页 4 - Infineon Technologies 产品 - 晶体管 - FET,MOSFET - 阵列 | 深圳黑森尔电子
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Infineon Technologies 产品 - 晶体管 - FET,MOSFET - 阵列

记录 506
页  4/17
图片
零件编号
制造商
描述
封装
库存
数量
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IPG20N06S2L65AAUMA1
Infineon Technologies

MOSFET 2N-CH 55V 20A 8TDSON

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 14µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V
  • Power - Max: 43W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-10
封装: -
Request a Quote
Logic Level Gate
55V
20A (Tc)
65mOhm @ 15A, 10V
2V @ 14µA
12nC @ 10V
410pF @ 25V
43W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
8-PowerVDFN
PG-TDSON-8-10
IRFI4212H-117PXKMA1
Infineon Technologies

MOSFET 2N-CH 100V 11A TO220-5

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Rds On (Max) @ Id, Vgs: 72.5mOhm @ 6.6A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 50V
  • Power - Max: 18W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-5 Full Pack, Formed Leads
  • Supplier Device Package: TO-220-5 Full-Pak
封装: -
库存2,817
-
100V
11A (Tc)
72.5mOhm @ 6.6A, 10V
5V @ 250µA
18nC @ 10V
490pF @ 50V
18W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220-5 Full Pack, Formed Leads
TO-220-5 Full-Pak
FF1MR12KM1HP
Infineon Technologies

MOSFET

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
IRF7331TRPBF-1
Infineon Technologies

MOSFET 2N-CH 20V 7A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 7A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 16V
  • Power - Max: 2W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封装: -
Request a Quote
-
20V
7A (Ta)
30mOhm @ 7A, 4.5V
1.2V @ 250µA
20nC @ 4.5V
1340pF @ 16V
2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
IRFI4019H-117PXKMA1
Infineon Technologies

MOSFET 2N-CH 150V 8.7A TO220-5

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
  • Rds On (Max) @ Id, Vgs: 95mOhm @ 5.2A, 10V
  • Vgs(th) (Max) @ Id: 4.9V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V
  • Power - Max: 18W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-5 Full Pack, Formed Leads
  • Supplier Device Package: TO-220-5 Full-Pak
封装: -
库存2,523
-
150V
8.7A (Tc)
95mOhm @ 5.2A, 10V
4.9V @ 50µA
20nC @ 10V
810pF @ 25V
18W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220-5 Full Pack, Formed Leads
TO-220-5 Full-Pak
FF2MR12KM1HOSA1
Infineon Technologies

SIC 2N-CH 1200V 500A AG-62MM

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 500A (Tc)
  • Rds On (Max) @ Id, Vgs: 2.13mOhm @ 500A, 15V
  • Vgs(th) (Max) @ Id: 5.15V @ 224mA
  • Gate Charge (Qg) (Max) @ Vgs: 1340nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 39700pF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-62MM
封装: -
库存30
-
1200V (1.2kV)
500A (Tc)
2.13mOhm @ 500A, 15V
5.15V @ 224mA
1340nC @ 15V
39700pF @ 800V
-
-40°C ~ 150°C (TJ)
Chassis Mount
Module
AG-62MM
FF6MR12KM1HHPSA1
Infineon Technologies

MOSFET

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存60
-
-
-
-
-
-
-
-
-
-
-
-
FS05MR12A6MA1BBPSA1
Infineon Technologies

SIC 1200V 200A AG-HYBRIDD

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 200A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-HYBRIDD-2
封装: -
库存30
-
1200V (1.2kV)
200A
-
-
-
-
-
-
Chassis Mount
Module
AG-HYBRIDD-2
IRF7342QTRPBF
Infineon Technologies

MOSFET 2P-CH 55V 3.4A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A
  • Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: -
Request a Quote
Logic Level Gate
55V
3.4A
105mOhm @ 3.4A, 10V
1V @ 250µA
38nC @ 10V
690pF @ 25V
2W
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
IQE008N03LM5SCATMA1
Infineon Technologies

TRENCH <= 40V

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: PG-WHSON-8
封装: -
Request a Quote
-
30V
-
-
-
-
-
-
-
Surface Mount
8-PowerWDFN
PG-WHSON-8
IRF7313TRPBFXTMA1
Infineon Technologies

MOSFET 2N-CH 30V 6.5A 8DSO-902

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
  • Power - Max: 2W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8-902
封装: -
库存22,074
-
30V
6.5A (Ta)
29mOhm @ 5.8A, 10V
1V @ 250µA
33nC @ 10V
650pF @ 25V
2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
PG-DSO-8-902
IAUC60N04S6L045HATMA1
Infineon Technologies

MOSFET 2N-CH 40V 60A 8TDSON

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
  • Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 13µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1136pF @ 25V
  • Power - Max: 52W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-57
封装: -
库存88,344
Logic Level Gate
40V
60A (Tj)
4.5mOhm @ 30A, 10V
2V @ 13µA
19nC @ 10V
1136pF @ 25V
52W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PG-TDSON-8-57
IRFHS9351TR2PBF
Infineon Technologies

MOSFET 2P-CH 30V 2.3A PQFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A
  • Rds On (Max) @ Id, Vgs: 170mOhm @ 3.1A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V
  • Power - Max: 1.4W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 6-PowerVDFN
  • Supplier Device Package: 6-PQFN Dual (2x2)
封装: -
Request a Quote
Logic Level Gate
30V
2.3A
170mOhm @ 3.1A, 10V
2.4V @ 10µA
3.7nC @ 10V
160pF @ 25V
1.4W
-
Surface Mount
6-PowerVDFN
6-PQFN Dual (2x2)
FF6MR12KM1HPHPSA1
Infineon Technologies

MOSFET

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存48
-
-
-
-
-
-
-
-
-
-
-
-
F411MR12W2M1B76BOMA1
Infineon Technologies

SIC 4N-CH 1200V AG-EASY1B-2

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
  • Rds On (Max) @ Id, Vgs: 11.3mOhm @ 100A, 15V
  • Vgs(th) (Max) @ Id: 5.55V @ 40mA
  • Gate Charge (Qg) (Max) @ Vgs: 248nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-EASY1B-2
封装: -
Request a Quote
-
1200V (1.2kV)
100A (Tj)
11.3mOhm @ 100A, 15V
5.55V @ 40mA
248nC @ 15V
7360pF @ 800V
-
-40°C ~ 150°C (TJ)
Chassis Mount
Module
AG-EASY1B-2
IPG20N04S408BATMA1
Infineon Technologies

MOSFET 2N-CH 40V 20A 8TDSON

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 30µA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V
  • Power - Max: 65W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-10
封装: -
库存14,994
-
40V
20A (Tc)
7.6mOhm @ 17A, 10V
4V @ 30µA
36nC @ 10V
2940pF @ 25V
65W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
8-PowerVDFN
PG-TDSON-8-10
IAUC60N04S6L030HATMA1
Infineon Technologies

MOSFET 2N-CH 40V 60A 8TDSON

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2128pF @ 25V
  • Power - Max: 75W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-56
封装: -
Request a Quote
Logic Level Gate
40V
60A (Tj)
3mOhm @ 30A, 10V
2V @ 25µA
35nC @ 10V
2128pF @ 25V
75W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PG-TDSON-8-56
BSC072N03LDGATMA1
Infineon Technologies

MOSFET 2N-CH 30V 11.5A 8TDSON

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11.5A
  • Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 15V
  • Power - Max: 57W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-4
封装: -
Request a Quote
Logic Level Gate
30V
11.5A
7.2mOhm @ 20A, 10V
2.2V @ 250µA
41nC @ 10V
3500pF @ 15V
57W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PG-TDSON-8-4
IRF8910TRPBFXTMA1
Infineon Technologies

MOSFET 2N-CH 20V 10A 8DSO-902

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.55V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V
  • Power - Max: 2W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8-902
封装: -
库存12,000
-
20V
10A (Ta)
13.4mOhm @ 10A, 10V
2.55V @ 250µA
11nC @ 4.5V
960pF @ 10V
2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
PG-DSO-8-902
FF45MR12W1M1PB11BPSA1
Infineon Technologies

SIC 2N-CH 1200V AG-EASY1BM

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
  • Vgs(th) (Max) @ Id: 5.55V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-EASY1BM
封装: -
Request a Quote
-
1200V (1.2kV)
25A (Tj)
45mOhm @ 25A, 15V
5.55V @ 10mA
62nC @ 15V
1840pF @ 800V
-
-40°C ~ 150°C (TJ)
Chassis Mount
Module
AG-EASY1BM
94-2518PBF
Infineon Technologies

MOSFET

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
F423MR12W1M1B76BPSA1
Infineon Technologies

SIC 4N-CH 1200V 45A AG-EASY1B

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 45A (Tj)
  • Rds On (Max) @ Id, Vgs: 22.5mOhm @ 50A, 15V
  • Vgs(th) (Max) @ Id: 5.55V @ 20mA
  • Gate Charge (Qg) (Max) @ Vgs: 124nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-EASY1B-2
封装: -
Request a Quote
-
1200V (1.2kV)
45A (Tj)
22.5mOhm @ 50A, 15V
5.55V @ 20mA
124nC @ 15V
3680pF @ 800V
-
-40°C ~ 150°C (TJ)
Chassis Mount
Module
AG-EASY1B-2
IRF7303QTRPBF
Infineon Technologies

MOSFET 2N-CH 30V 4.9A 8-SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.9A
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: -
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-
30V
4.9A
50mOhm @ 2.4A, 10V
1V @ 250µA
25nC @ 10V
520pF @ 25V
2W
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
IRF7313QTRPBF
Infineon Technologies

MOSFET 2N-CH 30V 6.5A 8-SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A
  • Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: -
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-
30V
6.5A
29mOhm @ 5.8A, 10V
1V @ 250µA
33nC @ 10V
650pF @ 25V
2W
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
IRF9956TRPBFXTMA1
Infineon Technologies

MOSFET 2N-CH 30V 3.5A 8DSO-902

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
  • Power - Max: 2W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8-902
封装: -
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-
30V
3.5A (Ta)
100mOhm @ 2.2A, 10V
1V @ 250µA
14nC @ 10V
190pF @ 15V
2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
PG-DSO-8-902
IRFI4020H-117PXKMA1
Infineon Technologies

MOSFET 2N-CH 200V 9.1A TO220-5

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 9.1A (Tc)
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 5.5A, 10V
  • Vgs(th) (Max) @ Id: 4.9V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 25V
  • Power - Max: 21W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-5 Full Pack, Formed Leads
  • Supplier Device Package: TO-220-5 Full-Pak
封装: -
库存1,116
-
200V
9.1A (Tc)
100mOhm @ 5.5A, 10V
4.9V @ 100µA
29nC @ 10V
1240pF @ 25V
21W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220-5 Full Pack, Formed Leads
TO-220-5 Full-Pak
FF3MR12KM1HOSA1
Infineon Technologies

SIC 2N-CH 1200V 375A AG-62MM

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
  • Rds On (Max) @ Id, Vgs: 2.83mOhm @ 375A, 15V
  • Vgs(th) (Max) @ Id: 5.15V @ 168mA
  • Gate Charge (Qg) (Max) @ Vgs: 1000nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 29800pF @ 25V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-62MM
封装: -
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-
1200V (1.2kV)
375A (Tc)
2.83mOhm @ 375A, 15V
5.15V @ 168mA
1000nC @ 15V
29800pF @ 25V
-
-40°C ~ 150°C (TJ)
Chassis Mount
Module
AG-62MM
FF17MR12W1M1HB11BPSA1
Infineon Technologies

SIC 1200V AG-EASY1B

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-EASY1B
封装: -
库存72
-
1200V (1.2kV)
-
-
-
-
-
-
-
Chassis Mount
Module
AG-EASY1B
FS03MR12A6MA1LBBPSA1
Infineon Technologies

SIC 6N-CH 1200V AG-HYBRIDD

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 400A
  • Rds On (Max) @ Id, Vgs: 3.7mOhm @ 400A, 15V
  • Vgs(th) (Max) @ Id: 5.55V @ 240mA
  • Gate Charge (Qg) (Max) @ Vgs: 1320nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 42500pF @ 600V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-HYBRIDD-2
封装: -
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-
1200V (1.2kV)
400A
3.7mOhm @ 400A, 15V
5.55V @ 240mA
1320nC @ 15V
42500pF @ 600V
-
-40°C ~ 150°C (TJ)
Chassis Mount
Module
AG-HYBRIDD-2
IRF7105QTRPBF
Infineon Technologies

MOSFET N/P-CH 25V 8-SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: -
Request a Quote
-
25V
3.5A, 2.3A
100mOhm @ 1A, 10V
3V @ 250µA
27nC @ 10V
330pF @ 15V
2W
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO