Vishay Siliconix 产品 - 晶体管 - FET，MOSFET - 单

SI7682DP-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 20A PPAK SO-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1595pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 5W (Ta), 27.5W (Tc)
• Rds On (Max) @ Id, Vgs: 9 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? SO-8
• Package / Case: PowerPAK? SO-8

封装: PowerPAK? SO-8

SI7674DP-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 40A PPAK SO-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5910pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
• Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? SO-8
• Package / Case: PowerPAK? SO-8

封装: PowerPAK? SO-8

SI7674DP-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 40A PPAK SO-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5910pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
• Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? SO-8
• Package / Case: PowerPAK? SO-8

封装: PowerPAK? SO-8

SI7668ADP-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 40A PPAK SO-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1.8V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 8820pF @ 15V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
• Rds On (Max) @ Id, Vgs: 3 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? SO-8
• Package / Case: PowerPAK? SO-8

封装: PowerPAK? SO-8

SI7668ADP-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 40A PPAK SO-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1.8V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 8820pF @ 15V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
• Rds On (Max) @ Id, Vgs: 3 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? SO-8
• Package / Case: PowerPAK? SO-8

封装: PowerPAK? SO-8

SI7664DP-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 40A PPAK SO-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1.8V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7770pF @ 15V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
• Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? SO-8
• Package / Case: PowerPAK? SO-8

封装: PowerPAK? SO-8

SI7664DP-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 40A PPAK SO-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1.8V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7770pF @ 15V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
• Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? SO-8
• Package / Case: PowerPAK? SO-8

封装: PowerPAK? SO-8

SI7601DN-T1-E3

Vishay Siliconix

MOSFET P-CH 20V 16A 1212-8

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.6V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 27nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 10V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
• Rds On (Max) @ Id, Vgs: 19.2 mOhm @ 11A, 4.5V
• Operating Temperature: -50°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? 1212-8
• Package / Case: PowerPAK? 1212-8

封装: PowerPAK? 1212-8

SI7495DP-T1-GE3

Vishay Siliconix

MOSFET P-CH 12V 13A PPAK SO-8

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 12V
• Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 900mV @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 140nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1.8W (Ta)
• Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 21A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? SO-8
• Package / Case: PowerPAK? SO-8

封装: PowerPAK? SO-8

SI7495DP-T1-E3

Vishay Siliconix

MOSFET P-CH 12V 13A PPAK SO-8

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 12V
• Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 900mV @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 140nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1.8W (Ta)
• Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 21A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? SO-8
• Package / Case: PowerPAK? SO-8

封装: PowerPAK? SO-8

SI7491DP-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 11A PPAK SO-8

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 85nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.8W (Ta)
• Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 18A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? SO-8
• Package / Case: PowerPAK? SO-8

封装: PowerPAK? SO-8

SI7476DP-T1-GE3

Vishay Siliconix

MOSFET N-CH 40V 15A PPAK SO-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 177nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.9W (Ta)
• Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? SO-8
• Package / Case: PowerPAK? SO-8

封装: PowerPAK? SO-8

SI7457DP-T1-GE3

Vishay Siliconix

MOSFET P-CH 100V 28A PPAK SO-8

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5230pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 5.2W (Ta), 83.3W (Tc)
• Rds On (Max) @ Id, Vgs: 42 mOhm @ 7.9A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? SO-8
• Package / Case: PowerPAK? SO-8

封装: PowerPAK? SO-8

SI7457DP-T1-E3

Vishay Siliconix

MOSFET P-CH 100V 28A PPAK SO-8

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5230pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 5.2W (Ta), 83.3W (Tc)
• Rds On (Max) @ Id, Vgs: 42 mOhm @ 7.9A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? SO-8
• Package / Case: PowerPAK? SO-8

封装: PowerPAK? SO-8

SI7452DP-T1-GE3

Vishay Siliconix

MOSFET N-CH 60V 11.5A PPAK SO-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.9W (Ta)
• Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 19.3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? SO-8
• Package / Case: PowerPAK? SO-8

封装: PowerPAK? SO-8

SI7452DP-T1-E3

Vishay Siliconix

MOSFET N-CH 60V 11.5A PPAK SO-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.9W (Ta)
• Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 19.3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? SO-8
• Package / Case: PowerPAK? SO-8

封装: PowerPAK? SO-8

SI7448DP-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 13.4A PPAK SO-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1.9W (Ta)
• Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 22A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? SO-8
• Package / Case: PowerPAK? SO-8

封装: PowerPAK? SO-8

SI7447ADP-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 35A PPAK 1212-8

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4650pF @ 15V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 5.4W (Ta), 83.3W (Tc)
• Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 24A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? 1212-8
• Package / Case: PowerPAK? 1212-8

封装: PowerPAK? 1212-8

SI7447ADP-T1-E3

Vishay Siliconix

MOSFET P-CH 30V 35A PPAK 1212-8

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4650pF @ 15V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 5.4W (Ta), 83.3W (Tc)
• Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 24A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? 1212-8
• Package / Case: PowerPAK? 1212-8

封装: PowerPAK? 1212-8

SI7446BDP-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 12A PPAK SO-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 3076pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.9W (Ta)
• Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 19A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? SO-8
• Package / Case: PowerPAK? SO-8

封装: PowerPAK? SO-8

SI7446BDP-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 12A PPAK SO-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 3076pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.9W (Ta)
• Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 19A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? SO-8
• Package / Case: PowerPAK? SO-8

封装: PowerPAK? SO-8

SI7445DP-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 12A PPAK 1212-8

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 140nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1.9W (Ta)
• Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 19A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? 1212-8
• Package / Case: PowerPAK? 1212-8

封装: PowerPAK? 1212-8

SI7445DP-T1-E3

Vishay Siliconix

MOSFET P-CH 20V 12A PPAK 1212-8

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 140nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1.9W (Ta)
• Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 19A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? 1212-8
• Package / Case: PowerPAK? 1212-8

封装: PowerPAK? 1212-8

SI7440DP-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 12A PPAK SO-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.9W (Ta)
• Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 21A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? SO-8
• Package / Case: PowerPAK? SO-8

封装: PowerPAK? SO-8

SI7440DP-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 12A PPAK SO-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.9W (Ta)
• Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 21A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? SO-8
• Package / Case: PowerPAK? SO-8

封装: PowerPAK? SO-8

SI7425DN-T1-GE3

Vishay Siliconix

MOSFET P-CH 12V 8.3A PPAK 1212-8

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 12V
• Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 300µA
• Gate Charge (Qg) (Max) @ Vgs: 39nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1.5W (Ta)
• Rds On (Max) @ Id, Vgs: 16 mOhm @ 12.6A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? 1212-8
• Package / Case: PowerPAK? 1212-8

封装: PowerPAK? 1212-8

SI7425DN-T1-E3

Vishay Siliconix

MOSFET P-CH 12V 8.3A PPAK 1212-8

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 12V
• Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 300µA
• Gate Charge (Qg) (Max) @ Vgs: 39nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1.5W (Ta)
• Rds On (Max) @ Id, Vgs: 16 mOhm @ 12.6A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? 1212-8
• Package / Case: PowerPAK? 1212-8

封装: PowerPAK? 1212-8

SI7413DN-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 8.4A PPAK 1212-8

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 400µA
• Gate Charge (Qg) (Max) @ Vgs: 51nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1.5W (Ta)
• Rds On (Max) @ Id, Vgs: 15 mOhm @ 13.2A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? 1212-8
• Package / Case: PowerPAK? 1212-8

封装: PowerPAK? 1212-8

SI7409ADN-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 7A PPAK 1212-8

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1.5W (Ta)
• Rds On (Max) @ Id, Vgs: 19 mOhm @ 11A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? 1212-8
• Package / Case: PowerPAK? 1212-8

封装: PowerPAK? 1212-8

SI7407DN-T1-GE3

Vishay Siliconix

MOSFET P-CH 12V 9.9A PPAK 1212-8

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 12V
• Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 400µA
• Gate Charge (Qg) (Max) @ Vgs: 59nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1.5W (Ta)
• Rds On (Max) @ Id, Vgs: 12 mOhm @ 15.6A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? 1212-8
• Package / Case: PowerPAK? 1212-8

封装: PowerPAK? 1212-8