页 4 - Fairchild/ON Semiconductor 产品 - 晶体管 - FET,MOSFET - 单 | 深圳黑森尔电子
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Fairchild/ON Semiconductor 产品 - 晶体管 - FET,MOSFET - 单

记录 3,066
页  4/103
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Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot FDMS86500L
Fairchild/ON Semiconductor

MOSFET N CH 60V 25A 8-PQFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 12530pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PQFN (5x6), Power56
  • Package / Case: 8-PowerTDFN
封装: 8-PowerTDFN
库存81,324
MOSFET (Metal Oxide)
60V
25A (Ta), 80A (Tc)
4.5V, 10V
3V @ 250µA
165nC @ 10V
12530pF @ 30V
±20V
-
2.5W (Ta), 104W (Tc)
2.5 mOhm @ 25A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-PQFN (5x6), Power56
8-PowerTDFN
hot FDMS6681Z
Fairchild/ON Semiconductor

MOSFET P-CH 30V 21.1A POWER56

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 21.1A (Ta), 49A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 241nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10380pF @ 15V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 73W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 22.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Power56
  • Package / Case: 8-PowerTDFN
封装: 8-PowerTDFN
库存120,936
MOSFET (Metal Oxide)
30V
21.1A (Ta), 49A (Tc)
4.5V, 10V
3V @ 250µA
241nC @ 10V
10380pF @ 15V
±25V
-
2.5W (Ta), 73W (Tc)
3.2 mOhm @ 22.1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
Power56
8-PowerTDFN
hot FDS2672
Fairchild/ON Semiconductor

MOSFET N-CH 200V 3.9A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2535pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: 8-SOIC (0.154", 3.90mm Width)
库存419,856
MOSFET (Metal Oxide)
200V
3.9A (Ta)
6V, 10V
4V @ 250µA
46nC @ 10V
2535pF @ 100V
±20V
-
2.5W (Ta)
70 mOhm @ 3.9A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot FDS2670
Fairchild/ON Semiconductor

MOSFET N-CH 200V 3A 8-SO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1228pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: 8-SOIC (0.154", 3.90mm Width)
库存169,668
MOSFET (Metal Oxide)
200V
3A (Ta)
10V
4.5V @ 250µA
43nC @ 10V
1228pF @ 100V
±20V
-
2.5W (Ta)
130 mOhm @ 3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot FDMC7660
Fairchild/ON Semiconductor

MOSFET N-CH 30V 20A 8-PQFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4830pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Power33
  • Package / Case: 8-PowerTDFN
封装: 8-PowerTDFN
库存109,128
MOSFET (Metal Oxide)
30V
20A (Ta), 40A (Tc)
4.5V, 10V
2.5V @ 250µA
86nC @ 10V
4830pF @ 15V
±20V
-
2.3W (Ta), 41W (Tc)
2.2 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
Power33
8-PowerTDFN
hot FQB30N06LTM
Fairchild/ON Semiconductor

MOSFET N-CH 60V 32A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.75W (Ta), 79W (Tc)
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存38,400
MOSFET (Metal Oxide)
60V
32A (Tc)
5V, 10V
2.5V @ 250µA
20nC @ 5V
1040pF @ 25V
±20V
-
3.75W (Ta), 79W (Tc)
35 mOhm @ 16A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot FDMS8460
Fairchild/ON Semiconductor

MOSFET N-CH 40V 25A POWER56

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 49A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7205pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Power56
  • Package / Case: 8-PowerTDFN
封装: 8-PowerTDFN
库存169,728
MOSFET (Metal Oxide)
40V
25A (Ta), 49A (Tc)
4.5V, 10V
3V @ 250µA
110nC @ 10V
7205pF @ 20V
±20V
-
2.5W (Ta), 104W (Tc)
2.2 mOhm @ 25A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
Power56
8-PowerTDFN
hot FDS8638
Fairchild/ON Semiconductor

MOSFET N-CH 40V 18A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5680pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: 8-SOIC (0.154", 3.90mm Width)
库存3,792
MOSFET (Metal Oxide)
40V
18A (Ta)
4.5V, 10V
3V @ 250µA
86nC @ 10V
5680pF @ 15V
±20V
-
2.5W (Ta)
4.3 mOhm @ 18A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot FDS5672
Fairchild/ON Semiconductor

MOSFET N-CH 60V 12A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: 8-SOIC (0.154", 3.90mm Width)
库存370,836
MOSFET (Metal Oxide)
60V
12A (Tc)
6V, 10V
4V @ 250µA
45nC @ 10V
2200pF @ 25V
±20V
-
2.5W (Ta)
10 mOhm @ 12A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
FDMS86252
Fairchild/ON Semiconductor

MOSFET N-CH 150V 16A POWER56

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 905pF @ 75V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
  • Rds On (Max) @ Id, Vgs: 51 mOhm @ 4.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Power56
  • Package / Case: 8-PowerTDFN
封装: 8-PowerTDFN
库存26,100
MOSFET (Metal Oxide)
150V
4.6A (Ta), 16A (Tc)
6V, 10V
4V @ 250µA
15nC @ 10V
905pF @ 75V
±20V
-
2.5W (Ta), 69W (Tc)
51 mOhm @ 4.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
Power56
8-PowerTDFN
hot NDT456P
Fairchild/ON Semiconductor

MOSFET P-CH 30V 7.5A SOT-223-4

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta)
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 7.5A, 10V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223-4
  • Package / Case: TO-261-4, TO-261AA
封装: TO-261-4, TO-261AA
库存773,748
MOSFET (Metal Oxide)
30V
7.5A (Ta)
4.5V, 10V
3V @ 250µA
67nC @ 10V
1440pF @ 15V
±20V
-
3W (Ta)
30 mOhm @ 7.5A, 10V
-65°C ~ 150°C (TJ)
Surface Mount
SOT-223-4
TO-261-4, TO-261AA
hot FDS6574A
Fairchild/ON Semiconductor

MOSFET N-CH 20V 16A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 105nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 7657pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 6 mOhm @ 16A, 4.5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: 8-SOIC (0.154", 3.90mm Width)
库存136,068
MOSFET (Metal Oxide)
20V
16A (Ta)
1.8V, 4.5V
1.5V @ 250µA
105nC @ 4.5V
7657pF @ 10V
±8V
-
2.5W (Ta)
6 mOhm @ 16A, 4.5V
-55°C ~ 175°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot FDS2572
Fairchild/ON Semiconductor

MOSFET N-CH 150V 4.9A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 47 mOhm @ 4.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: 8-SOIC (0.154", 3.90mm Width)
库存500,760
MOSFET (Metal Oxide)
150V
4.9A (Tc)
6V, 10V
4V @ 250µA
38nC @ 10V
2050pF @ 25V
±20V
-
2.5W (Ta)
47 mOhm @ 4.9A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot FDMS86101
Fairchild/ON Semiconductor

MOSFET N-CH 100V 12.4A POWER56

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Power56
  • Package / Case: 8-PowerTDFN
封装: 8-PowerTDFN
库存1,179,696
MOSFET (Metal Oxide)
100V
12.4A (Ta), 60A (Tc)
6V, 10V
4V @ 250µA
55nC @ 10V
3000pF @ 50V
±20V
-
2.5W (Ta), 104W (Tc)
8 mOhm @ 13A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
Power56
8-PowerTDFN
hot FDD18N20LZ
Fairchild/ON Semiconductor

MOSFET N-CH 200V DPAK-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1575pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 125 mOhm @ 8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存90,492
MOSFET (Metal Oxide)
200V
16A (Tc)
5V, 10V
2.5V @ 250µA
40nC @ 10V
1575pF @ 25V
±20V
-
89W (Tc)
125 mOhm @ 8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
FDT86102LZ
Fairchild/ON Semiconductor

MOSFET N-CH 100V 6.6A SOT-223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1490pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.2W (Ta)
  • Rds On (Max) @ Id, Vgs: 28 mOhm @ 6.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223-4
  • Package / Case: TO-261-4, TO-261AA
封装: TO-261-4, TO-261AA
库存35,112
MOSFET (Metal Oxide)
100V
6.6A (Ta)
4.5V, 10V
3V @ 250µA
25nC @ 10V
1490pF @ 50V
±20V
-
2.2W (Ta)
28 mOhm @ 6.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223-4
TO-261-4, TO-261AA
hot FDMC86139P
Fairchild/ON Semiconductor

MOSFET P-CH 100V 4.4A 8MLP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1335pF @ 50V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 67 mOhm @ 4.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-MLP (3.3x3.3)
  • Package / Case: 8-PowerWDFN
封装: 8-PowerWDFN
库存16,824
MOSFET (Metal Oxide)
100V
4.4A (Ta), 15A (Tc)
6V, 10V
4V @ 250µA
22nC @ 10V
1335pF @ 50V
±25V
-
2.3W (Ta), 40W (Tc)
67 mOhm @ 4.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-MLP (3.3x3.3)
8-PowerWDFN
FDMC86102LZ
Fairchild/ON Semiconductor

MOSFET N-CH 100V 7A 8MLP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 6.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Power33
  • Package / Case: 8-PowerWDFN
封装: 8-PowerWDFN
库存51,612
MOSFET (Metal Oxide)
100V
7A (Ta), 18A (Tc)
4.5V, 10V
2.2V @ 250µA
22nC @ 10V
1290pF @ 50V
±20V
-
2.3W (Ta), 41W (Tc)
24 mOhm @ 6.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
Power33
8-PowerWDFN
FDS4141_F085
Fairchild/ON Semiconductor

MOSFET P-CH 40V 10.8A 8-SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2005pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 10.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: 8-SOIC (0.154", 3.90mm Width)
库存37,458
MOSFET (Metal Oxide)
40V
10.8A (Ta)
4.5V, 10V
3V @ 250µA
45nC @ 10V
2005pF @ 20V
±20V
-
1.6W (Ta)
13 mOhm @ 10.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot FDS3672
Fairchild/ON Semiconductor

MOSFET N-CH 100V 7.5A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2015pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: 8-SOIC (0.154", 3.90mm Width)
库存459,060
MOSFET (Metal Oxide)
100V
7.5A (Ta)
6V, 10V
4V @ 250µA
37nC @ 10V
2015pF @ 25V
±20V
-
2.5W (Ta)
23 mOhm @ 7.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
FDS8813NZ
Fairchild/ON Semiconductor

MOSFET N-CH 30V 18.5A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4145pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 18.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: 8-SOIC (0.154", 3.90mm Width)
库存1,010,136
MOSFET (Metal Oxide)
30V
18.5A (Ta)
4.5V, 10V
3V @ 250µA
76nC @ 10V
4145pF @ 15V
±20V
-
2.5W (Ta)
4.5 mOhm @ 18.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot FDD5690
Fairchild/ON Semiconductor

MOSFET N-CH 60V 30A D-PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.2W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 27 mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存260,508
MOSFET (Metal Oxide)
60V
30A (Tc)
6V, 10V
4V @ 250µA
32nC @ 10V
1110pF @ 25V
±20V
-
3.2W (Ta), 50W (Tc)
27 mOhm @ 9A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPak (2 Leads + Tab), SC-63
hot FDD13AN06A0
Fairchild/ON Semiconductor

MOSFET N-CH 60V 50A D-PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 115W (Tc)
  • Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存62,748
MOSFET (Metal Oxide)
60V
9.9A (Ta), 50A (Tc)
6V, 10V
4V @ 250µA
29nC @ 10V
1350pF @ 25V
±20V
-
115W (Tc)
13.5 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
hot FDS2582
Fairchild/ON Semiconductor

MOSFET N-CH 150V 4.1A 8SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 66 mOhm @ 4.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: 8-SOIC (0.154", 3.90mm Width)
库存556,344
MOSFET (Metal Oxide)
150V
4.1A (Ta)
6V, 10V
4V @ 250µA
25nC @ 10V
1290pF @ 25V
±20V
-
2.5W (Ta)
66 mOhm @ 4.1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot FDMC510P
Fairchild/ON Semiconductor

MOSFET P-CH 20V 18A 8-MLP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 116nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 7860pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 12A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-MLP (3.3x3.3)
  • Package / Case: 8-PowerWDFN
封装: 8-PowerWDFN
库存1,015,068
MOSFET (Metal Oxide)
20V
12A (Ta), 18A (Tc)
1.5V, 4.5V
1V @ 250µA
116nC @ 4.5V
7860pF @ 10V
±8V
-
2.3W (Ta), 41W (Tc)
8 mOhm @ 12A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
8-MLP (3.3x3.3)
8-PowerWDFN
hot FDM3622
Fairchild/ON Semiconductor

MOSFET N-CH 100V 4.4A 8MLP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1090pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-MLP (3.3x3.3)
  • Package / Case: 8-PowerWDFN
封装: 8-PowerWDFN
库存362,040
MOSFET (Metal Oxide)
100V
4.4A (Ta)
6V, 10V
4V @ 250µA
17nC @ 10V
1090pF @ 25V
±20V
-
2.1W (Ta)
60 mOhm @ 4.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-MLP (3.3x3.3)
8-PowerWDFN
hot FDMA7630
Fairchild/ON Semiconductor

MOSFET N-CH 30V 6-MICROFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta)
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-MicroFET (2x2)
  • Package / Case: 6-VDFN Exposed Pad
封装: 6-VDFN Exposed Pad
库存360,312
MOSFET (Metal Oxide)
30V
11A (Ta)
4.5V, 10V
3V @ 250µA
22nC @ 10V
1360pF @ 15V
±20V
-
2.4W (Ta)
13 mOhm @ 11A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
6-MicroFET (2x2)
6-VDFN Exposed Pad
hot FDS4675
Fairchild/ON Semiconductor

MOSFET P-CH 40V 11A 8SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta)
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: 8-SOIC (0.154", 3.90mm Width)
库存175,080
MOSFET (Metal Oxide)
40V
11A (Ta)
4.5V, 10V
3V @ 250µA
56nC @ 4.5V
4350pF @ 20V
±20V
-
2.4W (Ta)
13 mOhm @ 11A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot FDFS2P106A
Fairchild/ON Semiconductor

MOSFET P-CH 60V 3A 8-SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 714pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 900mW (Ta)
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: 8-SOIC (0.154", 3.90mm Width)
库存20,544
MOSFET (Metal Oxide)
60V
3A (Ta)
4.5V, 10V
3V @ 250µA
21nC @ 10V
714pF @ 30V
±20V
Schottky Diode (Isolated)
900mW (Ta)
110 mOhm @ 3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
hot FDS4141
Fairchild/ON Semiconductor

MOSFET P-CH 40V 10.8A 8-SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2670pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Ta)
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 10.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: 8-SOIC (0.154", 3.90mm Width)
库存421,752
MOSFET (Metal Oxide)
40V
10.8A (Ta)
4.5V, 10V
3V @ 250µA
49nC @ 10V
2670pF @ 20V
±20V
-
5W (Ta)
13 mOhm @ 10.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)