页 94 - Micron Technology Inc. 产品 - 存储器

零件编号	制造商	描述	封装	库存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MT25QL01GBBB8E12-0AUT TR	Micron Technology Inc.	IC FLASH 1G SPI 133MHZ 24TPBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Gb (128M x 8) Memory Interface: SPI Clock Frequency: 133MHz Write Cycle Time - Word, Page: 8ms, 2.8ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-T-PBGA (6x8)	封装: 24-TBGA	库存6,224	FLASH	FLASH - NOR	1Gb (128M x 8)	SPI	133MHz	8ms, 2.8ms	-	2.7 V ~ 3.6 V	-40°C ~ 125°C (TA)	Surface Mount	24-TBGA	24-T-PBGA (6x8)
EDFA164A2PP-GD-F-R TR	Micron Technology Inc.	IC DRAM 16G PARALLEL 800MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 16Gb (256M x 64) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存2,112	DRAM	SDRAM - Mobile LPDDR3	16Gb (256M x 64)	Parallel	800MHz	-	-	1.14 V ~ 1.95 V	-30°C ~ 85°C (TC)	-	-	-
EDB8164B4PT-1DIT-F-R TR	Micron Technology Inc.	IC DRAM 8G PARALLEL 533MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 8Gb (128M x 64) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存5,856	DRAM	SDRAM - Mobile LPDDR2	8Gb (128M x 64)	Parallel	533MHz	-	-	1.14 V ~ 1.95 V	-40°C ~ 85°C (TC)	-	-	-
EDB8164B4PT-1D-F-R TR	Micron Technology Inc.	IC DRAM 8G PARALLEL 533MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 8Gb (128M x 64) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,000	DRAM	SDRAM - Mobile LPDDR2	8Gb (128M x 64)	Parallel	533MHz	-	-	1.14 V ~ 1.95 V	-30°C ~ 85°C (TC)	-	-	-
EDB8164B4PR-1D-F-R TR	Micron Technology Inc.	IC DRAM 8G PARALLEL 533MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 8Gb (128M x 64) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存7,696	DRAM	SDRAM - Mobile LPDDR2	8Gb (128M x 64)	Parallel	533MHz	-	-	1.14 V ~ 1.95 V	-30°C ~ 85°C (TC)	-	-	-
EDB4432BBBJ-1DAUT-F-R TR	Micron Technology Inc.	IC DRAM 4G PARALLEL 533MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 4Gb (128M x 32) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 125°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,112	DRAM	SDRAM - Mobile LPDDR2	4Gb (128M x 32)	Parallel	533MHz	-	-	1.14 V ~ 1.95 V	-40°C ~ 125°C (TC)	-	-	-
MT29F4T08EUHAFM4-3T:A	Micron Technology Inc.	IC FLASH 4T PARALLEL 333MHZ Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 4Tb (512G x 8) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.5 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存7,184	FLASH	FLASH - NAND	4Tb (512G x 8)	Parallel	333MHz	-	-	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F512G08AUEBBH8-12:B	Micron Technology Inc.	IC FLASH 512G PARALLEL 83MHZ Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 512Gb (64G x 8) Memory Interface: Parallel Clock Frequency: 83MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,160	FLASH	FLASH - NAND	512Gb (64G x 8)	Parallel	83MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT53D1G64D8NZ-046 WT:E	Micron Technology Inc.	IC DRAM 64G 2133MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 64Gb (1G x 64) Memory Interface: - Clock Frequency: 2133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,368	DRAM	SDRAM - Mobile LPDDR4	64Gb (1G x 64)	-	2133MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53D1024M64D8NW-046 WT:D	Micron Technology Inc.	IC DRAM 64G 2133MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 64Gb (1G x 64) Memory Interface: - Clock Frequency: 2133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存7,280	DRAM	SDRAM - Mobile LPDDR4	64Gb (1G x 64)	-	2133MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MTFC256GAOAMAM-WT	Micron Technology Inc.	IC FLASH 2T MMC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 2Tb (256G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,960	FLASH	FLASH - NAND	2Tb (256G x 8)	MMC	-	-	-	-	-25°C ~ 85°C (TA)	-	-	-
MTFC128GAOANEA-WT	Micron Technology Inc.	IC FLASH 1T MMC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Tb (128G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存7,760	FLASH	FLASH - NAND	1Tb (128G x 8)	MMC	-	-	-	-	-25°C ~ 85°C (TA)	-	-	-
MT53D768M64D8SQ-046 WT:E	Micron Technology Inc.	IC DRAM 48G 2133MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 48Gb (768M x 64) Memory Interface: - Clock Frequency: 2133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存7,840	DRAM	SDRAM - Mobile LPDDR4	48Gb (768M x 64)	-	2133MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53D768M64D8NZ-046 WT:E	Micron Technology Inc.	IC DRAM 48G 2133MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 48Gb (768M x 64) Memory Interface: - Clock Frequency: 2133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,032	DRAM	SDRAM - Mobile LPDDR4	48Gb (768M x 64)	-	2133MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53D2048M32D8QD-053 WT:D	Micron Technology Inc.	IC DRAM 64G 1866MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 64Gb (2G x 32) Memory Interface: - Clock Frequency: 1866MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存7,600	DRAM	SDRAM - Mobile LPDDR4	64Gb (2G x 32)	-	1866MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53D1G64D8SQ-053 WT:E	Micron Technology Inc.	IC DRAM 64G 1866MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 64Gb (1G x 64) Memory Interface: - Clock Frequency: 1866MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,848	DRAM	SDRAM - Mobile LPDDR4	64Gb (1G x 64)	-	1866MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53D1024M64D8WF-053 WT:D	Micron Technology Inc.	IC DRAM 64G 1866MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 64Gb (1G x 64) Memory Interface: - Clock Frequency: 1866MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,136	DRAM	SDRAM - Mobile LPDDR4	64Gb (1G x 64)	-	1866MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53D1024M64D8PM-053 WT:D	Micron Technology Inc.	IC DRAM 64G 1866MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 64Gb (1G x 64) Memory Interface: - Clock Frequency: 1866MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存5,392	DRAM	SDRAM - Mobile LPDDR4	64Gb (1G x 64)	-	1866MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53D1024M64D8NW-053 WT:D	Micron Technology Inc.	IC DRAM 64G 1866MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 64Gb (1G x 64) Memory Interface: - Clock Frequency: 1866MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存2,096	DRAM	SDRAM - Mobile LPDDR4	64Gb (1G x 64)	-	1866MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT40A256M16GE-083E AUT:B	Micron Technology Inc.	IC DRAM 4G PARALLEL 1.2GHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 1.2GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.26 V Operating Temperature: -40°C ~ 125°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (14x9)	封装: 96-TFBGA	库存22,164	DRAM	SDRAM - DDR4	4Gb (256M x 16)	Parallel	1.2GHz	-	-	1.14 V ~ 1.26 V	-40°C ~ 125°C (TC)	Surface Mount	96-TFBGA	96-FBGA (14x9)
MTFC16GAKAENA-4M IT TR	Micron Technology Inc.	IC FLASH 128G MMC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 128Gb (16G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-TBGA Supplier Device Package: 100-TBGA (14x18)	封装: 100-TBGA	库存14,664	FLASH	FLASH - NAND	128Gb (16G x 8)	MMC	-	-	-	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	100-TBGA	100-TBGA (14x18)
MT25QL02GCBB8E12-0SIT	Micron Technology Inc.	IC FLASH 2G SPI 133MHZ 24TPBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 2Gb (256M x 8) Memory Interface: SPI Clock Frequency: 133MHz Write Cycle Time - Word, Page: 8ms, 2.8ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-T-PBGA (6x8)	封装: 24-TBGA	库存12,042	FLASH	FLASH - NOR	2Gb (256M x 8)	SPI	133MHz	8ms, 2.8ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	24-TBGA	24-T-PBGA (6x8)
MT41K512M16HA-125:A TR	Micron Technology Inc.	IC DRAM 8G PARALLEL 96FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 8Gb (512M x 16) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: - Access Time: 13.5ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (14x9)	封装: 96-TFBGA	库存20,430	DRAM	SDRAM - DDR3L	8Gb (512M x 16)	Parallel	800MHz	-	13.5ns	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (14x9)
MTFC16GAKAEJP-4M IT TR	Micron Technology Inc.	IC FLASH 128G MMC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 128Gb (16G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 153-VFBGA Supplier Device Package: 153-VFBGA (11.5x13)	封装: 153-VFBGA	库存5,792	FLASH	FLASH - NAND	128Gb (16G x 8)	MMC	-	-	-	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	153-VFBGA	153-VFBGA (11.5x13)
MT53B128M32D1DS-062 AAT:A	Micron Technology Inc.	IC DRAM 4G 1600MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 4Gb (128M x 32) Memory Interface: - Clock Frequency: 1600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 200-WFBGA Supplier Device Package: -	封装: 200-WFBGA	库存12,636	DRAM	SDRAM - Mobile LPDDR4	4Gb (128M x 32)	-	1600MHz	-	-	1.1V	-40°C ~ 105°C (TA)	Surface Mount	200-WFBGA	-
MTFC8GACAENS-AAT TR	Micron Technology Inc.	IC FLASH 64G MMC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 64Gb (8G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 153-TFBGA Supplier Device Package: 153-TFBGA (11.5x13)	封装: 153-TFBGA	库存14,826	FLASH	FLASH - NAND	64Gb (8G x 8)	MMC	-	-	-	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	153-TFBGA	153-TFBGA (11.5x13)
MTFC8GACAENS-5M AAT TR	Micron Technology Inc.	IC FLASH 64G MMC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 64Gb (8G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 153-TFBGA Supplier Device Package: 153-TFBGA (11.5x13)	封装: 153-TFBGA	库存22,212	FLASH	FLASH - NAND	64Gb (8G x 8)	MMC	-	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	153-TFBGA	153-TFBGA (11.5x13)
MTFC8GACAEDQ-AAT TR	Micron Technology Inc.	IC FLASH 64G MMC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 64Gb (8G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 100-LBGA Supplier Device Package: 100-LBGA (14x18)	封装: 100-LBGA	库存14,796	FLASH	FLASH - NAND	64Gb (8G x 8)	MMC	-	-	-	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	100-LBGA	100-LBGA (14x18)
MT29C4G48MAZBBAKS-48 IT TR	Micron Technology Inc.	IC FLASH 4GB LPDDR 137VFBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存21,252	-	-	-	-	-	-	-	-	-	-	-	-
MT29C4G48MAYBBAMR-48 IT TR	Micron Technology Inc.	IC FLASH LPDRAM 6G 130MCP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存12,168	-	-	-	-	-	-	-	-	-	-	-	-

MT25QL01GBBB8E12-0AUT TR

Micron Technology Inc.

IC FLASH 1G SPI 133MHZ 24TPBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Gb (128M x 8)
Memory Interface: SPI
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 8ms, 2.8ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-T-PBGA (6x8)

封装: 24-TBGA

库存6,224

FLASH

FLASH - NOR

1Gb (128M x 8)

SPI

133MHz

8ms, 2.8ms

-

2.7 V ~ 3.6 V

-40°C ~ 125°C (TA)

Surface Mount

24-TBGA

24-T-PBGA (6x8)

EDFA164A2PP-GD-F-R TR

Micron Technology Inc.

IC DRAM 16G PARALLEL 800MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 16Gb (256M x 64)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存2,112

DRAM

SDRAM - Mobile LPDDR3

16Gb (256M x 64)

Parallel

800MHz

-

1.14 V ~ 1.95 V

-30°C ~ 85°C (TC)

-

EDB8164B4PT-1DIT-F-R TR

Micron Technology Inc.

IC DRAM 8G PARALLEL 533MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 8Gb (128M x 64)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存5,856

DRAM

SDRAM - Mobile LPDDR2

8Gb (128M x 64)

Parallel

533MHz

-

1.14 V ~ 1.95 V

-40°C ~ 85°C (TC)

-

EDB8164B4PT-1D-F-R TR

Micron Technology Inc.

IC DRAM 8G PARALLEL 533MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 8Gb (128M x 64)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存4,000

DRAM

SDRAM - Mobile LPDDR2

8Gb (128M x 64)

Parallel

533MHz

-

1.14 V ~ 1.95 V

-30°C ~ 85°C (TC)

-

EDB8164B4PR-1D-F-R TR

Micron Technology Inc.

IC DRAM 8G PARALLEL 533MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 8Gb (128M x 64)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存7,696

DRAM

SDRAM - Mobile LPDDR2

8Gb (128M x 64)

Parallel

533MHz

-

1.14 V ~ 1.95 V

-30°C ~ 85°C (TC)

-

EDB4432BBBJ-1DAUT-F-R TR

Micron Technology Inc.

