Taiwan Semiconductor Corporation 产品

BZD27C18PWHRVG

Taiwan Semiconductor Corporation

DIODE, ZENER, 18V, 1000MW, %, AE

• Voltage - Zener (Nom) (Vz): 18V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 13V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123W
• Supplier Device Package: SOD123W

封装: SOD-123W

BZD27C75PHMHG

Taiwan Semiconductor Corporation

DIODE, ZENER, 75V, 1000MW, %, AE

• Voltage - Zener (Nom) (Vz): 74.5V
• Tolerance: ±6.04%
• Power - Max: 1W
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 56V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

封装: DO-219AB

BZD27C43P RQG

Taiwan Semiconductor Corporation

DIODE, ZENER, 43V, 1000MW, %, SU

• Voltage - Zener (Nom) (Vz): 43V
• Tolerance: ±6.97%
• Power - Max: 1W
• Impedance (Max) (Zzt): 45 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 33V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

封装: DO-219AB

BZD27C43P MQG

Taiwan Semiconductor Corporation

DIODE, ZENER, 43V, 1000MW, %, SU

• Voltage - Zener (Nom) (Vz): 43V
• Tolerance: ±6.97%
• Power - Max: 1W
• Impedance (Max) (Zzt): 45 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 33V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

封装: DO-219AB

1N4747A R1G

Taiwan Semiconductor Corporation

DIODE, ZENER, 20V, 1000MW, 5%, D

• Voltage - Zener (Nom) (Vz): 20V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 70 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 15.2V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封装: DO-204AL, DO-41, Axial

BZT52C5V1 RHG

Taiwan Semiconductor Corporation

DIODE, ZENER, 5.1V, 500MW, 5%, S

• Voltage - Zener (Nom) (Vz): 5.1V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 60 Ohms
• Current - Reverse Leakage @ Vr: 1.8µA @ 2V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123F

封装: SOD-123F

MMSZ5230B RHG

Taiwan Semiconductor Corporation

DIODE, ZENER, 4.7V, 500MW, 5%, S

• Voltage - Zener (Nom) (Vz): 4.7V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 19 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 2V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123F

封装: SOD-123F

BZT55B3V3 L1G

Taiwan Semiconductor Corporation

DIODE, ZENER, 3.3V, 500MW, 2%, Q

• Voltage - Zener (Nom) (Vz): 3.3V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 85 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-80 Variant
• Supplier Device Package: Mini MELF

封装: SOD-80 Variant

BZV55C47 L1G

Taiwan Semiconductor Corporation

DIODE, ZENER, 47V, 500MW, 5%, MM

• Voltage - Zener (Nom) (Vz): 47V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 110 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 35V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: Mini MELF

封装: DO-213AC, MINI-MELF, SOD-80

GBPC40005 T0G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 40A,

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 50V
• Current - Average Rectified (Io): 40A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A
• Current - Reverse Leakage @ Vr: 10µA @ 50V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: QC Terminal
• Package / Case: 4-Square, GBPC40
• Supplier Device Package: GBPC40

封装: 4-Square, GBPC40

EABS1GHREG

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, SUPER FAST, 1A

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 400V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Current - Reverse Leakage @ Vr: 1µA @ 400V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Gull Wing
• Supplier Device Package: ABS

封装: 4-SMD, Gull Wing

EABS1DHREG

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, SUPER FAST, 1A

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 200V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 950mV @ 1.5A
• Current - Reverse Leakage @ Vr: 1µA @ 200V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Gull Wing
• Supplier Device Package: ABS

封装: 4-SMD, Gull Wing

1M110ZH

Taiwan Semiconductor Corporation

DIODE ZENER 110V 1W DO204AL

• Voltage - Zener (Nom) (Vz): 110 V
• Tolerance: ±5%
• Power - Max: 1 W
• Impedance (Max) (Zzt): 450 Ohms
• Current - Reverse Leakage @ Vr: 5 µA @ 83.6 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封装: -

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UGS20JH

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 20A TO263AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 20A
• Voltage - Forward (Vf) (Max) @ If: 2 V @ 20 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 1 µA @ 600 V
• Capacitance @ Vr, F: 94.5pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB (D2PAK)
• Operating Temperature - Junction: -55°C ~ 150°C

封装: -

MBRF30L45CT

Taiwan Semiconductor Corporation

DIODE ARR SCHOT 45V 30A ITO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45 V
• Current - Average Rectified (Io) (per Diode): 30A
• Voltage - Forward (Vf) (Max) @ If: 740 mV @ 30 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 400 µA @ 45 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Isolated Tab
• Supplier Device Package: ITO-220AB

封装: -

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S2QH

Taiwan Semiconductor Corporation

2A, 1200V, STANDARD RECOVERY REC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.5 µs
• Current - Reverse Leakage @ Vr: 1 µA @ 1200 V
• Capacitance @ Vr, F: 30pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -55°C ~ 150°C

封装: -

BZT52B3V6-G

Taiwan Semiconductor Corporation

SOD-123, 410MW, 2%, SMALL SIGNAL

• Voltage - Zener (Nom) (Vz): 3.6 V
• Tolerance: ±2%
• Power - Max: 410 mW
• Impedance (Max) (Zzt): 90 Ohms
• Current - Reverse Leakage @ Vr: 5 µA @ 1 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

封装: -

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BZT52B2V7S-R9G

Taiwan Semiconductor Corporation

SOD-323F, 200MW, 2%, SMALL SIGNA

• Voltage - Zener (Nom) (Vz): 2.7 V
• Tolerance: ±2%
• Power - Max: 200 mW
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 18 µA @ 1 V
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323F

封装: -

SS33-V7G

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 30V 3A DO214AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 30 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 125°C

封装: -

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TSSW3U60

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 60V 3A SOD123W

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1 mA @ 60 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-123W
• Supplier Device Package: SOD-123W
• Operating Temperature - Junction: -55°C ~ 150°C

封装: -

DBL107G

Taiwan Semiconductor Corporation

DIODE BRIDGE 1A 1000V DBL

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1 kV
• Current - Average Rectified (Io): 1 A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
• Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.300", 7.62mm)
• Supplier Device Package: DBL

封装: -

SS36-R7

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 60V 3A DO214AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 60 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

封装: -

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SBS26

Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 60V 2A ABS

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 60 V
• Current - Average Rectified (Io): 2 A
• Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
• Current - Reverse Leakage @ Vr: 50 µA @ 60 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Gull Wing
• Supplier Device Package: ABS

封装: -

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TSM300NB06CR-RLG

Taiwan Semiconductor Corporation

MOSFET N-CH 60V 6A/27A 8PDFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 27A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.1W (Ta), 56W (Tc)
• Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-PDFN (5.2x5.75)
• Package / Case: 8-PowerLDFN

封装: -

1PGSMA4747

Taiwan Semiconductor Corporation

DIODE ZENER 20V 1.25W DO214AC

• Voltage - Zener (Nom) (Vz): 20 V
• Tolerance: ±5%
• Power - Max: 1.25 W
• Impedance (Max) (Zzt): 22 Ohms
• Current - Reverse Leakage @ Vr: 1 µA @ 15.2 V
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

封装: -

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HER601G

Taiwan Semiconductor Corporation

DIODE GEN PURP 50V 6A R-6

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50 V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 50 V
• Capacitance @ Vr, F: 80pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: R-6, Axial
• Supplier Device Package: R-6
• Operating Temperature - Junction: -55°C ~ 150°C

封装: -

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1SMA4742H

Taiwan Semiconductor Corporation

DIODE ZENER 12V 1.25W DO214AC

• Voltage - Zener (Nom) (Vz): 12 V
• Tolerance: ±5%
• Power - Max: 1.25 W
• Impedance (Max) (Zzt): 9 Ohms
• Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

封装: -

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UG54GSH

Taiwan Semiconductor Corporation

20NS, 5A, 200V, ULTRA FAST RECOV

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 20 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 200 V
• Capacitance @ Vr, F: 45pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)
• Operating Temperature - Junction: -55°C ~ 175°C

封装: -

BC849BW

Taiwan Semiconductor Corporation

SOT-323, 30V, 0.1A, NPN BIPOLAR

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 30 V
• Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 200 mW
• Frequency - Transition: 100MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

封装: -

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MUR310SB

Taiwan Semiconductor Corporation

25NS, 3A, 100V, ULTRA FAST RECOV

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 200 V
• Capacitance @ Vr, F: 45pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -55°C ~ 175°C

封装: -