页 7 - Toshiba Semiconductor and Storage 产品 - 二极管 - 整流器 - 单 | 深圳黑森尔电子
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Toshiba Semiconductor and Storage 产品 - 二极管 - 整流器 - 单

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图片
零件编号
制造商
描述
封装
库存
数量
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
CUS15S40,H3F
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 1.5A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 40V
  • Capacitance @ Vr, F: 170pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: USC
  • Operating Temperature - Junction: 125°C (Max)
封装: SC-76, SOD-323
库存3,200
40V
1.5A
450mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 40V
170pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
USC
125°C (Max)
1SS352,H3F
Toshiba Semiconductor and Storage

DIODE GEN PURP 80V 100MA SC76-2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 500nA @ 80V
  • Capacitance @ Vr, F: 3pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76A
  • Supplier Device Package: SC-76-2
  • Operating Temperature - Junction: 125°C (Max)
封装: SC-76A
库存5,760
80V
100mA
1.2V @ 100mA
Small Signal =< 200mA (Io), Any Speed
4ns
500nA @ 80V
3pF @ 0V, 1MHz
Surface Mount
SC-76A
SC-76-2
125°C (Max)
CRS03(TE85L,Q,M)
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1A SFLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 30V
  • Capacitance @ Vr, F: 40pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: S-FLAT (1.6x3.5)
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: SOD-123F
库存6,528
30V
1A
450mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 30V
40pF @ 10V, 1MHz
Surface Mount
SOD-123F
S-FLAT (1.6x3.5)
-40°C ~ 150°C
TRS12E65C,S1Q
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 650V 12A TO220-2L

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 12A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 90µA @ 170V
  • Capacitance @ Vr, F: 65pF @ 650V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2L
  • Operating Temperature - Junction: 175°C (Max)
封装: TO-220-2
库存5,328
650V
12A (DC)
1.7V @ 12A
No Recovery Time > 500mA (Io)
0ns
90µA @ 170V
65pF @ 650V, 1MHz
Through Hole
TO-220-2
TO-220-2L
175°C (Max)
CRS11(TE85L,Q,M)
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1A SFLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 360mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.5mA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: S-FLAT (1.6x3.5)
  • Operating Temperature - Junction: -40°C ~ 125°C
封装: SOD-123F
库存4,480
30V
1A
360mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1.5mA @ 30V
-
Surface Mount
SOD-123F
S-FLAT (1.6x3.5)
-40°C ~ 125°C
hot 1SS250(TE85L,F)
Toshiba Semiconductor and Storage

DIODE GEN PURP 200V 100MA SC59

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 60ns
  • Current - Reverse Leakage @ Vr: 1µA @ 200V
  • Capacitance @ Vr, F: 3pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SC-59
  • Operating Temperature - Junction: 125°C (Max)
封装: TO-236-3, SC-59, SOT-23-3
库存35,760
200V
100mA
1.2V @ 100mA
Small Signal =< 200mA (Io), Any Speed
60ns
1µA @ 200V
3pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SC-59
125°C (Max)
1SS370TE85LF
Toshiba Semiconductor and Storage

DIODE GEN PURP 200V 100MA SC70

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 60ns
  • Current - Reverse Leakage @ Vr: 1µA @ 200V
  • Capacitance @ Vr, F: 3pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70
  • Operating Temperature - Junction: 125°C (Max)
封装: SC-70, SOT-323
库存4,000
200V
100mA
1.2V @ 100mA
Small Signal =< 200mA (Io), Any Speed
60ns
1µA @ 200V
3pF @ 0V, 1MHz
Surface Mount
SC-70, SOT-323
SC-70
125°C (Max)
CUS551V30,H3F
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 500MA USC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 470mV @ 500mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: USC
  • Operating Temperature - Junction: 125°C (Max)
封装: SC-76, SOD-323
库存4,528
30V
500mA
470mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 20V
-
Surface Mount
SC-76, SOD-323
USC
125°C (Max)
CUS10S40,H3F
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 1A USC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 400mV @ 500mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150µA @ 40V
  • Capacitance @ Vr, F: 120pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: USC
  • Operating Temperature - Junction: 125°C (Max)
封装: SC-76, SOD-323
库存6,736
40V
1A
400mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
-
150µA @ 40V
120pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
USC
125°C (Max)
1SS403,H3F
Toshiba Semiconductor and Storage

DIODE GEN PURP 200V 100MA USC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 60ns
  • Current - Reverse Leakage @ Vr: 1µA @ 200V
  • Capacitance @ Vr, F: 3pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: USC
  • Operating Temperature - Junction: 125°C (Max)
封装: SC-76, SOD-323
库存3,072
200V
100mA
1.2V @ 100mA
Small Signal =< 200mA (Io), Any Speed
60ns
1µA @ 200V
3pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
USC
125°C (Max)
hot 1SS190TE85LF
Toshiba Semiconductor and Storage

