Rohm Semiconductor 产品 - 晶体管 - FET，MOSFET - 阵列

SH8K25GZ0TB1

Rohm Semiconductor

MOSFET 2N-CH 40V 5.2A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
• Rds On (Max) @ Id, Vgs: 85mOhm @ 5.2A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 10V
• Power - Max: 1.4W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

封装: -

SH8K32GZETB

Rohm Semiconductor

MOSFET 2N-CH 60V 4.5A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
• Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
• Power - Max: 1.4W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

封装: -

QH8KA3TCR

Rohm Semiconductor

MOSFET 2N-CH 30V 9A TSMT8

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
• Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
• Power - Max: 1.5W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SMD, Flat Lead
• Supplier Device Package: TSMT8

封装: -

SP8M24FRATB

Rohm Semiconductor

MOSFET N/P-CH 45V 4.5A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 45V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.5A (Ta)
• Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V, 18.2nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, 1700pF @ 10V
• Power - Max: 2W
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

封装: -

SP8M24HZGTB

Rohm Semiconductor

MOSFET N/P-CH 45V 4.5A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 45V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.5A (Ta)
• Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V, 18.2nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, 1700pF @ 10V
• Power - Max: 1.4W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

封装: -

HT8KE5TB1

Rohm Semiconductor

MOSFET 2N-CH 100V 2.5A/7A 8HSMT

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 7A (Tc)
• Rds On (Max) @ Id, Vgs: 193mOhm @ 2.5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
• Power - Max: 2W (Ta), 13W (Tc)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVDFN
• Supplier Device Package: 8-HSMT (3.2x3)

封装: -

SH8KA7GZETB

Rohm Semiconductor

MOSFET 2N-CH 30V 15A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
• Rds On (Max) @ Id, Vgs: 9.3mOhm @ 15A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3320pF @ 15V
• Power - Max: 2W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

封装: -

SH8K10SGZETB

Rohm Semiconductor

MOSFET 2N-CH 30V 7A/8.5A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 8.5A (Ta)
• Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V, 19.6mOhm @ 8.5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 5V, 17.8nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V, 830pF @ 10V
• Power - Max: 1.4W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

封装: -

SP8M21FRATB

Rohm Semiconductor

MOSFET N/P-CH 45V 6A/4A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 45V
• Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta)
• Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V, 28nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, 2400pF @ 10V
• Power - Max: 2W
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

封装: -

SP8M21HZGTB

Rohm Semiconductor

MOSFET N/P-CH 45V 6A/4A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 45V
• Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta)
• Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V, 28nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, 2400pF @10V
• Power - Max: 2W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

封装: -

SP8M4TB

Rohm Semiconductor

MOSFET 30V 9A/7A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 9A, 7A
• Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
• Power - Max: 2W (Ta)
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

封装: -

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HP8M51TB1

Rohm Semiconductor

MOSFET N/P-CH 100V 4.5A 8HSOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
• Rds On (Max) @ Id, Vgs: 170mOhm @ 4.5A, 10V, 290mOhm @ 4.5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 26.2nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 50V, 1430pF @ 50V
• Power - Max: 3W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Supplier Device Package: 8-HSOP

封装: -

US5K3TR

Rohm Semiconductor

MOSFET 2N-CH 30V 1.5A TUMT5

• FET Type: -
• FET Feature: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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SH8MB4TB1

Rohm Semiconductor

40V 4.5A/5.5A, DUAL NCH+PCH, SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 5.5A (Ta)
• Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V, 46mOhm @ 5.5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V, 17.2nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V, 920pF @ 20V
• Power - Max: 2W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

封装: -

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UT6KB5TCR

Rohm Semiconductor

MOSFET 2N-CH 40V 5A HUML2020L8

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
• Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V
• Power - Max: 2W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-PowerUDFN
• Supplier Device Package: HUML2020L8

封装: -

SP8J62TB1

Rohm Semiconductor

MOSFET 2P-CH 30V 8SOP

• FET Type: -
• FET Feature: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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SH8MB5TB1

Rohm Semiconductor

MOSFET N/P-CH 40V 8.5A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
• Rds On (Max) @ Id, Vgs: 19.4mOhm @ 8.5A, 10V, 16.8mOhm @ 8.5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 20V, 51nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V, 2870pF @ 20V
• Power - Max: 2W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

封装: -

BSM400D12P2G003

Rohm Semiconductor

SIC 2N-CH 1200V 400A MODULE

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 400A (Tc)
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: 4V @ 85mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 38000pF @ 10V
• Power - Max: 2450W (Tc)
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: -
• Package / Case: Module
• Supplier Device Package: Module

封装: -

BSM600D12P4G103

Rohm Semiconductor

SIC 2N-CH 1200V 567A MODULE

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 567A (Tc)
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: 4.8V @ 291.2mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 59000pF @ 10V
• Power - Max: 1.78kW (Tc)
• Operating Temperature: 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

封装: -

HT8KC5TB1

Rohm Semiconductor

60V 10A, DUAL NCH+NCH, HSMT8, PO

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 10A (Tc)
• Rds On (Max) @ Id, Vgs: 90mOhm @ 3.5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V
• Power - Max: 2W (Ta), 13W (Tc)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVDFN
• Supplier Device Package: 8-HSMT (3.2x3)

封装: -

SH8KE6TB1

Rohm Semiconductor

MOSFET 2N-CH 100V 4.5A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
• Rds On (Max) @ Id, Vgs: 58mOhm @ 4.5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 50V
• Power - Max: 1.4W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

封装: -

US6M2GTR

Rohm Semiconductor

MOSFET N/P-CH 30V/20V 1.5A TUMT6

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V, 20V
• Current - Continuous Drain (Id) @ 25°C: 1.5A, 1A
• Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V, 390mOhm @ 1A, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 1mA, 2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V, 2.1nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V, 150pF @ 10V
• Power - Max: 1W
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Package / Case: 6-SMD, Flat Leads
• Supplier Device Package: TUMT6

封装: -

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SH8KA1GZETB

Rohm Semiconductor

MOSFET 2N-CH 30V 4.5A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
• Rds On (Max) @ Id, Vgs: 80mOhm @ 4.5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 125pf @ 15V
• Power - Max: 2W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

封装: -

QH8ME5TCR

Rohm Semiconductor

100V 2A, DUAL NCH+PCH, TSMT8

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
• Rds On (Max) @ Id, Vgs: 202mOhm @ 2A, 10V, 270mOhm @ 2A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V, 19.7nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V, 590pF @ 50V
• Power - Max: 1.1W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SMD, Flat Lead
• Supplier Device Package: TSMT8

封装: -

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SH8JB5TB1

Rohm Semiconductor

MOSFET 2P-CH 40V 8.5A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
• Rds On (Max) @ Id, Vgs: 15.3mOhm @ 8.5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2870pF @ 20V
• Power - Max: 1.4W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

封装: -

SH8KE7TB1

Rohm Semiconductor

MOSFET 2N-CH 100V 8A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
• Rds On (Max) @ Id, Vgs: 20.9mOhm @ 8A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 19.8nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 50V
• Power - Max: 2W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

封装: -

HT8KC6TB1

Rohm Semiconductor

60V 15A, DUAL NCH+NCH, HSMT8, PO

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 15A (Tc)
• Rds On (Max) @ Id, Vgs: 29mOhm @ 6.5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V
• Power - Max: 2W (Ta), 14W (Tc)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVDFN
• Supplier Device Package: 8-HSMT (3.2x3)

封装: -

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SP8M3FU6TB1

Rohm Semiconductor

MOSFET N/P-CH 30V 5A/4.5A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 4.5A (Ta)
• Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V, 56mOhm @ 4.5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V, 8.5nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V, 850pF @ 10V
• Power - Max: 2W (Ta)
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

封装: -

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SP8M5FRATB

Rohm Semiconductor

MOSFET N/P-CH 30V 6A/7A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 7A (Ta)
• Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, 28mOhm @ 7A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V, 25nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V, 2600pF @ 10V
• Power - Max: 2W
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

封装: -

QH8JE5TCR

Rohm Semiconductor

-100V DUAL PCH+PCH, TSMT8, POWER

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
• Rds On (Max) @ Id, Vgs: 270mOhm @ 2A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 19.7nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 50V
• Power - Max: 1.1W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SMD, Flat Lead
• Supplier Device Package: TSMT8

封装: -

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