页 7 - NXP 产品 - 晶体管 - FET，MOSFET - 单

PHP225NQ04T,127

NXP

MOSFET N-CH 40V 75A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封装: TO-220-3

库存3,008

MOSFET (Metal Oxide)

40V

75A (Tc)

10V

4V @ 1mA

94nC @ 10V

5100pF @ 25V

±20V

-

300W (Tc)

3.1 mOhm @ 25A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

PHP222NQ04LT,127

NXP

MOSFET N-CH 40V 75A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 93.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 7880pF @ 25V
Vgs (Max): ±15V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封装: TO-220-3

库存2,640

MOSFET (Metal Oxide)

40V

75A (Tc)

4.5V, 10V

2V @ 1mA

93.6nC @ 5V

7880pF @ 25V

±15V

-

300W (Tc)

2.8 mOhm @ 25A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

PHP21N06LT,127

NXP

MOSFET N-CH 55V 19A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Vgs (Max): ±15V
FET Feature: -
Power Dissipation (Max): 56W (Tc)
Rds On (Max) @ Id, Vgs: 70 mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封装: TO-220-3

库存5,456

MOSFET (Metal Oxide)

55V

19A (Tc)

5V, 10V

2V @ 1mA

9.4nC @ 5V

650pF @ 25V

±15V

-

56W (Tc)

70 mOhm @ 10A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

PHP193NQ06T,127

NXP

MOSFET N-CH 55V 75A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 85.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5082pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封装: TO-220-3

库存3,200

MOSFET (Metal Oxide)

55V

75A (Tc)

10V

4V @ 1mA

85.6nC @ 10V

5082pF @ 25V

±20V

-

300W (Tc)

4 mOhm @ 25A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

PHP176NQ04T,127

NXP

MOSFET N-CH 40V 75A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 68.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3620pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封装: TO-220-3

库存2,400

MOSFET (Metal Oxide)

40V

75A (Tc)

10V

4V @ 1mA

68.9nC @ 10V

3620pF @ 25V

±20V

-

250W (Tc)

4.3 mOhm @ 25A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

PHP174NQ04LT,127

NXP

MOSFET N-CH 40V 75A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 5345pF @ 25V
Vgs (Max): ±15V
FET Feature: -
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封装: TO-220-3

库存6,448

MOSFET (Metal Oxide)

40V

75A (Tc)

4.5V, 10V

2V @ 1mA

64nC @ 5V

5345pF @ 25V

±15V

-

250W (Tc)

4 mOhm @ 25A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

PHP152NQ03LTA,127

NXP

MOSFET N-CH 25V 75A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 3140pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封装: TO-220-3

库存7,072

MOSFET (Metal Oxide)

25V

75A (Tc)

5V, 10V

2V @ 1mA

36nC @ 5V

3140pF @ 25V

±20V

-

150W (Tc)

4 mOhm @ 25A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

PHP14NQ20T,127

NXP

MOSFET N-CH 200V 14A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 230 mOhm @ 7A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封装: TO-220-3

库存7,136

MOSFET (Metal Oxide)

200V

14A (Tc)

10V

4V @ 1mA

38nC @ 10V

1500pF @ 25V

±20V

-

125W (Tc)

230 mOhm @ 7A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

PHP143NQ04T,127

NXP

MOSFET N-CH 40V 75A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2840pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封装: TO-220-3

库存5,216

MOSFET (Metal Oxide)

40V

75A (Tc)

10V

4V @ 1mA

52nC @ 10V

2840pF @ 25V

±20V

-

200W (Tc)

5.2 mOhm @ 25A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

PHP129NQ04LT,127

NXP

MOSFET N-CH 40V 75A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 44.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 3965pF @ 25V
Vgs (Max): ±15V
FET Feature: -
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封装: TO-220-3

库存6,896

MOSFET (Metal Oxide)

40V

75A (Tc)

4.5V, 10V

2V @ 1mA

44.2nC @ 5V

3965pF @ 25V

±15V

-

200W (Tc)

5 mOhm @ 25A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

PHP119NQ06T,127

NXP

MOSFET N-CH 55V 75A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2820pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 7.1 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封装: TO-220-3

库存3,888

MOSFET (Metal Oxide)

55V

75A (Tc)

10V

4V @ 1mA

53nC @ 10V

2820pF @ 25V

±20V

-

200W (Tc)

7.1 mOhm @ 25A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

PHP112N06T,127

NXP

MOSFET N-CH 55V 75A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4352pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 8 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封装: TO-220-3

