页 10 - Infineon Technologies 产品 | 深圳黑森尔电子
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Infineon Technologies 产品

记录 16,988
页  10/567
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IRG7T50HF12A
Infineon Technologies

MOD IGBT 1200V 50A POWIR 34

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 100A
  • Power - Max: 340W
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 6.7nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: POWIR? 34 Module
  • Supplier Device Package: POWIR? 34
封装: POWIR? 34 Module
库存3,312
IPD80R1K0CEBTMA1
Infineon Technologies

MOSFET N-CH 800V 5.7A TO252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 950 mOhm @ 3.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存3,328
IRLR3303PBF
Infineon Technologies

MOSFET N-CH 30V 35A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 31 mOhm @ 21A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存4,032
IRF7703TR
Infineon Technologies

MOSFET P-CH 40V 6A 8-TSSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 62nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5220pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSSOP
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
封装: 8-TSSOP (0.173", 4.40mm Width)
库存6,016
IPC50R045CPX1SA1
Infineon Technologies

MOSFET N-CH BARE DIE

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
库存3,168
IPD80P03P4L07ATMA1
Infineon Technologies

MOSFET P-CH 30V 80A TO252-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 130µA
  • Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 25V
  • Vgs (Max): +5V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 88W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存7,696
IPW90R340C3
Infineon Technologies

MOSFET N-CH 900V 15A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 208W (Tc)
  • Rds On (Max) @ Id, Vgs: 340 mOhm @ 9.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3
  • Package / Case: TO-247-3
封装: TO-247-3
库存7,952
hot IRFP150NPBF
Infineon Technologies

MOSFET N-CH 100V 42A TO-247AC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 160W (Tc)
  • Rds On (Max) @ Id, Vgs: 36 mOhm @ 23A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AC
  • Package / Case: TO-247-3
封装: TO-247-3
库存33,708
BA89202VH6327XTSA1
Infineon Technologies

DIODE RF SW 35V 100MA SC79

  • Diode Type: Standard - Single
  • Voltage - Peak Reverse (Max): 35V
  • Current - Max: 100mA
  • Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
  • Resistance @ If, F: 500 mOhm @ 10mA, 100MHz
  • Power Dissipation (Max): -
  • Operating Temperature: 150°C (TJ)
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: PG-SC79-2
封装: SC-79, SOD-523
库存5,776
SIDC03D120H6
Infineon Technologies

DIODE GEN PURP 1.2KV 3A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 3A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: Die
库存7,312
hot SDT12S60
Infineon Technologies

DIODE SCHOTTKY 600V 12A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 12A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 400µA @ 600V
  • Capacitance @ Vr, F: 450pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: TO-220-2
库存32,232
BAS7007E6433HTMA1
Infineon Technologies

DIODE ARRAY SCHOTTKY 70V SOT143

  • Diode Configuration: 2 Independent
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 70V
  • Current - Average Rectified (Io) (per Diode): 70mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 100ps
  • Current - Reverse Leakage @ Vr: 100nA @ 50V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: PG-SOT143-4
封装: TO-253-4, TO-253AA
库存3,648
IR3513MTRPBF
Infineon Technologies

IC XPHASE3 CONTROL 32-MLPQ

  • Applications: Processor
  • Current - Supply: 3mA
  • Voltage - Supply: 8 V ~ 16 V
  • Operating Temperature: 0°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 32-VFQFN Exposed Pad
  • Supplier Device Package: 32-MLPQ (5x5)
封装: 32-VFQFN Exposed Pad
库存4,464
BTS3035TFATMA1
Infineon Technologies

IC LOW SIDE PWR SWITCH TO252-3

  • Switch Type: General Purpose
  • Number of Outputs: 1
  • Ratio - Input:Output: 1:1
  • Output Configuration: Low Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 40V (Max)
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 5A
  • Rds On (Typ): 30 mOhm
  • Input Type: Non-Inverting
  • Features: Auto Restart
  • Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3-313
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存5,216
hot IRS2118STRPBF
Infineon Technologies

IC DRIVER SGL CHAN 8-SOIC

  • Driven Configuration: High-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 6V, 9.5V
  • Current - Peak Output (Source, Sink): 290mA, 600mA
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 75ns, 35ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封装: 8-SOIC (0.154", 3.90mm Width)
库存52,680
PEB 24902 H V2.1
Infineon Technologies

IC NETWORK TERM QUAD MQFP64

  • Function: Echo Cancellation
  • Interface: ISDN
  • Number of Circuits: 4
  • Voltage - Supply: 7V
  • Current - Supply: 1mA
  • Power (Watts): 840mW
  • Operating Temperature: 0°C ~ 70°C
  • Mounting Type: Surface Mount
  • Package / Case: 64-QFP
  • Supplier Device Package: P-64-MQFP
封装: 64-QFP
库存6,768
ESD103B102ELSE6327XTSA1
Infineon Technologies

TVS DIODE 15VWM 48VC TSSLP-2-4

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 15V (Max)
  • Voltage - Breakdown (Min): 21V (Typ)
  • Voltage - Clamping (Max) @ Ipp: 48V (Typ)
  • Current - Peak Pulse (10/1000µs): 16A (100ns)
  • Power - Peak Pulse: -
  • Power Line Protection: No
  • Applications: RF Antenna
  • Capacitance @ Frequency: 0.13pF @ 1MHz
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, No Lead
  • Supplier Device Package: TSSLP-2-4
封装: 2-SMD, No Lead
库存6,894
BTS3142DNT
Infineon Technologies

IC PWR SWITCH LOW SIDE DPAK

  • Switch Type: -
  • Number of Outputs: -
  • Ratio - Input:Output: -
  • Output Configuration: -
  • Output Type: -
  • Interface: -
  • Voltage - Load: -
  • Voltage - Supply (Vcc/Vdd): -
  • Current - Output (Max): -
  • Rds On (Typ): -
  • Input Type: -
  • Features: -
  • Fault Protection: -
  • Operating Temperature: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存2,400
CY22801KSXC-027T
Infineon Technologies

IC CLOCK GENERATOR 8SOIC

  • Type: Clock Generator
  • PLL: Yes
  • Input: CMOS, Crystal
  • Output: LVCMOS
  • Number of Circuits: 1
  • Ratio - Input:Output: 1:3
  • Differential - Input:Output: No/No
  • Frequency - Max: 200MHz
  • Divider/Multiplier: Yes/No
  • Voltage - Supply: 3.14V ~ 3.47V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封装: -
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TDA21470AUMA1
Infineon Technologies

IC INTEG PWR STAGES IQFN-39

  • Output Configuration: -
  • Applications: -
  • Interface: -
  • Load Type: -
  • Technology: -
  • Rds On (Typ): -
  • Current - Output / Channel: -
  • Current - Peak Output: -
  • Voltage - Supply: -
  • Voltage - Load: -
  • Operating Temperature: -
  • Features: -
  • Fault Protection: -
  • Mounting Type: Surface Mount
  • Package / Case: 39-PowerVFQFN
  • Supplier Device Package: PG-IQFN-39
封装: -
库存30,000
CY9BF522MBGL-GK9E1
Infineon Technologies

IC MCU 32BIT 160KB FLASH 96FBGA

  • Core Processor: ARM® Cortex®-M3
  • Core Size: 32-Bit Single-Core
  • Speed: 72MHz
  • Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART, USB
  • Peripherals: DMA, LVD, POR, PWM, WDT
  • Number of I/O: 65
  • Program Memory Size: 160KB (160K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 16K x 8
  • Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
  • Data Converters: A/D 26x12b; D/A 2x10b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 96-LFBGA
  • Supplier Device Package: 96-FBGA (6x6)
封装: -
Request a Quote
CY8C4245AXQ-483
Infineon Technologies

IC MCU 32BIT 32KB FLASH 44TQFP

  • Core Processor: ARM® Cortex®-M0
  • Core Size: 32-Bit Single-Core
  • Speed: 48MHz
  • Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
  • Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
  • Number of I/O: 36
  • Program Memory Size: 32KB (32K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 4K x 8
  • Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
  • Data Converters: A/D 8x12b SAR; D/A 1x7b, 1x8b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-LQFP
  • Supplier Device Package: 44-TQFP (10x10)
封装: -
Request a Quote
PXP1600CPQG003XUMA1
Infineon Technologies

IC CONTROLLER

  • Output Type: -
  • Function: -
  • Output Configuration: -
  • Topology: -
  • Number of Outputs: -
  • Output Phases: -
  • Voltage - Supply (Vcc/Vdd): -
  • Frequency - Switching: -
  • Duty Cycle (Max): -
  • Synchronous Rectifier: -
  • Clock Sync: -
  • Serial Interfaces: -
  • Control Features: -
  • Operating Temperature: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
S26HS512TGABHM003
Infineon Technologies

IC FLASH 512MBIT HYPERBUS 24FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 512Mbit
  • Memory Interface: HyperBus
  • Clock Frequency: 200 MHz
  • Write Cycle Time - Word, Page: 1.7ms
  • Access Time: 5.45 ns
  • Voltage - Supply: 1.7V ~ 2V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-VBGA
  • Supplier Device Package: 24-FBGA (6x8)
封装: -
Request a Quote
FZ3600R17HE4HOSA2
Infineon Technologies

IGBT MODULE 1700V 7200A

  • IGBT Type: -
  • Configuration: Single Switch
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 7200 A
  • Power - Max: 21000 W
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 3600A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 295 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: -
库存6
S29AL016J70FFM023
Infineon Technologies

IC FLASH 16MBIT CFI 64FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 16Mbit
  • Memory Interface: CFI
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-FBGA (9x9)
封装: -
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S26HL512TFPBHV013
Infineon Technologies

IC FLASH 512MBIT HYPERBUS 24FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 512Mbit
  • Memory Interface: HyperBus
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: 1.7ms
  • Access Time: 6.5 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-VBGA
  • Supplier Device Package: 24-FBGA (6x8)
封装: -
Request a Quote
BSM15GP120BPSA1
Infineon Technologies

LOW POWER ECONO AG-ECONO2C-211

  • IGBT Type: -
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 35 A
  • Power - Max: 180 W
  • Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 15A
  • Current - Collector Cutoff (Max): 500 µA
  • Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-ECONO2B
封装: -
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AIKB15N65DH5ATMA1
Infineon Technologies

DISCRETE SWITCHES

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 15 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3-2
封装: -
库存6,000
DDB6U180N16RRPB11BPSA1
Infineon Technologies

LOW POWER ECONO AG-ECONO2B-8111

  • IGBT Type: Trench Field Stop
  • Configuration: Single Chopper
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 140 A
  • Power - Max: 515 W
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-ECONO2B
封装: -
库存30