页 36 - ON Semiconductor 产品 - 二极管 - 整流器 - 单

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
MUR130RL	ON Semiconductor	DIODE GEN PURP 300V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 300V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-204AL, DO-41, Axial	库存2,304	300V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 300V	-	Through Hole	DO-204AL, DO-41, Axial	Axial	-65°C ~ 175°C
MUR115	ON Semiconductor	DIODE GEN PURP 150V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 2µA @ 150V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-204AL, DO-41, Axial	库存4,144	150V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	2µA @ 150V	-	Through Hole	DO-204AL, DO-41, Axial	Axial	-65°C ~ 175°C
MUR110	ON Semiconductor	DIODE GEN PURP 100V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 2µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-204AL, DO-41, Axial	库存10,656,000	100V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	2µA @ 100V	-	Through Hole	DO-204AL, DO-41, Axial	Axial	-65°C ~ 175°C
MUR105RL	ON Semiconductor	DIODE GEN PURP 50V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 2µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-204AL, DO-41, Axial	库存300,000	50V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	2µA @ 50V	-	Through Hole	DO-204AL, DO-41, Axial	Axial	-65°C ~ 175°C
MRA4005T1	ON Semiconductor	DIODE GEN PURP 600V 1A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 175°C	封装: DO-214AC, SMA	库存3,024	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 600V	-	Surface Mount	DO-214AC, SMA	SMA	-55°C ~ 175°C
MR856	ON Semiconductor	DIODE GEN PURP 600V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 125°C	封装: DO-201AA, DO-27, Axial	库存3,552	600V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	10µA @ 600V	-	Through Hole	DO-201AA, DO-27, Axial	DO-201AD	-65°C ~ 125°C
MR852	ON Semiconductor	DIODE GEN PURP 200V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 125°C	封装: DO-201AA, DO-27, Axial	库存3,792	200V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	10µA @ 200V	-	Through Hole	DO-201AA, DO-27, Axial	DO-201AD	-65°C ~ 125°C
MR851RL	ON Semiconductor	DIODE GEN PURP 100V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 125°C	封装: DO-201AA, DO-27, Axial	库存5,216	100V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	10µA @ 100V	-	Through Hole	DO-201AA, DO-27, Axial	DO-201AD	-65°C ~ 125°C
MR851	ON Semiconductor	DIODE GEN PURP 100V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 125°C	封装: DO-201AA, DO-27, Axial	库存28,560	100V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	10µA @ 100V	-	Through Hole	DO-201AA, DO-27, Axial	DO-201AD	-65°C ~ 125°C
MR850	ON Semiconductor	DIODE GEN PURP 50V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 125°C	封装: DO-201AA, DO-27, Axial	库存36,060	50V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	10µA @ 50V	-	Through Hole	DO-201AA, DO-27, Axial	DO-201AD	-65°C ~ 125°C
MR752G	ON Semiconductor	DIODE GP 200V 6A MICRODE BUTTON Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Button, Axial Supplier Device Package: Microde Button Operating Temperature - Junction: -65°C ~ 175°C	封装: Button, Axial	库存6,096	200V	6A	900mV @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	25µA @ 200V	-	Through Hole	Button, Axial	Microde Button	-65°C ~ 175°C
MR752	ON Semiconductor	DIODE GP 200V 6A MICRODE BUTTON Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Button, Axial Supplier Device Package: Microde Button Operating Temperature - Junction: -65°C ~ 175°C	封装: Button, Axial	库存17,700	200V	6A	900mV @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	25µA @ 200V	-	Through Hole	Button, Axial	Microde Button	-65°C ~ 175°C
MR751G	ON Semiconductor	DIODE GP 100V 6A MICRODE BUTTON Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Button, Axial Supplier Device Package: Microde Button Operating Temperature - Junction: -65°C ~ 175°C	封装: Button, Axial	库存6,688	100V	6A	900mV @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	25µA @ 100V	-	Through Hole	Button, Axial	Microde Button	-65°C ~ 175°C
MR751	ON Semiconductor	DIODE GP 100V 6A MICRODE BUTTON Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Button, Axial Supplier Device Package: Microde Button Operating Temperature - Junction: -65°C ~ 175°C	封装: Button, Axial	库存4,304	100V	6A	900mV @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	25µA @ 100V	-	Through Hole	Button, Axial	Microde Button	-65°C ~ 175°C
MR750G	ON Semiconductor	DIODE GP 50V 6A MICRODE BUTTON Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Button, Axial Supplier Device Package: Microde Button Operating Temperature - Junction: -65°C ~ 175°C	封装: Button, Axial	库存5,376	50V	6A	900mV @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	25µA @ 50V	-	Through Hole	Button, Axial	Microde Button	-65°C ~ 175°C
MR750	ON Semiconductor	DIODE GP 50V 6A MICRODE BUTTON Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Button, Axial Supplier Device Package: Microde Button Operating Temperature - Junction: -65°C ~ 175°C	封装: Button, Axial	库存2,112	50V	6A	900mV @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	25µA @ 50V	-	Through Hole	Button, Axial	Microde Button	-65°C ~ 175°C
