ON Semiconductor 产品 - 晶体管 - FET，MOSFET - 单

5LP01C-TB-H

ON Semiconductor

MOSFET P-CH 50V 70MA CP

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 50V
• Current - Continuous Drain (Id) @ 25°C: 70mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7.4pF @ 10V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 250mW (Ta)
• Rds On (Max) @ Id, Vgs: 23 Ohm @ 40mA, 4V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 3-CP
• Package / Case: TO-236-3, SC-59, SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

3LP01SS-TL-H

ON Semiconductor

MOSFET P-CH 30V 0.1A SMCP

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 1.43nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7.5pF @ 10V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 150mW (Ta)
• Rds On (Max) @ Id, Vgs: 10.4 Ohm @ 50mA, 4V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SMCP
• Package / Case: SC-75, SOT-416

封装: SC-75, SOT-416

3LN01SS-TL-H

ON Semiconductor

MOSFET N-CH 30V 150MA SMCP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 10V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 150mW (Ta)
• Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 80mA, 4V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SMCP
• Package / Case: SC-75, SOT-416

封装: SC-75, SOT-416

NVA4001NT1G

ON Semiconductor

MOSFET N-CH 20V SC75

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 238mA (Tj)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 300mW (Tj)
• Rds On (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SC-75, SOT-416
• Package / Case: SC-75, SOT-416

封装: SC-75, SOT-416

NTK3139PT5G

ON Semiconductor

MOSFET P-CH 20V 660MA SOT-723

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 16V
• Vgs (Max): ±6V
• FET Feature: -
• Power Dissipation (Max): 310mW (Ta)
• Rds On (Max) @ Id, Vgs: 480 mOhm @ 780mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-723
• Package / Case: SOT-723

封装: SOT-723

NVS4001NT1G

ON Semiconductor

MOSFET N-CH 30V 0.27A SC70

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
• Vgs(th) (Max) @ Id: 1.5V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 330mW (Ta)
• Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SC-70-3 (SOT323)
• Package / Case: SC-70, SOT-323

封装: SC-70, SOT-323

5LP01M-TL-H

ON Semiconductor

MOSFET P-CH 50V 70MA MCP

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 50V
• Current - Continuous Drain (Id) @ 25°C: 70mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7.4pF @ 10V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 150mW (Ta)
• Rds On (Max) @ Id, Vgs: 23 Ohm @ 40mA, 4V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 3-MCP
• Package / Case: SC-70, SOT-323

封装: SC-70, SOT-323

NVTA7002NT1G

ON Semiconductor

MOSFET N-CH 30V 0.154A SC75-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 154mA (Tj)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 300mW (Tj)
• Rds On (Max) @ Id, Vgs: 7 Ohm @ 154mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SC-75
• Package / Case: SC-75, SOT-416

封装: SC-75, SOT-416

NTK3043NT5G

ON Semiconductor

MOSFET N-CH 20V 210MA SOT-723

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.65V, 4.5V
• Vgs(th) (Max) @ Id: 1.3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 310mW (Ta)
• Rds On (Max) @ Id, Vgs: 3.4 Ohm @ 10mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-723
• Package / Case: SOT-723

封装: SOT-723

BVSS123LT1G

ON Semiconductor

MOSFET N-CH 100V 170MA SOT-23-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 2.8V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 225mW (Ta)
• Rds On (Max) @ Id, Vgs: 6 Ohm @ 100mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

MMBFV170LT3G

ON Semiconductor

MOSFET N-CH 60V 0.5A SOT23

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3 (TO-236)
• Package / Case: TO-236-3, SC-59, SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

NTR5105PT1G

ON Semiconductor

MOSFET P-CH 60V 0.196A SOT23

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 196mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 1nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 30.3pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 347mW (Ta)
• Rds On (Max) @ Id, Vgs: 5 Ohm @ 100mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3 (TO-236)
• Package / Case: TO-236-3, SC-59, SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

2SK3746-1E

ON Semiconductor

MOSFET N-CH 1500V 2A

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1500V
• Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 37.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 110W (Tc)
• Rds On (Max) @ Id, Vgs: 13 Ohm @ 1A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3P-3L
• Package / Case: TO-3P-3, SC-65-3

封装: TO-3P-3, SC-65-3

NVMFS5C604NLWFAFT1G

ON Semiconductor

MOSFET N-CH 60V 287A 5DFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 287A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 52nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 200W (Tc)
• Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 5-DFN (5x6) (8-SOFL)
• Package / Case: 8-PowerTDFN, 5 Leads

封装: 8-PowerTDFN, 5 Leads

NVMFS5C404NLWFAFT1G

ON Semiconductor

MOSFET N-CH 40V 370A 5DFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 370A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 81nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 12168pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 200W (Tc)
• Rds On (Max) @ Id, Vgs: 0.67 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 5-DFN (5x6) (8-SOFL)
• Package / Case: 8-PowerTDFN, 5 Leads

封装: 8-PowerTDFN, 5 Leads

NVMFS5C604NLAFT1G

ON Semiconductor

MOSFET N-CH 60V 287A 5DFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 287A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 52nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 200W (Tc)
• Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 5-DFN (5x6) (8-SOFL)
• Package / Case: 8-PowerTDFN, 5 Leads

封装: 8-PowerTDFN, 5 Leads

NVMFS5C404NT1G

ON Semiconductor

MOSFET N-CH 40V 49A SO8FL

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
• Rds On (Max) @ Id, Vgs: 0.7 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 5-DFN (5x6) (8-SOFL)
• Package / Case: 8-PowerTDFN

封装: 8-PowerTDFN

NDF11N50ZH

ON Semiconductor

MOSFET N-CH 500V 12A TO220FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1645pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 39W (Tc)
• Rds On (Max) @ Id, Vgs: 520 mOhm @ 4.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220FP
• Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

NVD5C434NT4G

ON Semiconductor

MOSFET N-CH 40V 163A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 163A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 80.6nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 117W (Tc)
• Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

NTD5C446NT4G

ON Semiconductor

TRENCH 6 40V FET

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封装: -

NVD5C446NT4G

ON Semiconductor

MOSFET N-CH 40V 101A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 101A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 34.3nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 101W (Tc)
• Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

NVMFS5C670NLWFAFT1G

ON Semiconductor

TRENCH 6 60V FET

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封装: -

NVTFS5C453NLWFTAG

ON Semiconductor

TRENCH 6 40V FET

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封装: -

NVTFS5C658NLWFTAG

ON Semiconductor

MOSFET N-CH 60V 109A 8WDFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 109A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1935pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 114W (Tc)
• Rds On (Max) @ Id, Vgs: 5 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-WDFN (3.3x3.3)
• Package / Case: 8-PowerWDFN

封装: 8-PowerWDFN

NTMFS5C682NLT1G

ON Semiconductor

TRENCH 6 60V FET

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封装: -

NVF2955T1G

ON Semiconductor

MOSFET P-CH 60V 2.6A SOT223

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 492pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 170 mOhm @ 750mA, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-223 (TO-261)
• Package / Case: TO-261-4, TO-261AA

封装: TO-261-4, TO-261AA

NVMFS5C673NLWFAFT1G

ON Semiconductor

TRENCH 6 60V FET

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封装: -

NVTFS5C658NLTAG

ON Semiconductor

MOSFET N-CH 60V 109A 8WDFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 109A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1935pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 114W (Tc)
• Rds On (Max) @ Id, Vgs: 5 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-WDFN (3.3x3.3)
• Package / Case: 8-PowerWDFN

封装: 8-PowerWDFN

NVTFS5C454NLWFTAG

ON Semiconductor

TRENCH 6 40V FET

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封装: -

NVMFS5844NLT1G

ON Semiconductor

MOSFET N-CH 60V 11.2A SO-8FL

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.7W (Ta), 107W (Tc)
• Rds On (Max) @ Id, Vgs: 12 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 5-DFN (5x6) (8-SOFL)
• Package / Case: 8-PowerTDFN

封装: 8-PowerTDFN