Taiwan Semiconductor Corporation 产品

2M120ZHR0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 120V, 2000MW, %, A

• Voltage - Zener (Nom) (Vz): 120V
• Tolerance: ±5%
• Power - Max: 2W
• Impedance (Max) (Zzt): 325 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 91.2V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)

封装: DO-204AC, DO-15, Axial

BZD27C180PHRTG

Taiwan Semiconductor Corporation

DIODE, ZENER, 180V, 1000MW, %, A

• Voltage - Zener (Nom) (Vz): 179.5V
• Tolerance: ±6.4%
• Power - Max: 1W
• Impedance (Max) (Zzt): 450 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 130V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

封装: DO-219AB

MTZJ13SA R0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 12.43V, 500MW, %,

• Voltage - Zener (Nom) (Vz): 12.43V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 35 Ohms
• Current - Reverse Leakage @ Vr: 200nA @ 10V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AG, DO-34, Axial
• Supplier Device Package: DO-34

封装: DO-204AG, DO-34, Axial

BZX55B4V7 A0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 4.7V, 500MW, 2%, D

• Voltage - Zener (Nom) (Vz): 4.7V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 60 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

封装: DO-204AH, DO-35, Axial

GBPC1510W T0G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 15A,

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1000V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A
• Current - Reverse Leakage @ Vr: 5µA @ 1000V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-Square, GBPC-W
• Supplier Device Package: GBPC-W

封装: 4-Square, GBPC-W

DBLS204GHRDG

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 2A,

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 400V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A
• Current - Reverse Leakage @ Vr: 2µA @ 400V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Gull Wing
• Supplier Device Package: DBLS

封装: 4-SMD, Gull Wing

DBLS154GHRDG

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 1.5A

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 400V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
• Current - Reverse Leakage @ Vr: 2µA @ 400V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Gull Wing
• Supplier Device Package: DBLS

封装: 4-SMD, Gull Wing

BAT54BR-RF

Taiwan Semiconductor Corporation

SOT-363, 30V, 0.2A, SCHOTTKY DIO

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 5 ns
• Current - Reverse Leakage @ Vr: 2 µA @ 25 V
• Capacitance @ Vr, F: 10pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363
• Operating Temperature - Junction: -65°C ~ 150°C

封装: -

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TS78L05CX

Taiwan Semiconductor Corporation

3-TERMINAL 100MA FIXED 5V VOLTAG

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 35V
• Voltage - Output (Min/Fixed): 5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.7V @ 100mA
• Current - Output: 100mA
• Current - Quiescent (Iq): 6 mA
• Current - Supply (Max): -
• PSRR: 49dB (120Hz)
• Control Features: Current Limit
• Protection Features: Over Current, Over Temperature
• Operating Temperature: 0°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

封装: -

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SS210FSH

Taiwan Semiconductor Corporation

2A, 100V, SCHOTTKY RECTIFIER

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 µA @ 100 V
• Capacitance @ Vr, F: 61pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: SOD-128
• Operating Temperature - Junction: -55°C ~ 150°C

封装: -

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TSM130NB06CR-RLG

Taiwan Semiconductor Corporation

MOSFET N-CH 60V 10A/51A 8PDFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 51A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.1W (Ta), 83W (Tc)
• Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-PDFN (5.2x5.75)
• Package / Case: 8-PowerLDFN

封装: -

2M180Z

Taiwan Semiconductor Corporation

DIODE ZENER 180V 2W DO204AC

• Voltage - Zener (Nom) (Vz): 180 V
• Tolerance: ±5%
• Power - Max: 2 W
• Impedance (Max) (Zzt): 725 Ohms
• Current - Reverse Leakage @ Vr: 500 nA @ 136.8 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)

封装: -

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S2DH

Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 2A DO214AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.5 µs
• Current - Reverse Leakage @ Vr: 1 µA @ 200 V
• Capacitance @ Vr, F: 30pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -55°C ~ 150°C

封装: -

1PGSMB5936

Taiwan Semiconductor Corporation

DIODE ZENER 30V 3W DO214AA

• Voltage - Zener (Nom) (Vz): 30 V
• Tolerance: ±5%
• Power - Max: 3 W
• Impedance (Max) (Zzt): 26 Ohms
• Current - Reverse Leakage @ Vr: 1 µA @ 22.8 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)

封装: -

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SS36LH

Taiwan Semiconductor Corporation

3A, 60V, SCHOTTKY RECTIFIER

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 60 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: Sub SMA
• Operating Temperature - Junction: -55°C ~ 150°C

封装: -

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SK83C-V7G

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 30V 8A DO214AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 30 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 125°C

封装: -

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BZS55C2V4

Taiwan Semiconductor Corporation

1206 (CERAMICS), 500MW, 5%, SMAL

• Voltage - Zener (Nom) (Vz): 2.4 V
• Tolerance: ±5%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): 85 Ohms
• Current - Reverse Leakage @ Vr: 50 µA @ 1 V
• Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206

封装: -

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1PGSMC5363-V7G

Taiwan Semiconductor Corporation

DIODE ZENER 5W DO214AB

• Voltage - Zener (Nom) (Vz): 30 V
• Tolerance: ±5%
• Power - Max: 5 W
• Impedance (Max) (Zzt): 8 Ohms
• Current - Reverse Leakage @ Vr: 500 nA @ 22.8 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)

封装: -

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TUAS8DH

Taiwan Semiconductor Corporation

8A, 200V, STANDARD RECOVERY RECT

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5 µA @ 200 V
• Capacitance @ Vr, F: 62pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: SMPC4.6U
• Operating Temperature - Junction: -55°C ~ 150°C

封装: -

FRAF8JGH

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 8A ITO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 200 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 600 V
• Capacitance @ Vr, F: 54pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack
• Supplier Device Package: ITO-220AC
• Operating Temperature - Junction: -55°C ~ 150°C

封装: -

SF46G

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 4A DO201AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 400 V
• Capacitance @ Vr, F: 80pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -55°C ~ 150°C

封装: -

ES2FH

Taiwan Semiconductor Corporation

DIODE GEN PURP 300V 2A DO214AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 300 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 300 V
• Capacitance @ Vr, F: 20pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -55°C ~ 150°C

封装: -

BZT52B11S-R9G

Taiwan Semiconductor Corporation

SOD-323F, 200MW, 2%, SMALL SIGNA

• Voltage - Zener (Nom) (Vz): 11 V
• Tolerance: ±2%
• Power - Max: 200 mW
• Impedance (Max) (Zzt): 20 Ohms
• Current - Reverse Leakage @ Vr: 90 nA @ 8 V
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323F

封装: -

TS4148-RAG

Taiwan Semiconductor Corporation

1206 (CERAMICS), 75V, 0.15A, SWI

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 75 V
• Current - Average Rectified (Io): 150mA
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 75 V
• Capacitance @ Vr, F: 4pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Operating Temperature - Junction: -55°C ~ 150°C

封装: -

PUUP4D

Taiwan Semiconductor Corporation

25NS, 4A, 200V, ULTRA FAST RECOV

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25 ns
• Current - Reverse Leakage @ Vr: 2 µA @ 200 V
• Capacitance @ Vr, F: 71pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: SMPC4.6U
• Operating Temperature - Junction: -55°C ~ 175°C

封装: -

BZD17C12P

Taiwan Semiconductor Corporation

SUB SMA, 800MW, 6%, ZENER DIODE

• Voltage - Zener (Nom) (Vz): 12 V
• Tolerance: ±5.39%
• Power - Max: 800 mW
• Impedance (Max) (Zzt): 7 Ohms
• Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: Sub SMA

封装: -

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TS2509CS

Taiwan Semiconductor Corporation

PWM BUCK CONTROLLER 3A 500KHZ

• Output Type: Transistor Driver
• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Number of Outputs: 1
• Output Phases: 1
• Voltage - Supply (Vcc/Vdd): 3.6V ~ 23V
• Frequency - Switching: 500kHz
• Duty Cycle (Max): 100%
• Synchronous Rectifier: No
• Clock Sync: No
• Serial Interfaces: -
• Control Features: Current Limit, Enable, Soft Start
• Operating Temperature: -20°C ~ 125°C
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

封装: -

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HER605G

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 6A R-6

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 400 V
• Capacitance @ Vr, F: 80pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: R-6, Axial
• Supplier Device Package: R-6
• Operating Temperature - Junction: -55°C ~ 150°C

封装: -

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SK39AH

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 90V 3A DO214AC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 90 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 90 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 150°C

封装: -

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SR1202H

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 20V 12A DO201AD

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20 V
• Current - Average Rectified (Io): 12A
• Voltage - Forward (Vf) (Max) @ If: 550 mV @ 12 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 20 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -55°C ~ 200°C

封装: -

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