库存7,904

MOSFET (Metal Oxide)

55V

75A (Tc)

10V

4V @ 1mA

87nC @ 10V

4352pF @ 25V

±20V

-

200W (Tc)

8 mOhm @ 25A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

PHP110NQ06LT,127

NXP

MOSFET N-CH 55V 75A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 3960pF @ 25V
Vgs (Max): ±15V
FET Feature: -
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封装: TO-220-3

库存5,712

MOSFET (Metal Oxide)

55V

75A (Tc)

4.5V, 10V

2V @ 1mA

45nC @ 5V

3960pF @ 25V

±15V

-

200W (Tc)

7 mOhm @ 25A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

PHP101NQ04T,127

NXP

MOSFET N-CH 40V 75A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 36.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 157W (Tc)
Rds On (Max) @ Id, Vgs: 8 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封装: TO-220-3

库存3,088

MOSFET (Metal Oxide)

40V

75A (Tc)

10V

4V @ 1mA

36.6nC @ 10V

2020pF @ 25V

±20V

-

157W (Tc)

8 mOhm @ 25A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

PHP101NQ03LT,127

NXP

MOSFET N-CH 30V 75A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 2180pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 166W (Tc)
Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封装: TO-220-3

库存2,016

MOSFET (Metal Oxide)

30V

75A (Tc)

5V, 10V

2.5V @ 1mA

23nC @ 5V

2180pF @ 25V

±20V

-

166W (Tc)

5.5 mOhm @ 25A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

PHM30NQ10T,518

NXP

MOSFET N-CH 100V 37.6A 8HVSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 37.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 53.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 20 mOhm @ 18A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-HVSON (6x5)
Package / Case: 8-VDFN Exposed Pad

封装: 8-VDFN Exposed Pad

库存6,032

MOSFET (Metal Oxide)

100V

37.6A (Tc)

10V

4V @ 1mA

53.7nC @ 10V

3600pF @ 25V

±20V

-

62.5W (Tc)

20 mOhm @ 18A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-HVSON (6x5)

8-VDFN Exposed Pad

PHM25NQ10T,518

NXP

MOSFET N-CH 100V 30.7A 8HVSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 30.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 26.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 20V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 30 mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-HVSON (6x5)
Package / Case: 8-VDFN Exposed Pad

封装: 8-VDFN Exposed Pad

库存5,328

MOSFET (Metal Oxide)

100V

30.7A (Tc)

10V

4V @ 1mA

26.6nC @ 10V

1800pF @ 20V

±20V

-

62.5W (Tc)

30 mOhm @ 10A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-HVSON (6x5)

8-VDFN Exposed Pad

PHM21NQ15T,518

NXP

MOSFET N-CH 150V 22.2A 8HVSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 22.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 36.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2080pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 55 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-HVSON (6x5)
Package / Case: 8-VDFN Exposed Pad

封装: 8-VDFN Exposed Pad

库存6,640

MOSFET (Metal Oxide)

150V

22.2A (Tc)

5V, 10V

4V @ 1mA

36.2nC @ 10V

2080pF @ 25V

±20V

-

62.5W (Tc)

55 mOhm @ 15A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-HVSON (6x5)

8-VDFN Exposed Pad

PHM18NQ15T,518

NXP

MOSFET N-CH 150V 19A SOT685-1

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 26.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 75 mOhm @ 12A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-HVSON (6x5)
Package / Case: 8-VDFN Exposed Pad

封装: 8-VDFN Exposed Pad

库存4,864

MOSFET (Metal Oxide)

150V

19A (Tc)

5V, 10V

4V @ 1mA

26.4nC @ 10V

1150pF @ 25V

±20V

-

62.5W (Tc)

75 mOhm @ 12A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-HVSON (6x5)

8-VDFN Exposed Pad

PHM15NQ20T,518

NXP

MOSFET N-CH 200V 17.5A 8HVSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2170pF @ 30V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 85 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-HVSON (6x5)
Package / Case: 8-VDFN Exposed Pad

封装: 8-VDFN Exposed Pad

库存4,080

MOSFET (Metal Oxide)

200V

17.5A (Tc)

10V

4V @ 1mA

40nC @ 10V

2170pF @ 30V

±20V

-

62.5W (Tc)

85 mOhm @ 15A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-HVSON (6x5)

8-VDFN Exposed Pad

PHM12NQ20T,518

NXP

MOSFET N-CH 200V 14.4A 8HVSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 14.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 130 mOhm @ 12A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-HVSON (6x5)
Package / Case: 8-VDFN Exposed Pad

封装: 8-VDFN Exposed Pad

库存7,952

MOSFET (Metal Oxide)

200V

14.4A (Tc)

5V, 10V

4V @ 1mA

26nC @ 10V

1230pF @ 25V

±20V

-

62.5W (Tc)

130 mOhm @ 12A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-HVSON (6x5)

8-VDFN Exposed Pad

PHK4NQ20T,518

NXP

MOSFET N-CH 200V 4A SOT96-1

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 130 mOhm @ 4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

库存4,560

MOSFET (Metal Oxide)

200V

4A (Tc)

5V, 10V

4V @ 1mA

26nC @ 10V

1230pF @ 25V

±20V

-

6.25W (Tc)

130 mOhm @ 4A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-SO

8-SOIC (0.154", 3.90mm Width)

PHK4NQ10T,518

NXP

MOSFET N-CH 100V SOT96-1

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 70 mOhm @ 4A, 10V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

库存4,592

MOSFET (Metal Oxide)

100V

-

4.5V, 10V

4V @ 1mA

22nC @ 10V

880pF @ 25V

±20V

-

2.5W (Ta)

70 mOhm @ 4A, 10V

-65°C ~ 150°C (TJ)

Surface Mount

8-SO

8-SOIC (0.154", 3.90mm Width)

PHK12NQ10T,518

NXP

MOSFET N-CH 100V 11.6A SOT96-1

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1965pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 8.9W (Tc)
Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

库存7,552

MOSFET (Metal Oxide)

100V

11.6A (Tc)

10V

4V @ 1mA

35nC @ 10V

1965pF @ 25V

±20V

-

8.9W (Tc)

28 mOhm @ 6A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-SO

8-SOIC (0.154", 3.90mm Width)

PHD98N03LT,118

NXP

MOSFET N-CH 25V 75A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 20V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 111W (Tc)
Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存3,648

MOSFET (Metal Oxide)

25V

75A (Tc)

5V, 10V

2V @ 1mA

40nC @ 5V

3000pF @ 20V

±20V

-

111W (Tc)

5.9 mOhm @ 25A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

DPAK

TO-252-3, DPak (2 Leads + Tab), SC-63

PHD96NQ03LT,118

NXP

MOSFET N-CH 25V 75A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 26.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 4.95 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存4,592

MOSFET (Metal Oxide)

25V

75A (Tc)

5V, 10V

2V @ 1mA

26.7nC @ 5V

2200pF @ 25V

±20V

-

115W (Tc)

4.95 mOhm @ 25A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

DPAK

TO-252-3, DPak (2 Leads + Tab), SC-63

PHD78NQ03LT,118

NXP

MOSFET N-CH 25V 75A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 12V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 9 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存6,160

MOSFET (Metal Oxide)

25V

75A (Tc)

5V, 10V

2V @ 1mA

11nC @ 4.5V

970pF @ 12V

±20V

-

107W (Tc)

9 mOhm @ 25A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

DPAK

TO-252-3, DPak (2 Leads + Tab), SC-63

PHD66NQ03LT,118

NXP

MOSFET N-CH 25V 66A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 93W (Tc)
Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存7,632

MOSFET (Metal Oxide)

25V

66A (Tc)

5V, 10V

2V @ 1mA

12nC @ 5V

860pF @ 25V

±20V

-

93W (Tc)

10.5 mOhm @ 25A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

DPAK

TO-252-3, DPak (2 Leads + Tab), SC-63

PHD63NQ03LT,118

NXP

MOSFET N-CH 30V 68.9A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 68.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 111W (Tc)
Rds On (Max) @ Id, Vgs: 13 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存3,712

MOSFET (Metal Oxide)

30V

68.9A (Tc)

5V, 10V

2.5V @ 1mA

9.6nC @ 5V

920pF @ 25V

±20V

-

111W (Tc)

13 mOhm @ 25A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

DPAK

TO-252-3, DPak (2 Leads + Tab), SC-63

PHD55N03LTA,118

NXP

MOSFET N-CH 25V 55A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 14 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存4,976

MOSFET (Metal Oxide)

25V

55A (Tc)

5V, 10V

2V @ 1mA

20nC @ 5V

950pF @ 25V

±20V

-

85W (Tc)

14 mOhm @ 25A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

DPAK

TO-252-3, DPak (2 Leads + Tab), SC-63