页 14 - Toshiba Semiconductor and Storage 产品 - 晶体管 - 双极 (BJT) - 单 | 深圳黑森尔电子
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Toshiba Semiconductor and Storage 产品 - 晶体管 - 双极 (BJT) - 单

记录 441
页  14/15
图片
零件编号
制造商
描述
封装
库存
数量
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
2SD2206(T6CANO,F,M
Toshiba Semiconductor and Storage

TRANS NPN 2A 100V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
  • Power - Max: 900mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
封装: TO-226-3, TO-92-3 Long Body
库存4,368
2A
100V
1.5V @ 1mA, 1A
10µA (ICBO)
2000 @ 1A, 2V
900mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SD2129,LS4ALPSQ(M
Toshiba Semiconductor and Storage

TRANS NPN 3A 100V TO220-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1.5A, 3V
  • Power - Max: 2W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
封装: TO-220-3 Full Pack
库存3,840
3A
100V
2V @ 12mA, 3A
100µA (ICBO)
2000 @ 1.5A, 3V
2W
-
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SD2129,ALPSQ(M
Toshiba Semiconductor and Storage

TRANS NPN 3A 100V TO220-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1.5A, 3V
  • Power - Max: 2W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
封装: TO-220-3 Full Pack
库存4,784
3A
100V
2V @ 12mA, 3A
100µA (ICBO)
2000 @ 1.5A, 3V
2W
-
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SC6139,T2F(M
Toshiba Semiconductor and Storage

TRANS NPN 1.5A 160V SC71

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 160V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
  • Power - Max: 1W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: SC-71
  • Supplier Device Package: MSTM
封装: SC-71
库存2,736
1.5A
160V
500mV @ 50mA, 500mA
100nA (ICBO)
140 @ 100mA, 5V
1W
100MHz
150°C (TJ)
Through Hole
SC-71
MSTM
2SC6042,T2WNLQ(J
Toshiba Semiconductor and Storage

TRANS NPN 1A 375V SC71

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 375V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 800mA
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: SC-71
  • Supplier Device Package: MSTM
封装: SC-71
库存2,192
1A
375V
1V @ 100mA, 800mA
100µA (ICBO)
100 @ 100mA, 5V
1W
-
150°C (TJ)
Through Hole
SC-71
MSTM
2SC6042,T2HOSH1Q(J
Toshiba Semiconductor and Storage

TRANS NPN 1A 375V SC71

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 375V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 800mA
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: SC-71
  • Supplier Device Package: MSTM
封装: SC-71
库存2,688
1A
375V
1V @ 100mA, 800mA
100µA (ICBO)
100 @ 100mA, 5V
1W
-
150°C (TJ)
Through Hole
SC-71
MSTM
2SC6040,T2Q(J
Toshiba Semiconductor and Storage

TRANS NPN 1A 800V SC71

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 800V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 800mA
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 5V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: SC-71
  • Supplier Device Package: MSTM
封装: SC-71
库存4,784
1A
800V
1V @ 100mA, 800mA
100µA (ICBO)
60 @ 100mA, 5V
1W
-
150°C (TJ)
Through Hole
SC-71
MSTM
2SC6040(TPF2,Q,M)
Toshiba Semiconductor and Storage

TRANS NPN 1A 800V SC71

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 800V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 800mA
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 5V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: SC-71
  • Supplier Device Package: MSTM
封装: SC-71
库存4,368
1A
800V
1V @ 100mA, 800mA
100µA (ICBO)
60 @ 100mA, 5V
1W
-
150°C (TJ)
Through Hole
SC-71
MSTM
2SC6010(T2MITUM,FM
Toshiba Semiconductor and Storage

TRANS NPN 1A 600V SC71

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 75mA, 600mA
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: SC-71
  • Supplier Device Package: MSTM
封装: SC-71
库存6,576
1A
600V
1V @ 75mA, 600mA
100µA (ICBO)
100 @ 100mA, 5V
1W
-
150°C (TJ)
Through Hole
SC-71
MSTM
2SC5930(TPF2,F,M)
Toshiba Semiconductor and Storage

TRANS NPN 1A 600V SC71

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 75mA, 600mA
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 5V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: SC-71
  • Supplier Device Package: MSTM
封装: SC-71
库存3,296
1A
600V
1V @ 75mA, 600mA
100µA (ICBO)
40 @ 200mA, 5V
1W
-
150°C (TJ)
Through Hole
SC-71
MSTM
2SC5930(T2MITUM,FM
Toshiba Semiconductor and Storage

TRANS NPN 1A 600V SC71

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 75mA, 600mA
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 5V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: SC-71
  • Supplier Device Package: MSTM
封装: SC-71
库存3,200
1A
600V
1V @ 75mA, 600mA
100µA (ICBO)
40 @ 200mA, 5V
1W
-
150°C (TJ)
Through Hole
SC-71
MSTM
2SC5549,T6F(J
Toshiba Semiconductor and Storage

TRANS NPN 1A 400V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 25mA, 200mA
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 40mA, 5V
  • Power - Max: 900mW
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
封装: TO-226-3, TO-92-3 Long Body
库存2,432
1A
400V
1V @ 25mA, 200mA
100µA (ICBO)
20 @ 40mA, 5V
900mW
-
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC5459(TOJS,Q,M)
Toshiba Semiconductor and Storage

TRANS NPN 3A 400V TO220-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 150mA, 1.2A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 300mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
封装: TO-220-3 Full Pack
库存2,736
3A
400V
1V @ 150mA, 1.2A
100µA (ICBO)
20 @ 300mA, 5V
2W
-
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SC5201,T6MURAF(J
Toshiba Semiconductor and Storage

TRANS NPN 50MA 600V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 20mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 5V
  • Power - Max: 900mW
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
封装: TO-226-3, TO-92-3 Long Body
库存3,888
50mA
600V
1V @ 500mA, 20mA
1µA (ICBO)
100 @ 20mA, 5V
900mW
-
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC5201,T6F(J
Toshiba Semiconductor and Storage

TRANS NPN 50MA 600V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 20mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 5V
  • Power - Max: 900mW
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
封装: TO-226-3, TO-92-3 Long Body
库存2,560
50mA
600V
1V @ 500mA, 20mA
1µA (ICBO)
100 @ 20mA, 5V
900mW
-
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC5201,F(J
Toshiba Semiconductor and Storage

TRANS NPN 50MA 600V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 20mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 5V
  • Power - Max: 900mW
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
封装: TO-226-3, TO-92-3 Long Body
库存7,440
50mA
600V
1V @ 500mA, 20mA
1µA (ICBO)
100 @ 20mA, 5V
900mW
-
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC5201(TE6,F,M)
Toshiba Semiconductor and Storage

TRANS NPN 50MA 600V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 20mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 5V
  • Power - Max: 900mW
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
封装: TO-226-3, TO-92-3 Long Body
库存6,992
50mA
600V
1V @ 500mA, 20mA
1µA (ICBO)
100 @ 20mA, 5V
900mW
-
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC5201(T6MURATAFM
Toshiba Semiconductor and Storage

TRANS NPN 50MA 600V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 20mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 5V
  • Power - Max: 900mW
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
封装: TO-226-3, TO-92-3 Long Body
库存3,728
50mA
600V
1V @ 500mA, 20mA
1µA (ICBO)
100 @ 20mA, 5V
900mW
-
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC5172(YAZK,Q,M)
Toshiba Semiconductor and Storage

TRANS NPN 5A 400V TO220-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 250mA, 2A
  • Current - Collector Cutoff (Max): 20µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
封装: TO-220-3 Full Pack
库存2,304
5A
400V
1V @ 250mA, 2A
20µA (ICBO)
20 @ 500mA, 5V
2W
-
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SC5171,Q(J
Toshiba Semiconductor and Storage

TRANS NPN 2A 180V TO220-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 180V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
  • Current - Collector Cutoff (Max): 5µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
封装: TO-220-3 Full Pack
库存2,464
2A
180V
1V @ 100mA, 1A
5µA (ICBO)
100 @ 100mA, 5V
2W
200MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SC5171,ONKQ(J
Toshiba Semiconductor and Storage

TRANS NPN 2A 180V TO220-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 180V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
  • Current - Collector Cutoff (Max): 5µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
封装: TO-220-3 Full Pack
库存2,112
2A
180V
1V @ 100mA, 1A
5µA (ICBO)
100 @ 100mA, 5V
2W
200MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SC5171,MATUDQ(J
Toshiba Semiconductor and Storage

TRANS NPN 2A 180V TO220-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 180V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
  • Current - Collector Cutoff (Max): 5µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
封装: TO-220-3 Full Pack
库存5,584
2A
180V
1V @ 100mA, 1A
5µA (ICBO)
100 @ 100mA, 5V
2W
200MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SC5171(ONK,Q,M)
Toshiba Semiconductor and Storage

TRANS NPN 2A 180V TO220-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 180V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
  • Current - Collector Cutoff (Max): 5µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
封装: TO-220-3 Full Pack
库存6,992
2A
180V
1V @ 100mA, 1A
5µA (ICBO)
100 @ 100mA, 5V
2W
200MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SC5171(LBS2MATQ,M
Toshiba Semiconductor and Storage

TRANS NPN 2A 180V TO220-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 180V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
  • Current - Collector Cutoff (Max): 5µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
封装: TO-220-3 Full Pack
库存2,736
2A
180V
1V @ 100mA, 1A
5µA (ICBO)
100 @ 100mA, 5V
2W
200MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SC4935-Y,Q(J
Toshiba Semiconductor and Storage

TRANS NPN 3A 50V TO220-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
  • Power - Max: 2W
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
封装: TO-220-3 Full Pack
库存5,184
3A
50V
600mV @ 200mA, 2A
1µA (ICBO)
70 @ 500mA, 2V
2W
80MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SC4881,LS1SUMIF(M
Toshiba Semiconductor and Storage

TRANS NPN 5A 50V TO220-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 125mA, 2.5A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
  • Power - Max: 2W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
封装: TO-220-3 Full Pack
库存5,600
5A
50V
400mV @ 125mA, 2.5A
1µA (ICBO)
100 @ 1A, 1V
2W
100MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SC4881(CANO,F,M)
Toshiba Semiconductor and Storage

TRANS NPN 5A 50V TO220-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 125mA, 2.5A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
  • Power - Max: 2W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
封装: TO-220-3 Full Pack
库存5,248
5A
50V
400mV @ 125mA, 2.5A
1µA (ICBO)
100 @ 1A, 1V
2W
100MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SC4793,YHF(M
Toshiba Semiconductor and Storage

TRANS NPN 1A 230V TO220-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
封装: TO-220-3 Full Pack
库存2,992
1A
230V
1.5V @ 50mA, 500mA
1µA (ICBO)
100 @ 100mA, 5V
2W
100MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SC4793,YHF(J
Toshiba Semiconductor and Storage

TRANS NPN 1A 230V TO220-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
封装: TO-220-3 Full Pack
库存4,128
1A
230V
1.5V @ 50mA, 500mA
1µA (ICBO)
100 @ 100mA, 5V
2W
100MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SC4793,WNLF(J
Toshiba Semiconductor and Storage

TRANS NPN 1A 230V TO220-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
封装: TO-220-3 Full Pack
库存2,448
1A
230V
1.5V @ 50mA, 500mA
1µA (ICBO)
100 @ 100mA, 5V
2W
100MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS