页 38 - Taiwan Semiconductor Corporation 产品 | 深圳黑森尔电子
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Taiwan Semiconductor Corporation 产品

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BZD27C180PHMHG
Taiwan Semiconductor Corporation

DIODE, ZENER, 180V, 1000MW, %, A

  • Voltage - Zener (Nom) (Vz): 179.5V
  • Tolerance: ±6.4%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 450 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 130V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
封装: DO-219AB
库存2,832
1SMA4737 R3G
Taiwan Semiconductor Corporation

DIODE, ZENER, 7.5V, 1000MW, %, D

  • Voltage - Zener (Nom) (Vz): 7.5V
  • Tolerance: ±5%
  • Power - Max: 1.25W
  • Impedance (Max) (Zzt): 4 Ohms
  • Current - Reverse Leakage @ Vr: 5µA @ 5V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
封装: DO-214AC, SMA
库存7,184
BZX585B4V3 RKG
Taiwan Semiconductor Corporation

DIODE, ZENER, 4.3V, 200MW, 2%, S

  • Voltage - Zener (Nom) (Vz): 4.3V
  • Tolerance: ±2%
  • Power - Max: 200mW
  • Impedance (Max) (Zzt): 90 Ohms
  • Current - Reverse Leakage @ Vr: 2.7µA @ 1V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: SOD-523F
封装: SC-79, SOD-523
库存2,816
BZT52C30K RKG
Taiwan Semiconductor Corporation

DIODE, ZENER, 30V, 200MW, 5%, SO

  • Voltage - Zener (Nom) (Vz): 30V
  • Tolerance: ±5%
  • Power - Max: 200mW
  • Impedance (Max) (Zzt): 80 Ohms
  • Current - Reverse Leakage @ Vr: 100nA @ 23V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: SOD-523F
封装: SC-79, SOD-523
库存6,720
BZS55C20 RXG
Taiwan Semiconductor Corporation

DIODE, ZENER, 20V, 500MW, 5%, 12

  • Voltage - Zener (Nom) (Vz): 20V
  • Tolerance: ±5%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 55 Ohms
  • Current - Reverse Leakage @ Vr: 100nA @ 15V
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 1206 (3216 Metric)
  • Supplier Device Package: 1206
封装: 1206 (3216 Metric)
库存7,024
BZV55B2V7 L0G
Taiwan Semiconductor Corporation

DIODE, ZENER, 2.7V, 500MW, 2%, M

  • Voltage - Zener (Nom) (Vz): 2.7V
  • Tolerance: ±2%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 85 Ohms
  • Current - Reverse Leakage @ Vr: 10µA @ 1V
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AC, MINI-MELF, SOD-80
  • Supplier Device Package: Mini MELF
封装: DO-213AC, MINI-MELF, SOD-80
库存4,672
BZV55C2V4 L0G
Taiwan Semiconductor Corporation

DIODE, ZENER, 2.4V, 500MW, 5%, M

  • Voltage - Zener (Nom) (Vz): 2.4V
  • Tolerance: ±5%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 85 Ohms
  • Current - Reverse Leakage @ Vr: 50µA @ 1V
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AC, MINI-MELF, SOD-80
  • Supplier Device Package: Mini MELF
封装: DO-213AC, MINI-MELF, SOD-80
库存3,184
BZD27C51P RVG
Taiwan Semiconductor Corporation

DIODE, ZENER, 51V, 1000MW, %, SU

  • Voltage - Zener (Nom) (Vz): 51V
  • Tolerance: ±5%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 60 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 39V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
封装: DO-219AB
库存6,944
BZT52C15 RHG
Taiwan Semiconductor Corporation

DIODE, ZENER, 15V, 500MW, 5%, SO

  • Voltage - Zener (Nom) (Vz): 15V
  • Tolerance: ±5%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 30 Ohms
  • Current - Reverse Leakage @ Vr: 45nA @ 10.5V
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123F
封装: SOD-123F
库存4,032
GBU607 D2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 6A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
封装: 4-SIP, GBU
库存3,616
MTZJ24SA
Taiwan Semiconductor Corporation

DO-34, 500MW, 2%, SMALL SIGNAL Z

  • Voltage - Zener (Nom) (Vz): 22.62 V
  • Tolerance: ±2%
  • Power - Max: 500 mW
  • Impedance (Max) (Zzt): 35 Ohms
  • Current - Reverse Leakage @ Vr: 200 nA @ 19 V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AG, DO-34, Axial
  • Supplier Device Package: DO-34
封装: -
Request a Quote
MBR20L120CT
Taiwan Semiconductor Corporation

