  • Capacitance @ Vr, F: 90pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: S-FLAT (1.6x3.5)
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: -
Request a Quote
30 V
3A
520 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 30 V
90pF @ 10V, 1MHz
Surface Mount
SOD-123F
S-FLAT (1.6x3.5)
-40°C ~ 150°C
CUHS10F60-H3F
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 60V 1A US2H

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 µA @ 60 V
  • Capacitance @ Vr, F: 130pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, Flat Lead
  • Supplier Device Package: US2H
  • Operating Temperature - Junction: 150°C (Max)
封装: -
库存62,391
60 V
1A
-
Fast Recovery =< 500ns, > 200mA (Io)
-
40 µA @ 60 V
130pF @ 0V, 1MHz
Surface Mount
2-SMD, Flat Lead
US2H
150°C (Max)
CMS17-TE12L-Q-M
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 2A M-FLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 480 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 30 V
  • Capacitance @ Vr, F: 90pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: M-FLAT (2.4x3.8)
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: -
库存9,000
30 V
2A
480 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 30 V
90pF @ 10V, 1MHz
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
-40°C ~ 150°C
CMS09-TE12L-Q-M
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1A M-FLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 30 V
  • Capacitance @ Vr, F: 70pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: M-FLAT (2.4x3.8)
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: -
库存8,928
30 V
1A
450 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 30 V
70pF @ 10V, 1MHz
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
-40°C ~ 150°C
CRH02-TE85L-Q-M
Toshiba Semiconductor and Storage

DIODE GEN PURP 200V 500MA S-FLAT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: S-FLAT (1.6x3.5)
  • Operating Temperature - Junction: 150°C (Max)
封装: -
库存6,372
200 V
500mA
950 mV @ 500 mA
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
10 µA @ 200 V
-
Surface Mount
SOD-123F
S-FLAT (1.6x3.5)
150°C (Max)
CLS10F40-L3F
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 1A CL2E

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 570 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 25 µA @ 40 V
  • Capacitance @ Vr, F: 130pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 0402 (1006 Metric)
  • Supplier Device Package: CL2E
  • Operating Temperature - Junction: 150°C
封装: -
库存321,807
40 V
1A
570 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
25 µA @ 40 V
130pF @ 0V, 1MHz
Surface Mount
0402 (1006 Metric)
CL2E
150°C
CUS10I40A-TE85L-QM
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 1A US-FLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 490 mV @ 700 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 60 µA @ 40 V
  • Capacitance @ Vr, F: 35pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: US-FLAT (1.25x2.5)
  • Operating Temperature - Junction: 150°C (Max)
封装: -
Request a Quote
40 V
1A
490 mV @ 700 mA
Fast Recovery =< 500ns, > 200mA (Io)
-
60 µA @ 40 V
35pF @ 10V, 1MHz
Surface Mount
SC-76, SOD-323
US-FLAT (1.25x2.5)
150°C (Max)
CMF02-TE12L-Q-M
Toshiba Semiconductor and Storage

DIODE GEN PURP 600V 1A M-FLAT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 2 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: M-FLAT (2.4x3.8)
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: -
Request a Quote
600 V
1A
2 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
-
50 µA @ 600 V
-
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
-40°C ~ 150°C
CUS06-TE85L-Q-M
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 20V 1A US-FLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 450 mV @ 700 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 µA @ 20 V
  • Capacitance @ Vr, F: 40pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: US-FLAT (1.25x2.5)
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: -
Request a Quote
20 V
1A
450 mV @ 700 mA
Fast Recovery =< 500ns, > 200mA (Io)
-
30 µA @ 20 V
40pF @ 10V, 1MHz
Surface Mount
SC-76, SOD-323
US-FLAT (1.25x2.5)
-40°C ~ 150°C
1N4148WS-H3F-B
Toshiba Semiconductor and Storage

100 V/0.25 A SWITCHING DIODE, SO

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 250mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3 ns
  • Current - Reverse Leakage @ Vr: 200 nA @ 80 V
  • Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: USC
  • Operating Temperature - Junction: 150°C
封装: -
库存8,979
100 V
250mA
1.25 V @ 150 mA
Fast Recovery =< 500ns, > 200mA (Io)
3 ns
200 nA @ 80 V
0.5pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
USC
150°C
TRS8A65F-S1Q
Toshiba Semiconductor and Storage

DIODE SIL CARBIDE 650V 8A TO220F

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 40 µA @ 650 V
  • Capacitance @ Vr, F: 28pF @ 650V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220F-2L
  • Operating Temperature - Junction: 175°C (Max)
封装: -
库存111
650 V
8A
1.6 V @ 8 A
No Recovery Time > 500mA (Io)
0 ns
40 µA @ 650 V
28pF @ 650V, 1MHz
Through Hole
TO-220-2 Full Pack
TO-220F-2L
175°C (Max)
TRS10E65F-S1Q
Toshiba Semiconductor and Storage

DIODE SIL CARB 650V 10A TO220-2L

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 650 V
  • Capacitance @ Vr, F: 36pF @ 650V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2L
  • Operating Temperature - Junction: 175°C (Max)
封装: -
Request a Quote
650 V
10A
1.6 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
50 µA @ 650 V
36pF @ 650V, 1MHz
Through Hole
TO-220-2
TO-220-2L
175°C (Max)
CMG06A-LQ-M
Toshiba Semiconductor and Storage

DIODE GEN PURP 600V 1A M-FLAT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: M-FLAT (2.4x3.8)
  • Operating Temperature - Junction: 150°C
封装: -
Request a Quote
600 V
1A
1.1 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 600 V
-
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
150°C
CRS10I40A-TE85L-QM
Toshiba Semiconductor and Storage

DIODE GEN PURP 40V 1A S-FLAT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 490 mV @ 700 mA
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 60 µA @ 40 V
  • Capacitance @ Vr, F: 35pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: S-FLAT (1.6x3.5)
  • Operating Temperature - Junction: 150°C (Max)
封装: -
库存8,562
40 V
1A
490 mV @ 700 mA
Standard Recovery >500ns, > 200mA (Io)
-
60 µA @ 40 V
35pF @ 10V, 1MHz
Surface Mount
SOD-123F
S-FLAT (1.6x3.5)
150°C (Max)
CRS10I30C-TE85L-QM
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1A S-FLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 360 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 30 V
  • Capacitance @ Vr, F: 82pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: S-FLAT (1.6x3.5)
  • Operating Temperature - Junction: 150°C (Max)
封装: -
库存17,580
30 V
1A
360 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 30 V
82pF @ 10V, 1MHz
Surface Mount
SOD-123F
S-FLAT (1.6x3.5)
150°C (Max)
TRS8E65H-S1Q
Toshiba Semiconductor and Storage

G3 SIC-SBD 650V 8A TO-220-2L

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 8 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 90 µA @ 650 V
  • Capacitance @ Vr, F: 520pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2L
  • Operating Temperature - Junction: 175°C
封装: -
库存1,107
650 V
8A
1.35 V @ 8 A
No Recovery Time > 500mA (Io)
0 ns
90 µA @ 650 V
520pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220-2L
175°C
CUS15I30A-TE85L-QM
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1.5A US-FLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 460 mV @ 1.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 60 µA @ 30 V
  • Capacitance @ Vr, F: 50pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: US-FLAT (1.25x2.5)
  • Operating Temperature - Junction: 150°C (Max)
封装: -
Request a Quote
30 V
1.5A
460 mV @ 1.5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
60 µA @ 30 V
50pF @ 10V, 1MHz
Surface Mount
SC-76, SOD-323
US-FLAT (1.25x2.5)
150°C (Max)
CMF04-TE12L-Q-M
Toshiba Semiconductor and Storage

DIODE GEN PURP 800V 500MA M-FLAT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 500 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: M-FLAT (2.4x3.8)
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: -
库存6
800 V
500mA
2.5 V @ 500 mA
Fast Recovery =< 500ns, > 200mA (Io)
100 ns
50 µA @ 800 V
-
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
-40°C ~ 150°C
CMS10I30A-TE12L-QM
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1A M-FLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 360 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 30 V
  • Capacitance @ Vr, F: 82pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: M-FLAT (2.4x3.8)
  • Operating Temperature - Junction: 150°C (Max)
封装: -
Request a Quote
30 V
1A
360 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 30 V
82pF @ 10V, 1MHz
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
150°C (Max)
CRG09A-LQ-M
Toshiba Semiconductor and Storage

DIODE GEN PURP 400V 1A S-FLAT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: S-FLAT (1.6x3.5)
  • Operating Temperature - Junction: 150°C (Max)
封装: -
Request a Quote
400 V
1A
1.1 V @ 700 mA
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 400 V
-
Surface Mount
SOD-123F
S-FLAT (1.6x3.5)
150°C (Max)