页 11 - Fairchild/ON Semiconductor 产品 - 晶体管 - FET,MOSFET - 单 | 深圳黑森尔电子
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Fairchild/ON Semiconductor 产品 - 晶体管 - FET,MOSFET - 单

记录 3,066
页  11/103
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数量
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot FDP51N25
Fairchild/ON Semiconductor

MOSFET N-CH 250V 51A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3410pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 320W (Tc)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 25.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
封装: TO-220-3
库存401,592
MOSFET (Metal Oxide)
250V
51A (Tc)
10V
5V @ 250µA
70nC @ 10V
3410pF @ 25V
±30V
-
320W (Tc)
60 mOhm @ 25.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot FDB047N10
Fairchild/ON Semiconductor

MOSFET N-CH 100V 120A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 15265pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存68,340
MOSFET (Metal Oxide)
100V
120A (Tc)
10V
4.5V @ 250µA
210nC @ 10V
15265pF @ 25V
±20V
-
375W (Tc)
4.7 mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot FQP4P40
Fairchild/ON Semiconductor

MOSFET P-CH 400V 3.5A TO-220

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 85W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.1 Ohm @ 1.75A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: TO-220-3
库存72,300
MOSFET (Metal Oxide)
400V
3.5A (Tc)
10V
5V @ 250µA
23nC @ 10V
680pF @ 25V
±30V
-
85W (Tc)
3.1 Ohm @ 1.75A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot FQPF65N06
Fairchild/ON Semiconductor

MOSFET N-CH 60V 40A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 56W (Tc)
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
封装: TO-220-3 Full Pack
库存5,984
MOSFET (Metal Oxide)
60V
40A (Tc)
10V
4V @ 250µA
65nC @ 10V
2410pF @ 25V
±25V
-
56W (Tc)
16 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
hot FQA70N10
Fairchild/ON Semiconductor

MOSFET N-CH 100V 70A TO-3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 214W (Tc)
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 35A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PN
  • Package / Case: TO-3P-3, SC-65-3
封装: TO-3P-3, SC-65-3
库存6,288
MOSFET (Metal Oxide)
100V
70A (Tc)
10V
4V @ 250µA
110nC @ 10V
3300pF @ 25V
±25V
-
214W (Tc)
23 mOhm @ 35A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-3PN
TO-3P-3, SC-65-3
FDMT80060DC
Fairchild/ON Semiconductor

MOSFET N-CH 60V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 292A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 238nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 20170pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.1 mOhm @ 43A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-Dual Cool?88
  • Package / Case: 8-PowerVDFN
封装: 8-PowerVDFN
库存28,104
MOSFET (Metal Oxide)
60V
43A (Ta), 292A (Tc)
8V, 10V
4.5V @ 250µA
238nC @ 10V
20170pF @ 30V
±20V
-
3.2W (Ta), 156W (Tc)
1.1 mOhm @ 43A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-Dual Cool?88
8-PowerVDFN
hot FDP52N20
Fairchild/ON Semiconductor

MOSFET N-CH 200V 52A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 357W (Tc)
  • Rds On (Max) @ Id, Vgs: 49 mOhm @ 26A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
封装: TO-220-3
库存191,976
MOSFET (Metal Oxide)
200V
52A (Tc)
10V
5V @ 250µA
63nC @ 10V
2900pF @ 25V
±30V
-
357W (Tc)
49 mOhm @ 26A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot FQP46N15
Fairchild/ON Semiconductor

MOSFET N-CH 150V 45.6A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 45.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 210W (Tc)
  • Rds On (Max) @ Id, Vgs: 42 mOhm @ 22.8A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
封装: TO-220-3
库存470,604
MOSFET (Metal Oxide)
150V
45.6A (Tc)
10V
4V @ 250µA
110nC @ 10V
3250pF @ 25V
±25V
-
210W (Tc)
42 mOhm @ 22.8A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot FDPF18N50
Fairchild/ON Semiconductor

MOSFET N-CH 500V 18A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2860pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 38.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 265 mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
封装: TO-220-3 Full Pack
库存12,300
MOSFET (Metal Oxide)
500V
18A (Tc)
10V
5V @ 250µA
60nC @ 10V
2860pF @ 25V
±30V
-
38.5W (Tc)
265 mOhm @ 9A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
hot FDPF18N50T
Fairchild/ON Semiconductor

MOSFET N-CH 500V 18A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2860pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 38.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 265 mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
封装: TO-220-3 Full Pack
库存45,384
MOSFET (Metal Oxide)
500V
18A (Tc)
10V
5V @ 250µA
60nC @ 10V
2860pF @ 25V
±30V
-
38.5W (Tc)
265 mOhm @ 9A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
hot HUF75645S3ST
Fairchild/ON Semiconductor

MOSFET N-CH 100V 75A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 238nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3790pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 310W (Tc)
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存28,764
MOSFET (Metal Oxide)
100V
75A (Tc)
10V
4V @ 250µA
238nC @ 20V
3790pF @ 25V
±20V
-
310W (Tc)
14 mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot FQPF13N50CF
Fairchild/ON Semiconductor

MOSFET N-CH 500V 13A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2055pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 48W (Tc)
  • Rds On (Max) @ Id, Vgs: 540 mOhm @ 6.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
封装: TO-220-3 Full Pack
库存16,764
MOSFET (Metal Oxide)
500V
13A (Tc)
10V
4V @ 250µA
56nC @ 10V
2055pF @ 25V
±30V
-
48W (Tc)
540 mOhm @ 6.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
hot HUF75545S3ST
Fairchild/ON Semiconductor

MOSFET N-CH 80V 75A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 235nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 270W (Tc)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存41,328
MOSFET (Metal Oxide)
80V
75A (Tc)
10V
4V @ 250µA
235nC @ 20V
3750pF @ 25V
±20V
-
270W (Tc)
10 mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDPF39N20
Fairchild/ON Semiconductor

MOSFET N-CH 200V 39A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2130pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 37W (Tc)
  • Rds On (Max) @ Id, Vgs: 66 mOhm @ 19.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
封装: TO-220-3 Full Pack
库存29,388
MOSFET (Metal Oxide)
200V
39A (Tc)
10V
5V @ 250µA
49nC @ 10V
2130pF @ 25V
±30V
-
37W (Tc)
66 mOhm @ 19.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
FQB34P10TM_F085
Fairchild/ON Semiconductor

MOSFET P-CH 100V 33.5A D2PAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 33.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2910pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 3.75W (Ta), 155W (Tc)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 16.75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存74,358
MOSFET (Metal Oxide)
100V
33.5A (Tc)
10V
4V @ 250µA
110nC @ 10V
2910pF @ 25V
±25V
-
3.75W (Ta), 155W (Tc)
60 mOhm @ 16.75A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot RFP70N06
Fairchild/ON Semiconductor

MOSFET N-CH 60V 70A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 156nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 70A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: TO-220-3
库存992,832
MOSFET (Metal Oxide)
60V
70A (Tc)
10V
4V @ 250µA
156nC @ 20V
2250pF @ 25V
±20V
-
150W (Tc)
14 mOhm @ 70A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot FQP32N20C
Fairchild/ON Semiconductor

MOSFET N-CH 200V 28A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 156W (Tc)
  • Rds On (Max) @ Id, Vgs: 82 mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: TO-220-3
库存45,768
MOSFET (Metal Oxide)
200V
28A (Tc)
10V
4V @ 250µA
110nC @ 10V
2200pF @ 25V
±30V
-
156W (Tc)
82 mOhm @ 14A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot FQPF27P06
Fairchild/ON Semiconductor

MOSFET P-CH 60V 17A TO-220F

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 47W (Tc)
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 8.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
封装: TO-220-3 Full Pack
库存104,100
MOSFET (Metal Oxide)
60V
17A (Tc)
10V
4V @ 250µA
43nC @ 10V
1400pF @ 25V
±25V
-
47W (Tc)
70 mOhm @ 8.5A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
hot FQPF33N10L
Fairchild/ON Semiconductor

MOSFET N-CH 100V 18A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 41W (Tc)
  • Rds On (Max) @ Id, Vgs: 52 mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
封装: TO-220-3 Full Pack
库存96,732
MOSFET (Metal Oxide)
100V
18A (Tc)
5V, 10V
2V @ 250µA
40nC @ 5V
1630pF @ 25V
±20V
-
41W (Tc)
52 mOhm @ 9A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
hot FQPF30N06L
Fairchild/ON Semiconductor

MOSFET N-CH 60V 22.5A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 22.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 38W (Tc)
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 11.3A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
封装: TO-220-3 Full Pack
库存7,812
MOSFET (Metal Oxide)
60V
22.5A (Tc)
5V, 10V
2.5V @ 250µA
20nC @ 5V
1040pF @ 25V
±20V
-
38W (Tc)
35 mOhm @ 11.3A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
hot FCD9N60NTM
Fairchild/ON Semiconductor

MOSFET N-CH 600V 9A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 92.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 385 mOhm @ 4.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存96,240
MOSFET (Metal Oxide)
600V
9A (Tc)
10V
5V @ 250µA
17.8nC @ 10V
1000pF @ 100V
±30V
-
92.6W (Tc)
385 mOhm @ 4.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot FQPF13N06L
Fairchild/ON Semiconductor

MOSFET N-CH 60V 10A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 24W (Tc)
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
封装: TO-220-3 Full Pack
库存13,956
MOSFET (Metal Oxide)
60V
10A (Tc)
5V, 10V
2.5V @ 250µA
6.4nC @ 5V
350pF @ 25V
±20V
-
24W (Tc)
110 mOhm @ 5A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
hot MTP3055VL
Fairchild/ON Semiconductor

MOSFET N-CH 60V 12A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 48W (Tc)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 5V
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
封装: TO-220-3
库存186,036
MOSFET (Metal Oxide)
60V
12A (Tc)
5V
2V @ 250µA
10nC @ 5V
570pF @ 25V
±15V
-
48W (Tc)
180 mOhm @ 6A, 5V
-65°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot FDPF8N50NZU
Fairchild/ON Semiconductor

MOSFET N-CH 500V 6.5A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 735pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
封装: TO-220-3 Full Pack
库存12,600
MOSFET (Metal Oxide)
500V
6.5A (Tc)
10V
5V @ 250µA
18nC @ 10V
735pF @ 25V
±25V
-
40W (Tc)
1.2 Ohm @ 4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
hot HUF76423P3
Fairchild/ON Semiconductor

MOSFET N-CH 60V 35A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 85W (Tc)
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 35A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: TO-220-3
库存54,876
MOSFET (Metal Oxide)
60V
35A (Tc)
4.5V, 10V
3V @ 250µA
34nC @ 10V
1060pF @ 25V
±16V
-
85W (Tc)
30 mOhm @ 35A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
FDMC2514SDC
Fairchild/ON Semiconductor

MOSFET N-CH 25V 40A POWER33

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2705pF @ 13V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 22.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Dual Cool ? 33
  • Package / Case: 8-PowerTDFN
封装: 8-PowerTDFN
库存27,846
MOSFET (Metal Oxide)
25V
24A (Ta), 40A (Tc)
4.5V, 10V
3V @ 1mA
44nC @ 10V
2705pF @ 13V
±20V
-
3W (Ta), 60W (Tc)
3.5 mOhm @ 22.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
Dual Cool ? 33
8-PowerTDFN
FDMS037N08B
Fairchild/ON Semiconductor

MOSFET N-CH 75V 100A 8QFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5915pF @ 37.5V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 830mW (Ta), 104.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PQFN (5x6), Power56
  • Package / Case: 8-PowerTDFN
封装: 8-PowerTDFN
库存26,202
MOSFET (Metal Oxide)
75V
100A (Tc)
10V
4.5V @ 250µA
100nC @ 10V
5915pF @ 37.5V
±20V
-
830mW (Ta), 104.2W (Tc)
3.7 mOhm @ 50A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-PQFN (5x6), Power56
8-PowerTDFN
hot FDMS8025S
Fairchild/ON Semiconductor

MOSFET N-CH 30V POWER56

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 49A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 24A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Power56
  • Package / Case: 8-PowerTDFN
封装: 8-PowerTDFN
库存5,216
MOSFET (Metal Oxide)
30V
24A (Ta), 49A (Tc)
4.5V, 10V
3V @ 1mA
47nC @ 10V
3000pF @ 15V
±20V
-
2.5W (Ta), 50W (Tc)
2.8 mOhm @ 24A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
Power56
8-PowerTDFN
hot FQP8P10
Fairchild/ON Semiconductor

MOSFET P-CH 100V 8A TO-220

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 530 mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
封装: TO-220-3
库存24,000
MOSFET (Metal Oxide)
100V
8A (Tc)
10V
4V @ 250µA
15nC @ 10V
470pF @ 25V
±30V
-
65W (Tc)
530 mOhm @ 4A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot FQP20N06L
Fairchild/ON Semiconductor

MOSFET N-CH 60V 21A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 53W (Tc)
  • Rds On (Max) @ Id, Vgs: 55 mOhm @ 10.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: TO-220-3
库存223,848
MOSFET (Metal Oxide)
60V
21A (Tc)
5V, 10V
2.5V @ 250µA
13nC @ 5V
630pF @ 25V
±20V
-
53W (Tc)
55 mOhm @ 10.5A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3