DIODE ARR SCHOT 120V 20A TO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 120 V
  • Current - Average Rectified (Io) (per Diode): 20A
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 µA @ 120 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: -
库存3,000
S2KALH
Taiwan Semiconductor Corporation

2A, 800V, STANDARD RECOVERY RECT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 800 V
  • Capacitance @ Vr, F: 12pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: Thin SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
库存84,000
HS1JAL
Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1A THIN SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 600 V
  • Capacitance @ Vr, F: 13pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: Thin SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
库存18,435
HS2GFS
Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 2A SOD128

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 400 V
  • Capacitance @ Vr, F: 25pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: SOD-128
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
库存18,090
TS50P07GH
Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 1KV 50A TS-6P

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 50 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
封装: -
库存3,546
TST10H200CW
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 200V 5A TO220AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 910 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
Request a Quote
TSM60NC390CI-C0G
Taiwan Semiconductor Corporation

600V, 11A, SINGLE N-CHANNEL POWE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 21.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 832 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 78W (Tc)
  • Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ITO-220
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
封装: -
库存11,865
BAT54SD-RF
Taiwan Semiconductor Corporation

SOT-363, 30V, 0.2A, SCHOTTKY DIO

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 25 V
  • Capacitance @ Vr, F: 10pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: -
Request a Quote
PU2DMH
Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 2A MICRO SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 36 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 200 V
  • Capacitance @ Vr, F: 18pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, Flat Lead
  • Supplier Device Package: Micro SMA
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
库存16,944
ZM4731A
Taiwan Semiconductor Corporation

MELF, 1000MW, 5%, SMALL SIGNAL Z

  • Voltage - Zener (Nom) (Vz): 4.3 V
  • Tolerance: ±5%
  • Power - Max: 1 W
  • Impedance (Max) (Zzt): 9 Ohms
  • Current - Reverse Leakage @ Vr: 10 µA @ 1 V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF
  • Supplier Device Package: MELF
封装: -
Request a Quote
MBR25150CT-Y
Taiwan Semiconductor Corporation

DIODE ARR SCHOT 150V 25A TO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io) (per Diode): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 25 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 150 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: -
Request a Quote
MMSZ4698-RHG
Taiwan Semiconductor Corporation

SOD-123, 500MW, 5%, SMALL SIGNAL

  • Voltage - Zener (Nom) (Vz): 11 V
  • Tolerance: ±5%
  • Power - Max: 500 mW
  • Impedance (Max) (Zzt): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 8.4 V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
封装: -
Request a Quote
PU3BC
Taiwan Semiconductor Corporation

25NS, 3A, 100V, ULTRA FAST RECOV

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 100 V
  • Capacitance @ Vr, F: 47pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
库存9,000
BZX584B12
Taiwan Semiconductor Corporation

SOD-523F, 150MW, 2%, SMALL SIGNA

  • Voltage - Zener (Nom) (Vz): 12 V
  • Tolerance: ±2%
  • Power - Max: 150 mW
  • Impedance (Max) (Zzt): 25 Ohms
  • Current - Reverse Leakage @ Vr: 100 nA @ 8 V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: SOD-523F
封装: -
Request a Quote
BZT55B2V4
Taiwan Semiconductor Corporation

MMELF, 500MW, 2%, SMALL SIGNAL Z

  • Voltage - Zener (Nom) (Vz): 2.4 V
  • Tolerance: ±2%
  • Power - Max: 500 mW
  • Impedance (Max) (Zzt): 85 Ohms
  • Current - Reverse Leakage @ Vr: 50 µA @ 1 V
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOD-80 Variant
  • Supplier Device Package: QMMELF
封装: -
Request a Quote
US1DH
Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 1A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
库存45,000
SSL14
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 40V 1A DO214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 390 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 125°C
封装: -
库存44,091
BZT52C56
Taiwan Semiconductor Corporation

SOD-123F, 500MW, 5%, SMALL SIGNA

  • Voltage - Zener (Nom) (Vz): 56 V
  • Tolerance: ±5%
  • Power - Max: 500 mW
  • Impedance (Max) (Zzt): 200 Ohms
  • Current - Reverse Leakage @ Vr: 45 nA @ 39.2 V
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123F
封装: -
Request a Quote
MMSZ4699-RHG
Taiwan Semiconductor Corporation

SOD-123, 500MW, 5%, SMALL SIGNAL

  • Voltage - Zener (Nom) (Vz): 12 V
  • Tolerance: ±5%
  • Power - Max: 500 mW
  • Impedance (Max) (Zzt): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
封装: -
Request a Quote