|
|
Infineon Technologies |
IGBT 600V 8A 75W TO252-3
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 8A
- Current - Collector Pulsed (Icm): 12A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
- Power - Max: 75W
- Switching Energy: 110µJ
- Input Type: Standard
- Gate Charge: 27nC
- Td (on/off) @ 25°C: 12ns/116ns
- Test Condition: 400V, 4A, 43 Ohm, 15V
- Reverse Recovery Time (trr): 34ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存7,104 |
|
|
|
Infineon Technologies |
MOSFET N-CH 200V 13.5A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 95W (Tc)
- Rds On (Max) @ Id, Vgs: 200 mOhm @ 7A, 5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
|
封装: TO-220-3 |
库存168,000 |
|
|
|
Infineon Technologies |
MOSFET N-CH 40V 18A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 5 mOhm @ 17A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存7,884 |
|
|
|
Infineon Technologies |
MOSFET N-CH 75V 120A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6920pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存4,912 |
|
|
|
Infineon Technologies |
IC REG LIN POS ADJ 300MA SOT23-5
- Output Configuration: Positive
- Output Type: Adjustable
- Number of Regulators: 1
- Voltage - Input (Max): 10V
- Voltage - Output (Min/Fixed): 1.25V
- Voltage - Output (Max): 9.6V
- Voltage Dropout (Max): 0.4V @ 300mA
- Current - Output: 300mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: Enable
- Protection Features: Over Current, Over Temperature
- Operating Temperature: 0°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SOT-23-5
|
封装: SC-74A, SOT-753 |
库存14,340 |
|
|
|
Infineon Technologies |
IC REG LINEAR 3.3V 5A DPAK
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 7V
- Voltage - Output (Min/Fixed): 3.3V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 1.3V @ 5A
- Current - Output: 5A
- Current - Quiescent (Iq): -
- Current - Supply (Max): 10mA
- PSRR: 70dB (120Hz)
- Control Features: -
- Protection Features: Over Current, Over Temperature
- Operating Temperature: 0°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: D-Pak
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存5,888 |
|
|
|
Infineon Technologies |
IC REG LINEAR 5V P-DSO-12-6
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 2
- Voltage - Input (Max): 42V
- Voltage - Output (Min/Fixed): 5V, Tracking
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.6V @ 100mA, 0.6V @ 200mA
- Current - Output: 190mA, 300mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 200µA ~ 20mA
- PSRR: 65dB (100Hz), 65dB (100Hz)
- Control Features: Inhibit, Reset, Watchdog
- Protection Features: Over Current, Over Temperature, Short Circuit
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
- Supplier Device Package: P-DSO-12-6
|
封装: 12-BSOP (0.295", 7.50mm Width) Exposed Pad |
库存13,518 |
|
|
|
Infineon Technologies |
IC MCU 8BIT 32KB FLASH 64TQFP
- Core Processor: XC800
- Core Size: 8-Bit
- Speed: 24MHz
- Connectivity: CAN, SSI, UART/USART
- Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
- Number of I/O: 48
- Program Memory Size: 32KB (32K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 1.75K x 8
- Voltage - Supply (Vcc/Vdd): 3 V ~ 3.6 V
- Data Converters: A/D 8x10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: 64-LQFP
- Supplier Device Package: -
|
封装: 64-LQFP |
库存6,096 |
|
|
|
Infineon Technologies |
MAGNETIC SWITCH UNIPOLAR SC59
- Function: Unipolar Switch
- Technology: Hall Effect
- Polarization: South Pole
- Sensing Range: 13.5mT Trip, 5mT Release
- Test Condition: 25°C
- Voltage - Supply: 2.7 V ~ 18 V
- Current - Supply (Max): 6mA
- Current - Output (Max): 20mA
- Output Type: Open Collector
- Features: Temperature Compensated
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SC-59
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存5,832 |
|
|
|
Infineon Technologies |
MAGNETIC SWITCH UNIPOLAR SOT23-3
- Function: Unipolar Switch
- Technology: Hall Effect
- Polarization: South Pole
- Sensing Range: 5.4mT Trip, 0.9mT Release
- Test Condition: 25°C
- Voltage - Supply: 3 V ~ 32 V
- Current - Supply (Max): 2.5mA
- Current - Output (Max): 25mA
- Output Type: Open Drain
- Features: Temperature Compensated
- Operating Temperature: -40°C ~ 170°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3-15
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存8,712 |
|
|
|
Infineon Technologies |
IC SWITCH HI-SIDE 4-CH DSO-20
- Switch Type: General Purpose
- Number of Outputs: 4
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 5 V ~ 34 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 2.5A
- Rds On (Typ): 85 mOhm
- Input Type: Non-Inverting
- Features: Auto Restart, Status Flag
- Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: 20-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: PG-DSO-20
|
封装: 20-SOIC (0.295", 7.50mm Width) |
库存22,218 |
|
|
|
Infineon Technologies |
MOSFET 2N-CH 50V 3A 8-SOIC
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 3A
- Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 25V
- Power - Max: 2.4W
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
封装: - |
Request a Quote |
|
|
|
Infineon Technologies |
PSOC4 - GENERAL
- Core Processor: ARM® Cortex®-M0+
- Core Size: 32-Bit
- Speed: 48MHz
- Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
- Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
- Number of I/O: 54
- Program Memory Size: 64KB (64K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 8K x 8
- Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
- Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LQFP
- Supplier Device Package: 64-TQFP (10x10)
|
封装: - |
Request a Quote |
|
|
|
Infineon Technologies |
PROFET
- Switch Type: Relay, Solenoid Driver
- Number of Outputs: 2
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: Logic
- Voltage - Load: 3.1V ~ 18V
- Voltage - Supply (Vcc/Vdd): 3.1V ~ 18V
- Current - Output (Max): 2A
- Rds On (Typ): 61mOhm
- Input Type: Non-Inverting
- Features: Load Discharge, Slew Rate Controlled
- Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: PG-TSDSO-14
|
封装: - |
库存10,200 |
|
|
|
Infineon Technologies |
DIODE SIL CARB 650V 12A TO247-3
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 70 µA @ 650 V
- Capacitance @ Vr, F: 363pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-41
- Operating Temperature - Junction: -40°C ~ 175°C
|
封装: - |
Request a Quote |
|
|
|
Infineon Technologies |
IC FRAM 4MBIT SPI/QUAD 8SOIC
- Memory Type: Non-Volatile
- Memory Format: FRAM
- Technology: FRAM (Ferroelectric RAM)
- Memory Size: 4Mbit
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 108 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.8V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.209", 5.30mm Width)
- Supplier Device Package: 8-SOIC
|
封装: - |
Request a Quote |
|
|
|
Infineon Technologies |
MOSFET N-CH 600V 40A HDSOP-10
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4.5V @ 570µA
- Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2102 pF @ 400 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 266W (Tc)
- Rds On (Max) @ Id, Vgs: 75mOhm @ 11.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HDSOP-10-1
- Package / Case: 10-PowerSOP Module
|
封装: - |
Request a Quote |
|
|
|
Infineon Technologies |
IC MCU 32BIT 416PBGA
- Core Processor: -
- Core Size: -
- Speed: -
- Connectivity: -
- Peripherals: -
- Number of I/O: -
- Program Memory Size: -
- Program Memory Type: -
- EEPROM Size: -
- RAM Size: -
- Voltage - Supply (Vcc/Vdd): -
- Data Converters: -
- Oscillator Type: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
封装: - |
Request a Quote |
|
|
|
Infineon Technologies |
FRAM
- Memory Type: Non-Volatile
- Memory Format: FRAM
- Technology: FRAM (Ferroelectric RAM)
- Memory Size: 8Mbit
- Memory Interface: SPI
- Clock Frequency: 20 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 20 ns
- Voltage - Supply: 1.8V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-UFLGA
- Supplier Device Package: 8-UFLGA (3.28x3.23)
|
封装: - |
Request a Quote |
|
|
|
Infineon Technologies |
DIODE GP 1.2KV 75A WAFER
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 75A
- Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 75 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 14 µA @ 1200 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Sawn on foil
- Operating Temperature - Junction: -40°C ~ 175°C
|
封装: - |
Request a Quote |
|
|
|
Infineon Technologies |
IGBT MOD 1200V 600A 20MW
- IGBT Type: Trench Field Stop
- Configuration: Full Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 600 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
- Current - Collector Cutoff (Max): 3 mA
- Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
|
封装: - |
库存24 |
|
|
|
Infineon Technologies |
IC MCU 8BIT FLASH 32LQFP
- Core Processor: F²MC-8FX
- Core Size: 8-Bit
- Speed: 16.25MHz
- Connectivity: I2C, LINbus, SIO, UART/USART
- Peripherals: LVD, LVR, POR, PWM, WDT
- Number of I/O: 28
- Program Memory Size: 36KB (36K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 1K x 8
- Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
- Data Converters: A/D 8x8/10b
- Oscillator Type: External
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 32-LQFP
- Supplier Device Package: 32-LQFP (7x7)
|
封装: - |
库存6,297 |
|
|
|
Infineon Technologies |
IC SWITCH IPS 1CH HI SIDE D2PAK
- Switch Type: -
- Number of Outputs: 1
- Ratio - Input:Output: -
- Output Configuration: High Side
- Output Type: -
- Interface: -
- Voltage - Load: 6V ~ 35V
- Voltage - Supply (Vcc/Vdd): -
- Current - Output (Max): 1.5A
- Rds On (Typ): 80mOhm
- Input Type: Non-Inverting
- Features: -
- Fault Protection: -
- Operating Temperature: -40°C ~ 150°C
- Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
- Supplier Device Package: D2PAK (SMD-220 5-Lead)
|
封装: - |
Request a Quote |
|
|
|
Infineon Technologies |
TRENCH 40<-<100V PG-TO263-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 55µA
- Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 107W (Tc)
- Rds On (Max) @ Id, Vgs: 5.5mOhm @ 60A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
|
封装: - |
库存1,794 |
|
|
|
Infineon Technologies |
IGBT MODULE 1200V 3550A
- IGBT Type: Trench
- Configuration: Single Switch
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 3550 A
- Power - Max: 13500 W
- Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 2400A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
|
封装: - |
Request a Quote |
|
|
|
Infineon Technologies |
N-CHANNEL POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 220µA
- Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Rds On (Max) @ Id, Vgs: 600mOhm @ 3.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
|
封装: - |
Request a Quote |
|
|
|
Infineon Technologies |
CCG3PA
- Protocol: USB
- Function: Controller
- Interface: I2C, SPI, UART
- Standards: USB 3.0
- Voltage - Supply: 2.7V, 3V ~ 5.5V, 24.5V
- Current - Supply: 10mA
- Operating Temperature: -40°C ~ 105°C (TA)
- Package / Case: 24-UFQFN Exposed Pad
- Supplier Device Package: 24-QFN (4x4)
|
封装: - |
库存30,048 |
|
|
|
Infineon Technologies |
PSOC BASED - TRUETOUCH
- Touchscreen: 2 Wire Capacitive
- Resolution (Bits): -
- Interface: I2C, SPI
- Voltage Reference: -
- Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
- Current - Supply: -
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LQFP
- Supplier Device Package: 64-TQFP (10x10)
|
封装: - |
Request a Quote |
|
|
|
Infineon Technologies |
IC WEST BRIDGE ANTIOCH 81-WLCSP
- Protocol: -
- Function: -
- Interface: -
- Standards: -
- Voltage - Supply: -
- Current - Supply: -
- Operating Temperature: -
- Package / Case: 81-UFBGA, WLCSP
- Supplier Device Package: 81-WLCSP (3.8x3.8)
|
封装: - |
Request a Quote |
|
|
|
Infineon Technologies |
IC MCU 32BIT 384KB FLSH 100LQFP
- Core Processor: ARM® Cortex®-M0+
- Core Size: 32-Bit
- Speed: 48MHz
- Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
- Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, WDT
- Number of I/O: 54
- Program Memory Size: 384KB (384K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 32K x 8
- Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
- Data Converters: A/D 16x12b SAR
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
|
封装: - |
Request a Quote |
|