页 7 - IXYS 产品 | 深圳黑森尔电子
联系我们
SalesDept@heisener.com +86-0755-87210559 ext.802
登入/注册
BOM
购物车 0

IXYS 产品

记录 5,468
页  7/183
图片
零件编号
制造商
描述
封装
库存
数量
IXSK40N60BD1
IXYS

IGBT 600V 75A 280W TO264

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
  • Power - Max: 280W
  • Switching Energy: 1.8mJ (off)
  • Input Type: Standard
  • Gate Charge: 190nC
  • Td (on/off) @ 25°C: 50ns/110ns
  • Test Condition: 480V, 40A, 2.7 Ohm, 15V
  • Reverse Recovery Time (trr): 35ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264AA(IXSK)
封装: TO-264-3, TO-264AA
库存6,176
IXFX32N48Q
IXYS

MOSFET N-CH PLUS247

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
库存3,520
IXFN44N50Q
IXYS

MOSFET N-CH 500V 44A SOT-227B

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 44A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500W (Tc)
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227B
  • Package / Case: SOT-227-4, miniBLOC
封装: SOT-227-4, miniBLOC
库存6,592
IXFT30N60Q
IXYS

MOSFET N-CH 600V 30A TO-268(D3)

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500W (Tc)
  • Rds On (Max) @ Id, Vgs: 230 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
库存7,360
IXTP260N055T2
IXYS

MOSFET N-CH 55V 260A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 480W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: TO-220-3
库存3,024
IXFA230N075T2
IXYS

MOSFET N-CH 75V 230A TO-263AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 178nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 480W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (IXFA)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存3,664
IXTA56N15T
IXYS

MOSFET N-CH 150V 56A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 36 mOhm @ 28A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (IXTA)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存4,608
IXTA1R6N100D2
IXYS

MOSFET N-CH 1000V 1.6A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 645pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 10 Ohm @ 800mA, 0V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (IXTA)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存6,320
VMM90-09P
IXYS

MOSFET 2N-CH 900V 85A Y3-LI

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存2,288
MCC94-20IO1B
IXYS

MOD THYRISTOR DUAL 2000V TO240AA

  • Structure: Series Connection - All SCRs
  • Number of SCRs, Diodes: 2 SCRs
  • Voltage - Off State: 2000V
  • Current - On State (It (AV)) (Max): 104A
  • Current - On State (It (RMS)) (Max): 180A
  • Voltage - Gate Trigger (Vgt) (Max): 1.5V
  • Current - Gate Trigger (Igt) (Max): 100mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 1700A, 1800A
  • Current - Hold (Ih) (Max): 150mA
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: TO-240AA
封装: TO-240AA
库存4,976
VTOF70-12IO7
IXYS

RECT BRIDGE 3PH 1200V FO-T-A

  • Structure: Bridge, 3-Phase - All SCRs
  • Number of SCRs, Diodes: 6 SCRs
  • Voltage - Off State: 1200V
  • Current - On State (It (AV)) (Max): 70A
  • Current - On State (It (RMS)) (Max): -
  • Voltage - Gate Trigger (Vgt) (Max): 1.5V
  • Current - Gate Trigger (Igt) (Max): 100mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 600A
  • Current - Hold (Ih) (Max): 200mA
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: FO-T-A
封装: FO-T-A
库存2,272
VVZ70-08IO7
IXYS

RECT BRIDGE 3PH 800V FO-T-A

  • Structure: Bridge, 3-Phase - SCRs/Diodes
  • Number of SCRs, Diodes: 3 SCRs, 3 Diodes
  • Voltage - Off State: 800V
  • Current - On State (It (AV)) (Max): 70A
  • Current - On State (It (RMS)) (Max): -
  • Voltage - Gate Trigger (Vgt) (Max): 1.5V
  • Current - Gate Trigger (Igt) (Max): 100mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 600A
  • Current - Hold (Ih) (Max): 200mA
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: FO-T-A
封装: FO-T-A
库存2,928
MCC56-16IO8B
IXYS

MOD THYRISTOR DUAL 1600V TO240AA

  • Structure: Series Connection - All SCRs
  • Number of SCRs, Diodes: 2 SCRs
  • Voltage - Off State: 1600V
  • Current - On State (It (AV)) (Max): 64A
  • Current - On State (It (RMS)) (Max): 100A
  • Voltage - Gate Trigger (Vgt) (Max): 1.5V
  • Current - Gate Trigger (Igt) (Max): 100mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1600A
  • Current - Hold (Ih) (Max): 200mA
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: TO-240AA
封装: TO-240AA
库存7,120
DGS4-025A
IXYS

DIODE SCHOTTKY 250V 5.4A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 250V
  • Current - Average Rectified (Io): 5.4A
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 700µA @ 250V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: TO-220-2
库存3,248
MDO500-20N1
IXYS

