Microsemi Corporation 产品 - 二极管 - 整流器 - 单

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
UPS840E3/TR13	Microsemi Corporation	DIODE SCHOTTKY 40V 8A POWERMITE3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 450mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Powermite?3 Supplier Device Package: Powermite 3 Operating Temperature - Junction: -55°C ~ 125°C	封装: Powermite?3	库存72,336	40V	8A	450mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 40V	-	Surface Mount	Powermite?3	Powermite 3	-55°C ~ 125°C
LSM115JE3/TR13	Microsemi Corporation	DIODE SCHOTTKY 15V 1A DO214BA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 15V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 220mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10mA @ 15V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214BA Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AA, SMB	库存24,000	15V	1A	220mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	10mA @ 15V	-	Surface Mount	DO-214AA, SMB	DO-214BA	-55°C ~ 150°C
UPS5819E3TR7	Microsemi Corporation	DIODE SCHOTTKY 40V 1A POWERMITE1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 40V Capacitance @ Vr, F: 60pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: DO-216AA Supplier Device Package: Powermite 1 (DO216-AA) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-216AA	库存617,352	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 40V	60pF @ 5V, 1MHz	Surface Mount	DO-216AA	Powermite 1 (DO216-AA)	-55°C ~ 150°C
UPS5817E3/TR7	Microsemi Corporation	DIODE SCHOTTKY 20V 1A POWERMITE1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-216AA Supplier Device Package: Powermite 1 (DO216-AA) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-216AA	库存81,528	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 20V	-	Surface Mount	DO-216AA	Powermite 1 (DO216-AA)	-55°C ~ 150°C
UPS120E3/TR7	Microsemi Corporation	DIODE SCHOTTKY 20V 1A POWERMITE1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-216AA Supplier Device Package: Powermite 1 (DO216-AA) Operating Temperature - Junction: -55°C ~ 125°C	封装: DO-216AA	库存710,040	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	-	Surface Mount	DO-216AA	Powermite 1 (DO216-AA)	-55°C ~ 125°C
UFR8510	Microsemi Corporation	DIODE GEN PURP 100V DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 975 mV @ 85 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 50 µA @ 100 V Capacitance @ Vr, F: 675pF @ 10V, 1MHz Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	100 V	-	975 mV @ 85 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	50 µA @ 100 V	675pF @ 10V, 1MHz	Stud Mount	DO-203AB, DO-5, Stud	DO-5 (DO-203AB)	-55°C ~ 175°C
UFR8515	Microsemi Corporation	DIODE GEN PURP 150V DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 975 mV @ 85 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 50 µA @ 150 V Capacitance @ Vr, F: 675pF @ 10V, 1MHz Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	150 V	-	975 mV @ 85 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	50 µA @ 150 V	675pF @ 10V, 1MHz	Stud Mount	DO-203AB, DO-5, Stud	DO-5 (DO-203AB)	-55°C ~ 175°C
UFR8520	Microsemi Corporation	DIODE GEN PURP 200V DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 975 mV @ 85 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 50 µA @ 200 V Capacitance @ Vr, F: 675pF @ 10V, 1MHz Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	200 V	-	975 mV @ 85 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	50 µA @ 200 V	675pF @ 10V, 1MHz	Stud Mount	DO-203AB, DO-5, Stud	DO-5 (DO-203AB)	-55°C ~ 175°C
UPDS5100H	Microsemi Corporation	DIODE SCHOTTKY 100V 5A POWERDI5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 710 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: PowerDI™ 5 Supplier Device Package: - Operating Temperature - Junction: -	封装: -	Request a Quote	100 V	5A	710 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	10 µA @ 100 V	-	Surface Mount	PowerDI™ 5	-	-
UPDS3200	Microsemi Corporation	DIODE SCHOTTKY 200V 3A POWERDI5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 780 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: PowerDI™ 5 Supplier Device Package: - Operating Temperature - Junction: -	封装: -	Request a Quote	200 V	3A	780 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	10 µA @ 200 V	-	Surface Mount	PowerDI™ 5	-	-
1N5806-TR	Microsemi Corporation	DIODE GEN PURP 150V 2.5A APAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 2.5A Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 1 µA @ 150 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C	封装: -	库存11,541	150 V	2.5A	875 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 150 V	-	Through Hole	A, Axial	A, Axial	-65°C ~ 175°C
MSC090SMA120S	Microsemi Corporation	MOSFET N-CH 1200V D3PAK Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Supplier Device Package: D3PAK Operating Temperature - Junction: -	封装: -	Request a Quote	-	-	-	-	-	-	-	Surface Mount	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	D3PAK	-
APT50SCE120B	Microsemi Corporation	DIODE SCHOTTKY 1200V 50A TO247 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
APT10SCE65B	Microsemi Corporation	DIODE SCHOTTKY 650V 10A TO247 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
APT10SCE65K	Microsemi Corporation	DIODE SCHOTTKY 650V 10A TO220 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
APT20SCE65B	Microsemi Corporation	DIODE SCHOTTKY 650V 20A TO247 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
UFR8515R	Microsemi Corporation	DIODE GEN PURP 150V DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 975 mV @ 85 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 50 µA @ 150 V Capacitance @ Vr, F: 675pF @ 10V, 1MHz Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	150 V	-	975 mV @ 85 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	50 µA @ 150 V	675pF @ 10V, 1MHz	Stud Mount	DO-203AB, DO-5, Stud	DO-5 (DO-203AB)	-55°C ~ 175°C
UFR8510R	Microsemi Corporation	DIODE GEN PURP 100V DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 975 mV @ 85 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 50 µA @ 100 V Capacitance @ Vr, F: 675pF @ 10V, 1MHz Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	100 V	-	975 mV @ 85 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	50 µA @ 100 V	675pF @ 10V, 1MHz	Stud Mount	DO-203AB, DO-5, Stud	DO-5 (DO-203AB)	-55°C ~ 175°C
UFR8520R	Microsemi Corporation	DIODE GEN PURP 200V 85A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 85A Voltage - Forward (Vf) (Max) @ If: 975 mV @ 85 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 50 µA @ 200 V Capacitance @ Vr, F: 675pF @ 10V, 1MHz Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	200 V	85A	975 mV @ 85 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	50 µA @ 200 V	675pF @ 10V, 1MHz	Stud Mount	DO-203AB, DO-5, Stud	DO-5 (DO-203AB)	-55°C ~ 175°C
APT50SCE65B	Microsemi Corporation	DIODE SCHOTTKY 650V 50A TO247 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
UPS5819E3-TR7	Microsemi Corporation	DIODE SCHOTTKY 40V 1A POWERMITE1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 40 V Capacitance @ Vr, F: 60pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: DO-216AA Supplier Device Package: Powermite 1 (DO216-AA) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存9,492	40 V	1A	550 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 40 V	60pF @ 5V, 1MHz	Surface Mount	DO-216AA	Powermite 1 (DO216-AA)	-55°C ~ 150°C
1N5811-TR	Microsemi Corporation	DIODE GEN PURP 150V 6A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: 5 µA @ 150 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	150 V	6A	875 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	5 µA @ 150 V	-	Through Hole	B, Axial	B, Axial	-65°C ~ 175°C
1N6660DT1	Microsemi Corporation	DIODE SCHOTTKY 45V 15A TO254AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 45 V Capacitance @ Vr, F: 2000pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: TO-254-3, TO-254AA Supplier Device Package: TO-254AA Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	45 V	15A	750 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 45 V	2000pF @ 5V, 1MHz	Through Hole	TO-254-3, TO-254AA	TO-254AA	-65°C ~ 150°C
APT10SCE170B	Microsemi Corporation	DIODE SIL CARB 1.7KV 23A TO247 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1700 V Current - Average Rectified (Io): 23A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 200 µA @ 1700 V Capacitance @ Vr, F: 1120pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247 Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	1700 V	23A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1700 V	1120pF @ 0V, 1MHz	Through Hole	TO-247-2	TO-247	-55°C ~ 175°C
APT10SCE120B	Microsemi Corporation	DIODE SIL CARB 1.2KV 43A TO247 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 43A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 200 µA @ 1200 V Capacitance @ Vr, F: 630pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247 Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	1200 V	43A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	630pF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247	-55°C ~ 175°C
1N6910UTK2AS	Microsemi Corporation	DIODE SCHOTTKY 15V 25A 2THINKEY Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 15 V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 520 mV @ 25 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.2 mA @ 15 V Capacitance @ Vr, F: 2000pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: - Supplier Device Package: 2-ThinKey™ Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	15 V	25A	520 mV @ 25 A	No Recovery Time > 500mA (Io)	-	1.2 mA @ 15 V	2000pF @ 5V, 1MHz	Surface Mount	-	2-ThinKey™	-65°C ~ 150°C
MSC750SMA120S	Microsemi Corporation	MOSFET N-CH 1200V D3PAK Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
1N6660R	Microsemi Corporation	DIODE SCHOTTKY 45V 15A TO254AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 45 V Capacitance @ Vr, F: 2000pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: TO-254-3, TO-254AA Supplier Device Package: TO-254AA Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	45 V	15A	750 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 45 V	2000pF @ 5V, 1MHz	Through Hole	TO-254-3, TO-254AA	TO-254AA	-65°C ~ 150°C
APT20SCE170B	Microsemi Corporation	DIODE SCHOTTKY 1700V 20A TO247 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
APT20SCE120B	Microsemi Corporation	DIODE SCHOTTKY 1200V 20A TO247 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-

UPS840E3/TR13

Microsemi Corporation

DIODE SCHOTTKY 40V 8A POWERMITE3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 450mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Powermite?3
Supplier Device Package: Powermite 3
Operating Temperature - Junction: -55°C ~ 125°C

封装: Powermite?3

库存72,336

40V

8A

450mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

5mA @ 40V

-

Surface Mount

Powermite?3

Powermite 3

-55°C ~ 125°C

LSM115JE3/TR13

Microsemi Corporation

DIODE SCHOTTKY 15V 1A DO214BA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 15V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 220mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10mA @ 15V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214BA
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AA, SMB

库存24,000

15V

1A

220mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

10mA @ 15V

-

Surface Mount

DO-214AA, SMB

DO-214BA

-55°C ~ 150°C

UPS5819E3TR7

Microsemi Corporation

DIODE SCHOTTKY 40V 1A POWERMITE1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 40V
Capacitance @ Vr, F: 60pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-216AA
Supplier Device Package: Powermite 1 (DO216-AA)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-216AA

库存617,352

40V

1A

550mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 40V

60pF @ 5V, 1MHz

Surface Mount

DO-216AA

Powermite 1 (DO216-AA)

-55°C ~ 150°C

UPS5817E3/TR7

Microsemi Corporation

DIODE SCHOTTKY 20V 1A POWERMITE1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-216AA
Supplier Device Package: Powermite 1 (DO216-AA)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-216AA

库存81,528

20V

1A

450mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 20V

-

Surface Mount

DO-216AA

Powermite 1 (DO216-AA)

-55°C ~ 150°C

UPS120E3/TR7

Microsemi Corporation

DIODE SCHOTTKY 20V 1A POWERMITE1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-216AA
Supplier Device Package: Powermite 1 (DO216-AA)
Operating Temperature - Junction: -55°C ~ 125°C

封装: DO-216AA

库存710,040

20V

1A

450mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

400µA @ 20V

-

Surface Mount

DO-216AA

Powermite 1 (DO216-AA)

-55°C ~ 125°C

UFR8510

Microsemi Corporation

DIODE GEN PURP 100V DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 85 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Capacitance @ Vr, F: 675pF @ 10V, 1MHz
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

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100 V

-

975 mV @ 85 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

50 µA @ 100 V

675pF @ 10V, 1MHz

Stud Mount

DO-203AB, DO-5, Stud

DO-5 (DO-203AB)

-55°C ~ 175°C

UFR8515

Microsemi Corporation

DIODE GEN PURP 150V DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 85 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Capacitance @ Vr, F: 675pF @ 10V, 1MHz
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

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150 V

-

975 mV @ 85 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

50 µA @ 150 V

675pF @ 10V, 1MHz

Stud Mount

DO-203AB, DO-5, Stud

DO-5 (DO-203AB)

-55°C ~ 175°C

UFR8520

Microsemi Corporation

DIODE GEN PURP 200V DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 85 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Capacitance @ Vr, F: 675pF @ 10V, 1MHz
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

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200 V

-

975 mV @ 85 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

50 µA @ 200 V

675pF @ 10V, 1MHz

Stud Mount

DO-203AB, DO-5, Stud

DO-5 (DO-203AB)

-55°C ~ 175°C

UPDS5100H

Microsemi Corporation

DIODE SCHOTTKY 100V 5A POWERDI5

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

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100 V

5A

710 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

10 µA @ 100 V

-

Surface Mount

PowerDI™ 5

-

UPDS3200

Microsemi Corporation

DIODE SCHOTTKY 200V 3A POWERDI5

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

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200 V

3A

780 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

10 µA @ 200 V

-

Surface Mount

PowerDI™ 5

-

1N5806-TR

Microsemi Corporation

DIODE GEN PURP 150V 2.5A APAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 2.5A
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

库存11,541

150 V

2.5A

875 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

1 µA @ 150 V

-

Through Hole

A, Axial

-65°C ~ 175°C

MSC090SMA120S

Microsemi Corporation

MOSFET N-CH 1200V D3PAK

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Supplier Device Package: D3PAK
Operating Temperature - Junction: -

封装: -

Request a Quote

-

Surface Mount

TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

D3PAK

-

APT50SCE120B

Microsemi Corporation

DIODE SCHOTTKY 1200V 50A TO247

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

Request a Quote

-

APT10SCE65B

Microsemi Corporation

DIODE SCHOTTKY 650V 10A TO247

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

Request a Quote

-

APT10SCE65K

Microsemi Corporation

DIODE SCHOTTKY 650V 10A TO220

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

Request a Quote

-

APT20SCE65B

Microsemi Corporation

DIODE SCHOTTKY 650V 20A TO247

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

Request a Quote

-

UFR8515R

Microsemi Corporation

DIODE GEN PURP 150V DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 85 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Capacitance @ Vr, F: 675pF @ 10V, 1MHz
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

Request a Quote

150 V

-

975 mV @ 85 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

50 µA @ 150 V

675pF @ 10V, 1MHz

Stud Mount

DO-203AB, DO-5, Stud

DO-5 (DO-203AB)

-55°C ~ 175°C

UFR8510R

Microsemi Corporation

DIODE GEN PURP 100V DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 85 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Capacitance @ Vr, F: 675pF @ 10V, 1MHz
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

Request a Quote

100 V

-

975 mV @ 85 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

50 µA @ 100 V

675pF @ 10V, 1MHz

Stud Mount

DO-203AB, DO-5, Stud

DO-5 (DO-203AB)

-55°C ~ 175°C

UFR8520R

Microsemi Corporation

DIODE GEN PURP 200V 85A DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 85A
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 85 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Capacitance @ Vr, F: 675pF @ 10V, 1MHz
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

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200 V

85A

975 mV @ 85 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

50 µA @ 200 V

675pF @ 10V, 1MHz

Stud Mount

DO-203AB, DO-5, Stud

DO-5 (DO-203AB)

-55°C ~ 175°C

APT50SCE65B

Microsemi Corporation

DIODE SCHOTTKY 650V 50A TO247

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

Request a Quote

-

UPS5819E3-TR7

Microsemi Corporation

DIODE SCHOTTKY 40V 1A POWERMITE1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Capacitance @ Vr, F: 60pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-216AA
Supplier Device Package: Powermite 1 (DO216-AA)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存9,492

40 V

1A

550 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1 mA @ 40 V

60pF @ 5V, 1MHz

Surface Mount

DO-216AA

Powermite 1 (DO216-AA)

-55°C ~ 150°C

1N5811-TR

Microsemi Corporation

DIODE GEN PURP 150V 6A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: B, Axial
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

150 V

6A

875 mV @ 4 A

Fast Recovery =< 500ns, > 200mA (Io)

30 ns

5 µA @ 150 V

-

Through Hole

B, Axial

-65°C ~ 175°C

1N6660DT1

Microsemi Corporation

DIODE SCHOTTKY 45V 15A TO254AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Capacitance @ Vr, F: 2000pF @ 5V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-254-3, TO-254AA
Supplier Device Package: TO-254AA
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

Request a Quote

45 V

15A

750 mV @ 15 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1 mA @ 45 V

2000pF @ 5V, 1MHz

Through Hole

TO-254-3, TO-254AA

TO-254AA

-65°C ~ 150°C

APT10SCE170B

Microsemi Corporation

DIODE SIL CARB 1.7KV 23A TO247

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1700 V
Current - Average Rectified (Io): 23A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 200 µA @ 1700 V
Capacitance @ Vr, F: 1120pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

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1700 V

23A

1.8 V @ 10 A

No Recovery Time > 500mA (Io)

0 ns

200 µA @ 1700 V

1120pF @ 0V, 1MHz

Through Hole

TO-247-2

TO-247

-55°C ~ 175°C

APT10SCE120B

Microsemi Corporation

DIODE SIL CARB 1.2KV 43A TO247

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 43A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Capacitance @ Vr, F: 630pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

Request a Quote

1200 V

43A

1.8 V @ 10 A

No Recovery Time > 500mA (Io)

0 ns

200 µA @ 1200 V

630pF @ 1V, 1MHz

Through Hole

TO-247-2

TO-247

-55°C ~ 175°C

1N6910UTK2AS

Microsemi Corporation

DIODE SCHOTTKY 15V 25A 2THINKEY

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 15 V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 25 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.2 mA @ 15 V
Capacitance @ Vr, F: 2000pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: 2-ThinKey™
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

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15 V

25A

520 mV @ 25 A

No Recovery Time > 500mA (Io)

-

1.2 mA @ 15 V

2000pF @ 5V, 1MHz

Surface Mount

-

2-ThinKey™

-65°C ~ 150°C

MSC750SMA120S

Microsemi Corporation

MOSFET N-CH 1200V D3PAK

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

Request a Quote

-

1N6660R

Microsemi Corporation

DIODE SCHOTTKY 45V 15A TO254AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Capacitance @ Vr, F: 2000pF @ 5V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-254-3, TO-254AA
Supplier Device Package: TO-254AA
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

Request a Quote

45 V

15A

750 mV @ 15 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1 mA @ 45 V

2000pF @ 5V, 1MHz

Through Hole

TO-254-3, TO-254AA

TO-254AA

-65°C ~ 150°C

APT20SCE170B

Microsemi Corporation

DIODE SCHOTTKY 1700V 20A TO247

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

Request a Quote

-

APT20SCE120B

Microsemi Corporation

DIODE SCHOTTKY 1200V 20A TO247

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

Request a Quote

-