Infineon Technologies 产品

IRG4PH30KPBF

Infineon Technologies

IGBT 1200V 20A 100W TO247AC

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 20A
• Current - Collector Pulsed (Icm): 40A
• Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 10A
• Power - Max: 100W
• Switching Energy: 640µJ (on), 920µJ (off)
• Input Type: Standard
• Gate Charge: 53nC
• Td (on/off) @ 25°C: 28ns/200ns
• Test Condition: 960V, 10A, 23 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

封装: TO-247-3

IPS13N03LA G

Infineon Technologies

MOSFET N-CH 25V 30A IPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 20µA
• Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 1043pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 46W (Tc)
• Rds On (Max) @ Id, Vgs: 12.8 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO251-3
• Package / Case: TO-251-3 Stub Leads, IPak

封装: TO-251-3 Stub Leads, IPak

BSS138WH6433XTMA1

Infineon Technologies

MOSFET N-CH 60V 280MA SOT323

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1.4V @ 26µA
• Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 200mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT323-3
• Package / Case: SC-70, SOT-323

封装: SC-70, SOT-323

IRLU3110ZPBF

Infineon Technologies

MOSFET N-CH 100V 42A IPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 140W (Tc)
• Rds On (Max) @ Id, Vgs: 14 mOhm @ 38A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: IPAK (TO-251)
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

封装: TO-251-3 Short Leads, IPak, TO-251AA

IRFS7430TRLPBF

Infineon Technologies

MOSFET N-CH 40V 409A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.9V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 460nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 14240pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 375W (Tc)
• Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

BSS159NH6327XTSA2

Infineon Technologies

MOSFET N-CH 60V 230MA SOT-23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 26µA
• Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 25V
• Vgs (Max): ±20V
• FET Feature: Depletion Mode
• Power Dissipation (Max): 360mW (Ta)
• Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 160mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

BCR 199F E6327

Infineon Technologies

TRANS PREBIAS PNP 250MW TSFP-3

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 70mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 47k
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Supplier Device Package: PG-TSFP-3

封装: SOT-723

TLE4263G

Infineon Technologies

IC REG LINEAR 5V 200MA DSO-20

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 45V
• Voltage - Output (Min/Fixed): 5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.5V @ 150mA
• Current - Output: 200mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 50µA ~ 23mA
• PSRR: 54dB (100Hz)
• Control Features: Reset, Watchdog
• Protection Features: Over Temperature, Reverse Polarity, Short Circuit
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: PG-DSO-20

封装: 20-SOIC (0.295", 7.50mm Width)

IRS2609DSPBF

Infineon Technologies

IC DVR MOSFET/IGBT N-CH 8-SOIC

• Driven Configuration: Half-Bridge
• Channel Type: Synchronous
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2.2V
• Current - Peak Output (Source, Sink): 200mA, 350mA
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 150ns, 50ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

IR2110-2

Infineon Technologies

IC DRIVER HIGH/LOW SIDE 14-DIP

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 3.3 V ~ 20 V
• Logic Voltage - VIL, VIH: 6V, 9.5V
• Current - Peak Output (Source, Sink): 2A, 2A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 500V
• Rise / Fall Time (Typ): 25ns, 17ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 14-DIP (0.300", 7.62mm), 12 Leads
• Supplier Device Package: 14-PDIP

封装: 14-DIP (0.300", 7.62mm), 12 Leads

IR2106PBF

Infineon Technologies

IC DRIVER HIGH/LOW SIDE 8DIP

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2.9V
• Current - Peak Output (Source, Sink): 200mA, 350mA
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 150ns, 50ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: 8-DIP

封装: 8-DIP (0.300", 7.62mm)

XMC1202T016X0032AAXUMA1

Infineon Technologies

IC MCU 32BIT 32KB FLASH 16TSSOP

• Core Processor: ARM? Cortex?-M0
• Core Size: 32-Bit
• Speed: 32MHz
• Connectivity: I2C, LIN, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
• Number of I/O: 11
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 11x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: -
• Package / Case: 16-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 16-TSSOP

封装: 16-TSSOP (0.173", 4.40mm Width)

XC164CM8F40FAAKXQMA1

Infineon Technologies

IC MCU 16BIT 64KB FLASH 64TQFP

• Core Processor: C166SV2
• Core Size: 16-Bit
• Speed: 40MHz
• Connectivity: CAN, SPI, UART/USART
• Peripherals: PWM, WDT
• Number of I/O: 47
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 6K x 8
• Voltage - Supply (Vcc/Vdd): 2.35 V ~ 2.7 V
• Data Converters: A/D 14x8/10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

IRS20124SPBF

Infineon Technologies

IC DIGITAL AUDIO DRIVER 14-SOIC

• Function: Line Driver
• Applications: Pre-Amplifier
• Number of Channels: 1
• Interface: Analog
• Voltage - Supply: 10 V ~ 18 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Specifications: Class D
• Package / Case: 14-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 14-SOIC

封装: 14-SOIC (0.154", 3.90mm Width)

PVA2352N

Infineon Technologies

IC RELAY PHOTOVO 200V 150MA 8DIP

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 24 Ohm
• Load Current: 150mA
• Voltage - Input: 1.2VDC
• Voltage - Load: 0 ~ 200 V
• Mounting Type: Through Hole
• Termination Style: PC Pin
• Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
• Supplier Device Package: 8-DIP Modified
• Relay Type: Relay

封装: 8-DIP (0.300", 7.62mm), 4 Leads

TLE42754EXUMA2

Infineon Technologies

IC REG LINEAR 5V 450MA 14SSOP

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 450mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

TLS102B0MBHTSA1

Infineon Technologies

IC REG LIN POS ADJ SCT595-5

• Output Configuration: Positive
• Output Type: Adjustable
• Number of Regulators: 1
• Voltage - Input (Max): 40V
• Voltage - Output (Min/Fixed): 2V
• Voltage - Output (Max): 20V
• Voltage Dropout (Max): 0.3V @ 20mA
• Current - Output: 20mA
• Current - Quiescent (Iq): 75µA
• Current - Supply (Max): 1.5mA
• PSRR: 100dB (100Hz)
• Control Features: Enable
• Protection Features: Over Temperature, Reverse Polarity, Short Circuit
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-SMD (5 Leads), Gull Wing
• Supplier Device Package: PG-SCT595-5

封装: 6-SMD (5 Leads), Gull Wing

CY15V116QSN-108BKXI

Infineon Technologies

IC FRAM 16MBIT SPI/QUAD 24FBGA

• Memory Type: Non-Volatile
• Memory Format: FRAM
• Technology: FRAM (Ferroelectric RAM)
• Memory Size: 16Mbit
• Memory Interface: SPI - Quad I/O, QPI
• Clock Frequency: 108 MHz
• Write Cycle Time - Word, Page: -
• Access Time: 6.7 ns
• Voltage - Supply: 1.71V ~ 1.89V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-TBGA
• Supplier Device Package: 24-FBGA (6x8)

封装: -

CY8C68237FM9-BLET

Infineon Technologies

IC MCU ARM CORTEX PSOC 104LFCSP

• Core Processor: -
• Core Size: -
• Speed: -
• Connectivity: -
• Peripherals: -
• Number of I/O: -
• Program Memory Size: -
• Program Memory Type: -
• EEPROM Size: -
• RAM Size: -
• Voltage - Supply (Vcc/Vdd): -
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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IRF7663TR

Infineon Technologies

MOSFET P-CH 20V 8.2A MICRO8

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 1.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 5 V
• Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 10 V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 4.5V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: Micro8™
• Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

封装: -

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CYAT817AZS77-5A202

Infineon Technologies

PSOC BASED - TRUETOUCH

• Touchscreen: 2 Wire Capacitive
• Resolution (Bits): -
• Interface: I2C, SPI
• Voltage Reference: -
• Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
• Current - Supply: -
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 128-LQFP
• Supplier Device Package: 128-TQFP (14x20)

封装: -

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IRFP4668PBFXKMA1

Infineon Technologies

TRENCH >=100V PG-TO247-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200 V
• Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 10720 pF @ 50 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 520W
• Rds On (Max) @ Id, Vgs: 9.7mOhm @ 81A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247AC
• Package / Case: TO-247-3

封装: -

BBY5305WE6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE

• Capacitance @ Vr, F: 3.1pF @ 3V, 1MHz
• Capacitance Ratio: 2.6
• Capacitance Ratio Condition: C1/C3
• Voltage - Peak Reverse (Max): 6 V
• Diode Type: 1 Pair Common Cathode
• Q @ Vr, F: -
• Operating Temperature: -55°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

封装: -

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FF650R17IE4PB60BPSA1

Infineon Technologies

PP IHM I

• IGBT Type: -
• Configuration: Half Bridge Inverter
• Voltage - Collector Emitter Breakdown (Max): 1700 V
• Current - Collector (Ic) (Max): 930 A
• Power - Max: 4.15 kW
• Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A
• Current - Collector Cutoff (Max): 5 mA
• Input Capacitance (Cies) @ Vce: 54000 pF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: -

封装: -

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IPDQ65R080CFD7AXTMA1

Infineon Technologies

AUTOMOTIVE_COOLMOS

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 630µA
• Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 223W (Tc)
• Rds On (Max) @ Id, Vgs: 80mOhm @ 12.5A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-HDSOP-22-1
• Package / Case: 22-PowerBSOP Module

封装: -

IPC60R280P7X7SA1

Infineon Technologies

MOSFET N-CH DIE

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封装: -

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S25FL256SDSBHMA10

Infineon Technologies

IC FLASH 256MBIT SPI/QUAD 24BGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 256Mbit
• Memory Interface: SPI - Quad I/O
• Clock Frequency: 80 MHz
• Write Cycle Time - Word, Page: 750µs
• Access Time: 6.5 ns
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-TBGA
• Supplier Device Package: 24-BGA (8x6)

封装: -

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CY9BF522MPMC-GNE2

Infineon Technologies

IC MCU 32BIT 160KB FLASH 80LQFP

• Core Processor: ARM® Cortex®-M3
• Core Size: 32-Bit
• Speed: 72MHz
• Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART, USB
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number of I/O: 65
• Program Memory Size: 160KB (160K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 26x12b SAR; D/A 2x10b
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 80-LQFP
• Supplier Device Package: 80-LQFP (12x12)

封装: -

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65DN06B02ELEMPRXPSA1

Infineon Technologies

DIODE GP 600V 15130A D-ELEM-1

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 15130A
• Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8000 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 mA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Clamp On
• Package / Case: DO-200AB, B-PUK
• Supplier Device Package: BG-D-ELEM-1
• Operating Temperature - Junction: 180°C (Max)

封装: -

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XMC7531SCQ040XAAXUMA1

Infineon Technologies

XMC1000 PG-VQFN-40

• Applications: Wireless Power Controller
• Core Processor: ARM® Cortex®-M0
• Program Memory Type: FLASH
• Controller Series: XMCxxxxSC
• RAM Size: -
• Interface: PWM, UART
• Number of I/O: -
• Voltage - Supply: 1.8V ~ 5.5V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 40-VFQFN Exposed Pad
• Supplier Device Package: PG-VQFN-40

封装: -

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