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Infineon Technologies |
IGBT 1200V 6.2A 62W TO263-3-2
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 6.2A
- Current - Collector Pulsed (Icm): 9.6A
- Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 2A
- Power - Max: 62W
- Switching Energy: 220µJ
- Input Type: Standard
- Gate Charge: 11nC
- Td (on/off) @ 25°C: 23ns/260ns
- Test Condition: 800V, 2A, 91 Ohm, 15V
- Reverse Recovery Time (trr): 50ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3-2
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封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存3,968 |
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Infineon Technologies |
MOSFET N-CH 100V DIRECTFET-MN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.8V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2210pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
- Rds On (Max) @ Id, Vgs: 13 mOhm @ 10.3A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET? MN
- Package / Case: DirectFET? Isometric MN
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封装: DirectFET? Isometric MN |
库存61,140 |
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Infineon Technologies |
MOSFET N-CH 30V 80A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7020pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存37,308 |
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Infineon Technologies |
MOSFET N-CH 25V 30A I2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1358pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 52W (Tc)
- Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存5,648 |
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Infineon Technologies |
MOSFET N-CH 55V 61A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 91W (Tc)
- Rds On (Max) @ Id, Vgs: 11 mOhm @ 37A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存2,224 |
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Infineon Technologies |
MOSFET N-CH 40V 75A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 330W (Tc)
- Rds On (Max) @ Id, Vgs: 2 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存4,368 |
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Infineon Technologies |
MOSFET N-CH 75V 30A TO252-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 80µA
- Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 136W (Tc)
- Rds On (Max) @ Id, Vgs: 21.5 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存2,096 |
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Infineon Technologies |
MOSFET N-CH 600V TO-252-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 9.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 280µA
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 74W (Tc)
- Rds On (Max) @ Id, Vgs: 460 mOhm @ 3.4A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存3,072 |
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Infineon Technologies |
MOSFET N-CH 150V 23A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
- Rds On (Max) @ Id, Vgs: 90 mOhm @ 14A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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封装: TO-220-3 |
库存5,312 |
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Infineon Technologies |
TRANS PNP 80V 1A SOT223
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
- Power - Max: 2W
- Frequency - Transition: 125MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: PG-SOT223-4
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封装: TO-261-4, TO-261AA |
库存3,152 |
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Infineon Technologies |
TRANS PREBIAS PNP 250MW SC75
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: PG-SC-75
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封装: SC-75, SOT-416 |
库存7,344 |
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Infineon Technologies |
IC PWR HYBRID 600V 20A SIP3
- Type: IGBT
- Configuration: 3 Phase
- Current: 20A
- Voltage: 600V
- Voltage - Isolation: 2000Vrms
- Package / Case: 22-PowerSIP Module, 18 Leads, Formed Leads
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封装: 22-PowerSIP Module, 18 Leads, Formed Leads |
库存17,472 |
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Infineon Technologies |
DIODE ARRAY SCHOTTKY 40V SOT23
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io) (per Diode): 120mA
- Voltage - Forward (Vf) (Max) @ If: 750mV @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 5ns
- Current - Reverse Leakage @ Vr: 2µA @ 30V
- Operating Temperature - Junction: 150°C (Max)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
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封装: TO-236-3, SC-59, SOT-23-3 |
库存2,256 |
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Infineon Technologies |
DIODE ARRAY SCHOTTKY 4V TSLP4
- Diode Configuration: 2 Independent
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 4V
- Current - Average Rectified (Io) (per Diode): 110mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 410mV @ 10mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Operating Temperature - Junction: 150°C (Max)
- Mounting Type: Surface Mount
- Package / Case: 4-XFDFN
- Supplier Device Package: PG-TSLP-4
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封装: 4-XFDFN |
库存2,752 |
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Infineon Technologies |
IC MCU 32BIT 4MB FLASH 416BGA
- Core Processor: TriCore?
- Core Size: 32-Bit
- Speed: 270MHz
- Connectivity: ASC, CAN, EBI/EMI, FlexRay, MLI, MSC, SSC
- Peripherals: DMA, POR, WDT
- Number of I/O: 221
- Program Memory Size: 4MB (4M x 8)
- Program Memory Type: FLASH
- EEPROM Size: 192K x 8
- RAM Size: 288K x 8
- Voltage - Supply (Vcc/Vdd): 1.17 V ~ 3.63 V
- Data Converters: A/D 8x10b, 44x12b
- Oscillator Type: External
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: 416-BGA
- Supplier Device Package: PG-BGA-416
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封装: 416-BGA |
库存3,088 |
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Infineon Technologies |
IC TEMPERATURE SENSOR TO-92MINI
- Resistance in Ohms @ 25°C: 2k
- Resistance Tolerance: ±3%
- Operating Temperature: -50°C ~ 150°C
- Power - Max: -
- Mounting Type: Through Hole
- Package / Case: TO-226-2, TO-92-2 (TO-226AC)
- Supplier Device Package: TO-92MINI
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封装: TO-226-2, TO-92-2 (TO-226AC) |
库存8,874 |
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Infineon Technologies |
IC REG BUCK 40VQFN
- Output Type: -
- Function: -
- Output Configuration: -
- Topology: -
- Number of Outputs: -
- Output Phases: -
- Voltage - Supply (Vcc/Vdd): -
- Frequency - Switching: -
- Duty Cycle (Max): -
- Synchronous Rectifier: -
- Clock Sync: -
- Serial Interfaces: -
- Control Features: -
- Operating Temperature: -
- Package / Case: -
- Supplier Device Package: -
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封装: - |
库存2,768 |
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Infineon Technologies |
IGBT MOD 1200V 50A 285W
- IGBT Type: Trench Field Stop
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Power - Max: 285 W
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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封装: - |
Request a Quote |
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Infineon Technologies |
MULTI-MARKET MCUS
- Core Processor: ARM® Cortex®-M3
- Core Size: 32-Bit
- Speed: 40MHz
- Connectivity: CSIO, EBI/EMI, FIFO, I2C, UART/USART
- Peripherals: DMA, LCD, LVD, POR, PWM, WDT
- Number of I/O: 51
- Program Memory Size: 96KB (96K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 16K x 8
- Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
- Data Converters: A/D 12x12b
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LQFP
- Supplier Device Package: 64-LQFP (10x10)
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封装: - |
Request a Quote |
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Infineon Technologies |
FLEXISLIC SLIC
- Function: -
- Interface: -
- Number of Circuits: -
- Voltage - Supply: -
- Current - Supply: -
- Power (Watts): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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封装: - |
Request a Quote |
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Infineon Technologies |
IC MCU 32BIT 288KB FLASH 120LQFP
- Core Processor: ARM® Cortex®-M4F
- Core Size: 32-Bit
- Speed: 160MHz
- Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
- Peripherals: DMA, LVD, POR, PWM, WDT
- Number of I/O: 100
- Program Memory Size: 288KB (288K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 32K x 8
- Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
- Data Converters: A/D 24x12b; D/A 2x12b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 120-LQFP
- Supplier Device Package: 120-LQFP (16x16)
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封装: - |
Request a Quote |
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Infineon Technologies |
IC FRAM 4MBIT SPI 50MHZ 8GQFN
- Memory Type: Non-Volatile
- Memory Format: FRAM
- Technology: FRAM (Ferroelectric RAM)
- Memory Size: 4Mbit
- Memory Interface: SPI
- Clock Frequency: 50 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 8 ns
- Voltage - Supply: 1.8V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-UQFN
- Supplier Device Package: 8-GQFN (3.23x3.28)
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封装: - |
Request a Quote |
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Infineon Technologies |
IC MCU 32BIT 128KB FLASH 40QFN
- Core Processor: ARM® Cortex®-M0+
- Core Size: 32-Bit
- Speed: 48MHz
- Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
- Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, WDT
- Number of I/O: 34
- Program Memory Size: 128KB (128K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 8K x 8
- Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
- Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 40-UFQFN Exposed Pad
- Supplier Device Package: 40-QFN (6x6)
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封装: - |
库存7,350 |
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Infineon Technologies |
SIC 2N-CH 1200V AG-EASY1BM-2
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 25A
- Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
- Vgs(th) (Max) @ Id: 5.5V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 620nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 800V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-EASY1BM-2
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封装: - |
Request a Quote |
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Infineon Technologies |
MOSFET N-CH 30V 20A PQFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 2.35V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1797 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: PQFN (3x3)
- Package / Case: 8-VQFN Exposed Pad
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封装: - |
Request a Quote |
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Infineon Technologies |
INFINEON
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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封装: - |
Request a Quote |
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Infineon Technologies |
MOSFET N-CH 80V 300A HDSOP-16-2
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 275µA
- Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HDSOP-16-2
- Package / Case: 16-PowerSOP Module
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封装: - |
Request a Quote |
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Infineon Technologies |
SYNC
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, Standard
- Memory Size: 9Mbit
- Memory Interface: Parallel
- Clock Frequency: 100 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 6.5 ns
- Voltage - Supply: 3.135V ~ 3.6V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x20)
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封装: - |
Request a Quote |
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Infineon Technologies |
IC MM MCU 80LQFP
- Core Processor: ARM® Cortex®-M3
- Core Size: 32-Bit
- Speed: 40MHz
- Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
- Peripherals: DMA, LVD, POR, PWM, WDT
- Number of I/O: 66
- Program Memory Size: 256KB (256K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 32K x 8
- Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
- Data Converters: A/D 12x12b SAR
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 80-LQFP
- Supplier Device Package: 80-LQFP (12x12)
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封装: - |
库存3,570 |
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Infineon Technologies |
IC MCU 32BIT 1MB FLASH 124BGA
- Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
- Core Size: 32-Bit Dual-Core
- Speed: 100MHz, 150MHz
- Connectivity: FIFO, I2C, IrDA, Microwire, SmartCard, SPI, SSP, UART/USART, USB
- Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, I2S, LCD, LVD, POR, PWM, WDT
- Number of I/O: 84
- Program Memory Size: 1MB (1M x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 288K x 8
- Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
- Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2, 1x12b
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 124-VFBGA
- Supplier Device Package: 124-VFBGA (9x9)
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封装: - |
库存7,773 |
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