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IXYS |
IGBT 650V 50A 230W TO247AD
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 650V
- Current - Collector (Ic) (Max): 50A
- Current - Collector Pulsed (Icm): 105A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
- Power - Max: 230W
- Switching Energy: 430µJ (on), 350µJ (off)
- Input Type: Standard
- Gate Charge: 30nC
- Td (on/off) @ 25°C: 19ns/80ns
- Test Condition: 400V, 20A, 20 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXYH)
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封装: TO-247-3 |
库存6,208 |
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IXYS |
MODULE IGBT CBI E2
- IGBT Type: NPT
- Configuration: Three Phase Inverter with Brake
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 50A
- Power - Max: 225W
- Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 35A
- Current - Collector Cutoff (Max): 1.1mA
- Input Capacitance (Cies) @ Vce: 1.65nF @ 25V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E2
- Supplier Device Package: E2
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封装: E2 |
库存7,600 |
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IXYS |
MOSFET N-CH PLUS247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 6.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 960W (Tc)
- Rds On (Max) @ Id, Vgs: 230 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS247?-3
- Package / Case: TO-247-3
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封装: TO-247-3 |
库存3,040 |
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IXYS |
MOSFET N-CH 1000V 14A TO-268
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Rds On (Max) @ Id, Vgs: 750 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
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封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
库存4,336 |
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IXYS |
MOSFET N-CH 500V 32A PLUS247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5450pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Rds On (Max) @ Id, Vgs: 150 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS247?-3
- Package / Case: TO-247-3
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封装: TO-247-3 |
库存118,140 |
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IXYS |
MOSFET N-CH 500V 20A TO-263AA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1.5mA
- Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 380W (Tc)
- Rds On (Max) @ Id, Vgs: 300 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (IXFA)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存2,320 |
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IXYS |
MOSFET N-CH 250V 180A PLUS247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 345nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1390W (Tc)
- Rds On (Max) @ Id, Vgs: 12.9 mOhm @ 60A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS247?-3
- Package / Case: TO-247-3
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封装: TO-247-3 |
库存7,120 |
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IXYS |
THYRISTOR PHASE THRU TO263
- Triac Type: Standard
- Voltage - Off State: 1200V (1.2kV)
- Current - On State (It (RMS)) (Max): 44A
- Voltage - Gate Trigger (Vgt) (Max): 1.3V
- Current - Non Rep. Surge 50, 60Hz (Itsm): 200A, 215A
- Current - Gate Trigger (Igt) (Max): 40mA
- Current - Hold (Ih) (Max): 50mA
- Configuration: Single
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 (D2Pak-HV)
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封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存7,584 |
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IXYS |
SCR DUAL 1600V 520A Y1-CU
- Structure: Series Connection - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 1600V
- Current - On State (It (AV)) (Max): 320A
- Current - On State (It (RMS)) (Max): 520A
- Voltage - Gate Trigger (Vgt) (Max): 2V
- Current - Gate Trigger (Igt) (Max): 150mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 9200A, 10100A
- Current - Hold (Ih) (Max): 150mA
- Operating Temperature: -40°C ~ 140°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Y1-CU
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封装: Y1-CU |
库存5,392 |
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IXYS |
DIODE GEN PURP 2.2KV 30A TO263
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2200V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.26V @ 30A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40µA @ 2200V
- Capacitance @ Vr, F: 7pF @ 700V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 (D2Pak)
- Operating Temperature - Junction: -55°C ~ 175°C
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封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存5,664 |
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IXYS |
DIODE ARRAY SCHOTTKY 180V TO220
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 180V
- Current - Average Rectified (Io) (per Diode): 23A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 7.5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2mA @ 180V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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封装: TO-220-3 |
库存7,024 |
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IXYS |
DIODE ARRAY GP 200V 15A TO247AD
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io) (per Diode): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 1µA @ 200V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
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封装: TO-247-3 |
库存4,080 |
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IXYS |
DIODE ARRAY GP 400V 10A TO220AB
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io) (per Diode): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.32V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 45ns
- Current - Reverse Leakage @ Vr: 1µA @ 400V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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封装: TO-220-3 |
库存4,320 |
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IXYS |
RECT BRIDGE 3PH 140A 1400V PWS-C
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1400V
- Current - Average Rectified (Io): 140A
- Voltage - Forward (Vf) (Max) @ If: 1.09V @ 40A
- Current - Reverse Leakage @ Vr: 100µA @ 1400V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: PWS-C
- Supplier Device Package: PWS-C
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封装: PWS-C |
库存6,576 |
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IXYS |
IC GATE DRIVER 4A 8-DIP
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 30 V
- Logic Voltage - VIL, VIH: 0.8V, 3V
- Current - Peak Output (Source, Sink): 4A, 4A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 9ns, 8ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
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封装: 8-DIP (0.300", 7.62mm) |
库存25,440 |
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IXYS |
IC MOSFET DRVR LS 4A DUAL 16SOIC
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 35 V
- Logic Voltage - VIL, VIH: 0.8V, 2.5V
- Current - Peak Output (Source, Sink): 4A, 4A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 16ns, 13ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOIC
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封装: 16-SOIC (0.295", 7.50mm Width) |
库存4,832 |
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IXYS |
IXZ631DF12N100 1000V 12A INTEGRA
- Driven Configuration: High-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 8 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 3.5V
- Current - Peak Output (Source, Sink): 72A, 72A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): 1000V
- Rise / Fall Time (Typ): 2.4ns, 1.55ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 10-SMD, Flat Lead
- Supplier Device Package: 10-SMD
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封装: 10-SMD, Flat Lead |
库存5,696 |
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IXYS |
IGBT 1200V 9A 45W TO252AA
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 9 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
- Power - Max: 45 W
- Switching Energy: 400µJ (on), 300µJ (off)
- Input Type: Standard
- Gate Charge: 12 nC
- Td (on/off) @ 25°C: -
- Test Condition: 600V, 3A, 330Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252AA
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封装: - |
Request a Quote |
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IXYS |
SCR 1.6KV 3592A W11
- Voltage - Off State: 1.6 kV
- Voltage - Gate Trigger (Vgt) (Max): 3 V
- Current - Gate Trigger (Igt) (Max): 300 mA
- Voltage - On State (Vtm) (Max): 1.29 V
- Current - On State (It (AV)) (Max): 1802 A
- Current - On State (It (RMS)) (Max): 3592 A
- Current - Hold (Ih) (Max): 1 A
- Current - Off State (Max): 100 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 32500A @ 50Hz
- SCR Type: Standard Recovery
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Clamp On
- Package / Case: TO-200AC, K-PUK
- Supplier Device Package: W11
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封装: - |
Request a Quote |
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IXYS |
TRIAC ALTERNISTOR 800V 35A TO263
- Triac Type: Alternistor - Snubberless
- Voltage - Off State: 800 V
- Current - On State (It (RMS)) (Max): 35 A
- Voltage - Gate Trigger (Vgt) (Max): 1 V
- Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
- Current - Gate Trigger (Igt) (Max): 35 mA
- Current - Hold (Ih) (Max): 60 mA
- Configuration: Single
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 (D2PAK)
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封装: - |
库存3,000 |
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IXYS |
DIODE GEN PURP 1.2KV 90A TO268AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 90A
- Voltage - Forward (Vf) (Max) @ If: 2.69 V @ 90 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 85 ns
- Current - Reverse Leakage @ Vr: 1 mA @ 1200 V
- Capacitance @ Vr, F: 48pF @ 600V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268AA (D3Pak-HV)
