Taiwan Semiconductor Corporation 产品

1SMB5942HR5G

Taiwan Semiconductor Corporation

DIODE, ZENER, 51V, 3000MW, 5%, A

• Voltage - Zener (Nom) (Vz): 51V
• Tolerance: ±5%
• Power - Max: 3W
• Impedance (Max) (Zzt): 70 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 38.8V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)

封装: DO-214AA, SMB

BZD27C82PHMHG

Taiwan Semiconductor Corporation

DIODE, ZENER, 82V, 1000MW, %, AE

• Voltage - Zener (Nom) (Vz): 82V
• Tolerance: ±6.09%
• Power - Max: 1W
• Impedance (Max) (Zzt): 200 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 62V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

封装: DO-219AB

1N4742AHA0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 12V, 1000MW, 5%, A

• Voltage - Zener (Nom) (Vz): 12V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 40 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 22.8V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封装: DO-204AL, DO-41, Axial

1N4759AHR1G

Taiwan Semiconductor Corporation

DIODE, ZENER, 62V, 1000MW, 5%, A

• Voltage - Zener (Nom) (Vz): 62V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 125 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 47.1V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封装: DO-204AL, DO-41, Axial

BZD17C15P MHG

Taiwan Semiconductor Corporation

DIODE, ZENER, 15V, 800MW, %, SUB

• Voltage - Zener (Nom) (Vz): 15V
• Tolerance: ±6%
• Power - Max: 800mW
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 11V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

封装: DO-219AB

1M150ZHA0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 150V, 1000MW, 5%,

• Voltage - Zener (Nom) (Vz): 150V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 1000 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 114V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封装: DO-204AL, DO-41, Axial

BZX85C3V3 A0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 3.3V, 1300MW, 5%,

• Voltage - Zener (Nom) (Vz): 3.3V
• Tolerance: ±5%
• Power - Max: 1.3W
• Impedance (Max) (Zzt): 20 Ohms
• Current - Reverse Leakage @ Vr: 40µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10mA
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封装: DO-204AL, DO-41, Axial

BZT55C8V2 L1G

Taiwan Semiconductor Corporation

DIODE, ZENER, 8.2V, 500MW, 5%, Q

• Voltage - Zener (Nom) (Vz): 8.2V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 7 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 6.2V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-80 Variant
• Supplier Device Package: Mini MELF

封装: SOD-80 Variant

BZX79B15 A0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 15V, 500MW, 2%, DO

• Voltage - Zener (Nom) (Vz): 15V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 30 Ohms
• Current - Reverse Leakage @ Vr: 10.5mA @ 50mV
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

封装: DO-204AH, DO-35, Axial

BZD27C33P RVG

Taiwan Semiconductor Corporation

DIODE, ZENER, 33V, 1000MW, %, SU

• Voltage - Zener (Nom) (Vz): 33V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 24V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

封装: DO-219AB

GBPC40005M T0G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 40A,

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 50V
• Current - Average Rectified (Io): 40A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A
• Current - Reverse Leakage @ Vr: 10µA @ 50V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: QC Terminal
• Package / Case: 4-Square, GBPC40-M
• Supplier Device Package: GBPC40-M

封装: 4-Square, GBPC40-M

DBLS101G C1G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 1A,

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 50V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Current - Reverse Leakage @ Vr: 2µA @ 50V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Gull Wing
• Supplier Device Package: DBLS

封装: 4-SMD, Gull Wing

SBS36 RGG

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, SCHOTTKY BRIDG

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 60V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
• Current - Reverse Leakage @ Vr: 500µA @ 60V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Gull Wing
• Supplier Device Package: ABS

封装: 4-SMD, Gull Wing

MBS2

Taiwan Semiconductor Corporation

BRIDGE RECT 1P 200V 500MA MBS

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 200 V
• Current - Average Rectified (Io): 500 mA
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
• Current - Reverse Leakage @ Vr: 5 µA @ 200 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-BESOP (0.173", 4.40mm Width)
• Supplier Device Package: MBS

封装: -

S5D-V7G

Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 5A DO214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.5 µs
• Current - Reverse Leakage @ Vr: 10 µA @ 200 V
• Capacitance @ Vr, F: 60pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

封装: -

BZT52C10-G

Taiwan Semiconductor Corporation

SOD-123, 350MW, 5%, SMALL SIGNAL

• Voltage - Zener (Nom) (Vz): 10 V
• Tolerance: ±5%
• Power - Max: 350 mW
• Impedance (Max) (Zzt): 20 Ohms
• Current - Reverse Leakage @ Vr: 200 nA @ 7 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

封装: -

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GBU15L06H

Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 600V 15A GBU

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 600 V
• Current - Average Rectified (Io): 15 A
• Voltage - Forward (Vf) (Max) @ If: 960 mV @ 7.5 A
• Current - Reverse Leakage @ Vr: 5 µA @ 600 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBU
• Supplier Device Package: GBU

封装: -

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HS1JFS

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1A SOD128

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75 ns
• Current - Reverse Leakage @ Vr: 1 µA @ 600 V
• Capacitance @ Vr, F: 13pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: SOD-128
• Operating Temperature - Junction: -55°C ~ 150°C

封装: -

BZT52C3V0K

Taiwan Semiconductor Corporation

SOD-523F, 200MW, 5%, SMALL SIGNA

• Voltage - Zener (Nom) (Vz): 3 V
• Tolerance: ±5%
• Power - Max: 200 mW
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 50 µA @ 1 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: SOD-523F

封装: -

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BZT52C9V1S

Taiwan Semiconductor Corporation

SOD-323F, 200MW, 5%, SMALL SIGNA

• Voltage - Zener (Nom) (Vz): 9.1 V
• Tolerance: ±5%
• Power - Max: 200 mW
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 450 nA @ 6 V
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323F

封装: -

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1PGSMC5354-V7G

Taiwan Semiconductor Corporation

DIODE ZENER 5W DO214AB

• Voltage - Zener (Nom) (Vz): 17 V
• Tolerance: ±5%
• Power - Max: 5 W
• Impedance (Max) (Zzt): 3 Ohms
• Current - Reverse Leakage @ Vr: 500 nA @ 12.9 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)

封装: -

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BZT52C6V8

Taiwan Semiconductor Corporation

SOD-123F, 500MW, 5%, SMALL SIGNA

• Voltage - Zener (Nom) (Vz): 6.8 V
• Tolerance: ±5%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 1.8 µA @ 4 V
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123F

封装: -

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BZT52C3V6

Taiwan Semiconductor Corporation

SOD-123F, 500MW, 5%, SMALL SIGNA

• Voltage - Zener (Nom) (Vz): 3.6 V
• Tolerance: ±5%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): 90 Ohms
• Current - Reverse Leakage @ Vr: 4.5 µA @ 1 V
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123F

封装: -

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BZT52B22S-R9G

Taiwan Semiconductor Corporation

SOD-323F, 200MW, 2%, SMALL SIGNA

• Voltage - Zener (Nom) (Vz): 22 V
• Tolerance: ±2%
• Power - Max: 200 mW
• Impedance (Max) (Zzt): 55 Ohms
• Current - Reverse Leakage @ Vr: 45 nA @ 15.4 V
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323F

封装: -

TSM22P10CZ-C0G

Taiwan Semiconductor Corporation

MOSFET P-CH 100V 22A TO220

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 30 V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 125W (Tc)
• Rds On (Max) @ Id, Vgs: 140mOhm @ 20A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

封装: -

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RS1JF-T

Taiwan Semiconductor Corporation

250NS, 1A, 600V, FAST RECOVERY R

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 250 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 600 V
• Capacitance @ Vr, F: 9pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-221AC, SMA Flat Leads
• Supplier Device Package: SMAF
• Operating Temperature - Junction: -55°C ~ 150°C

封装: -

MTZJ2V0SB

Taiwan Semiconductor Corporation

DO-34, 500MW, 2%, SMALL SIGNAL Z

• Voltage - Zener (Nom) (Vz): 2.11 V
• Tolerance: ±2%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 120 µA @ 500 mV
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AG, DO-34, Axial
• Supplier Device Package: DO-34

封装: -

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MBRS4060CT

Taiwan Semiconductor Corporation

DIODE ARR SCHOTT 60V 40A TO263AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60 V
• Current - Average Rectified (Io) (per Diode): 40A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 60 V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB (D2PAK)

封装: -

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1SMB5926

Taiwan Semiconductor Corporation

DIODE ZENER 11V 3W DO214AA

• Voltage - Zener (Nom) (Vz): 11 V
• Tolerance: ±5%
• Power - Max: 3 W
• Impedance (Max) (Zzt): 5.5 Ohms
• Current - Reverse Leakage @ Vr: 1 µA @ 8.4 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)

封装: -

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SR802H

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 20V 8A DO201AD

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20 V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 20 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -55°C ~ 125°C

封装: -

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