MR3025	ON Semiconductor	DIODE GP 250V 25A MICRODE BUTTON Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 250V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.18V @ 100A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 250V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Microde Button Supplier Device Package: Microde Button Operating Temperature - Junction: -65°C ~ 175°C	封装: Microde Button	库存4,800	250V	25A	1.18V @ 100A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 250V	-	Surface Mount	Microde Button	Microde Button	-65°C ~ 175°C
MMSD914T3	ON Semiconductor	DIODE GEN PURP 100V 200MA SOD123 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 5µA @ 75V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C	封装: SOD-123	库存7,056	100V	200mA (DC)	1V @ 10mA	Small Signal =< 200mA (Io), Any Speed	4ns	5µA @ 75V	4pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-55°C ~ 150°C
MMSD71RKT1G	ON Semiconductor	DIODE GEN PURP 80V 200MA SOD123 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 500nA @ 80V Capacitance @ Vr, F: 2pF @ 0.5V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C	封装: SOD-123	库存468,000	80V	200mA (DC)	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	500nA @ 80V	2pF @ 0.5V, 1MHz	Surface Mount	SOD-123	SOD-123	-55°C ~ 150°C
MMSD71RKT1	ON Semiconductor	DIODE GEN PURP 80V 200MA SOD123 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 500nA @ 80V Capacitance @ Vr, F: 2pF @ 0.5V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C	封装: SOD-123	库存36,000	80V	200mA (DC)	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	500nA @ 80V	2pF @ 0.5V, 1MHz	Surface Mount	SOD-123	SOD-123	-55°C ~ 150°C
MMSD701T1	ON Semiconductor	DIODE SCHOTTKY 70V 200MA SOD123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 70V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200nA @ 35V Capacitance @ Vr, F: 1pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 125°C	封装: SOD-123	库存5,568	70V	200mA (DC)	1V @ 10mA	Small Signal =< 200mA (Io), Any Speed	-	200nA @ 35V	1pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-55°C ~ 125°C
MMSD103T1	ON Semiconductor	DIODE GEN PURP 250V 200MA SOD123 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 250V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C	封装: SOD-123	库存7,600	250V	200mA (DC)	1.25V @ 200mA	Small Signal =< 200mA (Io), Any Speed	50ns	1µA @ 200V	5pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-55°C ~ 150°C
MMDL6050T1	ON Semiconductor	DIODE GEN PURP 70V 200MA SOD323 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 70V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C	封装: SC-76, SOD-323	库存3,824	70V	200mA (DC)	1.1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	100nA @ 50V	-	Surface Mount	SC-76, SOD-323	SOD-323	-55°C ~ 150°C
MBRS4201T3	ON Semiconductor	DIODE SCHOTTKY 200V 4A SMC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 860mV @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 1mA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AB, SMC	库存4,944	200V	4A	860mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1mA @ 200V	-	Surface Mount	DO-214AB, SMC	SMC	-55°C ~ 150°C
MBRS3201T3	ON Semiconductor	DIODE SCHOTTKY 200V 3A SMC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 840mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 1mA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AB, SMC	库存7,328	200V	3A	840mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1mA @ 200V	-	Surface Mount	DO-214AB, SMC	SMC	-55°C ~ 150°C
MBRS230LT3	ON Semiconductor	DIODE SCHOTTKY 30V 2A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 125°C	封装: DO-214AA, SMB	库存1,585,092	30V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 30V	-	Surface Mount	DO-214AA, SMB	SMB	-55°C ~ 125°C
MBRS1540T3	ON Semiconductor	DIODE SCHOTTKY 40V 1.5A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 460mV @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 800µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 125°C	封装: DO-214AA, SMB	库存300,840	40V	1.5A	460mV @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	800µA @ 40V	-	Surface Mount	DO-214AA, SMB	SMB	-55°C ~ 125°C
MBRM120ET1	ON Semiconductor	DIODE SCHOTTKY 20V 1A POWERMITE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 530mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-216AA Supplier Device Package: Powermite Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-216AA	库存51,504	20V	1A	530mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 20V	-	Surface Mount	DO-216AA	Powermite	-65°C ~ 150°C
MBRM110LT3	ON Semiconductor	DIODE SCHOTTKY 10V 1A POWERMITE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 10V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 365mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 10V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-216AA Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 125°C	封装: DO-216AA	库存6,288	10V	1A	365mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 10V	-	Surface Mount	DO-216AA	Powermite	-55°C ~ 125°C
MBRM110ET3	ON Semiconductor	DIODE SCHOTTKY 10V 1A POWERMITE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 10V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 530mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 10V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-216AA Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-216AA	库存6,048	10V	1A	530mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1µA @ 10V	-	Surface Mount	DO-216AA	Powermite	-55°C ~ 150°C

MUR130RL

ON Semiconductor

DIODE GEN PURP 300V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-204AL, DO-41, Axial

库存2,304

300V

1A

1.25V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

5µA @ 300V

-

Through Hole

DO-204AL, DO-41, Axial

Axial

-65°C ~ 175°C

MUR115

ON Semiconductor

DIODE GEN PURP 150V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 2µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-204AL, DO-41, Axial

库存4,144

150V

1A

875mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

2µA @ 150V

-

Through Hole

DO-204AL, DO-41, Axial

Axial

-65°C ~ 175°C

MUR110

ON Semiconductor

DIODE GEN PURP 100V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 2µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-204AL, DO-41, Axial

库存10,656,000

100V

1A

875mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

2µA @ 100V

-

Through Hole

DO-204AL, DO-41, Axial

Axial

-65°C ~ 175°C

MUR105RL

ON Semiconductor

DIODE GEN PURP 50V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 2µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-204AL, DO-41, Axial

库存300,000

50V

1A

875mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

2µA @ 50V

-

Through Hole

DO-204AL, DO-41, Axial

Axial

-65°C ~ 175°C

MRA4005T1

ON Semiconductor

DIODE GEN PURP 600V 1A SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 175°C

封装: DO-214AC, SMA

库存3,024

600V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 600V

-

Surface Mount

DO-214AC, SMA

SMA

-55°C ~ 175°C

MR856

ON Semiconductor

DIODE GEN PURP 600V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 125°C

封装: DO-201AA, DO-27, Axial

库存3,552

600V

3A

1.25V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

300ns

10µA @ 600V

-

Through Hole

DO-201AA, DO-27, Axial

DO-201AD

-65°C ~ 125°C

MR852

ON Semiconductor

DIODE GEN PURP 200V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 125°C

封装: DO-201AA, DO-27, Axial

库存3,792

200V

3A

1.25V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

300ns

10µA @ 200V

-

Through Hole

DO-201AA, DO-27, Axial

DO-201AD

-65°C ~ 125°C

MR851RL

ON Semiconductor

DIODE GEN PURP 100V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 125°C

封装: DO-201AA, DO-27, Axial

库存5,216

100V

3A

1.25V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

300ns

10µA @ 100V

-

Through Hole

DO-201AA, DO-27, Axial

DO-201AD

-65°C ~ 125°C

MR851

ON Semiconductor

DIODE GEN PURP 100V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 125°C

封装: DO-201AA, DO-27, Axial

库存28,560

100V

3A

1.25V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

300ns

10µA @ 100V

-

Through Hole

DO-201AA, DO-27, Axial

DO-201AD

-65°C ~ 125°C

MR850

ON Semiconductor

DIODE GEN PURP 50V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 125°C

封装: DO-201AA, DO-27, Axial

库存36,060

50V

3A

1.25V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

300ns

10µA @ 50V

-

Through Hole

DO-201AA, DO-27, Axial

DO-201AD

-65°C ~ 125°C

MR752G

ON Semiconductor

DIODE GP 200V 6A MICRODE BUTTON

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 25µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Button, Axial
Supplier Device Package: Microde Button
Operating Temperature - Junction: -65°C ~ 175°C

