Microsemi Corporation 产品

APT60GT60BRG

Microsemi Corporation

IGBT 600V 100A 500W TO247

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 100A
• Current - Collector Pulsed (Icm): 360A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
• Power - Max: 500W
• Switching Energy: 3.4mJ
• Input Type: Standard
• Gate Charge: 275nC
• Td (on/off) @ 25°C: 26ns/395ns
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 [B]

封装: TO-247-3

APTGT150A60T3AG

Microsemi Corporation

MOD IGBT 600V 225A SP3

• IGBT Type: Trench Field Stop
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 225A
• Power - Max: 600W
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 150A
• Current - Collector Cutoff (Max): 250µA
• Input Capacitance (Cies) @ Vce: 9.2nF @ 25V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Supplier Device Package: SP3

封装: SP3

JANTXV2N2060L

Microsemi Corporation

TRANS 2NPN 60V 0.5A TO78

• Transistor Type: 2 NPN (Dual)
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
• Power - Max: 2.12W
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-78-6 Metal Can
• Supplier Device Package: TO-78-6

封装: TO-78-6 Metal Can

JANTXV1N4106-1

Microsemi Corporation

DIODE ZENER 12V 500MW DO35

• Voltage - Zener (Nom) (Vz): 12V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 200 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 9.2V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35 (DO-204AH)

封装: DO-204AH, DO-35, Axial

1N2984RB

Microsemi Corporation

DIODE ZENER 20V 10W DO213AA

• Voltage - Zener (Nom) (Vz): 20V
• Tolerance: ±5%
• Power - Max: 10W
• Impedance (Max) (Zzt): 4 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 15.2V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 2A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AA, DO-4, Stud
• Supplier Device Package: DO-213AA

封装: DO-203AA, DO-4, Stud

JANTXV1N980DUR-1

Microsemi Corporation

DIODE ZENER 62V 500MW DO213AA

• Voltage - Zener (Nom) (Vz): 62V
• Tolerance: ±1%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 185 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 47V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AA
• Supplier Device Package: DO-213AA

封装: DO-213AA

JAN1N4112CUR-1

Microsemi Corporation

DIODE ZENER 18V DO213AA

• Voltage - Zener (Nom) (Vz): 18V
• Tolerance: ±2%
• Power - Max: -
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 13.7V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AA
• Supplier Device Package: DO-213AA

封装: DO-213AA

CDLL4758

Microsemi Corporation

DIODE ZENER 56V DO213AB

• Voltage - Zener (Nom) (Vz): 56V
• Tolerance: ±10%
• Power - Max: -
• Impedance (Max) (Zzt): 110 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 42.6V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: DO-213AB

封装: DO-213AB, MELF

2EZ56DE3/TR8

Microsemi Corporation

DIODE ZENER 56V 2W DO204AL

• Voltage - Zener (Nom) (Vz): 56V
• Tolerance: ±20%
• Power - Max: 2W
• Impedance (Max) (Zzt): 55 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 42.6V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封装: DO-204AL, DO-41, Axial

SMBJ4764A/TR13

Microsemi Corporation

DIODE ZENER 100V 2W SMBJ

• Voltage - Zener (Nom) (Vz): 100V
• Tolerance: ±5%
• Power - Max: 2W
• Impedance (Max) (Zzt): 350 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 76V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMBJ (DO-214AA)

封装: DO-214AA, SMB

SK33BE3/TR13

Microsemi Corporation

DIODE SCHOTTKY 30V 3A SMB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 30V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMB (DO-214AA)
• Operating Temperature - Junction: -55°C ~ 125°C

封装: DO-214AA, SMB

JANTXV1N5807

Microsemi Corporation

DIODE GEN PURP 50V 3A AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Current - Reverse Leakage @ Vr: 5µA @ 50V
• Capacitance @ Vr, F: 65pF @ 10V, 1MHz
• Mounting Type: Through Hole
• Package / Case: B, Axial
• Supplier Device Package: -
• Operating Temperature - Junction: -65°C ~ 175°C

封装: B, Axial

1N6625US

Microsemi Corporation

DIODE GEN PURP 1.1KV 1A A-MELF

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1100V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.75V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 60ns
• Current - Reverse Leakage @ Vr: 1µA @ 1100V
• Capacitance @ Vr, F: 10pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, A
• Supplier Device Package: A-MELF
• Operating Temperature - Junction: -65°C ~ 150°C

封装: SQ-MELF, A

M2S100S-1FCG1152I

Microsemi Corporation

IC FPGA SOC 100K LUTS 1152FCBGA

• Architecture: MCU, FPGA
• Core Processor: ARM? Cortex?-M3
• Flash Size: 512KB
• RAM Size: 64KB
• Peripherals: DDR, PCIe, SERDES
• Connectivity: CAN, Ethernet, I2C, SPI, UART/USART, USB
• Speed: 166MHz
• Primary Attributes: FPGA - 100K Logic Modules
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: 1152-BBGA, FCBGA
• Supplier Device Package: 1152-FCBGA (35x35)

封装: 1152-BBGA, FCBGA

M1AGL600V2-FGG484I

Microsemi Corporation

IC FPGA 235 I/O 484FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 13824
• Total RAM Bits: 110592
• Number of I/O: 235
• Number of Gates: 600000
• Voltage - Supply: 1.14 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 484-BGA
• Supplier Device Package: 484-FPBGA (23x23)

封装: 484-BGA

A54SX32-2BG329I

Microsemi Corporation

IC FPGA 249 I/O 329BGA

• Number of LABs/CLBs: 2880
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: 249
• Number of Gates: 48000
• Voltage - Supply: 3 V ~ 3.6 V, 4.75 V ~ 5.25 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 329-BBGA
• Supplier Device Package: 329-PBGA (31x31)

封装: 329-BBGA

A54SX32A-FPQ208

Microsemi Corporation

IC FPGA 174 I/O 208QFP

• Number of LABs/CLBs: 2880
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: 174
• Number of Gates: 48000
• Voltage - Supply: 2.25 V ~ 5.25 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 70°C (TA)
• Package / Case: 208-BFQFP
• Supplier Device Package: 208-PQFP (28x28)

封装: 208-BFQFP

ZL30365GDG2

Microsemi Corporation

IC NETWORK SYNCH ETH CLK 144LBGA

• PLL: Yes
• Main Purpose: Ethernet, Fibre Channel, SONET/SDH
• Input: Clock
• Output: LVCMOS, LVPECL
• Number of Circuits: 1
• Ratio - Input:Output: 8:16
• Differential - Input:Output: Yes/Yes
• Frequency - Max: 750MHz
• Voltage - Supply: -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 144-BGA
• Supplier Device Package: 144-LBGA (13x13)

封装: 144-BGA

1N6050A

Microsemi Corporation

TVS DIODE 25VWM 41.4VC DO13

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 25V
• Voltage - Breakdown (Min): 28.5V
• Voltage - Clamping (Max) @ Ipp: 41.4V
• Current - Peak Pulse (10/1000µs): 36A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-13
• Supplier Device Package: DO-13

封装: DO-13

M15KP200A

Microsemi Corporation

TVS DIODE 200VWM 322VC DO204AR

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 200V
• Voltage - Breakdown (Min): 222V
• Voltage - Clamping (Max) @ Ipp: 322V
• Current - Peak Pulse (10/1000µs): 47A
• Power - Peak Pulse: 15000W (15kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AR, Axial
• Supplier Device Package: DO-204AR

封装: DO-204AR, Axial

JANTXV1N6103A

Microsemi Corporation

TVS DIODE 5.7VWM BPKG AXIAL

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 5.7V
• Voltage - Breakdown (Min): 7.13V
• Voltage - Clamping (Max) @ Ipp: 11.2V
• Current - Peak Pulse (10/1000µs): 44.6A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: B, Axial
• Supplier Device Package: Axial

封装: B, Axial

MXLSMCGLCE28AE3

Microsemi Corporation

TVS DIODE 28VWM 45.5VC DO215AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 28V
• Voltage - Breakdown (Min): 31.1V
• Voltage - Clamping (Max) @ Ipp: 45.5V
• Current - Peak Pulse (10/1000µs): 33A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 100pF @ 1MHz
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: SMCG (DO-215AB)

封装: DO-215AB, SMC Gull Wing

MXPLAD6.5KP28AE3

Microsemi Corporation

TVS DIODE 28VWM 45.5VC PLAD

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 28V
• Voltage - Breakdown (Min): 31.1V
• Voltage - Clamping (Max) @ Ipp: 45.5V
• Current - Peak Pulse (10/1000µs): 143A
• Power - Peak Pulse: 6500W (6.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

封装: Nonstandard SMD

MXP5KE9.0AE3

Microsemi Corporation

TVS DIODE 9VWM 15.4VC DO41

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 9V
• Voltage - Breakdown (Min): 10V
• Voltage - Clamping (Max) @ Ipp: 15.4V
• Current - Peak Pulse (10/1000µs): 32.5A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封装: DO-204AL, DO-41, Axial

MXLSMLJ12AE3

Microsemi Corporation

TVS DIODE 12VWM 19.9VC DO214AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 12V
• Voltage - Breakdown (Min): 13.3V
• Voltage - Clamping (Max) @ Ipp: 19.9V
• Current - Peak Pulse (10/1000µs): 150.6A
• Power - Peak Pulse: 3000W (3kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB

封装: DO-214AB, SMC

MXLSMCG64AE3

Microsemi Corporation

TVS DIODE 64VWM 103VC DO215AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 64V
• Voltage - Breakdown (Min): 71.1V
• Voltage - Clamping (Max) @ Ipp: 103V
• Current - Peak Pulse (10/1000µs): 14.6A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: SMCG (DO-215AB)

封装: DO-215AB, SMC Gull Wing

MXLSMBJ33AE3

Microsemi Corporation

TVS DIODE 33VWM 53.3VC DO214AA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 33V
• Voltage - Breakdown (Min): 36.7V
• Voltage - Clamping (Max) @ Ipp: 53.3V
• Current - Peak Pulse (10/1000µs): 11.3A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMBJ (DO-214AA)

封装: DO-214AA, SMB

5KP200AE3/TR13

Microsemi Corporation

TVS DIODE 200VWM 329VC P600

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 200V
• Voltage - Breakdown (Min): 222V
• Voltage - Clamping (Max) @ Ipp: 329V
• Current - Peak Pulse (10/1000µs): 15.5A
• Power - Peak Pulse: 5000W (5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: P600, Axial
• Supplier Device Package: P600

封装: P600, Axial

SMAJ100E3/TR13

Microsemi Corporation

TVS DIODE 100VWM 179VC SMAJ

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 100V
• Voltage - Breakdown (Min): 111V
• Voltage - Clamping (Max) @ Ipp: 179V
• Current - Peak Pulse (10/1000µs): 2.8A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

封装: DO-214AC, SMA

MPF300XT-1FCG784I

Microsemi Corporation

IC FPGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: -
• Number of Gates: -
• Voltage - Supply: -
• Mounting Type: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

封装: -