页 144 - IXYS 产品 | 深圳黑森尔电子
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IXYS 产品

记录 5,468
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hot IXSH30N60AU1
IXYS

IGBT 600V 50A 200W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 30A
  • Power - Max: 200W
  • Switching Energy: 2.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 110nC
  • Td (on/off) @ 25°C: 60ns/400ns
  • Test Condition: 480V, 30A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): 50ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXSH)
封装: TO-247-3
库存33,624
hot IXGH20N60A
IXYS

IGBT 600V 40A 150W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
  • Power - Max: 150W
  • Switching Energy: 1.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 100ns/600ns
  • Test Condition: 480V, 20A, 82 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
封装: TO-247-3
库存34,008
IXYH8N250C
IXYS

IGBT 2500V 29A TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 2500V
  • Current - Collector (Ic) (Max): 29A
  • Current - Collector Pulsed (Icm): 70A
  • Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A
  • Power - Max: 280W
  • Switching Energy: 2.6mJ (on), 1.07mJ (off)
  • Input Type: Standard
  • Gate Charge: 45nC
  • Td (on/off) @ 25°C: 11ns/180ns
  • Test Condition: 1250V, 8A, 15 Ohm, 15V
  • Reverse Recovery Time (trr): 5ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
封装: TO-247-3
库存5,248
IXXR100N60B3H1
IXYS

IGBT 600V 145A 400W ISOPLUS247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 145A
  • Current - Collector Pulsed (Icm): 440A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
  • Power - Max: 400W
  • Switching Energy: 1.9mJ (on), 2mJ (off)
  • Input Type: Standard
  • Gate Charge: 143nC
  • Td (on/off) @ 25°C: 30ns/120ns
  • Test Condition: 360V, 70A, 2 Ohm, 15V
  • Reverse Recovery Time (trr): 140ns
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: ISOPLUS247?
封装: TO-247-3
库存5,808
IXBH16N170
IXYS

IGBT 1700V 40A 250W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 16A
  • Power - Max: 250W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 72nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 1.32µs
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXBH)
封装: TO-247-3
库存9,132
IXYK120N120C3
IXYS

IGBT 1200V 240A 1500W TO264

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 240A
  • Current - Collector Pulsed (Icm): 700A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 120A
  • Power - Max: 1500W
  • Switching Energy: 6.75mJ (on), 5.1mJ (off)
  • Input Type: Standard
  • Gate Charge: 412nC
  • Td (on/off) @ 25°C: 35ns/176ns
  • Test Condition: 600V, 100A, 1 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 (IXYK)
封装: TO-264-3, TO-264AA
库存8,520
IXSN80N60AU1
IXYS

IGBT 100A 600V SOT-227B

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 160A
  • Power - Max: 500W
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 80A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 8.5nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227B
封装: SOT-227-4, miniBLOC
库存4,272
IXXN110N65C4H1
IXYS

IGBT 650V 210A 750W SOT227B

  • IGBT Type: PT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 210A
  • Power - Max: 750W
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 110A
  • Current - Collector Cutoff (Max): 50µA
  • Input Capacitance (Cies) @ Vce: 3.69nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227B
封装: SOT-227-4, miniBLOC
库存7,476
IXFN32N60
IXYS

MOSFET N-CH 600V 32A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 32A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 325nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 520W (Tc)
  • Rds On (Max) @ Id, Vgs: 250 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227B
  • Package / Case: SOT-227-4, miniBLOC
封装: SOT-227-4, miniBLOC
库存6,048
IXTK200N10P
IXYS

MOSFET N-CH 100V 200A TO-264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 (IXTK)
  • Package / Case: TO-264-3, TO-264AA
封装: TO-264-3, TO-264AA
库存3,424
IXTH120N15T
IXYS

MOSFET N-CH 150V 120A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3
封装: TO-247-3
库存6,336
hot IXTH3N100P
IXYS

MOSFET N-CH 1000V 3A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.8 Ohm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3
封装: TO-247-3
库存390,000
IXFB40N110Q3
IXYS

MOSFET N-CH 1100V 40A PLUS264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1100V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 6.5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1560W (Tc)
  • Rds On (Max) @ Id, Vgs: 260 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS264?
  • Package / Case: TO-264-3, TO-264AA
封装: TO-264-3, TO-264AA
库存6,864
hot IXTP44N10T
IXYS

MOSFET N-CH 100V 44A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1262pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 130W (Tc)
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 22A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: TO-220-3
库存60,192
hot IXFX140N30P
IXYS

MOSFET N-CH 300V 140A PLUS 247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1040W (Tc)
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 70A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247?-3
  • Package / Case: TO-247-3
封装: TO-247-3
库存34,464
MCD312-14IO1
IXYS

MOD THYRISTOR/DIODE 1400V Y1-CU

  • Structure: Series Connection - SCR/Diode
  • Number of SCRs, Diodes: 1 SCR, 1 Diode
  • Voltage - Off State: 1400V
  • Current - On State (It (AV)) (Max): 320A
  • Current - On State (It (RMS)) (Max): 520A
  • Voltage - Gate Trigger (Vgt) (Max): 2V
  • Current - Gate Trigger (Igt) (Max): 150mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 9200A, 10100A
  • Current - Hold (Ih) (Max): 150mA
  • Operating Temperature: -40°C ~ 140°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Y1-CU
封装: Y1-CU
库存7,712
VKO55-08IO7
IXYS

RECT BRIDGE 1PH 800V FO-T-A

  • Structure: Bridge, Single Phase - All SCRs
  • Number of SCRs, Diodes: 4 SCRs
  • Voltage - Off State: 800V
  • Current - On State (It (AV)) (Max): 53A
  • Current - On State (It (RMS)) (Max): -
  • Voltage - Gate Trigger (Vgt) (Max): 1.5V
  • Current - Gate Trigger (Igt) (Max): 100mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 600A
  • Current - Hold (Ih) (Max): 200mA
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: FO-T-A
封装: FO-T-A
库存5,088
MMO175-16IO7
IXYS

MODULE AC CONTROL 1600V ECO-PAC1

  • Structure: 1-Phase Controller - All SCRs
  • Number of SCRs, Diodes: 2 SCRs
  • Voltage - Off State: 1600V
  • Current - On State (It (AV)) (Max): 80A
  • Current - On State (It (RMS)) (Max): 125A
  • Voltage - Gate Trigger (Vgt) (Max): 1.5V
  • Current - Gate Trigger (Igt) (Max): 100mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1600A
  • Current - Hold (Ih) (Max): 200mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
封装: Module
库存5,968
DHG30I600PA
IXYS

DIODE GEN PURP 600V 30A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2.37V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: TO-220-2
库存6,544
MDK600-20N1
IXYS

DIODE MODULE 2KV 883A

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2000V
  • Current - Average Rectified (Io) (per Diode): 883A
  • Voltage - Forward (Vf) (Max) @ If: 880mV @ 500A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 18µs
  • Current - Reverse Leakage @ Vr: 50mA @ 2000V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: Module
库存7,872
MDD950-18N1W
IXYS

DIODE MODULE 1.8KV 950A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800V
  • Current - Average Rectified (Io) (per Diode): 950A
  • Voltage - Forward (Vf) (Max) @ If: 880mV @ 500A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 18µs
  • Current - Reverse Leakage @ Vr: 50mA @ 1800V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: Module
库存7,264
IXDN514D1
IXYS

IC GATE DRIVER SGL 14A 6-DFN

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 30 V
  • Logic Voltage - VIL, VIH: 1V, 2.5V
  • Current - Peak Output (Source, Sink): 14A, 14A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 22ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VDFN Exposed Pad
  • Supplier Device Package: 6-DFN (4x5)
封装: 6-VDFN Exposed Pad
库存7,280
IXCP40M45A
IXYS

IC CURRENT REGULATOR TO220AB

  • Function: Current Regulator
  • Sensing Method: -
  • Accuracy: -
  • Voltage - Input: -
  • Current - Output: 40mA
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存6,224
IXBOD1-13R
IXYS

IC DIODE MODULE BOD 1.25A 1300V

  • Voltage - Clamping: 1300V (1.3kV)
  • Technology: Mixed Technology
  • Number of Circuits: 2
  • Number of Circuits: 2
  • Applications: High Voltage
  • Mounting Type: PCB, Through Hole
  • Package / Case: Radial
  • Supplier Device Package: BOD
封装: Radial
库存4,392
MDMA210UB1600P-PC
IXYS

MDMA210UB1600PTED-PC

  • Structure: -
  • Number of SCRs, Diodes: -
  • Voltage - Off State: -
  • Current - On State (It (AV)) (Max): -
  • Current - On State (It (RMS)) (Max): -
  • Voltage - Gate Trigger (Vgt) (Max): -
  • Current - Gate Trigger (Igt) (Max): -
  • Current - Non Rep. Surge 50, 60Hz (Itsm): -
  • Current - Hold (Ih) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
封装: -
Request a Quote
MDMA120U1600VA
IXYS

3-PH. REC. BRIDGE, B6U

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1.6 kV
  • Current - Average Rectified (Io): 120 A
  • Voltage - Forward (Vf) (Max) @ If: 1.42 V @ 120 A
  • Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: V1-A
封装: -
库存6
IXFA8N65X2
IXYS

MOSFET N-CH 650V 8A TO263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Ta)
  • Rds On (Max) @ Id, Vgs: 450mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封装: -
Request a Quote
CLA40E1200NPZ-TUB
IXYS

SCR 1.2KV 63A TO263

  • Voltage - Off State: 1.2 kV
  • Voltage - Gate Trigger (Vgt) (Max): 1.7 V
  • Current - Gate Trigger (Igt) (Max): 35 mA
  • Voltage - On State (Vtm) (Max): 1.3 V
  • Current - On State (It (AV)) (Max): 40 A
  • Current - On State (It (RMS)) (Max): 63 A
  • Current - Hold (Ih) (Max): 70 mA
  • Current - Off State (Max): -
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 520A, 560A
  • SCR Type: Standard Recovery
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263HV
封装: -
库存4,140
IXTA62N15P-TRL
IXYS

MOSFET N-CH 150V 62A TO263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 350W (Tc)
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 31A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封装: -
Request a Quote
IXFA18N65X2
IXYS

MOSFET N-CH 650V 18A TO263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 290W (Tc)
  • Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封装: -
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