Micron Technology Inc. 产品

MT29E512G08CKCBBH7-6:B TR

Micron Technology Inc.

IC FLASH 512GBIT 167MHZ 152TBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 512Gb (64G x 8)
• Memory Interface: Parallel
• Clock Frequency: 167MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

MT46V32M16TG-5B IT:J TR

Micron Technology Inc.

IC SDRAM 512MBIT 200MHZ 66TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR
• Memory Size: 512Mb (32M x 16)
• Memory Interface: Parallel
• Clock Frequency: 200MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 700ps
• Voltage - Supply: 2.5 V ~ 2.7 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 66-TSSOP (0.400", 10.16mm Width)
• Supplier Device Package: 66-TSOP

封装: 66-TSSOP (0.400", 10.16mm Width)

M58WR032KB70ZB6E

Micron Technology Inc.

IC FLASH 32MBIT 70NS 56VFBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 32Mb (2M x 16)
• Memory Interface: Parallel
• Clock Frequency: 66MHz
• Write Cycle Time - Word, Page: 70ns
• Access Time: 70ns
• Voltage - Supply: 1.7 V ~ 2 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 56-VFBGA
• Supplier Device Package: 56-VFBGA (7.7x9)

封装: 56-VFBGA

N25Q512A13GSF40F TR

Micron Technology Inc.

IC FLASH NOR 128MX4 SOIC

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 512Mb (128M x 4)
• Memory Interface: SPI
• Clock Frequency: 108MHz
• Write Cycle Time - Word, Page: 8ms, 5ms
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

MT46H128M32L2KQ-6 IT:B

Micron Technology Inc.

IC SDRAM 4GBIT 167MHZ 168WFBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR
• Memory Size: 4Gb (128M x 32)
• Memory Interface: Parallel
• Clock Frequency: 166MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 5.0ns
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 168-WFBGA
• Supplier Device Package: 168-WFBGA (12x12)

封装: 168-WFBGA

MT48H4M16LFB4-8 IT:H TR

Micron Technology Inc.

IC SDRAM 64MBIT 125MHZ 54VFBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPSDR
• Memory Size: 64Mb (4M x 16)
• Memory Interface: Parallel
• Clock Frequency: 125MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 6ns
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 54-VFBGA
• Supplier Device Package: 54-VFBGA (8x8)

封装: 54-VFBGA

PC28F640P33B85A

Micron Technology Inc.

IC FLASH 64MBIT 85NS 64EASYBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 64Mb (4M x 16)
• Memory Interface: Parallel
• Clock Frequency: 52MHz
• Write Cycle Time - Word, Page: 85ns
• Access Time: 85ns
• Voltage - Supply: 2.3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 64-TBGA
• Supplier Device Package: 64-EasyBGA (10x13)

封装: 64-TBGA

MT46V64M16P-6T IT:A TR

Micron Technology Inc.

IC SDRAM 1GBIT 167MHZ 66TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR
• Memory Size: 1Gb (64M x 16)
• Memory Interface: Parallel
• Clock Frequency: 167MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 700ps
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 66-TSSOP (0.400", 10.16mm Width)
• Supplier Device Package: 66-TSOP

封装: 66-TSSOP (0.400", 10.16mm Width)

MT48V4M32LFB5-10 IT:G TR

Micron Technology Inc.

IC SDRAM 128MBIT 100MHZ 90VFBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPSDR
• Memory Size: 128Mb (4M x 32)
• Memory Interface: Parallel
• Clock Frequency: 100MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 7ns
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 90-VFBGA
• Supplier Device Package: 90-VFBGA (8x13)

封装: 90-VFBGA

MT46V32M16TG-6T:F

Micron Technology Inc.

IC SDRAM 512MBIT 167MHZ 66TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR
• Memory Size: 512Mb (32M x 16)
• Memory Interface: Parallel
• Clock Frequency: 167MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 700ps
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 66-TSSOP (0.400", 10.16mm Width)
• Supplier Device Package: 66-TSOP

封装: 66-TSSOP (0.400", 10.16mm Width)

MT29F8G16ADBDAH4-AIT:D TR

Micron Technology Inc.

IC FLASH 8GBIT 63VFBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 8Gb (512M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

JS28F128J3F75A

Micron Technology Inc.

IC FLASH 128MBIT 75NS 56TSOP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 128Mb (16M x 8, 8M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 75ns
• Access Time: 75ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 56-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 56-TSOP (14x20)

封装: 56-TFSOP (0.724", 18.40mm Width)

N25Q008A11ESC40FS02 TR

Micron Technology Inc.

SERIAL NOR SLC 2MX4 SOIC

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 8Mb (1M x 8)
• Memory Interface: SPI
• Clock Frequency: 108MHz
• Write Cycle Time - Word, Page: 8ms, 5ms
• Access Time: -
• Voltage - Supply: 1.7 V ~ 2 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

M28W160ECB70ZB6E

Micron Technology Inc.

IC FLASH 16MBIT 70NS 46TFBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 16Mb (1M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 70ns
• Access Time: 70ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 46-TFBGA
• Supplier Device Package: 46-TFBGA (6.39x6.37)

封装: 46-TFBGA

MT29F1G08ABAEAWP-IT:E TR

Micron Technology Inc.

IC FLASH 1GBIT 20NS 48TSOP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 1Gb (128M x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 48-TSOP

封装: 48-TFSOP (0.724", 18.40mm Width)

MT40A512M8RH-083E AIT:B

Micron Technology Inc.

IC DRAM 4G PARALLEL 1.2GHZ

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR4
• Memory Size: 4Gb (512M x 8)
• Memory Interface: Parallel
• Clock Frequency: 1.2GHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.14 V ~ 1.26 V
• Operating Temperature: -40°C ~ 95°C (TC)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

MT41K512M16HA-107:A TR

Micron Technology Inc.

IC DRAM 8G PARALLEL 96FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR3L
• Memory Size: 8Gb (512M x 16)
• Memory Interface: Parallel
• Clock Frequency: 933MHz
• Write Cycle Time - Word, Page: -
• Access Time: 20ns
• Voltage - Supply: 1.283 V ~ 1.45 V
• Operating Temperature: 0°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 96-TFBGA
• Supplier Device Package: 96-FBGA (14x9)

封装: 96-TFBGA

MT35XU512ABA1G12-0AUT

Micron Technology Inc.

SERIAL NOR 512M MT35X 45NM IT

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH
• Memory Size: 512Mb (64M x 8)
• Memory Interface: Xccela Bus
• Clock Frequency: 200MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.7 V ~ 2 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 24-TBGA
• Supplier Device Package: 24-TPBGA

封装: 24-TBGA

MT29RZ4C4DZZMGMF-18W.80C

Micron Technology Inc.

IC FLASH RAM 4G PARALLEL 533MHZ

• Memory Type: Non-Volatile
• Memory Format: FLASH, RAM
• Technology: FLASH - NAND, DRAM - LPDDR2
• Memory Size: 4Gb (256M x 16)(NAND), 4G (128M x 32)(LPDDR2)
• Memory Interface: Parallel
• Clock Frequency: 533MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.8V
• Operating Temperature: -25°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

MT40A256M16LY-062E AAT:F TR

Micron Technology Inc.

IC DRAM 4G PARALLEL 96FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR4
• Memory Size: 4Gb (256M x 16)
• Memory Interface: Parallel
• Clock Frequency: 1.6GHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 19ns
• Voltage - Supply: 1.14V ~ 1.26V
• Operating Temperature: -40°C ~ 105°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 96-TFBGA
• Supplier Device Package: 96-FBGA (7.5x13.5)

封装: 96-TFBGA

MT40A512M16TD-062E-AAT-R

Micron Technology Inc.

IC DRAM 4GBIT PARALLEL 96FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR4
• Memory Size: 8Gbit
• Memory Interface: Parallel
• Clock Frequency: 1.6 GHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 19 ns
• Voltage - Supply: 1.14V ~ 1.26V
• Operating Temperature: -40°C ~ 105°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 96-TFBGA
• Supplier Device Package: 96-FBGA (7.5x13)

封装: -

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MT62F2G32D4DS-023-AUT-B-TR

Micron Technology Inc.

LPDDR5 64G 2GX32 FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR5
• Memory Size: 64Gbit
• Memory Interface: Parallel
• Clock Frequency: 2.133 GHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.05V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 200-WFBGA
• Supplier Device Package: 200-WFBGA (10x14.5)

封装: -

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MT53D384M32D2DS-046-WT-ES-E-TR

Micron Technology Inc.

IC DRAM 12GBIT 2.133GHZ 200WFBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR4
• Memory Size: 12Gbit
• Memory Interface: -
• Clock Frequency: 2.133 GHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.1V
• Operating Temperature: -30°C ~ 85°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 200-WFBGA
• Supplier Device Package: 200-WFBGA (10x14.5)

封装: -

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MT62F1536M64D8EK-023-AIT-B

Micron Technology Inc.

LPDDR5 96G 1.5GX64 FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR5
• Memory Size: 96Gbit
• Memory Interface: Parallel
• Clock Frequency: 4.266 GHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -40°C ~ 95°C
• Mounting Type: Surface Mount
• Package / Case: 441-TFBGA
• Supplier Device Package: 441-TFBGA (14x14)

封装: -

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MT30AZZZDDA0TPQS-031-WL-19Q-TR

Micron Technology Inc.

UMCP 2144G

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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MTFC256GBCAQTC-IT

Micron Technology Inc.

MM20H EMMC 2TBIT 153/196 LFBGA I

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

MT29F1T08EBLCEJ4-ES-C-TR

Micron Technology Inc.

TLC 1T 128GX8 VBGA

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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MT62F2G32D4DS-023-AIT-B-TR

Micron Technology Inc.

LPDDR5 64G 2GX32 FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR5
• Memory Size: 64Gbit
• Memory Interface: Parallel
• Clock Frequency: 2.133 GHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.05V
• Operating Temperature: -40°C ~ 95°C
• Mounting Type: Surface Mount
• Package / Case: 200-WFBGA
• Supplier Device Package: 200-WFBGA (10x14.5)

封装: -

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MTFC32GAPALGT-S1-AAT

Micron Technology Inc.

EMMC 256G

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND (SLC)
• Memory Size: 256Gbit
• Memory Interface: eMMC_5.1
• Clock Frequency: 200 MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 153-WFBGA
• Supplier Device Package: 153-WFBGA (11.5x13)

封装: -

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MT29VZZZBD9FQKPR-046-W-G9J

Micron Technology Inc.

ALL IN ONE MCP 1072G

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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