DIODE MODULE 2KV 560A Y1-CU

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2000V
  • Current - Average Rectified (Io): 560A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1200A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30mA @ 2000V
  • Capacitance @ Vr, F: 576pF @ 700V, 1MHz
  • Mounting Type: Chassis Mount
  • Package / Case: Y1-CU
  • Supplier Device Package: Y1-CU
  • Operating Temperature - Junction: -
封装: Y1-CU
库存4,384
DSDI60-14A
IXYS

DIODE GEN PURP 1.4KV 63A TO247AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1400V
  • Current - Average Rectified (Io): 63A
  • Voltage - Forward (Vf) (Max) @ If: 4.1V @ 70A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 300ns
  • Current - Reverse Leakage @ Vr: 2mA @ 1400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: TO-247-2
库存5,376
hot DSSK40-008B
IXYS

DIODE ARRAY SCHOTTKY 80V TO247AD

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io) (per Diode): 20A
  • Voltage - Forward (Vf) (Max) @ If: 580mV @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20mA @ 80V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3 Full Pack
  • Supplier Device Package: TO-247AD
封装: TO-3P-3 Full Pack
库存56,400
DSP8-12AS-TUBE
IXYS

DIODE ARRAY GP 1200V 11A TO263

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 11A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 7A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 1200V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
  • Supplier Device Package: TO-263 (D2Pak)
封装: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
库存4,480
DLA5P800UC
IXYS

DIODE ARRAY GP 800V 5A TO252

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io) (per Diode): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.18V @ 5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252, (D-Pak)
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存6,608
hot DSEP2X61-06A
IXYS

DIODE MODULE 600V 60A SOT227B

  • Diode Configuration: 2 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 60A
  • Voltage - Forward (Vf) (Max) @ If: 2.01V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 650µA @ 600V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227B
封装: SOT-227-4, miniBLOC
库存5,728
VUB120-16NO2
IXYS

RECT BRIDGE 3PH 1600V V2-PACK

  • Diode Type: Three Phase (Braking)
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1600V
  • Current - Average Rectified (Io): 188A
  • Voltage - Forward (Vf) (Max) @ If: 2.7V @ 30A
  • Current - Reverse Leakage @ Vr: 500µA @ 1600V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: V2-PAK
  • Supplier Device Package: V2-PAK
封装: V2-PAK
库存3,392
VUO85-14NO7
IXYS

RECT BRIDGE 3PH 85A 1400V FO-T-A

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1400V
  • Current - Average Rectified (Io): 85A
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
  • Current - Reverse Leakage @ Vr: 500µA @ 1400V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: FO-T-A
  • Supplier Device Package: FO-T-A
封装: FO-T-A
库存3,424
VUO190-18NO7
IXYS

RECT BRIDGE 3PH 1800V PWS-E-1

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1800V
  • Current - Average Rectified (Io): 248A
  • Voltage - Forward (Vf) (Max) @ If: 1.07V @ 80A
  • Current - Reverse Leakage @ Vr: 200µA @ 1800V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: PWS-E1
  • Supplier Device Package: PWS-E1
封装: PWS-E1
库存7,248
IXDI502D1T/R
IXYS

IC MOSF DRVR FAST DUAL INV 6-DFN

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 30 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 7.5ns, 6.5ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VDFN Exposed Pad
  • Supplier Device Package: 6-DFN (4x5)
封装: 6-VDFN Exposed Pad
库存3,280
XOB17-12X1
IXYS

SENSOR MONOCRYSTALLINE MODULE

  • Power (Watts) - Max: 20mW
  • Current @ Pmpp: 39mA
  • Voltage @ Pmpp: 510mV
  • Current Short Circuit (Isc): 42mA
  • Type: Monocrystalline
  • Voltage - Open Circuit: 630mV
  • Operating Temperature: -
  • Package / Case: Cells
  • Size / Dimension: 0.866" L x 0.276" W x 0.063" H (22.00mm x 7.00mm x 1.60mm)
封装: Cells
库存2,826
IXTA05N100HV-TRL
IXYS

MOSFET N-CH 1000V 750MA TO263HV

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000 V
  • Current - Continuous Drain (Id) @ 25°C: 750mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263HV
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封装: -
Request a Quote
IXFH150N30X3
IXYS

MOSFET N-CH 300V 150A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300 V
  • Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 890W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3
封装: -
Request a Quote
IXTA2N100-TRL
IXYS

MOSFET N-CH TO263

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
MCB30P1200LB-TRR
IXYS

SIC 2N-CH 1200V 9SMPD

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 9-PowerSMD
  • Supplier Device Package: 9-SMPD-B
封装: -
Request a Quote
IXYH30N120C4
IXYS

DISC IGBT XPT-GENX4 TO-247AD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 94 A
  • Current - Collector Pulsed (Icm): 166 A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
  • Power - Max: 500 W
  • Switching Energy: 4.8mJ (on), 1.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 57 nC
  • Td (on/off) @ 25°C: 18ns/205ns
  • Test Condition: 960V, 25A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 58 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXYH)
封装: -
Request a Quote