IC DRAM 4G PARALLEL 533MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 4Gb (128M x 32)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 125°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存4,112

DRAM

SDRAM - Mobile LPDDR2

4Gb (128M x 32)

Parallel

533MHz

-

1.14 V ~ 1.95 V

-40°C ~ 125°C (TC)

-

MT29F4T08EUHAFM4-3T:A

Micron Technology Inc.

IC FLASH 4T PARALLEL 333MHZ

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Tb (512G x 8)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.5 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存7,184

FLASH

FLASH - NAND

4Tb (512G x 8)

Parallel

333MHz

-

2.5 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT29F512G08AUEBBH8-12:B

Micron Technology Inc.

IC FLASH 512G PARALLEL 83MHZ

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 512Gb (64G x 8)
Memory Interface: Parallel
Clock Frequency: 83MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存4,160

FLASH

FLASH - NAND

512Gb (64G x 8)

Parallel

83MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT53D1G64D8NZ-046 WT:E

Micron Technology Inc.

IC DRAM 64G 2133MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 64Gb (1G x 64)
Memory Interface: -
Clock Frequency: 2133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存4,368

DRAM

SDRAM - Mobile LPDDR4

64Gb (1G x 64)

-

2133MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MT53D1024M64D8NW-046 WT:D

Micron Technology Inc.

IC DRAM 64G 2133MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 64Gb (1G x 64)
Memory Interface: -
Clock Frequency: 2133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存7,280

DRAM

SDRAM - Mobile LPDDR4

64Gb (1G x 64)

-

2133MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MTFC256GAOAMAM-WT

Micron Technology Inc.

IC FLASH 2T MMC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Tb (256G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存4,960

FLASH

FLASH - NAND

2Tb (256G x 8)

MMC

-

-25°C ~ 85°C (TA)

-

MTFC128GAOANEA-WT

Micron Technology Inc.

IC FLASH 1T MMC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Tb (128G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存7,760

FLASH

FLASH - NAND

1Tb (128G x 8)

MMC

-

-25°C ~ 85°C (TA)

-

MT53D768M64D8SQ-046 WT:E

Micron Technology Inc.

IC DRAM 48G 2133MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 48Gb (768M x 64)
Memory Interface: -
Clock Frequency: 2133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存7,840

DRAM

SDRAM - Mobile LPDDR4

48Gb (768M x 64)

-

2133MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MT53D768M64D8NZ-046 WT:E

Micron Technology Inc.

IC DRAM 48G 2133MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 48Gb (768M x 64)
Memory Interface: -
Clock Frequency: 2133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存4,032

DRAM

SDRAM - Mobile LPDDR4

48Gb (768M x 64)

-

2133MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MT53D2048M32D8QD-053 WT:D

Micron Technology Inc.

IC DRAM 64G 1866MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 64Gb (2G x 32)
Memory Interface: -
Clock Frequency: 1866MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存7,600

DRAM

SDRAM - Mobile LPDDR4

64Gb (2G x 32)

-

1866MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MT53D1G64D8SQ-053 WT:E

Micron Technology Inc.

IC DRAM 64G 1866MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 64Gb (1G x 64)
Memory Interface: -
Clock Frequency: 1866MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存4,848

DRAM

SDRAM - Mobile LPDDR4

64Gb (1G x 64)

-

1866MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MT53D1024M64D8WF-053 WT:D

Micron Technology Inc.

IC DRAM 64G 1866MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 64Gb (1G x 64)
Memory Interface: -
Clock Frequency: 1866MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,136

DRAM

SDRAM - Mobile LPDDR4

64Gb (1G x 64)

-

1866MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MT53D1024M64D8PM-053 WT:D

Micron Technology Inc.

IC DRAM 64G 1866MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 64Gb (1G x 64)
Memory Interface: -
Clock Frequency: 1866MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存5,392

DRAM

SDRAM - Mobile LPDDR4

64Gb (1G x 64)

-

1866MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MT53D1024M64D8NW-053 WT:D

Micron Technology Inc.

IC DRAM 64G 1866MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 64Gb (1G x 64)
Memory Interface: -
Clock Frequency: 1866MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存2,096

DRAM

SDRAM - Mobile LPDDR4

64Gb (1G x 64)

-

1866MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MT40A256M16GE-083E AUT:B

Micron Technology Inc.

IC DRAM 4G PARALLEL 1.2GHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 1.2GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.26 V
Operating Temperature: -40°C ~ 125°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (14x9)

封装: 96-TFBGA

库存22,164

DRAM

SDRAM - DDR4

4Gb (256M x 16)

Parallel

1.2GHz

-

1.14 V ~ 1.26 V

-40°C ~ 125°C (TC)

Surface Mount

96-TFBGA

96-FBGA (14x9)

MTFC16GAKAENA-4M IT TR

Micron Technology Inc.

IC FLASH 128G MMC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Gb (16G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-TBGA
Supplier Device Package: 100-TBGA (14x18)

封装: 100-TBGA

库存14,664

FLASH

FLASH - NAND

128Gb (16G x 8)

MMC

-

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

100-TBGA

100-TBGA (14x18)

MT25QL02GCBB8E12-0SIT

Micron Technology Inc.

IC FLASH 2G SPI 133MHZ 24TPBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 2Gb (256M x 8)
Memory Interface: SPI
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 8ms, 2.8ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-T-PBGA (6x8)

封装: 24-TBGA

库存12,042

FLASH

FLASH - NOR

2Gb (256M x 8)

SPI

133MHz

8ms, 2.8ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

24-TBGA

24-T-PBGA (6x8)

MT41K512M16HA-125:A TR

Micron Technology Inc.

IC DRAM 8G PARALLEL 96FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 8Gb (512M x 16)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: -
Access Time: 13.5ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (14x9)

封装: 96-TFBGA

库存20,430

DRAM

SDRAM - DDR3L

8Gb (512M x 16)

Parallel

800MHz

-

13.5ns

1.283 V ~ 1.45 V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (14x9)

MTFC16GAKAEJP-4M IT TR

Micron Technology Inc.

IC FLASH 128G MMC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Gb (16G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 153-VFBGA
Supplier Device Package: 153-VFBGA (11.5x13)

封装: 153-VFBGA

库存5,792

FLASH

FLASH - NAND

128Gb (16G x 8)

MMC

-

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

153-VFBGA

153-VFBGA (11.5x13)

MT53B128M32D1DS-062 AAT:A

Micron Technology Inc.

IC DRAM 4G 1600MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 4Gb (128M x 32)
Memory Interface: -
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 200-WFBGA
Supplier Device Package: -

封装: 200-WFBGA

库存12,636

DRAM

SDRAM - Mobile LPDDR4

4Gb (128M x 32)

-

1600MHz

-

1.1V

-40°C ~ 105°C (TA)

Surface Mount

200-WFBGA

-

MTFC8GACAENS-AAT TR

Micron Technology Inc.

IC FLASH 64G MMC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 64Gb (8G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 153-TFBGA
Supplier Device Package: 153-TFBGA (11.5x13)

封装: 153-TFBGA

库存14,826

FLASH

FLASH - NAND

64Gb (8G x 8)

MMC

-

2.7 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

153-TFBGA

153-TFBGA (11.5x13)

MTFC8GACAENS-5M AAT TR

Micron Technology Inc.

IC FLASH 64G MMC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 64Gb (8G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 153-TFBGA
Supplier Device Package: 153-TFBGA (11.5x13)

封装: 153-TFBGA

库存22,212

FLASH

FLASH - NAND

64Gb (8G x 8)

MMC

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

153-TFBGA

153-TFBGA (11.5x13)

MTFC8GACAEDQ-AAT TR

Micron Technology Inc.

IC FLASH 64G MMC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 64Gb (8G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LBGA
Supplier Device Package: 100-LBGA (14x18)

封装: 100-LBGA

库存14,796

FLASH

FLASH - NAND

64Gb (8G x 8)

MMC

-

2.7 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

100-LBGA

100-LBGA (14x18)

MT29C4G48MAZBBAKS-48 IT TR

Micron Technology Inc.

IC FLASH 4GB LPDDR 137VFBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存21,252

-

MT29C4G48MAYBBAMR-48 IT TR

Micron Technology Inc.

IC FLASH LPDRAM 6G 130MCP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存12,168

-