封装: Button, Axial

库存6,096

200V

6A

900mV @ 6A

Standard Recovery >500ns, > 200mA (Io)

-

25µA @ 200V

-

Through Hole

Button, Axial

Microde Button

-65°C ~ 175°C

MR752

ON Semiconductor

DIODE GP 200V 6A MICRODE BUTTON

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 25µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Button, Axial
Supplier Device Package: Microde Button
Operating Temperature - Junction: -65°C ~ 175°C

封装: Button, Axial

库存17,700

200V

6A

900mV @ 6A

Standard Recovery >500ns, > 200mA (Io)

-

25µA @ 200V

-

Through Hole

Button, Axial

Microde Button

-65°C ~ 175°C

MR751G

ON Semiconductor

DIODE GP 100V 6A MICRODE BUTTON

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 25µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Button, Axial
Supplier Device Package: Microde Button
Operating Temperature - Junction: -65°C ~ 175°C

封装: Button, Axial

库存6,688

100V

6A

900mV @ 6A

Standard Recovery >500ns, > 200mA (Io)

-

25µA @ 100V

-

Through Hole

Button, Axial

Microde Button

-65°C ~ 175°C

MR751

ON Semiconductor

DIODE GP 100V 6A MICRODE BUTTON

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 25µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Button, Axial
Supplier Device Package: Microde Button
Operating Temperature - Junction: -65°C ~ 175°C

封装: Button, Axial

库存4,304

100V

6A

900mV @ 6A

Standard Recovery >500ns, > 200mA (Io)

-

25µA @ 100V

-

Through Hole

Button, Axial

Microde Button

-65°C ~ 175°C

MR750G

ON Semiconductor

DIODE GP 50V 6A MICRODE BUTTON

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 25µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Button, Axial
Supplier Device Package: Microde Button
Operating Temperature - Junction: -65°C ~ 175°C

封装: Button, Axial

库存5,376

50V

6A

900mV @ 6A

Standard Recovery >500ns, > 200mA (Io)

-

25µA @ 50V

-

Through Hole

Button, Axial

Microde Button

-65°C ~ 175°C

MR750

ON Semiconductor

DIODE GP 50V 6A MICRODE BUTTON

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 25µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Button, Axial
Supplier Device Package: Microde Button
Operating Temperature - Junction: -65°C ~ 175°C

封装: Button, Axial

库存2,112

50V

6A

900mV @ 6A

Standard Recovery >500ns, > 200mA (Io)

-

25µA @ 50V

-

Through Hole

Button, Axial

Microde Button

-65°C ~ 175°C

MR3025

ON Semiconductor

DIODE GP 250V 25A MICRODE BUTTON

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 250V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.18V @ 100A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 250V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Microde Button
Supplier Device Package: Microde Button
Operating Temperature - Junction: -65°C ~ 175°C

封装: Microde Button

库存4,800

250V

25A

1.18V @ 100A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 250V

-

Surface Mount

Microde Button

-65°C ~ 175°C

MMSD914T3

ON Semiconductor

DIODE GEN PURP 100V 200MA SOD123

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 5µA @ 75V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C

封装: SOD-123

库存7,056

100V

200mA (DC)

1V @ 10mA

Small Signal =< 200mA (Io), Any Speed

4ns

5µA @ 75V

4pF @ 0V, 1MHz

Surface Mount

SOD-123

-55°C ~ 150°C

MMSD71RKT1G

ON Semiconductor

DIODE GEN PURP 80V 200MA SOD123

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 500nA @ 80V
Capacitance @ Vr, F: 2pF @ 0.5V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C

封装: SOD-123

库存468,000

80V

200mA (DC)

1.2V @ 100mA

Small Signal =< 200mA (Io), Any Speed

4ns

500nA @ 80V

2pF @ 0.5V, 1MHz

Surface Mount

SOD-123

-55°C ~ 150°C

MMSD71RKT1

ON Semiconductor

DIODE GEN PURP 80V 200MA SOD123

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 500nA @ 80V
Capacitance @ Vr, F: 2pF @ 0.5V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C

封装: SOD-123

库存36,000

80V

200mA (DC)

1.2V @ 100mA

Small Signal =< 200mA (Io), Any Speed

4ns

500nA @ 80V

2pF @ 0.5V, 1MHz

Surface Mount

SOD-123

-55°C ~ 150°C

MMSD701T1

ON Semiconductor

DIODE SCHOTTKY 70V 200MA SOD123

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 70V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200nA @ 35V
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C

封装: SOD-123

库存5,568

70V

200mA (DC)

1V @ 10mA

Small Signal =< 200mA (Io), Any Speed

-

200nA @ 35V

1pF @ 0V, 1MHz

Surface Mount

SOD-123

-55°C ~ 125°C

MMSD103T1

ON Semiconductor

DIODE GEN PURP 250V 200MA SOD123

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 250V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C

封装: SOD-123

库存7,600

250V

200mA (DC)

1.25V @ 200mA

Small Signal =< 200mA (Io), Any Speed

50ns

1µA @ 200V

5pF @ 0V, 1MHz

Surface Mount

SOD-123

-55°C ~ 150°C

MMDL6050T1

ON Semiconductor

DIODE GEN PURP 70V 200MA SOD323

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 70V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100nA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C

封装: SC-76, SOD-323

库存3,824

70V

200mA (DC)

1.1V @ 100mA

Small Signal =< 200mA (Io), Any Speed

4ns

100nA @ 50V

-

Surface Mount

SC-76, SOD-323

SOD-323

-55°C ~ 150°C

MBRS4201T3

ON Semiconductor

DIODE SCHOTTKY 200V 4A SMC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 860mV @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 1mA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AB, SMC

库存4,944

200V

4A

860mV @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

1mA @ 200V

-

Surface Mount

DO-214AB, SMC

SMC

-55°C ~ 150°C

MBRS3201T3

ON Semiconductor

DIODE SCHOTTKY 200V 3A SMC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 840mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 1mA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AB, SMC

库存7,328

200V

3A

840mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

1mA @ 200V

-

Surface Mount

DO-214AB, SMC

SMC

-55°C ~ 150°C

MBRS230LT3

ON Semiconductor

DIODE SCHOTTKY 30V 2A SMB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 125°C

封装: DO-214AA, SMB

库存1,585,092

30V

2A

500mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 30V

-

Surface Mount

DO-214AA, SMB

SMB

-55°C ~ 125°C

MBRS1540T3

ON Semiconductor

DIODE SCHOTTKY 40V 1.5A SMB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 460mV @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 800µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 125°C

封装: DO-214AA, SMB

库存300,840

40V

1.5A

460mV @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

-

800µA @ 40V

-

Surface Mount

DO-214AA, SMB

SMB

-55°C ~ 125°C

MBRM120ET1

ON Semiconductor

DIODE SCHOTTKY 20V 1A POWERMITE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 530mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-216AA
Supplier Device Package: Powermite
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-216AA

库存51,504

20V

1A

530mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

10µA @ 20V

-

Surface Mount

DO-216AA

Powermite

-65°C ~ 150°C

MBRM110LT3

ON Semiconductor

DIODE SCHOTTKY 10V 1A POWERMITE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 10V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 365mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 10V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-216AA
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C

封装: DO-216AA

库存6,288

10V

1A

365mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 10V

-

Surface Mount

DO-216AA

Powermite

-55°C ~ 125°C

MBRM110ET3

ON Semiconductor

DIODE SCHOTTKY 10V 1A POWERMITE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 10V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 530mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1µA @ 10V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-216AA
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-216AA

库存6,048

10V

1A

530mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

1µA @ 10V

-

Surface Mount

DO-216AA

Powermite

-55°C ~ 150°C