Taiwan Semiconductor Corporation 产品

2M6.8Z B0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 6.8V, 2000MW, %, D

• Voltage - Zener (Nom) (Vz): 6.8V
• Tolerance: ±5%
• Power - Max: 2W
• Impedance (Max) (Zzt): 1.5 Ohms
• Current - Reverse Leakage @ Vr: 1mA @ 5.5V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)

封装: DO-204AC, DO-15, Axial

BZD27C12PWHRVG

Taiwan Semiconductor Corporation

DIODE, ZENER, 12V, 1000MW, %, AE

• Voltage - Zener (Nom) (Vz): 12V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 7 Ohms
• Current - Reverse Leakage @ Vr: 3µA @ 9.1V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123W
• Supplier Device Package: SOD123W

封装: SOD-123W

BZD27C15PHRFG

Taiwan Semiconductor Corporation

DIODE, ZENER, 15V, 1000MW, %, AE

• Voltage - Zener (Nom) (Vz): 14.7V
• Tolerance: ±6.12%
• Power - Max: 1W
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 11V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

封装: DO-219AB

1SMB5948HR5G

Taiwan Semiconductor Corporation

DIODE, ZENER, 91V, 3000MW, 5%, A

• Voltage - Zener (Nom) (Vz): 91V
• Tolerance: ±5%
• Power - Max: 3W
• Impedance (Max) (Zzt): 200 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 69.2V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)

封装: DO-214AA, SMB

1SMB5948HM4G

Taiwan Semiconductor Corporation

DIODE, ZENER, 91V, 3000MW, 5%, A

• Voltage - Zener (Nom) (Vz): 91V
• Tolerance: ±5%
• Power - Max: 3W
• Impedance (Max) (Zzt): 200 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 69.2V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)

封装: DO-214AA, SMB

1M130Z B0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 130V, 1000MW, 5%,

• Voltage - Zener (Nom) (Vz): 130V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 700 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 98.8V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封装: DO-204AL, DO-41, Axial

BZD17C51P RTG

Taiwan Semiconductor Corporation

DIODE, ZENER, 51V, 800MW, %, SUB

• Voltage - Zener (Nom) (Vz): 51V
• Tolerance: ±5.88%
• Power - Max: 800mW
• Impedance (Max) (Zzt): 60 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 39V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

封装: DO-219AB

MTZJ10SD R0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 10.21V, 500MW, %,

• Voltage - Zener (Nom) (Vz): 10.21V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 30 Ohms
• Current - Reverse Leakage @ Vr: 200nA @ 7V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AG, DO-34, Axial
• Supplier Device Package: DO-34

封装: DO-204AG, DO-34, Axial

GBPC5006M T0G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 50A,

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 600V
• Current - Average Rectified (Io): 50A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: QC Terminal
• Package / Case: 4-Square, GBPC40-M
• Supplier Device Package: GBPC40-M

封装: 4-Square, GBPC40-M

GBPC2508 T0G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 25A,

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 800V
• Current - Average Rectified (Io): 25A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
• Current - Reverse Leakage @ Vr: 5µA @ 800V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: QC Terminal
• Package / Case: 4-Square, GBPC
• Supplier Device Package: GBPC

封装: 4-Square, GBPC

TS432BCT A3G

Taiwan Semiconductor Corporation

VOLTAGE REFERENCE, PROGRAMMABLE,

• Reference Type: -
• Output Type: -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Current - Output: -
• Tolerance: -
• Temperature Coefficient: -
• Noise - 0.1Hz to 10Hz: -
• Noise - 10Hz to 10kHz: -
• Voltage - Input: -
• Current - Supply: -
• Current - Cathode: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

BZV55B33

Taiwan Semiconductor Corporation

MMELF, 500MW, 2%, SMALL SIGNAL Z

• Voltage - Zener (Nom) (Vz): 33 V
• Tolerance: ±2%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 24 V
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: Mini MELF

封装: -

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SK55C-V6G

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 50V 5A DO214AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 50 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 50 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

封装: -

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RS2KALH

Taiwan Semiconductor Corporation

500NS, 2A, 800V, FAST RECOVERY R

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 500 ns
• Current - Reverse Leakage @ Vr: 1 µA @ 800 V
• Capacitance @ Vr, F: 10pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-221AC, SMA Flat Leads
• Supplier Device Package: Thin SMA
• Operating Temperature - Junction: -55°C ~ 150°C

封装: -

S1GMH

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 1A MICRO SMA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 780 ns
• Current - Reverse Leakage @ Vr: 1 µA @ 400 V
• Capacitance @ Vr, F: 5pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, Flat Lead
• Supplier Device Package: Micro SMA
• Operating Temperature - Junction: -55°C ~ 175°C

封装: -

1PGSMB5938

Taiwan Semiconductor Corporation

DIODE ZENER 36V 3W DO214AA

• Voltage - Zener (Nom) (Vz): 36 V
• Tolerance: ±5%
• Power - Max: 3 W
• Impedance (Max) (Zzt): 38 Ohms
• Current - Reverse Leakage @ Vr: 1 µA @ 27.4 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)

封装: -

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TSM180P03CS

Taiwan Semiconductor Corporation

-30V, -10A, SINGLE P-CHANNEL POW

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Tc)
• Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: -

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SS310LH

Taiwan Semiconductor Corporation

3A, 100V, SCHOTTKY RECTIFIER

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 100 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: Sub SMA
• Operating Temperature - Junction: -55°C ~ 150°C

封装: -

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PU4BB

Taiwan Semiconductor Corporation

25NS, 4A, 100V, ULTRA FAST RECOV

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25 ns
• Current - Reverse Leakage @ Vr: 2 µA @ 100 V
• Capacitance @ Vr, F: 78pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -55°C ~ 175°C

封装: -

PU4BC

Taiwan Semiconductor Corporation

25NS, 4A, 100V, ULTRA FAST RECOV

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25 ns
• Current - Reverse Leakage @ Vr: 2 µA @ 100 V
• Capacitance @ Vr, F: 78pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 175°C

封装: -

BZS55C5V6

Taiwan Semiconductor Corporation

1206 (CERAMICS), 500MW, 5%, SMAL

• Voltage - Zener (Nom) (Vz): 5.6 V
• Tolerance: ±5%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): 30 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 1 V
• Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206

封装: -

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HS3K-V7G

Taiwan Semiconductor Corporation

DIODE GEN PURP 800V 3A DO214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 800 V
• Capacitance @ Vr, F: 50pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

封装: -

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TSM680P06CP

Taiwan Semiconductor Corporation

-60V, -18A, SINGLE P-CHANNEL POW

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 20W (Tc)
• Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252 (DPAK)
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

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M3Z20VC

Taiwan Semiconductor Corporation

SOD-323F, 200MW, 5%, ZENER DIODE

• Voltage - Zener (Nom) (Vz): 20 V
• Tolerance: ±5%
• Power - Max: 200 mW
• Impedance (Max) (Zzt): 55 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 15 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323F

封装: -

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BAT42-L0-R0

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 30V 200MA DO35

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 5 ns
• Current - Reverse Leakage @ Vr: 500 nA @ 25 V
• Capacitance @ Vr, F: 7pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35
• Operating Temperature - Junction: -65°C ~ 125°C

封装: -

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SF66GH

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 6A DO201AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 400 V
• Capacitance @ Vr, F: 50pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -55°C ~ 150°C

封装: -

RS1JLW

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1A SOD123W

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-123W
• Supplier Device Package: SOD-123W
• Operating Temperature - Junction: -55°C ~ 175°C

封装: -

1PGSMA4754

Taiwan Semiconductor Corporation

DIODE ZENER 39V 1.25W DO214AC

• Voltage - Zener (Nom) (Vz): 39 V
• Tolerance: ±5%
• Power - Max: 1.25 W
• Impedance (Max) (Zzt): 60 Ohms
• Current - Reverse Leakage @ Vr: 1 µA @ 29.7 V
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

封装: -

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SR1060H

Taiwan Semiconductor Corporation

DIODE ARR SCHOTT 60V 10A TO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60 V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 60 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

封装: -

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TSF30U60C

Taiwan Semiconductor Corporation

DIODE ARR SCHOT 60V 15A ITO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60 V
• Current - Average Rectified (Io) (per Diode): 15A
• Voltage - Forward (Vf) (Max) @ If: 570 mV @ 15 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 60 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Isolated Tab
• Supplier Device Package: ITO-220AB

封装: -

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