图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Rohm Semiconductor |
NCH 60V 14A POWER MOSFET: RS3L14
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封装: - |
库存7,470 |
|
MOSFET (Metal Oxide) | 60 V | 14A (Ta) | 4.5V, 10V | 2.7V @ 500µA | 58 nC @ 10 V | 2980 pF @ 30 V | ±20V | - | 1.4W (Ta) | 6.5mOhm @ 14A, 10V | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
NCH 30V 3..5A SMALL SIGNAL MOSFE
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封装: - |
库存8,700 |
|
MOSFET (Metal Oxide) | 30 V | 3.5A (Ta) | 4V, 10V | 2.5V @ 1mA | 3.3 nC @ 5 V | 180 pF @ 10 V | ±20V | - | 910mW (Ta) | 50mOhm @ 3.5A, 10V | 150°C (TJ) | Surface Mount | TUMT6 | 6-SMD, Flat Leads |
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Rohm Semiconductor |
MOSFET N-CH 650V 35A TO3
|
封装: - |
库存900 |
|
MOSFET (Metal Oxide) | 650 V | 35A (Tc) | 10V | 4V @ 1.21mA | 110 nC @ 10 V | 2600 pF @ 25 V | ±20V | - | 102W (Tc) | 115mOhm @ 18.1A, 10V | 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 600V 24A TO3PF
|
封装: - |
库存900 |
|
MOSFET (Metal Oxide) | 600 V | 24A (Tc) | 10V | 5V @ 1mA | 45 nC @ 10 V | 2000 pF @ 25 V | ±20V | - | 74W (Tc) | 165mOhm @ 11.3A, 10V | 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 30V 11A/24A 8HSMT
|
封装: - |
库存41,604 |
|
MOSFET (Metal Oxide) | 30 V | 11A (Ta), 24A (Tc) | 2.5V, 4.5V | 1.5V @ 1mA | 13.5 nC @ 4.5 V | 1500 pF @ 15 V | ±12V | - | 2W (Ta) | 11.7mOhm @ 11A, 4.5V | 150°C (TJ) | Surface Mount | 8-HSMT (3.2x3) | 8-PowerVDFN |
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Rohm Semiconductor |
MOSFET N-CH 650V 20A TO3
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封装: - |
库存900 |
|
MOSFET (Metal Oxide) | 650 V | 20A (Tc) | 10V | 4V @ 630µA | 61 nC @ 10 V | 1400 pF @ 25 V | ±20V | - | 68W (Tc) | 205mOhm @ 9.5A, 10V | 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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Rohm Semiconductor |
NCH 20V 3.0A, SMM1006, SMM1006:
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封装: - |
库存44,607 |
|
MOSFET (Metal Oxide) | 20 V | 3A (Ta) | 1.8V, 4.5V | 1.5V @ 1mA | 1.5 nC @ 4.5 V | 150 pF @ 10 V | +7V, -0.2V | - | 1W (Ta) | 140mOhm @ 3A, 4.5V | 150°C (TJ) | Surface Mount | DSN1006-3 | 3-XFDFN |
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Rohm Semiconductor |
SICFET N-CH 1200V 31A TO247N
|
封装: - |
库存2,526 |
|
SiCFET (Silicon Carbide) | 1200 V | 31A (Tc) | 18V | 5.6V @ 5mA | 60 nC @ 18 V | 785 pF @ 800 V | +22V, -4V | - | 165W | 104mOhm @ 10A, 18V | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
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Rohm Semiconductor |
NCH 60V 2.5A, TUMT6, POWER MOSFE
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 2.5A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 3.1 nC @ 10 V | 135 pF @ 30 V | ±20V | - | 910mW (Ta) | 91mOhm @ 2.5A, 10V | 150°C (TJ) | Surface Mount | TUMT6 | 6-SMD, Flat Leads |
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Rohm Semiconductor |
MOSFET N-CH 600V 4A LPTS
|
封装: - |
库存2,979 |
|
MOSFET (Metal Oxide) | 600 V | 4A (Tc) | 15V | 7V @ 450µA | 10.5 nC @ 15 V | 260 pF @ 100 V | ±30V | - | 60W (Tc) | 1.43Ohm @ 2A, 15V | -55°C ~ 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
NCH 600V 49A, TO-247G, POWER MOS
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封装: - |
库存1,800 |
|
MOSFET (Metal Oxide) | 600 V | 49A (Tc) | 10V, 12V | 6V @ 2.9mA | 65 nC @ 10 V | 2940 pF @ 100 V | ±30V | - | 448W (Tc) | 82mOhm @ 11A, 12V | 150°C (TJ) | Through Hole | TO-247G | TO-247-3 |
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Rohm Semiconductor |
MOSFET N-CH 30V 4.5A TSMT6
|
封装: - |
库存8,793 |
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MOSFET (Metal Oxide) | 30 V | 4.5A (Ta) | 2.5V, 4.5V | 1.5V @ 1mA | 10.7 nC @ 4.5 V | 540 pF @ 10 V | ±12V | - | 950mW (Ta) | 43mOhm @ 4.5A, 4.5V | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Rohm Semiconductor |
NCH 40V 180A, TO-220AB, POWER MO
|
封装: - |
库存8,709 |
|
MOSFET (Metal Oxide) | 40 V | 180A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 168 nC @ 10 V | 12000 pF @ 20 V | ±20V | - | 125W (Tc) | 1.64mOhm @ 90A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Rohm Semiconductor |
MOSFET N-CH 600V 35A TO247
|
封装: - |
库存1,740 |
|
MOSFET (Metal Oxide) | 600 V | 35A (Tc) | 10V | 5V @ 1mA | 72 nC @ 10 V | 3000 pF @ 25 V | ±20V | - | 379W (Tc) | 102mOhm @ 18.1A, 10V | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Rohm Semiconductor |
SICFET N-CH 650V 21A TO263-7
|
封装: - |
库存2,436 |
|
SiCFET (Silicon Carbide) | 650 V | 21A (Tc) | - | 5.6V @ 3.33mA | 38 nC @ 18 V | 460 pF @ 500 V | +22V, -4V | - | 100W | 156mOhm @ 6.7A, 18V | 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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Rohm Semiconductor |
MOSFET N-CH 650V 30A TO3
|
封装: - |
库存900 |
|
MOSFET (Metal Oxide) | 650 V | 30A (Tc) | 10V | 4V @ 960µA | 90 nC @ 10 V | 2100 pF @ 25 V | ±20V | - | 86W (Tc) | 140mOhm @ 14.5A, 10V | 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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Rohm Semiconductor |
NCH 600V 61A, TO-247, POWER MOSF
|
封装: - |
库存1,788 |
|
MOSFET (Metal Oxide) | 600 V | 61A (Tc) | 10V, 12V | 6V @ 3.5mA | 76 nC @ 10 V | 3700 pF @ 100 V | ±30V | - | 568W (Tc) | 60mOhm @ 13A, 12V | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Rohm Semiconductor |
NCH 100V 35A, TO-252, POWER MOSF
|
封装: - |
库存6,906 |
|
MOSFET (Metal Oxide) | 100 V | 35A (Tc) | 6V, 10V | 4V @ 1mA | 12.4 nC @ 10 V | 800 pF @ 50 V | ±20V | - | 50W (Tc) | 23mOhm @ 35A, 10V | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
750V, 45M, 4-PIN THD, TRENCH-STR
|
封装: - |
库存14,583 |
|
SiCFET (Silicon Carbide) | 750 V | 34A (Tc) | 18V | 4.8V @ 8.89mA | 63 nC @ 18 V | 1460 pF @ 500 V | +21V, -4V | - | 115W | 59mOhm @ 17A, 18V | 175°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
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Rohm Semiconductor |
MOSFET P-CH 12V 5A TSMT6
|
封装: - |
库存8,814 |
|
MOSFET (Metal Oxide) | 12 V | 5A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 35 nC @ 4.5 V | 2850 pF @ 6 V | ±10V | - | 950mW (Ta) | 26mOhm @ 5A, 4.5V | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Rohm Semiconductor |
PCH -100V -7A POWER MOSFET: RS3P
|
封装: - |
库存9,000 |
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MOSFET (Metal Oxide) | 100 V | 7A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 115 nC @ 10 V | 5150 pF @ 50 V | ±20V | - | 2W (Ta) | 36mOhm @ 7A, 10V | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
650V 20A TO-247, LOW-NOISE POWER
|
封装: - |
库存3,459 |
|
MOSFET (Metal Oxide) | 650 V | 20A (Tc) | 10V | 4V @ 630µA | 61 nC @ 10 V | 1400 pF @ 25 V | ±20V | - | 231W (Tc) | 205mOhm @ 9.5A, 10V | 150°C (TJ) | Through Hole | TO-247G | TO-247-3 |
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Rohm Semiconductor |
MOSFET N-CH 600V 9A LPTS
|
封装: - |
库存6,000 |
|
MOSFET (Metal Oxide) | 600 V | 9A (Tc) | 15V | 7V @ 1.38mA | 22 nC @ 15 V | 645 pF @ 100 V | ±30V | - | 125W (Tc) | 585mOhm @ 4.5A, 15V | -55°C ~ 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
650V 11A TO-220FM, HIGH-SPEED SW
|
封装: - |
库存11,952 |
|
MOSFET (Metal Oxide) | 650 V | 11A (Ta) | 10V | 5V @ 320µA | 22 nC @ 10 V | 760 pF @ 25 V | ±20V | - | 53W (Tc) | 400mOhm @ 3.8A, 10V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 45V 2A TSMT6
|
封装: - |
库存2,943 |
|
MOSFET (Metal Oxide) | 45 V | 2A (Ta) | 2.5V, 4.5V | 1.5V @ 1mA | 2.3 nC @ 4.5 V | 150 pF @ 10 V | ±12V | - | 950mW (Ta) | 190mOhm @ 2A, 4.5V | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Rohm Semiconductor |
MOSFET N-CH 100V 40A LPTS
|
封装: - |
库存33 |
|
MOSFET (Metal Oxide) | 100 V | 40A (Tc) | 4V, 10V | 2.5V @ 1mA | 90 nC @ 10 V | 3600 pF @ 25 V | ±20V | - | 1.35W (Ta), 50W (Tc) | 27mOhm @ 40A, 10V | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
MOSFET N-CH 40V 45A LPTS
|
封装: - |
库存2,400 |
|
MOSFET (Metal Oxide) | 40 V | 45A (Tc) | 10V | 3V @ 1mA | 43 nC @ 10 V | 2400 pF @ 25 V | ±20V | - | 50W (Tc) | 13.5mOhm @ 25A, 10V | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
MOSFET N-CH 600V 47A TO247
|
封装: - |
库存9 |
|
MOSFET (Metal Oxide) | 600 V | 47A (Tc) | 10V | 4V @ 1mA | 145 nC @ 10 V | 3850 pF @ 25 V | ±20V | - | 481W (Tc) | 72mOhm @ 25.8A, 10V | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Rohm Semiconductor |
NCH 600V 9A TO-252, HIGH-SPEED S
|
封装: - |
库存7,500 |
|
MOSFET (Metal Oxide) | 600 V | 9A (Tc) | 10V | 5V @ 1mA | 16.5 nC @ 10 V | 540 pF @ 25 V | ±20V | - | 94W (Tc) | 535mOhm @ 2.8A, 10V | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
1200V, 10A, THD, SILICON-CARBIDE
|
封装: - |
库存1,320 |
|
SiCFET (Silicon Carbide) | 1200 V | 10A (Tc) | 18V | 4V @ 900µA | 27 nC @ 18 V | 463 pF @ 800 V | +22V, -6V | - | 85W (Tc) | 585mOhm @ 3A, 18V | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |