页 108 - Taiwan Semiconductor Corporation 产品

零件编号	制造商	描述	封装	库存
BZD27C91P RVG	Taiwan Semiconductor Corporation	DIODE, ZENER, 91V, 1000MW, %, SU Voltage - Zener (Nom) (Vz): 90.5V Tolerance: ±6.07% Power - Max: 1W Impedance (Max) (Zzt): 200 Ohms Current - Reverse Leakage @ Vr: 1µA @ 68V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	封装: DO-219AB	库存2,832
BZD27C27PHMQG	Taiwan Semiconductor Corporation	DIODE, ZENER, 27V, 1000MW, %, AE Voltage - Zener (Nom) (Vz): 27V Tolerance: ±7.03% Power - Max: 1W Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 1µA @ 20V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	封装: DO-219AB	库存5,152
BZD27C82P MHG	Taiwan Semiconductor Corporation	DIODE, ZENER, 82V, 1000MW, %, SU Voltage - Zener (Nom) (Vz): 82V Tolerance: ±6.09% Power - Max: 1W Impedance (Max) (Zzt): 200 Ohms Current - Reverse Leakage @ Vr: 1µA @ 62V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	封装: DO-219AB	库存4,560
BZD27C36P MHG	Taiwan Semiconductor Corporation	DIODE, ZENER, 36V, 1000MW, %, SU Voltage - Zener (Nom) (Vz): 36V Tolerance: ±5.55% Power - Max: 1W Impedance (Max) (Zzt): 40 Ohms Current - Reverse Leakage @ Vr: 1µA @ 27V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	封装: DO-219AB	库存2,960
BZD27C18P MHG	Taiwan Semiconductor Corporation	DIODE, ZENER, 18V, 1000MW, %, SU Voltage - Zener (Nom) (Vz): 17.95V Tolerance: ±6.4% Power - Max: 1W Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 1µA @ 13V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	封装: DO-219AB	库存4,704
BZD17C68P RUG	Taiwan Semiconductor Corporation	DIODE, ZENER, 68V, 800MW, %, SUB Voltage - Zener (Nom) (Vz): 68V Tolerance: ±5.88% Power - Max: 800mW Impedance (Max) (Zzt): 80 Ohms Current - Reverse Leakage @ Vr: 1µA @ 51V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	封装: DO-219AB	库存2,832
1N4750A R0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 27V, 1000MW, 5%, D Voltage - Zener (Nom) (Vz): 27V Tolerance: ±5% Power - Max: 1W Impedance (Max) (Zzt): 35 Ohms Current - Reverse Leakage @ Vr: 5µA @ 20.6V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41)	封装: DO-204AL, DO-41, Axial	库存2,400
BZT52B3V9S RRG	Taiwan Semiconductor Corporation	DIODE, ZENER, 3.9V, 200MW, 2%, S Voltage - Zener (Nom) (Vz): 3.9V Tolerance: ±2% Power - Max: 200mW Impedance (Max) (Zzt): 90 Ohms Current - Reverse Leakage @ Vr: 2.7µA @ 1V Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F	封装: SC-90, SOD-323F	库存3,904
BZX85C30 R0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 30V, 1300MW, 5%, D Voltage - Zener (Nom) (Vz): 30V Tolerance: ±5% Power - Max: 1.3W Impedance (Max) (Zzt): 30 Ohms Current - Reverse Leakage @ Vr: 500nA @ 22V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41)	封装: DO-204AL, DO-41, Axial	库存5,376
BZT55B24 L1G	Taiwan Semiconductor Corporation	DIODE, ZENER, 24V, 500MW, 2%, QM Voltage - Zener (Nom) (Vz): 24V Tolerance: ±2% Power - Max: 500mW Impedance (Max) (Zzt): 80 Ohms Current - Reverse Leakage @ Vr: 100nA @ 18V Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-80 Variant Supplier Device Package: Mini MELF	封装: SOD-80 Variant	库存6,464
BZV55C5V6 L1G	Taiwan Semiconductor Corporation	DIODE, ZENER, 5.6V, 500MW, 5%, M Voltage - Zener (Nom) (Vz): 5.6V Tolerance: ±5% Power - Max: 500mW Impedance (Max) (Zzt): 25 Ohms Current - Reverse Leakage @ Vr: 100nA @ 1V Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: Mini MELF	封装: DO-213AC, MINI-MELF, SOD-80	库存2,096
BZV55C10 L0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 10V, 500MW, 5%, MM Voltage - Zener (Nom) (Vz): 10V Tolerance: ±5% Power - Max: 500mW Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 100nA @ 7.5V Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: Mini MELF	封装: DO-213AC, MINI-MELF, SOD-80	库存2,448
DBLS207G C1G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 2A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A Current - Reverse Leakage @ Vr: 2µA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: DBLS	封装: 4-SMD, Gull Wing	库存2,768
ES1DLWH	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SOD123W Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 175°C	封装: -	库存100,647
TSM650N15CS	Taiwan Semiconductor Corporation	150V, 9A, SINGLE N-CHANNEL POWER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1783 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	封装: -	Request a Quote
HS1BFL	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A SOD123FL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: 11pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存44,298
RS3G-V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote
DBL153GH	Taiwan Semiconductor Corporation	DIODE BRIDGE 1.5A 200V DBL Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Current - Reverse Leakage @ Vr: 2 µA @ 200 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-DIP (0.300", 7.62mm) Supplier Device Package: DBL	封装: -	Request a Quote
PE1DAH	Taiwan Semiconductor Corporation	15NS, 1A, 200V, ULTRA FAST RECOV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 15 ns Current - Reverse Leakage @ Vr: 2 µA @ 200 V Capacitance @ Vr, F: 24pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 175°C	封装: -	库存44,700
S1MAL	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 1A THIN SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 1000 V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存19,260
TS10K80-A	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 800V 10A TS4K Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS4K Supplier Device Package: TS4K	封装: -	库存6,045
BZS55C24-RAG	Taiwan Semiconductor Corporation	DIODE ZENER 24V 500MW 1206 Voltage - Zener (Nom) (Vz): 24 V Tolerance: ±5% Power - Max: 500 mW Impedance (Max) (Zzt): 80 Ohms Current - Reverse Leakage @ Vr: 100 nA @ 18 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 1206 (3216 Metric) Supplier Device Package: 1206	封装: -	Request a Quote
ZM4728A	Taiwan Semiconductor Corporation	MELF, 1000MW, 5%, SMALL SIGNAL Z Voltage - Zener (Nom) (Vz): 3.3 V Tolerance: ±5% Power - Max: 1 W Impedance (Max) (Zzt): 10 Ohms Current - Reverse Leakage @ Vr: 100 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: MELF	封装: -	Request a Quote
BZY55B12-RBG	Taiwan Semiconductor Corporation	DIODE ZENER 12V 500MW 0805 Voltage - Zener (Nom) (Vz): 12 V Tolerance: ±2% Power - Max: 500 mW Impedance (Max) (Zzt): 20 Ohms Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 0805 (2012 Metric) Supplier Device Package: 0805	封装: -	Request a Quote
MBRF20L120CTH	Taiwan Semiconductor Corporation	DIODE ARR SCHOTT 120V ITO220AB Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120 V Current - Average Rectified (Io) (per Diode): 20A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 µA @ 120 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: ITO-220AB	封装: -	Request a Quote
HSJLWH	Taiwan Semiconductor Corporation	75NS, 0.8A, 600V, HIGH EFFICIENT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 800 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: 5pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存60,000
PUUP8DH	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 8A TO277A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 2 µA @ 200 V Capacitance @ Vr, F: 96pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	封装: -	库存52,575
S1KFS-MWG	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A SOD128 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 800 V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存46,170
TSM70N750CH	Taiwan Semiconductor Corporation	700V, 6A, SINGLE N-CHANNEL POWER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 1.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 (IPAK) Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA	封装: -	Request a Quote
RS1ALH	Taiwan Semiconductor Corporation	150NS, 0.8A, 50V, FAST RECOVERY Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote