页 5 - Rohm Semiconductor 产品 - 晶体管 - FET，MOSFET - 单 | 深圳黑森尔电子
联系我们
SalesDept@heisener.com +86-0755-87210559 ext.802
登入/注册
BOM
购物车 0

Rohm Semiconductor 产品 - 晶体管 - FET，MOSFET - 单

记录 1,247
页  5/42
图片
零件编号
制造商
描述
封装
库存
数量
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
R6524ENJTL
Rohm Semiconductor

MOSFET N-CH 650V 24A LPTS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 750µA
  • Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 245W (Tc)
  • Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封装: -
库存282
MOSFET (Metal Oxide)
650 V
24A (Tc)
10V
4V @ 750µA
70 nC @ 10 V
1650 pF @ 25 V
±20V
-
245W (Tc)
185mOhm @ 11.3A, 10V
150°C (TJ)
Surface Mount
LPTS
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
R6509ENXC7G
Rohm Semiconductor

650V 9A TO-220FM, LOW-NOISE POWE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 230µA
  • Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 48W (Tc)
  • Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack
封装: -
库存2,982
MOSFET (Metal Oxide)
650 V
9A (Ta)
10V
4V @ 230µA
24 nC @ 10 V
430 pF @ 25 V
±20V
-
48W (Tc)
585mOhm @ 2.8A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-3 Full Pack
R6524KNXC7G
Rohm Semiconductor

650V 24A TO-220FM, HIGH-SPEED SW

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 750µA
  • Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 74W (Tc)
  • Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack
封装: -
库存2,970
MOSFET (Metal Oxide)
650 V
24A (Tc)
10V
5V @ 750µA
45 nC @ 10 V
1850 pF @ 25 V
±20V
-
74W (Tc)
185mOhm @ 11.3A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-3 Full Pack
RD3L140SPFRATL
Rohm Semiconductor

MOSFET P-CH 60V 14A TO252

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 84mOhm @ 14A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封装: -
库存23,931
MOSFET (Metal Oxide)
60 V
14A (Ta)
4V, 10V
3V @ 1mA
27 nC @ 10 V
1900 pF @ 10 V
±20V
-
20W (Tc)
84mOhm @ 14A, 10V
150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
R6030JNZ4C13
Rohm Semiconductor

MOSFET N-CH 600V 30A TO247G

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 7V @ 5.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 370W (Tc)
  • Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247G
  • Package / Case: TO-247-3
封装: -
库存1,566
MOSFET (Metal Oxide)
600 V
30A (Tc)
15V
7V @ 5.5mA
74 nC @ 15 V
2500 pF @ 100 V
±30V
-
370W (Tc)
143mOhm @ 15A, 15V
-55°C ~ 150°C (TJ)
Through Hole
TO-247G
TO-247-3
R6024ENZ4C13
Rohm Semiconductor

MOSFET N-CH 600V 24A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 245W (Tc)
  • Rds On (Max) @ Id, Vgs: 165mOhm @ 24A, 15V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
封装: -
库存1,800
MOSFET (Metal Oxide)
600 V
24A (Tc)
10V, 15V
-
70 nC @ 15 V
-
±20V
-
245W (Tc)
165mOhm @ 24A, 15V
-
Through Hole
TO-247
TO-247-3
R6524KNZC17
Rohm Semiconductor

MOSFET N-CH 650V 24A TO3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 750µA
  • Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 74W (Tc)
  • Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
封装: -
库存900
MOSFET (Metal Oxide)
650 V
24A (Tc)
10V
5V @ 750µA
45 nC @ 10 V
1850 pF @ 25 V
±20V
-
74W (Tc)
185mOhm @ 11.3A, 10V
150°C (TJ)
Through Hole
TO-3PF
TO-3P-3 Full Pack
R6025JNZ4C13
Rohm Semiconductor

MOSFET N-CH 600V 25A TO247G

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 7V @ 4.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 306W (Tc)
  • Rds On (Max) @ Id, Vgs: 182mOhm @ 12.5A, 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247G
  • Package / Case: TO-247-3
封装: -
库存1,791
MOSFET (Metal Oxide)
600 V
25A (Tc)
15V
7V @ 4.5mA
57 nC @ 15 V
1900 pF @ 100 V
±30V
-
306W (Tc)
182mOhm @ 12.5A, 15V
-55°C ~ 150°C (TJ)
Through Hole
TO-247G
TO-247-3
RD3P200SNFRATL
Rohm Semiconductor

MOSFET N-CH 100V 20A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 46mOhm @ 20A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封装: -
库存18,834
MOSFET (Metal Oxide)
100 V
20A (Ta)
4V, 10V
2.5V @ 1mA
55 nC @ 10 V
2100 pF @ 25 V
±20V
-
20W (Tc)
46mOhm @ 20A, 10V
150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
R6012JNJGTL
Rohm Semiconductor

MOSFET N-CH 600V 12A LPTS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 7V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 160W (Tc)
  • Rds On (Max) @ Id, Vgs: 390mOhm @ 6A, 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封装: -
库存5,400
MOSFET (Metal Oxide)
600 V
12A (Tc)
15V
7V @ 2.5mA
28 nC @ 15 V
900 pF @ 100 V
±30V
-
160W (Tc)
390mOhm @ 6A, 15V
-55°C ~ 150°C (TJ)
Surface Mount
LPTS
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
R6520KNJTL
Rohm Semiconductor

MOSFET N-CH 650V 20A LPTS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 630µA
  • Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 231W (Tc)
  • Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封装: -
库存294
MOSFET (Metal Oxide)
650 V
20A (Tc)
10V
5V @ 630µA
40 nC @ 10 V
1550 pF @ 25 V
±20V
-
231W (Tc)
205mOhm @ 9.5A, 10V
150°C (TJ)
Surface Mount
LPTS
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SCT3060ARHRC15
Rohm Semiconductor

650V, 39A, 4-PIN THD, TRENCH-STR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5.6V @ 6.67mA
  • Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 500 V
  • Vgs (Max): +22V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 165W
  • Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L
  • Package / Case: TO-247-4
封装: -
库存1,347
MOSFET (Metal Oxide)
650 V
39A (Tc)
18V
5.6V @ 6.67mA
58 nC @ 18 V
852 pF @ 500 V
+22V, -4V
-
165W
78mOhm @ 13A, 18V
175°C (TJ)
Through Hole
TO-247-4L
TO-247-4
RQ1E070RPHZGTR
Rohm Semiconductor

PCH -30V -7A SMALL SIGNAL MOSFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 17mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT8
  • Package / Case: 8-SMD, Flat Lead
封装: -
库存9,000
MOSFET (Metal Oxide)
30 V
7A (Ta)
4V, 10V
2.5V @ 1mA
26 nC @ 4 V
2700 pF @ 10 V
±20V
-
1.1W (Ta)
17mOhm @ 7A, 10V
-55°C ~ 150°C
Surface Mount
TSMT8
8-SMD, Flat Lead
R6030ENZ4C13
Rohm Semiconductor

MOSFET N-CH 600V 30A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 305W (Tc)
  • Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
封装: -
库存57
MOSFET (Metal Oxide)
600 V
30A (Tc)
10V
4V @ 1mA
85 nC @ 10 V
2100 pF @ 25 V
±20V
-
305W (Tc)
130mOhm @ 14.5A, 10V
150°C (TJ)
Through Hole
TO-247
TO-247-3
RJ1L08CGNTLL
Rohm Semiconductor

MOSFET N-CH 60V 80A LPTL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 96W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.7mOhm @ 80A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTL
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封装: -
库存5,940
MOSFET (Metal Oxide)
60 V
80A (Tc)
4.5V, 10V
2.5V @ 50µA
55 nC @ 10 V
2600 pF @ 30 V
±20V
-
96W (Tc)
7.7mOhm @ 80A, 10V
150°C (TJ)
Surface Mount
LPTL
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
RS6L120BHTB1
Rohm Semiconductor

NCH 60V 150A, HSOP8, POWER MOSFE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 150A (Ta), 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.7mOhm @ 90A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSOP
  • Package / Case: 8-PowerTDFN
封装: -
Request a Quote
MOSFET (Metal Oxide)
60 V
150A (Ta), 120A (Tc)
6V, 10V
4V @ 1mA
51 nC @ 10 V
4080 pF @ 30 V
±20V
-
3W (Ta), 104W (Tc)
2.7mOhm @ 90A, 10V
150°C (TJ)
Surface Mount
8-HSOP
8-PowerTDFN
R6027YNZ4C13
Rohm Semiconductor

NCH 600V 27A, TO-247G, POWER MOS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
  • Vgs(th) (Max) @ Id: 6V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 245W (Tc)
  • Rds On (Max) @ Id, Vgs: 135mOhm @ 7A, 12V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247G
  • Package / Case: TO-247-3
封装: -
库存1,800
MOSFET (Metal Oxide)
600 V
27A (Tc)
10V, 12V
6V @ 2mA
40 nC @ 10 V
1670 pF @ 100 V
±30V
-
245W (Tc)
135mOhm @ 7A, 12V
150°C (TJ)
Through Hole
TO-247G
TO-247-3
R6520KNZC8
Rohm Semiconductor

MOSFET N-CH 650V 20A TO3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 630µA
  • Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
封装: -
Request a Quote
MOSFET (Metal Oxide)
650 V
20A (Tc)
10V
5V @ 630µA
40 nC @ 10 V
1550 pF @ 25 V
±20V
-
68W (Tc)
205mOhm @ 9.5A, 10V
150°C (TJ)
Through Hole
TO-3PF
TO-3P-3 Full Pack
R6022YNXC7G
Rohm Semiconductor

NCH 600V 13A, TO-220FM, POWER MO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
  • Vgs(th) (Max) @ Id: 6V @ 1.8mA
  • Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 165mOhm @ 6.5A, 12V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack
封装: -
库存3,000
MOSFET (Metal Oxide)
600 V
13A (Tc)
10V, 12V
6V @ 1.8mA
33 nC @ 10 V
1400 pF @ 100 V
±30V
-
65W (Tc)
165mOhm @ 6.5A, 12V
150°C (TJ)
Through Hole
TO-220FM
TO-220-3 Full Pack
R6504ENXC7G
Rohm Semiconductor

650V 4A TO-220FM, LOW-NOISE POWE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 130µA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack
封装: -
库存3,000
MOSFET (Metal Oxide)
650 V
4A (Ta)
10V
4V @ 130µA
15 nC @ 10 V
220 pF @ 25 V
±20V
-
40W (Tc)
1.05Ohm @ 1.5A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-3 Full Pack
RF4P025ATTCR
Rohm Semiconductor

PCH -100V -2.5A POWER MOSFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 19.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 260mOhm @ 2.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: HUML2020L8
  • Package / Case: 8-PowerUDFN
封装: -
库存8,703
MOSFET (Metal Oxide)
100 V
2.5A (Ta)
4.5V, 10V
2.5V @ 1mA
19.7 nC @ 10 V
590 pF @ 50 V
±20V
-
2W (Ta)
260mOhm @ 2.5A, 10V
150°C (TJ)
Surface Mount
HUML2020L8
8-PowerUDFN
R6025ANZFL1C8
Rohm Semiconductor

MOSFET N-CH 600V 25A TO3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 10 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 150mOhm @ 12.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
封装: -
Request a Quote
MOSFET (Metal Oxide)
600 V
25A (Tc)
10V
4.5V @ 1mA
88 nC @ 10 V
3250 pF @ 10 V
±30V
-
150W (Tc)
150mOhm @ 12.5A, 10V
150°C (TJ)
Through Hole
TO-3PF
TO-3P-3 Full Pack
R6004JND3TL1
Rohm Semiconductor

MOSFET N-CH 600V 4A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 7V @ 450µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 15V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封装: -
库存7,500
MOSFET (Metal Oxide)
600 V
4A (Tc)
15V
7V @ 450µA
10.5 nC @ 15 V
260 pF @ 100 V
±30V
-
60W (Tc)
1.43Ohm @ 2A, 15V
150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
RS6L120BGTB1
Rohm Semiconductor

NCH 60V 120A, HSOP8, POWER MOSFE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3520 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.7mOhm @ 90A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSOP
  • Package / Case: 8-PowerTDFN
封装: -
库存6,708
MOSFET (Metal Oxide)
60 V
120A (Tc)
4.5V, 10V
2.5V @ 1mA
51 nC @ 10 V
3520 pF @ 30 V
±20V
-
104W (Tc)
2.7mOhm @ 90A, 10V
150°C (TJ)
Surface Mount
8-HSOP
8-PowerTDFN
RSQ035P03HZGTR
Rohm Semiconductor

MOSFET P-CH 30V 3.5A TSMT6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 950mW (Ta)
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 3.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT6 (SC-95)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
封装: -
库存9,000
MOSFET (Metal Oxide)
30 V
3.5A (Ta)
4V, 10V
2.5V @ 1mA
9.2 nC @ 5 V
780 pF @ 10 V
±20V
-
950mW (Ta)
65mOhm @ 3.5A, 10V
150°C (TJ)
Surface Mount
TSMT6 (SC-95)
SOT-23-6 Thin, TSOT-23-6
RX3R10BBHC16
Rohm Semiconductor

NCH 150V 105A, TO-220AB, POWER M

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7550 pF @ 75 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 181W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.8mOhm @ 50A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: -
库存2,964
MOSFET (Metal Oxide)
150 V
105A (Tc)
6V, 10V
4V @ 1mA
130 nC @ 10 V
7550 pF @ 75 V
±20V
-
181W (Tc)
8.8mOhm @ 50A, 10V
150°C (TJ)
Through Hole
TO-220AB
TO-220-3
R6050JNZC17
Rohm Semiconductor

MOSFET N-CH 600V 50A TO3PF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 7V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 120W (Tc)
  • Rds On (Max) @ Id, Vgs: 83mOhm @ 25A, 15V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
封装: -
库存759
MOSFET (Metal Oxide)
600 V
50A (Tc)
15V
7V @ 5mA
120 nC @ 15 V
4500 pF @ 100 V
±30V
-
120W (Tc)
83mOhm @ 25A, 15V
150°C (TJ)
Through Hole
TO-3PF
TO-3P-3 Full Pack
RH6G040BGTB1
Rohm Semiconductor

NCH 40V 95A, HSMT8, POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 59W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.6mOhm @ 40A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSMT (3.2x3)
  • Package / Case: 8-PowerVDFN
封装: -
库存15,843
MOSFET (Metal Oxide)
40 V
40A (Tc)
4.5V, 10V
2.5V @ 1mA
25 nC @ 10 V
1580 pF @ 20 V
±20V
-
59W (Tc)
3.6mOhm @ 40A, 10V
150°C (TJ)
Surface Mount
8-HSMT (3.2x3)
8-PowerVDFN
R6020KNZ4C13
Rohm Semiconductor

MOSFET N-CH 600V 20A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 231W (Tc)
  • Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
封装: -
库存1,266
MOSFET (Metal Oxide)
600 V
20A (Tc)
10V
5V @ 1mA
40 nC @ 10 V
1550 pF @ 25 V
±20V
-
231W (Tc)
196mOhm @ 9.5A, 10V
150°C (TJ)
Through Hole
TO-247
TO-247-3
RTR020P02HZGTL
Rohm Semiconductor

MOSFET P-CH 20V 2A TSMT3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT3
  • Package / Case: SC-96
封装: -
库存43,062
MOSFET (Metal Oxide)
20 V
2A (Ta)
2.5V, 4.5V
2V @ 1mA
4.9 nC @ 4.5 V
430 pF @ 10 V
±12V
-
700mW (Ta)
135mOhm @ 2A, 4.5V
150°C (TJ)
Surface Mount
TSMT3
SC-96