DIODE GEN PURP 80V 100MA SC59-3

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 500nA @ 80V
  • Capacitance @ Vr, F: 4pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SC-59-3
  • Operating Temperature - Junction: 125°C (Max)
封装: TO-236-3, SC-59, SOT-23-3
库存30,000
80V
100mA
1.2V @ 100mA
Small Signal =< 200mA (Io), Any Speed
4ns
500nA @ 80V
4pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SC-59-3
125°C (Max)
TRS10E65C,S1Q
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 650V 10A TO220-2L

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 10A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 90µA @ 650V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2L
  • Operating Temperature - Junction: 175°C (Max)
封装: TO-220-2
库存7,008
650V
10A (DC)
1.7V @ 10A
No Recovery Time > 500mA (Io)
0ns
90µA @ 650V
-
Through Hole
TO-220-2
TO-220-2L
175°C (Max)
CMH08A(TE12L,Q,M)
Toshiba Semiconductor and Storage

DIODE GEN PURP 400V 2A MFLAT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: M-FLAT (2.4x3.8)
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: SOD-128
库存2,512
400V
2A
1.8V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 400V
-
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
-40°C ~ 150°C
hot CMH05A(TE12L,Q,M)
Toshiba Semiconductor and Storage

DIODE GEN PURP 400V 1A MFLAT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: M-FLAT (2.4x3.8)
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: SOD-128
库存288,000
400V
1A
1.8V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 400V
-
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
-40°C ~ 150°C
CRS08(TE85L,Q,M)
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1.5A SFLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 360mV @ 1.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 30V
  • Capacitance @ Vr, F: 90pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: S-FLAT (1.6x3.5)
  • Operating Temperature - Junction: -40°C ~ 125°C
封装: SOD-123F
库存7,216
30V
1.5A
360mV @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 30V
90pF @ 10V, 1MHz
Surface Mount
SOD-123F
S-FLAT (1.6x3.5)
-40°C ~ 125°C
DSF01S30SC(TPL3)
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 100MA SC2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50µA @ 30V
  • Capacitance @ Vr, F: 9.3pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, No Lead
  • Supplier Device Package: SC2
  • Operating Temperature - Junction: 125°C (Max)
封装: 2-SMD, No Lead
库存6,016
30V
100mA
500mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
-
50µA @ 30V
9.3pF @ 0V, 1MHz
Surface Mount
2-SMD, No Lead
SC2
125°C (Max)
1SS397TE85LF
Toshiba Semiconductor and Storage

DIODE GEN PURP 400V 100MA SC70

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 500ns
  • Current - Reverse Leakage @ Vr: 1µA @ 400V
  • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70
  • Operating Temperature - Junction: 125°C (Max)
封装: SC-70, SOT-323
库存4,080
400V
100mA
1.3V @ 100mA
Small Signal =< 200mA (Io), Any Speed
500ns
1µA @ 400V
5pF @ 0V, 1MHz
Surface Mount
SC-70, SOT-323
SC-70
125°C (Max)
CCS15S30,L3F
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 20V 1.5A CST2C

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 400mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 30V
  • Capacitance @ Vr, F: 200pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, No Lead
  • Supplier Device Package: CST2C
  • Operating Temperature - Junction: 125°C (Max)
封装: 2-SMD, No Lead
库存6,880
20V
1.5A
400mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
200pF @ 0V, 1MHz
Surface Mount
2-SMD, No Lead
CST2C
125°C (Max)
hot CMF04(TE12L,Q)
Toshiba Semiconductor and Storage

DIODE GEN PURP 800V 500MA MFLAT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 2.5V @ 500mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100ns
  • Current - Reverse Leakage @ Vr: 50µA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: M-FLAT (2.4x3.8)
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: SOD-128
库存309,900
800V
500mA
2.5V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
100ns
50µA @ 800V
-
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
-40°C ~ 150°C
CMF05(TE12L,Q,M)
Toshiba Semiconductor and Storage

DIODE GEN PURP 1KV 500MA MFLAT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 2.7V @ 500mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100ns
  • Current - Reverse Leakage @ Vr: 50µA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: M-FLAT (2.4x3.8)
  • Operating Temperature - Junction: -40°C ~ 125°C
封装: SOD-128
库存3,152
1000V
500mA
2.7V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
100ns
50µA @ 800V
-
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
-40°C ~ 125°C
hot 1SS307(TE85L,F)
Toshiba Semiconductor and Storage

DIODE GEN PURP 30V 100MA SMINI

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 30V
  • Capacitance @ Vr, F: 6pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
  • Operating Temperature - Junction: 125°C (Max)
封装: TO-236-3, SC-59, SOT-23-3
库存85,548
30V
100mA
1.3V @ 100mA
Small Signal =< 200mA (Io), Any Speed
-
10µA @ 30V
6pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
125°C (Max)
CCS15S30,L3IDTF
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 20V 1.5A CST2C

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 400mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 30V
  • Capacitance @ Vr, F: 200pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, No Lead
  • Supplier Device Package: CST2C
  • Operating Temperature - Junction: 125°C (Max)
封装: 2-SMD, No Lead
库存4,384
20V
1.5A
400mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
200pF @ 0V, 1MHz
Surface Mount
2-SMD, No Lead
CST2C
125°C (Max)
CES520,L3F
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 200MA ESC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 30V
  • Capacitance @ Vr, F: 17pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: ESC
  • Operating Temperature - Junction: 125°C (Max)
封装: SC-79, SOD-523
库存5,072
30V
200mA
600mV @ 200mA
Small Signal =< 200mA (Io), Any Speed
-
5µA @ 30V
17pF @ 0V, 1MHz
Surface Mount
SC-79, SOD-523
ESC
125°C (Max)
DSF01S30SL,L3F
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 100MA SL2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50µA @ 30V
  • Capacitance @ Vr, F: 9.02pF @ 2V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 0201 (0603 Metric)
  • Supplier Device Package: SL2
  • Operating Temperature - Junction: 125°C (Max)
封装: 0201 (0603 Metric)
库存6,432
30V
100mA
500mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
-
50µA @ 30V
9.02pF @ 2V, 1MHz
Surface Mount
0201 (0603 Metric)
SL2
125°C (Max)
CTS05S40,L3F
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 500MA CST2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 350mV @ 100mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30µA @ 10V
  • Capacitance @ Vr, F: 42pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-882
  • Supplier Device Package: CST2
  • Operating Temperature - Junction: 125°C (Max)
封装: SOD-882
库存5,328
40V
500mA
350mV @ 100mA
Fast Recovery =< 500ns, > 200mA (Io)
-
30µA @ 10V
42pF @ 0V, 1MHz
Surface Mount
SOD-882
CST2
125°C (Max)
CTS05S30,L3F
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 500MA CST2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 340mV @ 100mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150µA @ 10V
  • Capacitance @ Vr, F: 55pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-882
  • Supplier Device Package: CST2
  • Operating Temperature - Junction: 125°C (Max)
封装: SOD-882
库存5,504
30V
500mA
340mV @ 100mA
Fast Recovery =< 500ns, > 200mA (Io)
-
150µA @ 10V
55pF @ 0V, 1MHz
Surface Mount
SOD-882
CST2
125°C (Max)
1SS417CT,L3F
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 100MA FSC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 620mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 40V
  • Capacitance @ Vr, F: 15pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, Flat Lead
  • Supplier Device Package: fSC
  • Operating Temperature - Junction: 125°C (Max)
封装: 2-SMD, Flat Lead
库存3,536
40V
100mA
620mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
-
5µA @ 40V
15pF @ 0V, 1MHz
Surface Mount
2-SMD, Flat Lead
fSC
125°C (Max)
1SS424(TPL3,F)
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 20V 200MA SSM

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50µA @ 20V
  • Capacitance @ Vr, F: 20pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
  • Operating Temperature - Junction: 125°C (Max)
封装: SC-75, SOT-416
库存2,528
20V
200mA
500mV @ 200mA
Small Signal =< 200mA (Io), Any Speed
-
50µA @ 20V
20pF @ 0V, 1MHz
Surface Mount
SC-75, SOT-416
SSM
125°C (Max)
1SS389,L3F
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 10V 100MA ESC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 10V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20µA @ 10V
  • Capacitance @ Vr, F: 40pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: ESC
  • Operating Temperature - Junction: 125°C (Max)
封装: SC-79, SOD-523
库存5,376
10V
100mA
500mV @ 100mA
Fast Recovery =< 500ns, > 200mA (Io)
-
20µA @ 10V
40pF @ 0V, 1MHz
Surface Mount
SC-79, SOD-523
ESC
125°C (Max)
CUS520,H3F
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 200MA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 280mV @ 10mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 30V
  • Capacitance @ Vr, F: 17pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: USC
  • Operating Temperature - Junction: 125°C (Max)
封装: SC-76, SOD-323
库存2,432
30V
200mA
280mV @ 10mA
Fast Recovery =< 500ns, > 200mA (Io)
-
5µA @ 30V
17pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
USC
125°C (Max)