页 35 - Taiwan Semiconductor Corporation 产品

零件编号	制造商	描述	封装	库存
BZD27C16PHRUG	Taiwan Semiconductor Corporation	DIODE, ZENER, 16V, 1000MW, %, AE Voltage - Zener (Nom) (Vz): 16.2V Tolerance: ±5.55% Power - Max: 1W Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 1µA @ 12V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	封装: DO-219AB	库存7,200
BZD27C56PHR3G	Taiwan Semiconductor Corporation	DIODE, ZENER, 56V, 1000MW, %, AE Voltage - Zener (Nom) (Vz): 56V Tolerance: ±7.14% Power - Max: 1W Impedance (Max) (Zzt): 60 Ohms Current - Reverse Leakage @ Vr: 1µA @ 43V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	封装: DO-219AB	库存5,696
1SMB5949 R5G	Taiwan Semiconductor Corporation	DIODE, ZENER, 100V, 3000MW, 5%, Voltage - Zener (Nom) (Vz): 100V Tolerance: ±5% Power - Max: 3W Impedance (Max) (Zzt): 250 Ohms Current - Reverse Leakage @ Vr: 1µA @ 76V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB)	封装: DO-214AA, SMB	库存2,336
2M6.8Z A0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 6.8V, 2000MW, %, D Voltage - Zener (Nom) (Vz): 6.8V Tolerance: ±5% Power - Max: 2W Impedance (Max) (Zzt): 1.5 Ohms Current - Reverse Leakage @ Vr: 1mA @ 5.5V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15)	封装: DO-204AC, DO-15, Axial	库存5,088
BZD27C16PW RVG	Taiwan Semiconductor Corporation	DIODE, ZENER, 16V, 1000MW, %, SO Voltage - Zener (Nom) (Vz): 16V Tolerance: ±5% Power - Max: 1W Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 1µA @ 12V Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD123W	封装: SOD-123W	库存7,312
BZD27C15P RFG	Taiwan Semiconductor Corporation	DIODE, ZENER, 15V, 1000MW, %, SU Voltage - Zener (Nom) (Vz): 14.7V Tolerance: ±6.12% Power - Max: 1W Impedance (Max) (Zzt): 10 Ohms Current - Reverse Leakage @ Vr: 1µA @ 11V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	封装: DO-219AB	库存4,816
BZD27C24P MTG	Taiwan Semiconductor Corporation	DIODE, ZENER, 24V, 1000MW, %, SU Voltage - Zener (Nom) (Vz): 24.2V Tolerance: ±5.78% Power - Max: 1W Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 1µA @ 18V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	封装: DO-219AB	库存7,344
BZD27C51PHMQG	Taiwan Semiconductor Corporation	DIODE, ZENER, 51V, 1000MW, %, AE Voltage - Zener (Nom) (Vz): 51V Tolerance: ±5.88% Power - Max: 1W Impedance (Max) (Zzt): 60 Ohms Current - Reverse Leakage @ Vr: 1µA @ 39V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	封装: DO-219AB	库存3,408
MMSZ5260B RHG	Taiwan Semiconductor Corporation	DIODE, ZENER, 43V, 500MW, 5%, SO Voltage - Zener (Nom) (Vz): 43V Tolerance: ±5% Power - Max: 500mW Impedance (Max) (Zzt): 93 Ohms Current - Reverse Leakage @ Vr: 100nA @ 33V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F	封装: SOD-123F	库存6,544
1N5222B A0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 2.5V, 500MW, 5%, D Voltage - Zener (Nom) (Vz): 2.5V Tolerance: ±5% Power - Max: 500mW Impedance (Max) (Zzt): 30 Ohms Current - Reverse Leakage @ Vr: 100µA @ 1V Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA Operating Temperature: 100°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35	封装: DO-204AH, DO-35, Axial	库存3,344
TS50P06G D2G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 50A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A Current - Reverse Leakage @ Vr: 10µA @ 800V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P	封装: 4-SIP, TS-6P	库存5,984
TS25P05GHC2G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 25A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A Current - Reverse Leakage @ Vr: 10µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P	封装: 4-SIP, TS-6P	库存2,736
BZD17C220P	Taiwan Semiconductor Corporation	SUB SMA, 800MW, 6%, ZENER DIODE Voltage - Zener (Nom) (Vz): 220 V Tolerance: ±5.67% Power - Max: 800 mW Impedance (Max) (Zzt): 900 Ohms Current - Reverse Leakage @ Vr: 1 µA @ 160 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: Sub SMA	封装: -	Request a Quote
TSSD20L45SW	Taiwan Semiconductor Corporation	20A, 45V, TRENCH SCHOTTKY Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 650 mV @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 45 V Capacitance @ Vr, F: 2600pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 (DPAK) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote
MBRF15150CTH	Taiwan Semiconductor Corporation	DIODE ARR SCHOTT 150V ITO220AB Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io) (per Diode): 15A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 150 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: ITO-220AB	封装: -	Request a Quote
KBP107G-C2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 1KV 1A KBP Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBP Supplier Device Package: KBP	封装: -	Request a Quote
BZX79B18	Taiwan Semiconductor Corporation	DO-35, 500MW, 2%, SMALL SIGNAL Z Voltage - Zener (Nom) (Vz): 18 V Tolerance: ±2% Power - Max: 500 mW Impedance (Max) (Zzt): 45 Ohms Current - Reverse Leakage @ Vr: 0.05 µA @ 12.6 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35	封装: -	Request a Quote
SK15H45	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 45V 15A R-6 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150 µA @ 45 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: R-6, Axial Supplier Device Package: R-6 Operating Temperature - Junction: 200°C (Max)	封装: -	Request a Quote
TS40P05G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 600V 40A TS-6P Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 40 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P	封装: -	库存3,585
1N4148WS-G	Taiwan Semiconductor Corporation	SOD-323, 100V, 0.15A, SWITCHING Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75 V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 1 µA @ 75 V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: 150°C	封装: -	Request a Quote
1SMA160ZH	Taiwan Semiconductor Corporation	DIODE ZENER 160V 1.25W DO214AC Voltage - Zener (Nom) (Vz): 160 V Tolerance: ±5% Power - Max: 1.25 W Impedance (Max) (Zzt): 1100 Ohms Current - Reverse Leakage @ Vr: 1 µA @ 121.6 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA)	封装: -	Request a Quote
HER3003PT	Taiwan Semiconductor Corporation	DIODE ARRAY GP 200V 30A TO247AD Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io) (per Diode): 30A (DC) Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 10 µA @ 200 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (TO-3P)	封装: -	Request a Quote
TSM70NB1R4CP	Taiwan Semiconductor Corporation	700V, 3A, SINGLE N-CHANNEL POWER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 317 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 28W (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	封装: -	Request a Quote
S1M-KR2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 1 µA @ 1000 V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote
S1MF-T	Taiwan Semiconductor Corporation	1A, 1000V, STANDARD RECOVERY REC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: 7pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: SMAF Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存22,020
BZT55B16	Taiwan Semiconductor Corporation	MMELF, 500MW, 2%, SMALL SIGNAL Z Voltage - Zener (Nom) (Vz): 16 V Tolerance: ±2% Power - Max: 500 mW Impedance (Max) (Zzt): 40 Ohms Current - Reverse Leakage @ Vr: 100 nA @ 12 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-80 Variant Supplier Device Package: QMMELF	封装: -	Request a Quote
BZT55B10	Taiwan Semiconductor Corporation	MMELF, 500MW, 2%, SMALL SIGNAL Z Voltage - Zener (Nom) (Vz): 10 V Tolerance: ±2% Power - Max: 500 mW Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-80 Variant Supplier Device Package: QMMELF	封装: -	Request a Quote
UF1DLW	Taiwan Semiconductor Corporation	20NS, 1A, 200V, ULTRA FAST RECOV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存60,000
KBP104G-C2	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 400V 1A KBP Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBP Supplier Device Package: KBP	封装: -	Request a Quote
TSM035NB04LCZ-C0G	Taiwan Semiconductor Corporation	40V, 157A, SINGLE N-CHANNEL POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 157A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6350 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	封装: -	库存11,964