- Operating Temperature - Junction: -55°C ~ 175°C
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封装: - |
库存90 |
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IXYS |
SCR 1.2KV 1268A W58
- Voltage - Off State: 1.2 kV
- Voltage - Gate Trigger (Vgt) (Max): 3 V
- Current - Gate Trigger (Igt) (Max): 200 mA
- Voltage - On State (Vtm) (Max): 1.85 V
- Current - On State (It (AV)) (Max): 633 A
- Current - On State (It (RMS)) (Max): 1268 A
- Current - Hold (Ih) (Max): 1 A
- Current - Off State (Max): 60 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 6900A @ 50Hz
- SCR Type: Standard Recovery
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: TO-200AB, B-PuK
- Supplier Device Package: W58
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封装: - |
Request a Quote |
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IXYS |
MOSFET N-CH 1000V 56A SOT227B
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 6V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 9150 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1200W (Tc)
- Rds On (Max) @ Id, Vgs: 89mOhm @ 35A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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封装: - |
库存117 |
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IXYS |
SCR 1.8KV 5200A W70
- Voltage - Off State: 1.8 kV
- Voltage - Gate Trigger (Vgt) (Max): 3 V
- Current - Gate Trigger (Igt) (Max): 300 mA
- Voltage - On State (Vtm) (Max): 2 V
- Current - On State (It (AV)) (Max): 2600 A
- Current - On State (It (RMS)) (Max): 5200 A
- Current - Hold (Ih) (Max): 1 A
- Current - Off State (Max): 100 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 33000A @ 50Hz
- SCR Type: Standard Recovery
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Clamp On
- Package / Case: TO-200AC, K-PUK
- Supplier Device Package: W70
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封装: - |
Request a Quote |
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IXYS |
MOSFET N-CH 100V 64A TO263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3620 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 357W (Tc)
- Rds On (Max) @ Id, Vgs: 32mOhm @ 32A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2PAK)
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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封装: - |
Request a Quote |
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IXYS |
MOSFET P-CH 200V 32A TO263
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 130mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2PAK)
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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封装: - |
Request a Quote |
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IXYS |
IGBT DISCRETE TO-247
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 120 A
- Current - Collector Pulsed (Icm): 230 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
- Power - Max: 680 W
- Switching Energy: 5.55mJ (on), 1.55mJ (off)
- Input Type: Standard
- Gate Charge: 92 nC
- Td (on/off) @ 25°C: 21ns/140ns
- Test Condition: 960V, 32A, 5Ohm, 15V
- Reverse Recovery Time (trr): 55 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXTH)
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封装: - |
Request a Quote |
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IXYS |
SCR 1.8KV W11
- Voltage - Off State: 1.8 kV
- Voltage - Gate Trigger (Vgt) (Max): -
- Current - Gate Trigger (Igt) (Max): -
- Voltage - On State (Vtm) (Max): -
- Current - On State (It (AV)) (Max): 1800 A
- Current - On State (It (RMS)) (Max): -
- Current - Hold (Ih) (Max): -
- Current - Off State (Max): -
- Current - Non Rep. Surge 50, 60Hz (Itsm): 1448A @ 50Hz
- SCR Type: Standard Recovery
- Operating Temperature: -
- Mounting Type: Clamp On
- Package / Case: TO-200AC, K-PUK
- Supplier Device Package: W11
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封装: - |
Request a Quote |
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IXYS |
IGBT 3000V 80A TO268HV
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 3000 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 280 A
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 32A
- Power - Max: 400 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 142 nC
- Td (on/off) @ 25°C: 50ns/160ns
- Test Condition: 1250V, 32A, 2Ohm, 15V
- Reverse Recovery Time (trr): 1500 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268HV (IXBT)
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封装: - |
Request a Quote |
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IXYS |
DIODE GEN PURP 1.2KV 45A TO268AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 45A
- Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 45 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
- Capacitance @ Vr, F: 18pF @ 400V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268AA (D3Pak-HV)
- Operating Temperature - Junction: -40°C ~ 175°C
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